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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S6  Oxide Physics
Time: 9:30 - 10:20 Friday, January 21, 2011
Chairs: Hiroyuki Kageshima (NTT, Japan), Seiichi Miyazaki (Nagoya Univ., Japan)

S6-1 (Time: 9:30 - 10:00)
Title(Special Talk) A Multiplet Theory Model for O-vacancy Defects in High-k Transition Metal Elemental and Complex Oxides
Author*Gerry Lucovsky, Leonardo Miotti, Karen Paz Bastos (NC State Univ., U.S.A.)
Pagepp. 137 - 138

S6-2 (Time: 10:00 - 10:20)
TitleElectric Dipole at High-k/SiO2 Interface and Physical Origin by Dielectric Contact Induced Gap States
Author*Xiaolei Wang, Kai Han, Wenwu Wang, Xueli Ma, Jinjuan Xiang, Dapeng Chen (Chinese Academy of Sciences, China), Jing Zhang (North China Univ. of Tech., China)
Pagepp. 139 - 140