[High-k/Metal Gate]
| Title | La Induced Passivation of High-k Bulk and Interface Defects in Poly-Si/TiN/HfLaSiO/SiO2 Stacks |
| Author | *Masayuki Saeki, Hiroaki Arimura, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan) |
| Page | pp. 37 - 38 |
| Title | Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks |
| Author | *Takashi Yamamoto, Shingo Ogawa (Toray Research Center, Inc., Japan), Hiroaki Arimura, Masayuki Saeki, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan) |
| Page | pp. 39 - 40 |
| Title | Influences of W Electrodes Thickness on Electrical Properties of High Temperature Annealed La2O3 MOS Devices for EOT of 0.5 nm |
| Author | *Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan) |
| Page | pp. 41 - 42 |
| Title | Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of CVD and ALD Processes |
| Author | *Miyuki Kouda, Kenji Ozawa, Kuniyuki Kakushima, Parhat Ahmet, Hiroshi Iwai (Tokyo Inst. of Tech., Japan), Yuji Urabe, Tetsuji Yasuda (AIST, Japan) |
| Page | pp. 43 - 44 |
| Title | Effect of Nitrogen Concentration of HfxNy for HfON Formation Utilizing ECR Plasma Oxidation |
| Author | *Takato Ohnishi, Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan) |
| Page | pp. 45 - 46 |
| Title | Structural and Electrical Properties of R.F. Sputtered HfTaOx Films for an Amorphous High-k Gate Insulator (Withdrawn (No show)) |
| Author | *M.K. Hota, C. Mahata, S. Mallik (Indian Inst. of Tech. Kharagpur, India), C.K. Sarkar (Jadavpur Univ., India), C.K. Maiti (Indian Inst. of Tech. Kharagpur, India) |
| Page | pp. 47 - 48 |
| Title | Growth Al2O3 Thin Films Using High-Energy H2O Generated by a Catalytic Reaction on Pt Nanoparticles |
| Author | Kazuki Nagata, Hitoshi Miura, Yutaka Ooshima, *Kanji Yasui (Nagaoka Univ. of Tech., Japan) |
| Page | pp. 49 - 50 |
[Process and Characterization]
| Title | Formation of Ultra Thin Titanium Oxide on Germanium by Atomic Layer Deposition using TEMAT and O3 |
| Author | *Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 51 - 52 |
| Title | Effects of Thermal Annealing on Modification of CVD SiO2 Network and Removal of Residual Impurities |
| Author | *Mitsuru Sometani, Ryu Hasunuma (Univ. of Tsukuba, Japan), Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Device Technology Co., Ltd, Japan), Akira Uedono, Kikuo Yamabe (Univ. of Tsukuba, Japan) |
| Page | pp. 53 - 54 |
| Title | High Pressure Chemical Vapor Oxidation of Silicon Carbide |
| Author | *K. Kalai Selvi, T Sreenidhi, Nandita DasGupta (Indian Inst. of Tech. Madras, India), Heiner Ryssel (Universitaet Erlangen, Germany), Anton Bauer (Fraunhofer IISB, Germany) |
| Page | pp. 55 - 56 |
| Title | Growth of Epitaxial BiFeO3/SrTiO3Artificial Superlattice Structure by RF Sputtering |
| Author | *Shang-Jui Chiu (National Tsing Hua Univ., Taiwan), Yen-Ting Liu (National Chiao Tung Univ., Taiwan), Hsin-Yi Lee (National Synchrotron Radiation Research Center, Taiwan), Ge-Ping Yu, Jia-Hong Huang (National Tsing Hua Univ., Taiwan) |
| Page | pp. 57 - 58 |
| Title | Dielectric Properties of Electrospun Polylactide-polyglycolide Nanofibrous Membranes |
| Author | Shih-Jung Liu, *Chun-Yi Liaw (Chang Gung Univ., Taiwan) |
| Page | pp. 59 - 60 |
| Title | Reliability Characteristics of Multilayer Dielectric Thin Films for Future MIM Capacitors |
| Author | *Sang-Uk Park, Hyuk-Min Kwon, In-Shik Han, Jung-Deuk Bok, Yi-Jung Jung, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea) |
| Page | pp. 61 - 62 |
| Title | High-Quality SOG-Based Oxide as a Matrix for Embedding HfO2 Nanoparticles for MOS Devices |
| Author | *Joel Molina, AnaLuz Muñoz, Alfonso Torres, Mauro Landa, Pablo Alarcon, Manuel Escobar (National Institute of Astrophysics, Optics and Electronics, Mexico) |
| Page | pp. 63 - 64 |
| Title | Modeling of Gate Dielectric Structure Variations in Amorphous InGaZnO TFTs |
| Author | *Suehye Park, Edward Namkyu Cho, Chang Eun Kim, Ilgu Yun (Yonsei Univ., Republic of Korea) |
| Page | pp. 65 - 66 |
| Title | Sulfur Passivation of Germanium Surface by Vapor-phase Sulfidation at Elevated Temperature |
| Author | *Tomonori Nishimura, ChoongHyun Lee, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 67 - 68 |
| Title | In situ Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation |
| Author | *Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto (Osaka Univ., Japan), Akitaka Yoshigoe, Yuden Teraoka (Japan Atomic Energy Agency, Japan), Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan) |
| Page | pp. 69 - 70 |
| Title | Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique |
| Author | *Kimihiko Kato, Shinya Kyogoku, Mitsuo Sakashita, Wakana Takeuchi, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan) |
| Page | pp. 71 - 72 |
| Title | Nitrogen Role in Interface Traps Suppression in Al2O3 Films (Withdrawn (No show)) |
| Author | *Dong Wook Kwak, Dong Wha Lee, Chung Hwan Shin, Youn Hwan Lee, Hoon Young Cho (Dongguk Univ., Republic of Korea) |
| Page | pp. 73 - 74 |
| Title | Sensors Based on Quartz Crystal Microbalance Coated with Thin Polyaniline Films (Withdrawn (No show)) |
| Author | *Nagy L. Torad, Mohamad M. Ayad, Gad B. El Hefnawy (Tanta Univ., Egypt) |
| Page | pp. 75 - 76 |
| Title | Thickness Effect and Rapid Thermal Annealing Treatment of Single Atomic Layer Deposition HfO2 Layer on EIS for pH Sensor Application |
| Author | *Hao-Chun Chuang, Tseng-Fu Lu, Jer-Chyi Wang (Chang Gung Univ., Taiwan), Chia-Ming Yang (Inotera Memories, Inc., Taiwan), Chao-Sung Lai (Chang Gung Univ., Taiwan) |
| Page | pp. 77 - 78 |
| Title | Thermally Stable Single Molecular Layer with π-bonds on Silicon: Pyrazine / Si(001)-2x1 |
| Author | *Hirokazu Yokohara, Chihiro Kunihara, Masaru Shimomura (Shizuoka Univ., Japan) |
| Page | pp. 79 - 80 |
| Title | Oxidation of Vicinal Si(001) Surfaces: ReaxFF based on Molecular Dynamics Simulation |
| Author | Kyung-Han Yun, *Eung-Kwan Lee, Heechae Choi, Geunsup Yoon, Yubin Hwang, Byung-Hyun Kim, Yong-Chae Chung (Hanyang Univ., Republic of Korea) |
| Page | pp. 81 - 82 |
[Performance Enhancement]
| Title | Theoretical Study on Epitaxial Graphene Growth on SiC(0001) Surface |
| Author | *Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Corp., Japan), Masao Nagase (Tokushima Univ., Japan) |
| Page | pp. 83 - 84 |
| Title | A Study on the Electrical Characteristics and Dispersion of Carbon Nanotube by Plasma and Microwave Treatment (Withdrawn) |
| Author | *Sang-Jin Cho (Sungkyunkwan Univ., Republic of Korea), Shankar Prasad Shrestha (Tribhuvan Univ., Nepal), Chunyan Jin, Jin-Hyo Boo (Sungkyunkwan Univ., Republic of Korea) |
| Title | Energetics of Graphene Structure Formation on 3C-SiC(111) Surface by Epitaxial Growth Process: A Molecular Dynamics Study |
| Author | *Yubin Hwang, Eung-Kwan Lee, Heechae Choi, Yong-Chae Chung (Hanyang Univ., Republic of Korea) |
| Page | pp. 85 - 86 |
| Title | Uniaxial Stress Effect and Hole Mobility in Strained SiGe PMOSFETs |
| Author | *B.-F. Hsieh, S. T. Chang (National Chung Hsing Univ., Taiwan), M. H. Lee (National Taiwan Normal Univ., Taiwan) |
| Page | pp. 87 - 88 |
| Title | Study of High-k/In0.53Ga0.47As Interface by HX-PES |
| Author | *Koji Yamashita, Ryuuya Numajiri, Masato Watanabe, Hiroshi Nohira (Tokyo City Univ., Japan), Hiroshi Iwai, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan) |
| Page | pp. 89 - 90 |
| Title | Effects of In0.53Ga0.47As Surface Preparation on Electrical Characteristics of MOS Device |
| Author | *Darius Zade, Takashi Kanda, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan) |
| Page | pp. 91 - 92 |
| Title | The Substrate Orientation Effect of P-type Tunneling Field Effect Transistors on Si (100) and (110) Wafers |
| Author | M. H. Lee (National Taiwan Normal Univ., Taiwan), *B.-F. Hsieh (National Chung Hsing Univ., Taiwan), C.-H. Lee (National Taiwan Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan) |
| Page | pp. 93 - 94 |
| Title | Performance Improvement with High Efficiency and Low Damage N2 Plasma Pretreatment for LTPS TFTs |
| Author | Ching-Lin Fan, *Yi-Yan Lin, Shou-Kuan Wang (National Taiwan Univ. of Science and Tech., Taiwan) |
| Page | pp. 95 - 96 |
[Reliability]
| Title | Dependence of Restoration from Electrical Damages in HfSiOx Films on Annealing Ambient |
| Author | *Chihiro Tamura, Yuuki Kikuchi, Takashi Isoda, Kenji Ohmori, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan) |
| Page | pp. 97 - 98 |
| Title | Degradation Factors in HfSiON during Electrical Stress Application |
| Author | *Yuuki Kikuchi, Chihiro Tamura, Yuichi Murakami, Kenji Ohmori (Univ. of Tsukuba, Japan), Ryu Hasunuma, Kikuo Yamabe (Tsukuba Research Center for Interdisciplinary Materials Science, Japan) |
| Page | pp. 99 - 100 |
| Title | Reliability of HfYOx Gate Dielectrics on Si0.81Ge0.19 Heterolayers under Constant Voltage Stressing (Withdrawn (No show)) |
| Author | *Sandipan Mallik, Chandreswar Mahata, Mrinal Kanti Hota (Indian Inst. of Tech. Kharagpur, India), Chandan Kumar Sarkar (Jadavpur Univ., Jadavpur, India), Chinmay Kumar Maiti (Indian Inst. of Tech. Kharagpur, India) |
| Page | pp. 101 - 102 |
| Title | Effect of Substrate Biasing on Low-Frequency Noise in n-MOSFETs for Different Impurity Concentrations |
| Author | *Ranga Hettiarachchi, Takeo Matsuki, Wei Feng (Waseda Univ., Japan), Keisaku Yamada, Kenji Ohmori (Univ. of Tsukuba, Japan) |
| Page | pp. 103 - 104 |
| Title | Effect of Hydrogen Diffusivity on the NBTI Degradation of an Advanced-process 45nm High-k PMOS (Withdrawn) |
| Author | Sharifah Fatmadiana Wan Muhamad Hatta, Dayanasari Abdul Hadi, *Norhayati Soin (Univ. of Malaya, Malaysia) |
| Page | pp. 105 - 106 |
| Title | High Reliable SiO2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing |
| Author | *Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ., Japan) |
| Page | pp. 107 - 108 |
[Memory]
| Title | Control of Current Path in Resistive Random Access Memory Using Gold Nano Particles |
| Author | *Kentaro Kawano, Mutsunori Uenuma, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST, Japan) |
| Page | pp. 109 - 110 |
| Title | Carrier Transport in UV-illuminated Silicon Nitride Films |
| Author | *Kokichi Ishikawa, Kiyoteru Kobayashi (Tokai Univ., Japan) |
| Page | pp. 111 - 112 |
| Title | Impact of Y2O3 Addition of Chemical Bonding Features and Resistance Switching of TiO2 |
| Author | *Akio Ohta, Yuta Goto, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 113 - 114 |
| Title | High-k Al2O3/WOx Charge Trapping Flash and Resistive Switching Memories |
| Author | Writam Banerjee, *Siddheswar Maikap (Chang Gung Univ., Taiwan) |
| Page | pp. 115 - 116 |
| Title | TiN Metal Nanocrystal Memory Using HfO2 and Al2O3 Oxides |
| Author | *Chang Eun Kim, Pyung Moon, Edward Namkyu Cho, Ilgu Yun (Yonsei Univ., Republic of Korea) |
| Page | pp. 117 - 118 |
[Physics and Theory]
| Title | Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors |
| Author | *Yeonghun Lee, Kuniyuki Kakushima, Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan) |
| Page | pp. 119 - 120 |
| Title | Remote Plasma-Deposited GeO2 with Quartz-like Local Bonding: Band-Edge Comparisons with SiO2 and Si3N4 Gate Dielectrics |
| Author | *Gerry Lucovsky, Daniel Zeller, Kun Wu, Jerry L. Whitten (North Carolina State Univ., U.S.A.) |
| Page | pp. 121 - 122 |
| Title | Hopping-induced Mixed Valence in GdSc1-xTixO3 Alloys Detected in O K edge, and Ti and Sc L2,3 XAS Spectra |
| Author | *Leonardo Miotti, Gerry Lucovsky, Karen Paz Bastos (North Carolina State Univ., U.S.A.), Carolina Adamo, Darrell Schlom (Cornell Univ., U.S.A.) |
| Page | pp. 123 - 124 |
| Title | Analysis of Silicon Nanowires by Local Electrical Conductivity Based on the Rigged QED Theory |
| Author | *Yuji Ikeda, Masato Senami, Akitomo Tachibana (Kyoto Univ., Japan) |
| Page | pp. 125 - 126 |
| Title | A Molecular Dynamics Study of Oxidation Behavior of Silicon Nanowires |
| Author | *Byung-Hyun Kim, Gyubong Kim, Mina Park, Mauludi Ariesto Pamungkas, Kwang-Ryeol Lee (KIST, Republic of Korea), Yong-Chae Chung (Hanyang Univ., Republic of Korea) |
| Page | pp. 127 - 128 |
| Title | Thickness-dependent Electric Properties and Electronic Structure of LaAlO3/SrTiO3 Heterojunctions |
| Author | *Heechae Choi, Hayan Park, Hong-Lae Park, Yong-Chae Chung (Hanyang Univ., Republic of Korea) |
| Page | pp. 129 - 130 |
| Title | Relationship between Dipole Moment of Organic Compound Impurity in Liquid Crystal Field and Leakage Current of Liquid Crystal Cell |
| Author | *Ikue Kaneko, Kazuhiro Tachibana, Tatsuo Nishina, Koichiro Yonetake, Yoshihiro Ohba (Yamagata Univ., Japan) |
| Page | pp. 131 - 132 |
| Title | Dynamic Depletion Width Evaluated by Self-Consistent Poisson-Schrödinger Pair Calculations |
| Author | *Che-Sheng Chung (National Taiwan Univ. of Science and Tech., Taiwan) |
| Page | pp. 133 - 134 |
| Title | Effect of Channel Width (~10 nm) on Current Fluctuation Studied by EMC-MD Simulation |
| Author | *Takefumi Kamioka (Waseda Univ., Japan), Kenji Ohmori, Kenji Shiraishi (Univ. of Tsukuba, Japan), Yoshinari Kamakura (Osaka Univ., Japan), Takanobu Watanabe (Waseda Univ., Japan) |
| Page | pp. 135 - 136 |