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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S3  Graphene
Time: 13:10 - 14:20 Thursday, January 20, 2011
Chairs: Byoung Hun Lee (GIST, Republic of Korea), Hiroki Kondo (Nagoya Univ., Japan)

S3-1 (Time: 13:10 - 13:40)
Title(Invited Paper) Peculiar Electronic and Transport Properties of Graphene
Author*Tsuneya Ando (Tokyo Inst. of Tech., Japan)
Pagepp. 15 - 18

S3-2 (Time: 13:40 - 14:00)
TitleA Strong Interaction of Exfoliated Graphene with SiO2/Si Substrate
Author*Takaaki Yamashita, Kosuke Nagashio, Tomonori Nishimura, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 19 - 20

S3-3 (Time: 14:00 - 14:20)
TitleCharacteristics of Very Low Temperature ALD Al2O3 Gate Dielectric for Top Gate Graphene MOSFET Applications
Author*Young Gon Lee, Chang Goo Kang, Sang Kyung Lee (Gwangju Inst. of Science and Tech., Republic of Korea), Kyu-Jeong Choi (NCD Technology, Republic of Korea), Chun Hum Cho, Hyeon Jun Hwang, Seung Yong Lee, Sung Kwan Lim, Uk Jin Jung, Byoung Hun Lee (Gwangju Inst. of Science and Tech., Republic of Korea)
Pagepp. 21 - 22