2023 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*". Time zone is JST (=UTC+9:00)

Author Index: HERE

Session Schedule

Monday, October 23, 2023

Registration
12:00 -

Opening Remarks
13:00 - 13:10

K Keynote Address
13:10 - 14:50

Break
14:50 - 15:10

S1 Invited Session
15:10 - 17:10

Banquet
18:00 - 20:00

Tuesday, October 24, 2023

S2 Ferroelectrics and Memory
9:00 - 10:00

Break
10:00 - 10:20

S3 Hf-based Ferroelectrics
10:20 - 11:35

Lunch Break
11:35 - 13:00

FA AI and Functional Films
13:00 - 14:15

Break
14:15 - 14:35

S4 Channel Engineering
14:35 - 15:35

Break
15:35 - 15:55

S5 Characterization 1
15:55 - 16:55

Break
16:55 - 17:15

P Poster Session
17:15 - 18:45

Wednesday, October 25, 2023

S6 Widegap and SiC MOS
9:30 - 11:30

Lunch Break
11:30 - 13:00

S7 Characterization 2
13:00 - 14:00

Break
14:00 - 14:20

FB h-BN and 2D Dielectrics
14:20 - 15:35

Closing Remarks/Award Ceremony
15:35 - 16:00

List of papers

Remark: The presenter of each paper is marked with "*". Time zone is JST (=UTC+9:00)

Monday, October 23, 2023

[To Session Table]

Session K Keynote Address
Time: 13:10 - 14:50, Monday, October 23, 2023
Chairs: Eisuke Tokumitsu (JAIST, Japan), Shinji Migita (AIST, Japan)

K-1 (Time: 13:10 - 14:00)

Title	(Keynote Address) Oxide Semiconductor : Fundamentals and Progress
Author	Hideo Hosono (Tokyo Inst. of Tech./NIMS, Japan)
Page	pp. 1 - 2

K-2 (Time: 14:00 - 14:50)

Title	(Keynote Address) Temporal Kernels for Reservoir Computing Using Memristors
Author	Yoon Ho Jang, Sung Keun Shim, *Cheol Seong Hwang (Seoul National Univ., Republic of Korea)
Page	pp. 3 - 4

[To Session Table]

Session S1 Invited Session
Time: 15:10 - 17:10, Monday, October 23, 2023
Chairs: Yuichiro Mitani (Tokyo Metropolitan Univ., Japan), Kenji Okada (Rapidus, Japan)

S1-1 (Time: 15:10 - 15:40)

Title	(Invited Paper) Physics and Performance Improvement of SiC MOSFETs
Author	*Tsunenobu Kimoto, Keita Tachiki, Kyota Mikami, Xilun Chi, Mitsuaki Kaneko (Kyoto Univ., Japan)
Page	pp. 5 - 6

S1-2 (Time: 15:40 - 16:10)

Title	(Invited Paper) Stabilization and Identification of Ferroelectric HfO₂ Thin Films
Author	*Hiroshi Funakubo, Yuma Takahashi, Takahisa Shiraishi, Masanori Kodera, Reijiro Shimura (Tokyo Inst. of Tech., Japan), Takanori Mimura (Gakushuin Univ., Japan), Keisuke Ishihama, Kazuki Okamoto (Tokyo Inst. of Tech., Japan), Hiroki Moriwake, Ayako Taguchi (JFCC, Japan), Takao Shimizu (NIMS, Japan), Yasuhiro Fujii, Akitoshi Koreeda (Ritsumeikan Univ., Japan)
Page	pp. 7 - 8

S1-3 (Time: 16:10 - 16:40)

Title	(Invited Paper) First Demonstration of Full Integration and Characterization of 4F² 1S1M Cells with 45 nm of Pitch and 20 nm of MTJ Size
Author	*Hisanori Aikawa (KIOXIA Korea, Republic of Korea), Soo Man Seo (SK hynix, Republic of Korea), Soo Gil Kim, Toshihiko Nagase, Yuich Ito (KIOXIA Korea, Republic of Korea), Tae Jung Ha (SK hynix, Republic of Korea), Kenichi Yoshino (KIOXIA Korea, Republic of Korea), Bo Kyung Jung (SK hynix, Republic of Korea), Tadaaki Oikawa (KIOXIA Korea, Republic of Korea), Ku Youl Jung, Hyun In Moon, Bum Su Kim (SK hynix, Republic of Korea), Fumiyoshi Matsuoka, Kosuke Hatsuda, Katsuhiko Hoya (KIOXIA, Japan), Seiyon Kim, Sung-Hoon Lee, Myung-Hee Na, Seon Yong Cha (SK hynix, Republic of Korea)
Page	pp. 9 - 10

S1-4 (Time: 16:40 - 17:10)

Title	(Invited Paper) UV Nanoimprint Lithography on Combined Drops of Inkjet Resist
Author	*Toshiki Ito, Jumpei Shirono, Hinako Matsushima, Hideki Imamura (Canon, Japan), Timothy Stachowiak, Weijun Liu (Canon Nanotechnologies, USA)
Page	pp. 11 - 12

Tuesday, October 24, 2023

[To Session Table]

Session S2 Ferroelectrics and Memory
Time: 9:00 - 10:00, Tuesday, October 24, 2023
Chairs: Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Jun Okuno (Sony Semiconductor Solutions, Japan)

S2-1 (Time: 9:00 - 9:15)

Title	Charge Trapping Characterization of Antiferroelectric ZrO₂ Thin Films with CF₄ Plasma Treatment for Highly-Reliable Energy Storage Applications
Author	*Jing-En Lin, Yu-Hua Liu, Jer-Chyi Wang (Chang-Gung Univ., Taiwan)
Page	pp. 13 - 14

S2-2 (Time: 9:15 - 9:30)

Title	Thickness-dependent Strain Measurement of Ferroelectric AlScN Films
Author	*Yukimura Tokita, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)
Page	pp. 15 - 16

S2-3 (Time: 9:30 - 9:45)

Title	Observation of Metal/Al₂O₃/SnO_x/SiO₂/Si Interface Dipole Modulation Using New Material SnO_x
Author	*Yoshiharu Kirihara, Shunichi Ito, Kota Miura, Sorato Mikawa, Tomoki Yoshida (Tokyo City Univ., Japan), Akira Yasui (JASRI, Japan), Ryousuke Ishikawa, Hiroshi Nohira (Tokyo City Univ., Japan)
Page	pp. 17 - 18

S2-4 (Time: 9:45 - 10:00)

Title	Reliability Impact of Potassium-ion Electrets due to Carbon Contamination during Charging Process
Author	*Taiki Kirikoshi, Masaki Araidai (Nagoya Univ., Japan), Takuma Ishiguro, Hiroyuki Mitsuya (Saginomiya Seisakusho, Japan), Hiroshi Toshiyoshi (Univ. of Tokyo, Japan), Yasushi Shibata, Gen Hashiguchi (Shizuoka Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan)
Page	pp. 19 - 20

[To Session Table]

Session S3 Hf-based Ferroelectrics
Time: 10:20 - 11:35, Tuesday, October 24, 2023
Chairs: Changhwan Choi (Hanyang Univ.), Reika Ichihara (KIOXIA, Japan)

S3-1 (Time: 10:20 - 10:50)

Title	(Invited Paper) Negative Capacitance-Charge Trap Flash Memory for Compute-In-Memory Application
Author	*Sanghun Jeon, Taeho Kim, Giuk Kim (KAIST, Republic of Korea)
Page	p. 21

S3-2 (Time: 10:50 - 11:05)

Title	Orientation Control of {100}-oriented Epitaxial Y-doped HfO₂ Thin Films Using Lattice Matching
Author	*Yoshiki Maekawa, Koji Hirai, Kazuki Okamoto (Tokyo Inst. of Tech., Japan), Takao Shimizu (NIMS, Japan), Hiroshi Funakubo (Tokyo Inst. of Tech., Japan)
Page	pp. 23 - 24

S3-3 (Time: 11:05 - 11:20)

Title	Origin of Fatigue Properties Induced by Oxygen Vacancies Originating from Ferroelectric-Hf_xZr_1−xO₂/TiN Interface Reaction During Field Cycling
Author	*Takashi Onaya (Univ. of Tokyo/NIMS, Japan), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita, Kazuhito Tsukagoshi (NIMS, Japan), Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 25 - 26

S3-4 (Time: 11:20 - 11:35)

Title	Changes of Crystalline Phase in HfZr-oxide Due to Ni Electrode Formation
Author	*Yunosuke Sano (Nagoya Univ., Japan), Noriyuki Taoka (Aichi Inst. of Tech., Japan), Akio Ohta (Fukuoka Univ., Japan), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 27 - 28

[To Session Table]

Session FA AI and Functional Films
Time: 13:00 - 14:15, Tuesday, October 24, 2023
Chairs: Yao-Jen Lee (National Yang Ming Chiao Tung Univ.), Keisuke Yamamoto (Kyushu Univ., Japan)

FA-1 (Time: 13:00 - 13:30)

Title	(Invited Paper) Neuromorphic Information Processing Using Oxide Heterostructures and Protons
Author	*Takeaki Yajima, Satya Prakash Pati (Kyushu Univ., Japan)
Page	pp. 29 - 30

FA-2 (Time: 13:30 - 14:00)

Title	(Invited Paper) Integration of Ferroelectric Devices for Advanced in-Memory Computing Concepts
Author	*Konrad Seidel, David Lehninger, Ayse Sünbül, Raik Hoffmann, Ricardo Revello, Nandakishor Yadav, Thomas Kämpfe, Maximilian Lederer (Fraunhofer IPMS, Germany)
Page	pp. 31 - 32

FA-3 (Time: 14:00 - 14:15)

Title	Implementation of Pavlovian Conditioning with Miniaturized TiO_2-x Four-terminal Planar Memristors
Author	*Ryohei Yamamoto, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai (Osaka Univ., Japan)
Page	pp. 33 - 34

[To Session Table]

Session S4 Channel Engineering
Time: 14:35 - 15:35, Tuesday, October 24, 2023
Chairs: Motoyuki Sato (Tokyo Electron, Japan), Takaaki Miyasako (Murata Manufacturing, Japan)

S4-1 (Time: 14:35 - 15:05)

Title	(Invited Paper) Atomic Layer Deposited Oxide Semiconductor as a New Channel Material for BEOL FET Application: Potential & Prospect
Author	Yoon-Seo Kim, Dong-Gyu Kim, *Jin-Seong Park (Hanyang Univ.)
Page	pp. 35 - 36

S4-2 (Time: 15:05 - 15:20)

Title	Is Just One Monolayer WSe₂ Necessary for the Next Generation LSI?
Author	*Junjie Chen, Kenji Shiraishi (Nagoya Univ., Japan)
Page	pp. 37 - 38

S4-3 (Time: 15:20 - 15:35)

Title	Fabrication and Electrical Characterization of Ge-on-Insulator based on Ge-on-Nothing Technology
Author	*Keisuke Yamamoto, Dong Wang (Kyushu Univ., Japan), Roger Loo, Clément Porret (imec, Belgium), Jinyoun Cho, Kristof Dessein (Umicore, Belgium), Valérie Depauw (imec, Belgium)
Page	pp. 39 - 40

[To Session Table]

Session S5 Characterization 1
Time: 15:55 - 16:55, Tuesday, October 24, 2023
Chairs: Takanobu Watanabe (Waseda Univ., Japan), Noriyuki Taoka (Aichi Inst. of Tech., Japan)

S5-1 (Time: 15:55 - 16:10)

Title	Organic Molecule-Induced Photosensor Enhancement in MoS₂ Field-Effect Transistor
Author	*Md Iftekharul Alam (Hiroshima Univ., Japan), Tsuyoshi Takaoka (Tohoku Univ., Japan), Atsushi Ando (AIST, Japan), Tadahiro Komeda (Tohoku Univ., Japan), Akinobu Teramoto (Hiroshima Univ., Japan)
Page	pp. 41 - 42

S5-2 (Time: 16:10 - 16:25)

Title	First-Principles Study on Barrier Height of Silicon Emission from Interface into Oxide during Silicon Thermal Oxidation
Author	*Hiroyuki Kageshima (Shimane Univ., Japan), Toru Akiyama (Mie Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan)
Page	pp. 43 - 44

S5-3 (Time: 16:25 - 16:40)

Title	Larger Single Lorentzian Noise Deviated from 1/f Characteristic Detected by the Power Spectral Density Integrated Method
Author	*Yoshiki Murayama, Masato Kijima, Takehiko Yamashita, Yuusuke Takezaki, Masanori Miyata, Ryuuta Isobe (Nisshinbo Micro Devices, Japan), Hirobumi Watanabe (W. T. C., Japan)
Page	pp. 45 - 46

S5-4 (Time: 16:40 - 16:55)

Title	Inspecting Dopant Concentration in Source/drain Region in GAA by Nonlinear Optics
Author	*Kuang Yao Lo, Ting-Yu Yen, Long-Fu Song (National Cheng Kung Univ., Taiwan), Kung-Ming Hung (National Kaohsiung Univ. of Science and Tech., Taiwan)
Page	pp. 47 - 48

[To Session Table]

Session P Poster Session
Time: 17:15 - 18:45, Tuesday, October 24, 2023
Chairs: Tomoyuki Suwa (Tohoku Univ., Japan), Takaaki Miyasako (Murata Manufacturing, Japan)

P-1

Title	Theoretical Study on Island Edges in CVD Growth of hBN
Author	*Ryo Imamura, Hiroyuki Kageshima (Shimane Univ., Japan)
Page	pp. 49 - 50

P-2

Title	Evaluation of Hexagonal Boron Nitride Single Crystals for the Application in 2D Materials Science
Author	*Momoko Onodera (Univ. of Tokyo, Japan), Kenji Watanabe (NIMS, Japan), Miyako Isayama (Univ. of Tokyo, Japan), Takashi Taniguchi (NIMS, Japan), Tomoki Machida (Univ. of Tokyo, Japan)
Page	pp. 51 - 52

P-3

Title	Transferable High-k/Boron Nitride Gate Dielectric for Two-Dimensional Field-Effect Transistors
Author	*Eui Young Jung, Pablo Solís-Fernández, Keisuke Yamamoto, Hiroki Ago (Kyushu Univ., Japan)
Page	pp. 53 - 54

P-4

Title	Impact of Hydrogen and Nitrogen Impurities in Fe/MgO Structures on the Interfacial Perpendicular Magnetic Anisotropy of Spin-transfer Torque Magnetic Random-access Memory (STT-MRAM) Devices
Author	*Takuya Nawa (Nagoya Univ., Japan), Yosuke Harashima (NAIST, Japan), Masaaki Araidai (Nagoya Univ., Japan), Tetsuo Endoh (Tohoku Univ., Japan), Keisuke Morishita, Yutaro Ogawa, Kenji Shiraishi (Nagoya Univ., Japan)
Page	pp. 55 - 56

P-5

Title	Microstructure Control of Molybdenum Disulfide Thin Film by Atomic Layer Deposition with Mo Precursor Surface Adsorption Control
Author	*Soomin Yoo, Hanseok Jeong, Woojin Jeon (Kyung Hee Univ., Republic of Korea)
Page	pp. 57 - 58

P-6

Title	E-mode IGO TFT by Co-optimizing In:Ga and Ar:O₂ Ratio during Sputtering
Author	*Yuxuan Li, Kuo Zhang, Jiayi Wang, Nannan You, Yang Xu, Ziheng Bai, Zhicheng Wu, Guanhua Yang, Ling Li, Shengkai Wang (Chinese Academy of Sciences, China)
Page	pp. 59 - 60

P-7

Title	RF Magnetron Sputtered CuO-Cu₂O Complex Thin Films and Its Applications to Resistive Random-Access Memory
Author	*Yung-Lin Hsien, Yu-Heng Xia, Zhi-Xiang Chen, Chi-Da Yang, Yu-Hung Chen (National Kaohsiung Univ. of Science and Tech., Taiwan)
Page	pp. 61 - 62

P-8

Title	Crystal Quality of MoTe₂ Monolayer Fabricated by Gold-Mediated Exfoliation and Its Electrical Properties
Author	*Rikuto Yamamura (Tokyo City Univ., Japan), Kenji Watanabe, Takashi Taniguchi (NIMS, Japan), Yusuke Hoshi (Tokyo City Univ., Japan)
Page	pp. 63 - 64

P-9

Title	(Withdrawn) ~~Design Principles of Nonlinear Optical Materials for Terahertz lasers~~
Author	*Zhou Li (Univ. of Chinese Academy of Science, China)
Page	pp. 65 - 66

P-10

Title	Milk Tea Color Perovskite Solar Cells Fabricated Through a Multilayer Film Design
Author	*Yu-Hung Chen (National Kaohsiung Univ. of Science and Tech., Taiwan), Ching-Chuan Chou (Minghsin Univ. of Science and Tech., Taiwan)
Page	pp. 67 - 68

P-11

Title	Depassivation of Fluorine in Silicon Nitride Films by Hydrogen Radical Treatment
Author	*Takumi Kobayashi, Haruto Omata (Tokyo City Univ., Japan), Kiyokazu Nakagawa (Tokyo City Univ./Abit Technologies, Japan), Yuichiro Mitani (Tokyo City Univ., Japan)
Page	pp. 69 - 70

P-12

Title	Degradation on nMOSFET and Interface Trap Creation under Channel Hot Carrier Stressing at Cryogenic Temperature
Author	*Tatsuya Suzuki, Yohei Miyaki, Yuichiro Mitani (Tokyo City Univ., Japan)
Page	pp. 71 - 72

P-13

Title	Deposition of Perovskite Oxide Thin Films on Self-oriented LaNiO₃ Layer
Author	*Takeshi Kawae, Kyosuke Nakamura, Rintaro Ashihara (Kanazawa Univ., Japan), Masami Kawahara (Kojundo Chemical Lab., Japan)
Page	pp. 73 - 74

P-14

Title	Visualization of Oxygen Vacancies at CeO_x/Y-HZO Interface by Spectrum Imaging Method and Multivariate Analysis
Author	*Koichi Higashimine, Mizuho Saito, Mohit, Eisuke Tokumitsu (JAIST, Japan)
Page	pp. 75 - 76

P-15

Title	(Withdrawn) ~~Morphology Engineering in Mo-Hf_0.5Zr_0.5O₂-Mo Metal-ferroelectric-metal Capacitor with N₂ + H₂ Gas Pre-treatment~~
Author	*Seungyeon Kim, Donghee Han, Woojin Jeon (Kyung Hee Univ., Republic of Korea)
Page	pp. 77 - 78

P-16

Title	Nonferroelectric-to-Ferroelectric Transformation on Hf_0.5Zr_0.5O₂ Thin Films by First Electric Field Stimulus
Author	*Yukinori Morita (AIST, Japan), Takashi Onaya (Univ. of Tokyo, Japan), Shutaro Asanuma, Hiroyuki Ota, Shinji Migita (AIST, Japan)
Page	pp. 79 - 80

P-17

Title	Effect of Bottom Electrode and Buffer Layer on Ferroelectric Properites of Y-doped Hf-Zr-O Films Prepared by Chemical Solution Deposition
Author	Mizuki Saito, Mohit, *Eisuke Tokumitsu (JAIST, Japan)
Page	pp. 81 - 82

P-18

Title	Evaluation of the Effect of Plasma Oxidation and Nitriding on AlScN by AR-HAXPES
Author	*Tomoya Tsutsumi, Kazuki Goshima, Yoshiharu Kirihara, Tatsuki Okazaki (Tokyo City Univ., Japan), Akira Yasui (JASRI, Japan), Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Yuichiro Mitani, Hiroshi Nohira (Tokyo City Univ., Japan)
Page	pp. 83 - 84

P-19

Title	Estimation of the Band Alignment at the Metal/AlScN Interface by AR-HAXPES
Author	*Gen Nakada, Yoshiharu Kirihara (Tokyo City Univ., Japan), Akira Yasui (JASRI, Japan), Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Hiroshi Nohira (Tokyo City Univ., Japan)
Page	pp. 85 - 86

P-20

Title	The Effect of Kr/N₂ - Plasma Sputtering on Ferroelectric HfN Formation
Author	*Yuki Sekiguchi, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan)
Page	pp. 87 - 88

P-21

Title	Impact of Plasma Nitridation on Resistive Switching in AlScN Ferroelectric Tunnel Junction Memory
Author	*Kazuki Goshima, Tatsuki Okazaki, Yoshiharu Kirihara, Tomoya Tsutsumi (Tokyo City Univ., Japan), Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Hiroshi Nohira, Yuichiro Mitani (Tokyo City Univ., Japan)
Page	pp. 89 - 90

P-22

Title	Utilizing High-Pressure Microwave Plasma Oxidation for Advanced SiC MOS
Author	*Nannan You, Qian Zhang, Jiayi Wang, Yang Xu, Kuo Zhang, Yuxuan Li, Shengkai Wang (Chinese Academy of Sciences, China)
Page	pp. 91 - 92

P-23

Title	Reaction of NO Molecule at 4H-SiC/SiO₂ Interface and Its Orientation Dependence: A First-Principles Study
Author	*Toru Akiyama (Mie Univ., Japan), Hiroyuki Kageshima (Shimane Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan)
Page	pp. 93 - 94

P-24

Title	Quantitative Analysis of Incorporation Behavior of In, Ga, and Zn in In-rich IGZO Thin Films According to Sub-cycle Sequence during Thermal Atomic Layer Deposition
Author	*Hanseok Jeong, Soo Min Yoo (Kyung Hee Univ., Republic of Korea), Minki Choe, In-Hwan Baek (Inha Univ., Republic of Korea), Woojin Jeon (Kyung Hee Univ., Republic of Korea)
Page	pp. 95 - 96

P-25

Title	Analysis of Low-energy Localized Phonon Modes of Group-IV Alloys by Molecular Dynamics Simulation
Author	*Daisuke Namiki, Md Mehdee Hasan Mahfuz, Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 97 - 98

P-26

Title	Molecular Dynamics Simulation of Nano-scale Phase Change Material Surrounded by SiO₂
Author	*Yusuke Nishimura, Md Mehdee Hasan Mahfuz, Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 99 - 100

P-27

Title	Training Dependency of Neural Network Interatomic Potential for Molecular Dynamics Simulation of Ru-Si-O Mixed System
Author	*Shuichiro Hashimoto, Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 101 - 102

P-28

Title	Enhancing Electrical Properties in DRAM Insulators via Nb₂O₅ : Mitigating Interface Effects for Improved Performance
Author	*YoungUk Ryu (Kyung Hee Univ., Republic of Korea), Sung Woo Ahn, Jin-Sik Kim, Hyun-Kyu Ryu (R&D Team, UP Chemical, Republic of Korea), Woojin Jeon (Kyung Hee Univ., Republic of Korea)
Page	pp. 103 - 104

P-29

Title	Interpretable Structure-Property Correlation in X-Ray Diffraction Patterns via Machine Learning
Author	*Lei Feng (Tokyo Electron Technology Solutions, Japan), Takahiro Nakamura (Tokyo Electron, Japan), Zeyuan Ni (Tokyo Electron Technology Solutions, Japan)
Page	pp. 105 - 106

P-30

Title	Evaluation of Electronic States of β-Ga₂O₃ Surface by Photoemission Spectroscopy
Author	*Akio Ohta (Fukuoka Univ., Japan), Noriyuki Taoka (Aichi Inst. of Tech., Japan), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 107 - 108

Wednesday, October 25, 2023

[To Session Table]

Session S6 Widegap and SiC MOS
Time: 9:30 - 11:30, Wednesday, October 25, 2023
Chairs: Toru Akiyama (Mie Univ., Japan), Mitsuru Sometani (AIST, Japan)

S6-1

Title	Improvement of Characteristics for n-GaN/Al₂O₃/Pt Capacitor with the GaN Surface Modified by the Dummy SiO₂ Process
Author	*Toshihide Nabatame, Yoshihiro Irokawa, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Yasuo Koide, Kazuhito Tsukagoshi (NIMS, Japan)
Page	pp. 109 - 110

S6-2

Title	Threshold Voltage Modulation of AlGaN/GaN Devices via Vacuum Level Step Control Using Thin Oxide Interlayers
Author	*Yuchen Deng, Jieensi Gelan, Kazuya Uryu, Toshi-kazu Suzuki (JAIST, Japan)
Page	pp. 111 - 112

S6-3

Title	Comparative Study on Local Lattice Distortion of 4H-SiC Surface Induced by Thermal Oxidation and Annealing in Ar Ambient
Author	*Chuyang Lyu, Takashi Onaya, Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 113 - 114

S6-4

Title	Characterizations of Nitrogen Profiles and Interface Properties in NO-nitrided SiO₂/SiC(0-33-8) Structures
Author	*Hayato Iwamoto, Takato Nakanuma (Osaka Univ., Japan), Hirohisa Hirai (AIST, Japan), Mitsuru Sometani (Osaka Univ./AIST, Japan), Mitsuo Okamoto (AIST, Japan), Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 115 - 116

S6-5

Title	Structural Analysis of Boron Incorporated SiO₂/4H-SiC MOS Interface with Reduced Trap Density
Author	*Runze Wang (Univ. of Tokyo, Japan), Munetaka Noguchi, Shiro Hino (Mitsubishi Electric, Japan), Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 117 - 118

S6-6

Title	Possible Origins of Mechanical Stress-Induced Anomalous Impact on Threshold Voltage of 4H-SiC (0001) MOSFET
Author	*Qiao Chu (Univ. of Tokyo, Japan), Masahiro Masunaga, Akio Shima (Hitachi Research & Development Group, Japan), Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 119 - 120

S6-7

Title	Effect of Oxygen Partial Pressure on Nitridation Kinetics at 4H-SiC/SiO₂ Interface Using NO Annealing
Author	*Ryu Sasaki, Takashi Onaya, Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 121 - 122

S6-8

Title	Improvement of Channel Resistance at SiC/SiO₂ with Atomic-scale Steps by NO Annealing
Author	*Nahoto Funaki, Kazuma Yokota, Mitsuharu Uemoto (Kobe Univ., Japan), Takuji Hosoi (Kwansei Gakuin Univ., Japan), Tomoya Ono (Kobe Univ., Japan)
Page	pp. 123 - 124

[To Session Table]

Session S7 Characterization 2
Time: 13:00 - 14:00, Wednesday, October 25, 2023
Chairs: Hiroyuki Kageshima (Shimane Univ., Japan), Keisuke Yamamoto (Kyushu Univ., Japan)

S7-1 (Time: 13:00 - 13:15)

Title	Determinig Factor of Thermal Boundary Resistance at Hetero-interfaces of Amorphous Oxides: A Molecular Dynamics Study
Author	*Rukuto Watanabe, Md Mehdee Hasan Mahfuz, Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 125 - 126

S7-2 (Time: 13:15 - 13:30)

Title	Photoexcitation Effect on Excess Minority Carrier Recombination at SiO₂/n-Si(001) Interface during Si Dry Oxidation
Author	*Yasutaka Tsuda, Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shuichi Ogawa (Nihon Univ., Japan), Yuji Takakuwa (Tohoku Univ., Japan)
Page	pp. 127 - 128

S7-3 (Time: 13:30 - 13:45)

Title	Sputtering Heteroepitaxy of Ge_0.75Sn_0.25 Layer on InP(001) Substrate
Author	*Taichi Kabeya, Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka (Nagoya Univ., Japan)
Page	pp. 129 - 130

S7-4 (Time: 13:45 - 14:00)

Title	Low Temperature (~210 °C) Fabrication of Ge MOS Capacitor using Plasma Oxidation and Oxi-Nitridation for the Interlayer Formation
Author	*Hajime Kuwazuru, Dong Wang, Keisuke Yamamoto (Kyushu Univ., Japan)
Page	pp. 131 - 132

[To Session Table]

Session FB h-BN and 2D Dielectrics
Time: 14:20 - 15:35, Wednesday, October 25, 2023
Chairs: Hiroyuki Kageshima (Shimane Univ., Japan), Tomoyuki Suwa (Tohoku Univ., Japan)

FB-1 (Time: 14:20 - 14:50)

Title	(Invited Paper) Wafer-scale Synthesis and Applications of Multilayer Hexagonal Boron Nitride
Author	*Hiroki Ago (Kyushu Univ., Japan)
Page	pp. 133 - 134

FB-2 (Time: 14:50 - 15:20)

Title	(Invited Paper) Carrier Transport in van der Waals Junctions of h-BN and Two-dimensional Materials
Author	*Tomoki Machida (Univ. of Tokyo, Japan)
Page	pp. 135 - 136

FB-3 (Time: 15:20 - 15:35)

Title	Fabrication of Monolyer h-BN/LaB₆ Thin Film Heterostructure Using Thermally Aggregation Method and Its Evaluation
Author	*Katsumi Nagaoka, Takashi Aizawa (NIMS, Japan), Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan)
Page	pp. 137 - 138

2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY Technical Program

Session Schedule

List of papers

2023 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program