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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S1  High-k/Metal Gate (I)
Time: 9:40 - 10:50 Thursday, January 20, 2011
Chairs: Masaaki Niwa (Panasonic, Japan), Wenwu Wang (Chinese Academy of Sciences, China)

S1-1 (Time: 9:40 - 10:10)
Title(Invited Paper) On the Origin of Mobility Reduction in Ultrathin EOT HK/MG CMOS Devices: Impact from Gate-Stack and Device Architecture
Author*Lars-Ake Ragnarsson, Jerome Mitard, Sug-Hun Hong, Shinji Takeoka, Joshua Tseng, Wei-E Wang, Shinpei Yamaguchi (IMEC, Belgium), Lionel Trojman (Universidad San Francisco de Quito-El Politecnico, Ecuador), Thomas Kauerauf, An De Keersgieter, Tom Schram, Erika Röhr, Nadine Collaert, Malgorzata Jurczak (IMEC, Belgium), Konstantin Bourdelle (Soitec, France), Bich-Yen Nguyen (Soitec-USA, U.S.A.), Philippe Absil, Thomas Yves Hoffmann (IMEC, Belgium)
Pagepp. 1 - 4

S1-2 (Time: 10:10 - 10:30)
TitleElectrical Properties of Epitaxial HfO2 Films on Si (100) and Si (111) Substrates Studied for Application in Silicon Nanowire MOSFETs
Author*Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Hiroyuki Ota (AIST, Japan)
Pagepp. 5 - 6

S1-3 (Time: 10:30 - 10:50)
TitleDemonstration of Very High-k HfO2 (k~50) by Suppressing Martensitic Transformation in Thin Dielectric Films
Author*Yasuhiro Nakajima, Koji Kita, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 7 - 8