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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S9  Memory
Time: 15:35 - 16:55 Friday, January 21, 2011
Chairs: Koichi Muraoka (Toshiba, Japan), Yukiharu Uraoka (NAIST, Japan)

S9-1 (Time: 15:35 - 15:55)
TitleA Possible Model of Resistive Switching in Ti/Pr0.5Ca0.5MnO3 Junctions
Author*Shutaro Asanuma, Hiroyuki Yamada, Hiroshi Akoh, Akihito Sawa (AIST, Japan)
Pagepp. 161 - 162

S9-2 (Time: 15:55 - 16:15)
TitleCharacterization of Resistance-Switching of SiOx Dielectrics
Author*Yuta Goto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 163 - 164

S9-3 (Time: 16:15 - 16:35)
TitleImproved Switching Properties of Gadolinium Oxide ReRAM by CF4 Plasma Treatment
Author*Yu-Ren Ye, Jer-Chyi Wang, Chao-Sung Lai (Chang Gung Univ., Taiwan)
Pagepp. 165 - 166

S9-4 (Time: 16:35 - 16:55)
TitleResistive Memory Effect of Nano Particle Utilizing Ferritin Protein
Author*Mutsunori Uenuma, Kentaro Kawano, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST, Japan)
Pagepp. 167 - 168