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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".

Technical Program: Separated version One Page (Not Separated) version

Author Index: HERE

Session Schedule

Thursday, January 20, 2011


Opening Remarks 9:30 - 9:40
S1 High-k/Metal Gate (I) 9:40 - 10:50
Break 10:50 - 11:00
S2 High-k/Metal Gate (II) 11:00 - 12:00
Lunch 12:00 - 13:10
S3 Graphene 13:10 - 14:20
Break 14:20 - 14:30
S4 Process and Characterization (I) 14:30 - 15:30
Break 15:30 - 15:45
S5 Process and Characterization (II) 15:45 - 17:05
Short Review of Poster Papers 17:05 - 17:10
P Poster Session 17:10 - 19:40

Friday, January 21, 2011


S6 Oxide Physics 9:30 - 10:20
Break 10:20 - 10:30
S7 Ge and III-V MOSFETs 10:30 - 12:10
Lunch 12:10 - 13:10
K1 Keynote Speech (I) 13:10 - 14:00
S8 Low Frequency Noise 14:00 - 15:20
Break 15:20 - 15:35
S9 Memory 15:35 - 16:55
Break 16:55 - 17:05
K2 Keynote Speech (II) 17:05 - 17:55
Closing Remarks and Awarding Ceremony 17:55 - 18:10
Banquet (at "Royal Blue Hall", Tokyo Tech Front) 18:10 - 20:00