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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S7  Ge and III-V MOSFETs
Time: 10:30 - 12:10 Friday, January 21, 2011
Chairs: Yoshinari Kamakura (Osaka Univ., Japan), Noriyuki Miyata (AIST, Japan)

S7-1
Title(Invited Paper) Prospects of Si and SiGe Nanowire Structures and Devices for Next-Generation Green Electronics and Clean Energy (Withdrawn)
Author*Guo-Qiang Lo (Inst. of Microelectronics, Singapore)

S7-2 (Time: 10:30 - 10:50)
TitleJunctionless Ge p-MOSFETs Fabricated on Ultra-thin GeOI Substrate
Author*Dan Dan Zhao, Tomonori Nishimura, Choong Hyun Lee, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 141 - 142

S7-3 (Time: 10:50 - 11:10)
TitleDirect Comparison of Electron and Hole Mobility in a Single GeOI MOSFET with Ge/SiO2 Interface
Author*Choong Hyun Lee (Univ. of Tokyo/JST-CREST, Japan), Dan Dan Zhao (Univ. of Tokyo, Japan), Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan)
Pagepp. 143 - 144

S7-4 (Time: 11:10 - 11:30)
TitleImpact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(100) MOS Capacitors
Author*Akihiro Ohtake (NIMS, Japan), Noriyuki Miyata, Yuji Urabe, Tetsuji Yasuda (AIST, Japan)
Pagepp. 145 - 146

S7-5 (Time: 11:30 - 11:50)
TitleALD-Al2O3/InGaAs MOS Structures with Interfacial Control Layers Formed by Nitridation of InGaAs Surfaces
Author*Takuya Hoshii, Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama (Univ. of Tokyo, Japan), Hisashi Yamada, Masahiko Hata (Sumitomo Chemical Co. Ltd., Japan), Tetsuji Yasuda (AIST, Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Pagepp. 147 - 148

S7-6 (Time: 11:50 - 12:10)
TitleImpacts of (NH4)2S Treatment and ALD Temperature on ALD-Al2O3/InP Interface Properties
Author*Noriyuki Taoka, Masafumi Yokoyama, SangHyeon Kim, Rena Suzuki, Takuya Hoshii, Ryo Iida, Sunghoon Lee (Univ. of Tokyo, Japan), Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda (AIST, Japan), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical Co. Ltd., Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Pagepp. 149 - 150