Title | Oxidation-induced Diffusion of C and Ge on Si1-xGex and Si1-xCx Alloy Layers Studied by Real-time Photoelectron Spectroscopy |
Author | *Hideaki Hozumi, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (Akita National College of Tech., Japan), Toshiteru Kaga (Tohoku Univ., Japan), Yuden Teraoka (Japan Atomic Energy Agency, Japan), Yuji Takakuwa (Tohoku Univ., Japan) |
Page | pp. 29 - 30 |
Title | Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction |
Author | *Sheng Kai Wang (Univ. of Tokyo, Japan), Koji Kita, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan) |
Page | pp. 31 - 32 |
Title | Prediction of Parameter Fluctuation Induced by Plasma Charging Damage in High-k MOSFET |
Author | *Koji Eriguchi, Masayuki Kamei, Yoshinori Takao, Kouichi Ono (Kyoto Univ., Japan) |
Page | pp. 33 - 34 |
Title | pH-sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si EIS Sensor with Rapid Thermal Annealing |
Author | Tseng-Fu Lu, Jer-Chyi Wang, Hui-Yu Shih (Chang Gung Univ., Taiwan), Chia-Ming Yang (Inotera Memories, Inc., Taiwan), *Chieh-Hung Chuang, Chao-Sung Lai, Chyuan-Haur Kao, Tung-Ming Pan (Chang Gung Univ., Taiwan) |
Page | pp. 35 - 36 |