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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S4  Process and Characterization (I)
Time: 14:30 - 15:30 Thursday, January 20, 2011
Chairs: Hiroshi Nohira (Tokyo City Univ., Japan), Yoshihiro Sugita (Fujitsu, Japan)

S4-1 (Time: 14:30 - 14:50)
TitleDirect-contact Higher-k HfO2 Gate Stacks by Oxygen-controlled Cap-PDA Technique
Author*Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota (AIST, Japan)
Pagepp. 23 - 24

S4-2 (Time: 14:50 - 15:10)
TitleXPS Study of Interfacial Reaction between Metal and Ge Oxide
Author*Akio Ohta, Tomohiro Fujioka, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 25 - 26

S4-3 (Time: 15:10 - 15:30)
TitleInfluence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma
Author*Kusumandari, Wakana Takeuchi, Kimihiko Kato, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 27 - 28