International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".

Technical Program: One Page (Not Separated) version

Author Index: HERE

Session Schedule

Thursday, January 20, 2011


Opening Remarks 9:30 - 9:40
S1 High-k/Metal Gate (I) 9:40 - 10:50
Break 10:50 - 11:00
S2 High-k/Metal Gate (II) 11:00 - 12:00
Lunch 12:00 - 13:10
S3 Graphene 13:10 - 14:20
Break 14:20 - 14:30
S4 Process and Characterization (I) 14:30 - 15:30
Break 15:30 - 15:45
S5 Process and Characterization (II) 15:45 - 17:05
Short Review of Poster Papers 17:05 - 17:10
P Poster Session 17:10 - 19:40

Friday, January 21, 2011


S6 Oxide Physics 9:30 - 10:20
Break 10:20 - 10:30
S7 Ge and III-V MOSFETs 10:30 - 12:10
Lunch 12:10 - 13:10
K1 Keynote Speech (I) 13:10 - 14:00
S8 Low Frequency Noise 14:00 - 15:20
Break 15:20 - 15:35
S9 Memory 15:35 - 16:55
Break 16:55 - 17:05
K2 Keynote Speech (II) 17:05 - 17:55
Closing Remarks and Awarding Ceremony 17:55 - 18:10
Banquet (at "Royal Blue Hall", Tokyo Tech Front) 18:10 - 20:00

List of Papers

Remark: The presenter of each paper is marked with "*".

Thursday, January 20, 2011

Session S1 High-k/Metal Gate (I)
Time: 9:40 - 10:50 Thursday, January 20, 2011
Chairs: Masaaki Niwa (Panasonic, Japan), Wenwu Wang (Chinese Academy of Sciences, China)

S1-1 (Time: 9:40 - 10:10)

Title	(Invited Paper) On the Origin of Mobility Reduction in Ultrathin EOT HK/MG CMOS Devices: Impact from Gate-Stack and Device Architecture
Author	*Lars-Ake Ragnarsson, Jerome Mitard, Sug-Hun Hong, Shinji Takeoka, Joshua Tseng, Wei-E Wang, Shinpei Yamaguchi (IMEC, Belgium), Lionel Trojman (Universidad San Francisco de Quito-El Politecnico, Ecuador), Thomas Kauerauf, An De Keersgieter, Tom Schram, Erika Röhr, Nadine Collaert, Malgorzata Jurczak (IMEC, Belgium), Konstantin Bourdelle (Soitec, France), Bich-Yen Nguyen (Soitec-USA, U.S.A.), Philippe Absil, Thomas Yves Hoffmann (IMEC, Belgium)
Page	pp. 1 - 4

S1-2 (Time: 10:10 - 10:30)

Title	Electrical Properties of Epitaxial HfO₂ Films on Si (100) and Si (111) Substrates Studied for Application in Silicon Nanowire MOSFETs
Author	*Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Hiroyuki Ota (AIST, Japan)
Page	pp. 5 - 6

S1-3 (Time: 10:30 - 10:50)

Title	Demonstration of Very High-k HfO₂ (k~50) by Suppressing Martensitic Transformation in Thin Dielectric Films
Author	*Yasuhiro Nakajima, Koji Kita, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 7 - 8

Session S2 High-k/Metal Gate (II)
Time: 11:00 - 12:00 Thursday, January 20, 2011
Chairs: Wenwu Wang (Chinese Academy of Sciences, China), Masaaki Niwa (Panasonic, Japan)

S2-1 (Time: 11:00 - 11:20)

Title	Effect of Y Content in Ta_1-x Y_x C Gate Electrodes on V_fb Control for Hf-based High-k
Author	*Pattira Homhuan (Chulalongkorn Univ., Thailand), Toshihide Nabatame, Toyohiro Chikyow (NIMS, Japan), Sukkaneste Tungasmita (Chulalongkorn Univ., Thailand)
Page	pp. 9 - 10

S2-2 (Time: 11:20 - 11:40)

Title	Rare Earth Oxide Capping Effect on La₂O₃ Gate Dielectrics toward EOT of 0.5nm
Author	*Miyuki Kouda, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 11 - 12

S2-3 (Time: 11:40 - 12:00)

Title	Interface Layer Scavenging and Defect Generation in LaLuO₃/Ge MIS Gate Stack
Author	*Toshiyuki Tabata, Choong Hyun Lee, Koji Kita, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan)
Page	pp. 13 - 14

Session S3 Graphene
Time: 13:10 - 14:20 Thursday, January 20, 2011
Chairs: Byoung Hun Lee (GIST, Republic of Korea), Hiroki Kondo (Nagoya Univ., Japan)

S3-1 (Time: 13:10 - 13:40)

Title	(Invited Paper) Peculiar Electronic and Transport Properties of Graphene
Author	*Tsuneya Ando (Tokyo Inst. of Tech., Japan)
Page	pp. 15 - 18

S3-2 (Time: 13:40 - 14:00)

Title	A Strong Interaction of Exfoliated Graphene with SiO₂/Si Substrate
Author	*Takaaki Yamashita, Kosuke Nagashio, Tomonori Nishimura, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 19 - 20

S3-3 (Time: 14:00 - 14:20)

Title	Characteristics of Very Low Temperature ALD Al₂O₃ Gate Dielectric for Top Gate Graphene MOSFET Applications
Author	*Young Gon Lee, Chang Goo Kang, Sang Kyung Lee (Gwangju Inst. of Science and Tech., Republic of Korea), Kyu-Jeong Choi (NCD Technology, Republic of Korea), Chun Hum Cho, Hyeon Jun Hwang, Seung Yong Lee, Sung Kwan Lim, Uk Jin Jung, Byoung Hun Lee (Gwangju Inst. of Science and Tech., Republic of Korea)
Page	pp. 21 - 22

Session S4 Process and Characterization (I)
Time: 14:30 - 15:30 Thursday, January 20, 2011
Chairs: Hiroshi Nohira (Tokyo City Univ., Japan), Yoshihiro Sugita (Fujitsu, Japan)

S4-1 (Time: 14:30 - 14:50)

Title	Direct-contact Higher-k HfO₂ Gate Stacks by Oxygen-controlled Cap-PDA Technique
Author	*Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota (AIST, Japan)
Page	pp. 23 - 24

S4-2 (Time: 14:50 - 15:10)

Title	XPS Study of Interfacial Reaction between Metal and Ge Oxide
Author	*Akio Ohta, Tomohiro Fujioka, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 25 - 26

S4-3 (Time: 15:10 - 15:30)

Title	Influence of Light Radiation on Electrical Properties of Al₂O₃/Ge and GeO₂/Ge Gate Stacks in Nitrogen Plasma
Author	*Kusumandari, Wakana Takeuchi, Kimihiko Kato, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 27 - 28

Session S5 Process and Characterization (II)
Time: 15:45 - 17:05 Thursday, January 20, 2011
Chairs: Yuji Takakuwa (Tohoku Univ., Japan), Yoshihiro Sugita (Fujitsu, Japan)

S5-1 (Time: 15:45 - 16:05)

Title	Oxidation-induced Diffusion of C and Ge on Si_1-xGe_x and Si_1-xC_x Alloy Layers Studied by Real-time Photoelectron Spectroscopy
Author	*Hideaki Hozumi, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (Akita National College of Tech., Japan), Toshiteru Kaga (Tohoku Univ., Japan), Yuden Teraoka (Japan Atomic Energy Agency, Japan), Yuji Takakuwa (Tohoku Univ., Japan)
Page	pp. 29 - 30

S5-2 (Time: 16:05 - 16:25)

Title	Kinetic Effects of Oxygen Vacancy Formed by GeO₂/Ge Interfacial Reaction
Author	*Sheng Kai Wang (Univ. of Tokyo, Japan), Koji Kita, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan)
Page	pp. 31 - 32

S5-3 (Time: 16:25 - 16:45)

Title	Prediction of Parameter Fluctuation Induced by Plasma Charging Damage in High-k MOSFET
Author	*Koji Eriguchi, Masayuki Kamei, Yoshinori Takao, Kouichi Ono (Kyoto Univ., Japan)
Page	pp. 33 - 34

S5-4 (Time: 16:45 - 17:05)

Title	pH-sensing Characterization of Programmable Sm₂O₃/Si₃N₄/SiO₂/Si EIS Sensor with Rapid Thermal Annealing
Author	Tseng-Fu Lu, Jer-Chyi Wang, Hui-Yu Shih (Chang Gung Univ., Taiwan), Chia-Ming Yang (Inotera Memories, Inc., Taiwan), *Chieh-Hung Chuang, Chao-Sung Lai, Chyuan-Haur Kao, Tung-Ming Pan (Chang Gung Univ., Taiwan)
Page	pp. 35 - 36

Session P Poster Session
Time: 17:10 - 19:40 Thursday, January 20, 2011
Chairs: Takeo Matsuki (Renesas Electronics, Japan), Shinji Migita (AIST, Japan)

[High-k/Metal Gate]

P-1

Title La Induced Passivation of High-k Bulk and Interface Defects in Poly-Si/TiN/HfLaSiO/SiO₂ Stacks

Author *Masayuki Saeki, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)

Page pp. 37 - 38

P-2

Title	Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
Author	*Takashi Yamamoto, Shingo Ogawa (Toray Research Center, Inc., Japan), Hiroaki Arimura, Masayuki Saeki, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 39 - 40

P-3

Title	Influences of W Electrodes Thickness on Electrical Properties of High Temperature Annealed La₂O₃ MOS Devices for EOT of 0.5 nm
Author	*Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 41 - 42

P-4

Title	Preparation and Electrical Characterization of CeO₂ Films for Gate Dielectrics Application: Comparative Study of CVD and ALD Processes
Author	*Miyuki Kouda, Kenji Ozawa, Kuniyuki Kakushima, Parhat Ahmet, Hiroshi Iwai (Tokyo Inst. of Tech., Japan), Yuji Urabe, Tetsuji Yasuda (AIST, Japan)
Page	pp. 43 - 44

P-5

Title	Effect of Nitrogen Concentration of Hf_xN_y for HfON Formation Utilizing ECR Plasma Oxidation
Author	*Takato Ohnishi, Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan)
Page	pp. 45 - 46

P-6

Title	Structural and Electrical Properties of R.F. Sputtered HfTaO_x Films for an Amorphous High-k Gate Insulator (Withdrawn (No show))
Author	*M.K. Hota, C. Mahata, S. Mallik (Indian Inst. of Tech. Kharagpur, India), C.K. Sarkar (Jadavpur Univ., India), C.K. Maiti (Indian Inst. of Tech. Kharagpur, India)
Page	pp. 47 - 48

P-7

Title	Growth Al₂O₃ Thin Films Using High-Energy H₂O Generated by a Catalytic Reaction on Pt Nanoparticles
Author	Kazuki Nagata, Hitoshi Miura, Yutaka Ooshima, *Kanji Yasui (Nagaoka Univ. of Tech., Japan)
Page	pp. 49 - 50

[Process and Characterization]

P-8

Title Formation of Ultra Thin Titanium Oxide on Germanium by Atomic Layer Deposition using TEMAT and O₃

Author *Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)

Page pp. 51 - 52

P-9

Title	Effects of Thermal Annealing on Modification of CVD SiO₂ Network and Removal of Residual Impurities
Author	*Mitsuru Sometani, Ryu Hasunuma (Univ. of Tsukuba, Japan), Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Device Technology Co., Ltd, Japan), Akira Uedono, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 53 - 54

P-10

Title	High Pressure Chemical Vapor Oxidation of Silicon Carbide
Author	*K. Kalai Selvi, T Sreenidhi, Nandita DasGupta (Indian Inst. of Tech. Madras, India), Heiner Ryssel (Universitaet Erlangen, Germany), Anton Bauer (Fraunhofer IISB, Germany)
Page	pp. 55 - 56

P-11

Title	Growth of Epitaxial BiFeO₃/SrTiO₃Artificial Superlattice Structure by RF Sputtering
Author	*Shang-Jui Chiu (National Tsing Hua Univ., Taiwan), Yen-Ting Liu (National Chiao Tung Univ., Taiwan), Hsin-Yi Lee (National Synchrotron Radiation Research Center, Taiwan), Ge-Ping Yu, Jia-Hong Huang (National Tsing Hua Univ., Taiwan)
Page	pp. 57 - 58

P-12

Title	Dielectric Properties of Electrospun Polylactide-polyglycolide Nanofibrous Membranes
Author	Shih-Jung Liu, *Chun-Yi Liaw (Chang Gung Univ., Taiwan)
Page	pp. 59 - 60

P-13

Title	Reliability Characteristics of Multilayer Dielectric Thin Films for Future MIM Capacitors
Author	*Sang-Uk Park, Hyuk-Min Kwon, In-Shik Han, Jung-Deuk Bok, Yi-Jung Jung, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)
Page	pp. 61 - 62

P-14

Title	High-Quality SOG-Based Oxide as a Matrix for Embedding HfO₂ Nanoparticles for MOS Devices
Author	*Joel Molina, AnaLuz Muñoz, Alfonso Torres, Mauro Landa, Pablo Alarcon, Manuel Escobar (National Institute of Astrophysics, Optics and Electronics, Mexico)
Page	pp. 63 - 64

P-15

Title	Modeling of Gate Dielectric Structure Variations in Amorphous InGaZnO TFTs
Author	*Suehye Park, Edward Namkyu Cho, Chang Eun Kim, Ilgu Yun (Yonsei Univ., Republic of Korea)
Page	pp. 65 - 66

P-16

Title	Sulfur Passivation of Germanium Surface by Vapor-phase Sulfidation at Elevated Temperature
Author	*Tomonori Nishimura, ChoongHyun Lee, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 67 - 68

P-17

Title	In situ Synchrotron Radiation Photoemission Study of Ge₃N₄/Ge Structures Formed by Plasma Nitridation
Author	*Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto (Osaka Univ., Japan), Akitaka Yoshigoe, Yuden Teraoka (Japan Atomic Energy Agency, Japan), Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 69 - 70

P-18

Title	Control of Interfacial Properties of Al₂O₃/Ge Gate Stack Structure using Radical Nitridation Technique
Author	*Kimihiko Kato, Shinya Kyogoku, Mitsuo Sakashita, Wakana Takeuchi, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 71 - 72

P-19

Title	Nitrogen Role in Interface Traps Suppression in Al₂O₃ Films (Withdrawn (No show))
Author	*Dong Wook Kwak, Dong Wha Lee, Chung Hwan Shin, Youn Hwan Lee, Hoon Young Cho (Dongguk Univ., Republic of Korea)
Page	pp. 73 - 74

P-20

Title	Sensors Based on Quartz Crystal Microbalance Coated with Thin Polyaniline Films (Withdrawn (No show))
Author	*Nagy L. Torad, Mohamad M. Ayad, Gad B. El Hefnawy (Tanta Univ., Egypt)
Page	pp. 75 - 76

P-21

Title	Thickness Effect and Rapid Thermal Annealing Treatment of Single Atomic Layer Deposition HfO₂ Layer on EIS for pH Sensor Application
Author	*Hao-Chun Chuang, Tseng-Fu Lu, Jer-Chyi Wang (Chang Gung Univ., Taiwan), Chia-Ming Yang (Inotera Memories, Inc., Taiwan), Chao-Sung Lai (Chang Gung Univ., Taiwan)
Page	pp. 77 - 78

P-22

Title	Thermally Stable Single Molecular Layer with π-bonds on Silicon: Pyrazine / Si(001)-2x1
Author	*Hirokazu Yokohara, Chihiro Kunihara, Masaru Shimomura (Shizuoka Univ., Japan)
Page	pp. 79 - 80

P-23

Title	Oxidation of Vicinal Si(001) Surfaces: ReaxFF based on Molecular Dynamics Simulation
Author	Kyung-Han Yun, *Eung-Kwan Lee, Heechae Choi, Geunsup Yoon, Yubin Hwang, Byung-Hyun Kim, Yong-Chae Chung (Hanyang Univ., Republic of Korea)
Page	pp. 81 - 82

[Performance Enhancement]

P-24

Title Theoretical Study on Epitaxial Graphene Growth on SiC(0001) Surface

Author *Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Corp., Japan), Masao Nagase (Tokushima Univ., Japan)

Page pp. 83 - 84

P-25

Title	A Study on the Electrical Characteristics and Dispersion of Carbon Nanotube by Plasma and Microwave Treatment (Withdrawn)
Author	*Sang-Jin Cho (Sungkyunkwan Univ., Republic of Korea), Shankar Prasad Shrestha (Tribhuvan Univ., Nepal), Chunyan Jin, Jin-Hyo Boo (Sungkyunkwan Univ., Republic of Korea)

P-26

Title	Energetics of Graphene Structure Formation on 3C-SiC(111) Surface by Epitaxial Growth Process: A Molecular Dynamics Study
Author	*Yubin Hwang, Eung-Kwan Lee, Heechae Choi, Yong-Chae Chung (Hanyang Univ., Republic of Korea)
Page	pp. 85 - 86

P-27

Title	Uniaxial Stress Effect and Hole Mobility in Strained SiGe PMOSFETs
Author	*B.-F. Hsieh, S. T. Chang (National Chung Hsing Univ., Taiwan), M. H. Lee (National Taiwan Normal Univ., Taiwan)
Page	pp. 87 - 88

P-28

Title	Study of High-k/In_0.53Ga_0.47As Interface by HX-PES
Author	*Koji Yamashita, Ryuuya Numajiri, Masato Watanabe, Hiroshi Nohira (Tokyo City Univ., Japan), Hiroshi Iwai, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)
Page	pp. 89 - 90

P-29

Title	Effects of In_0.53Ga_0.47As Surface Preparation on Electrical Characteristics of MOS Device
Author	*Darius Zade, Takashi Kanda, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 91 - 92

P-30

Title	The Substrate Orientation Effect of P-type Tunneling Field Effect Transistors on Si (100) and (110) Wafers
Author	M. H. Lee (National Taiwan Normal Univ., Taiwan), *B.-F. Hsieh (National Chung Hsing Univ., Taiwan), C.-H. Lee (National Taiwan Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan)
Page	pp. 93 - 94

P-31

Title	Performance Improvement with High Efficiency and Low Damage N₂ Plasma Pretreatment for LTPS TFTs
Author	Ching-Lin Fan, *Yi-Yan Lin, Shou-Kuan Wang (National Taiwan Univ. of Science and Tech., Taiwan)
Page	pp. 95 - 96

[Reliability]

P-32

Title Dependence of Restoration from Electrical Damages in HfSiO_x Films on Annealing Ambient

Author *Chihiro Tamura, Yuuki Kikuchi, Takashi Isoda, Kenji Ohmori, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)

Page pp. 97 - 98

P-33

Title	Degradation Factors in HfSiON during Electrical Stress Application
Author	*Yuuki Kikuchi, Chihiro Tamura, Yuichi Murakami, Kenji Ohmori (Univ. of Tsukuba, Japan), Ryu Hasunuma, Kikuo Yamabe (Tsukuba Research Center for Interdisciplinary Materials Science, Japan)
Page	pp. 99 - 100

P-34

Title	Reliability of HfYO_x Gate Dielectrics on Si_0.81Ge_0.19 Heterolayers under Constant Voltage Stressing (Withdrawn (No show))
Author	*Sandipan Mallik, Chandreswar Mahata, Mrinal Kanti Hota (Indian Inst. of Tech. Kharagpur, India), Chandan Kumar Sarkar (Jadavpur Univ., Jadavpur, India), Chinmay Kumar Maiti (Indian Inst. of Tech. Kharagpur, India)
Page	pp. 101 - 102

P-35

Title	Effect of Substrate Biasing on Low-Frequency Noise in n-MOSFETs for Different Impurity Concentrations
Author	*Ranga Hettiarachchi, Takeo Matsuki, Wei Feng (Waseda Univ., Japan), Keisaku Yamada, Kenji Ohmori (Univ. of Tsukuba, Japan)
Page	pp. 103 - 104

P-36

Title	Effect of Hydrogen Diffusivity on the NBTI Degradation of an Advanced-process 45nm High-k PMOS (Withdrawn)
Author	Sharifah Fatmadiana Wan Muhamad Hatta, Dayanasari Abdul Hadi, *Norhayati Soin (Univ. of Malaya, Malaysia)
Page	pp. 105 - 106

P-37

Title	High Reliable SiO₂ Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing
Author	*Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ., Japan)
Page	pp. 107 - 108

[Memory]

P-38

Title Control of Current Path in Resistive Random Access Memory Using Gold Nano Particles

Author *Kentaro Kawano, Mutsunori Uenuma, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST, Japan)

Page pp. 109 - 110

P-39

Title	Carrier Transport in UV-illuminated Silicon Nitride Films
Author	*Kokichi Ishikawa, Kiyoteru Kobayashi (Tokai Univ., Japan)
Page	pp. 111 - 112

P-40

Title	Impact of Y₂O₃ Addition of Chemical Bonding Features and Resistance Switching of TiO₂
Author	*Akio Ohta, Yuta Goto, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 113 - 114

P-41

Title	High-k Al₂O₃/WO_x Charge Trapping Flash and Resistive Switching Memories
Author	Writam Banerjee, *Siddheswar Maikap (Chang Gung Univ., Taiwan)
Page	pp. 115 - 116

P-42

Title	TiN Metal Nanocrystal Memory Using HfO₂ and Al₂O₃ Oxides
Author	*Chang Eun Kim, Pyung Moon, Edward Namkyu Cho, Ilgu Yun (Yonsei Univ., Republic of Korea)
Page	pp. 117 - 118

[Physics and Theory]

P-43

Title Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors

Author *Yeonghun Lee, Kuniyuki Kakushima, Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)

Page pp. 119 - 120

P-44

Title	Remote Plasma-Deposited GeO₂ with Quartz-like Local Bonding: Band-Edge Comparisons with SiO₂ and Si₃N₄ Gate Dielectrics
Author	*Gerry Lucovsky, Daniel Zeller, Kun Wu, Jerry L. Whitten (North Carolina State Univ., U.S.A.)
Page	pp. 121 - 122

P-45

Title	Hopping-induced Mixed Valence in GdSc_1-xTi_xO₃ Alloys Detected in O K edge, and Ti and Sc L_2,3 XAS Spectra
Author	*Leonardo Miotti, Gerry Lucovsky, Karen Paz Bastos (North Carolina State Univ., U.S.A.), Carolina Adamo, Darrell Schlom (Cornell Univ., U.S.A.)
Page	pp. 123 - 124

P-46

Title	Analysis of Silicon Nanowires by Local Electrical Conductivity Based on the Rigged QED Theory
Author	*Yuji Ikeda, Masato Senami, Akitomo Tachibana (Kyoto Univ., Japan)
Page	pp. 125 - 126

P-47

Title	A Molecular Dynamics Study of Oxidation Behavior of Silicon Nanowires
Author	*Byung-Hyun Kim, Gyubong Kim, Mina Park, Mauludi Ariesto Pamungkas, Kwang-Ryeol Lee (KIST, Republic of Korea), Yong-Chae Chung (Hanyang Univ., Republic of Korea)
Page	pp. 127 - 128

P-48

Title	Thickness-dependent Electric Properties and Electronic Structure of LaAlO₃/SrTiO₃ Heterojunctions
Author	*Heechae Choi, Hayan Park, Hong-Lae Park, Yong-Chae Chung (Hanyang Univ., Republic of Korea)
Page	pp. 129 - 130

P-49

Title	Relationship between Dipole Moment of Organic Compound Impurity in Liquid Crystal Field and Leakage Current of Liquid Crystal Cell
Author	*Ikue Kaneko, Kazuhiro Tachibana, Tatsuo Nishina, Koichiro Yonetake, Yoshihiro Ohba (Yamagata Univ., Japan)
Page	pp. 131 - 132

P-50

Title	Dynamic Depletion Width Evaluated by Self-Consistent Poisson-Schrödinger Pair Calculations
Author	*Che-Sheng Chung (National Taiwan Univ. of Science and Tech., Taiwan)
Page	pp. 133 - 134

P-51

Title	Effect of Channel Width (~10 nm) on Current Fluctuation Studied by EMC-MD Simulation
Author	*Takefumi Kamioka (Waseda Univ., Japan), Kenji Ohmori, Kenji Shiraishi (Univ. of Tsukuba, Japan), Yoshinari Kamakura (Osaka Univ., Japan), Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 135 - 136

Friday, January 21, 2011

Session S6 Oxide Physics
Time: 9:30 - 10:20 Friday, January 21, 2011
Chairs: Hiroyuki Kageshima (NTT, Japan), Seiichi Miyazaki (Nagoya Univ., Japan)

S6-1 (Time: 9:30 - 10:00)

Title	(Special Talk) A Multiplet Theory Model for O-vacancy Defects in High-k Transition Metal Elemental and Complex Oxides
Author	*Gerry Lucovsky, Leonardo Miotti, Karen Paz Bastos (NC State Univ., U.S.A.)
Page	pp. 137 - 138

S6-2 (Time: 10:00 - 10:20)

Title	Electric Dipole at High-k/SiO₂ Interface and Physical Origin by Dielectric Contact Induced Gap States
Author	*Xiaolei Wang, Kai Han, Wenwu Wang, Xueli Ma, Jinjuan Xiang, Dapeng Chen (Chinese Academy of Sciences, China), Jing Zhang (North China Univ. of Tech., China)
Page	pp. 139 - 140

Session S7 Ge and III-V MOSFETs
Time: 10:30 - 12:10 Friday, January 21, 2011
Chairs: Yoshinari Kamakura (Osaka Univ., Japan), Noriyuki Miyata (AIST, Japan)

S7-1

Title	(Invited Paper) Prospects of Si and SiGe Nanowire Structures and Devices for Next-Generation Green Electronics and Clean Energy (Withdrawn)
Author	*Guo-Qiang Lo (Inst. of Microelectronics, Singapore)

S7-2 (Time: 10:30 - 10:50)

Title	Junctionless Ge p-MOSFETs Fabricated on Ultra-thin GeOI Substrate
Author	*Dan Dan Zhao, Tomonori Nishimura, Choong Hyun Lee, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 141 - 142

S7-3 (Time: 10:50 - 11:10)

Title	Direct Comparison of Electron and Hole Mobility in a Single GeOI MOSFET with Ge/SiO₂ Interface
Author	*Choong Hyun Lee (Univ. of Tokyo/JST-CREST, Japan), Dan Dan Zhao (Univ. of Tokyo, Japan), Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan)
Page	pp. 143 - 144

S7-4 (Time: 11:10 - 11:30)

Title	Impact of Cation Surface Termination on the Electrical Characteristics of HfO₂/InGaAs(100) MOS Capacitors
Author	*Akihiro Ohtake (NIMS, Japan), Noriyuki Miyata, Yuji Urabe, Tetsuji Yasuda (AIST, Japan)
Page	pp. 145 - 146

S7-5 (Time: 11:30 - 11:50)

Title	ALD-Al₂O₃/InGaAs MOS Structures with Interfacial Control Layers Formed by Nitridation of InGaAs Surfaces
Author	*Takuya Hoshii, Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama (Univ. of Tokyo, Japan), Hisashi Yamada, Masahiko Hata (Sumitomo Chemical Co. Ltd., Japan), Tetsuji Yasuda (AIST, Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 147 - 148

S7-6 (Time: 11:50 - 12:10)

Title	Impacts of (NH₄)₂S Treatment and ALD Temperature on ALD-Al₂O₃/InP Interface Properties
Author	*Noriyuki Taoka, Masafumi Yokoyama, SangHyeon Kim, Rena Suzuki, Takuya Hoshii, Ryo Iida, Sunghoon Lee (Univ. of Tokyo, Japan), Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda (AIST, Japan), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical Co. Ltd., Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 149 - 150

Session K1 Keynote Speech (I)
Time: 13:10 - 14:00 Friday, January 21, 2011

K1-1 (Time: 13:10 - 14:00)

Title	(Keynote Address) Changing Paradigm for Advanced Gate Stack Evaluation: Reliability Modeling at Atomic Structure Level
Author	*Gennadi Bersuker (SEMATECH, U.S.A.)
Page	p. 151

Session S8 Low Frequency Noise
Time: 14:00 - 15:20 Friday, January 21, 2011
Chairs: Renichi Yamada (Hitachi, Japan), Shimpei Tsujikawa (Sony, Japan)

S8-1 (Time: 14:00 - 14:20)

Title	On the Need for a New Model: Inconsistencies between Observations and Physical Model for Random Telegraph Noise in HKMG MOSFET
Author	*Naoki Tega (Hitachi, Japan), Hiroshi Miki (Hitachi America, U.S.A.), Zhibin Ren, Christopher P. D'Emic, Yu Zhu, David J. Frank, Jin Cai, Michael A. Guillorn, Dae-gyu Park, Wilfried Haensch (IBM, U.S.A.), Kazuyoshi Torii (Hitachi, Japan)
Page	pp. 153 - 154

S8-2 (Time: 14:20 - 14:40)

Title	Dependence of Reliability and Low Frequency Noise on Channel Stress in Nano-Scale NMOSFETs
Author	*Jung-Deuk Bok, In-Shik Han, Hyuk-Min Kwon, Sang-Uk Park, Yi-Jung Jung, Hong-Shik Shin, Se-Kyung Oh, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)
Page	pp. 155 - 156

S8-3 (Time: 14:40 - 15:00)

Title	Influence of Gate-first Process on Low-frequency Noise in EOT-scaling of Poly-Si/TiN/HfO₂/SiO₂ Gate-stack MOSFETs
Author	*Takeo Matsuki, Ranga Hettiarachchi, Wei Feng (Waseda Univ., Japan), Kenji Shiraishi, Keisaku Yamada, Kenji Ohmori (Univ. of Tsukuba, Japan)
Page	pp. 157 - 158

S8-4 (Time: 15:00 - 15:20)

Title	Effect of Nitrogen Concentration on Low Frequency Noise Characteristics of PMOSFETs with Nitrided Gate Oxide
Author	*In-Shik Han, Hyuk-Min Kwon, Sang-Uk Park, Jung-Deuk Bok, Yi-Jung Jung, Young Goo Kim (Chungnam National Univ., Republic of Korea), Hee Hwan Ji, Byoung-Seok Park, Soon-Wook Kim, Kyung-Min Kim, Min-Gyu Lim, Yi-Sun Chung, Jung-Hwan Lee (MagnaChip Semiconductor Ltd, Republic of Korea), Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)
Page	pp. 159 - 160

Session S9 Memory
Time: 15:35 - 16:55 Friday, January 21, 2011
Chairs: Koichi Muraoka (Toshiba, Japan), Yukiharu Uraoka (NAIST, Japan)

S9-1 (Time: 15:35 - 15:55)

Title	A Possible Model of Resistive Switching in Ti/Pr_0.5Ca_0.5MnO₃ Junctions
Author	*Shutaro Asanuma, Hiroyuki Yamada, Hiroshi Akoh, Akihito Sawa (AIST, Japan)
Page	pp. 161 - 162

S9-2 (Time: 15:55 - 16:15)

Title	Characterization of Resistance-Switching of SiO_x Dielectrics
Author	*Yuta Goto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 163 - 164

S9-3 (Time: 16:15 - 16:35)

Title	Improved Switching Properties of Gadolinium Oxide ReRAM by CF₄ Plasma Treatment
Author	*Yu-Ren Ye, Jer-Chyi Wang, Chao-Sung Lai (Chang Gung Univ., Taiwan)
Page	pp. 165 - 166

S9-4 (Time: 16:35 - 16:55)

Title	Resistive Memory Effect of Nano Particle Utilizing Ferritin Protein
Author	*Mutsunori Uenuma, Kentaro Kawano, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST, Japan)
Page	pp. 167 - 168

Session K2 Keynote Speech (II)
Time: 17:05 - 17:55 Friday, January 21, 2011

K2-1 (Time: 17:05 - 17:55)

Title	(Keynote Address) Technological Challenges in SiC MOS Devices
Author	*Hiroyuki Matsunami (JST Innovation Plaza, Japan)
Page	pp. 169 - 171

Title	La Induced Passivation of High-k Bulk and Interface Defects in Poly-Si/TiN/HfLaSiO/SiO₂ Stacks
Author	*Masayuki Saeki, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 37 - 38

Title	Formation of Ultra Thin Titanium Oxide on Germanium by Atomic Layer Deposition using TEMAT and O₃
Author	*Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 51 - 52

Title	Theoretical Study on Epitaxial Graphene Growth on SiC(0001) Surface
Author	*Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Corp., Japan), Masao Nagase (Tokushima Univ., Japan)
Page	pp. 83 - 84

Title	Dependence of Restoration from Electrical Damages in HfSiO_x Films on Annealing Ambient
Author	*Chihiro Tamura, Yuuki Kikuchi, Takashi Isoda, Kenji Ohmori, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 97 - 98

Title	Control of Current Path in Resistive Random Access Memory Using Gold Nano Particles
Author	*Kentaro Kawano, Mutsunori Uenuma, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST, Japan)
Page	pp. 109 - 110

Title	Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors
Author	*Yeonghun Lee, Kuniyuki Kakushima, Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 119 - 120

International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY Technical Program

Session Schedule

List of Papers

International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program