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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S2  High-k/Metal Gate (II)
Time: 11:00 - 12:00 Thursday, January 20, 2011
Chairs: Wenwu Wang (Chinese Academy of Sciences, China), Masaaki Niwa (Panasonic, Japan)

S2-1 (Time: 11:00 - 11:20)
TitleEffect of Y Content in Ta1-x Yx C Gate Electrodes on Vfb Control for Hf-based High-k
Author*Pattira Homhuan (Chulalongkorn Univ., Thailand), Toshihide Nabatame, Toyohiro Chikyow (NIMS, Japan), Sukkaneste Tungasmita (Chulalongkorn Univ., Thailand)
Pagepp. 9 - 10

S2-2 (Time: 11:20 - 11:40)
TitleRare Earth Oxide Capping Effect on La2O3 Gate Dielectrics toward EOT of 0.5nm
Author*Miyuki Kouda, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Pagepp. 11 - 12

S2-3 (Time: 11:40 - 12:00)
TitleInterface Layer Scavenging and Defect Generation in LaLuO3/Ge MIS Gate Stack
Author*Toshiyuki Tabata, Choong Hyun Lee, Koji Kita, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan)
Pagepp. 13 - 14