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Monday, November 2, 2015 |
Title | (Keynote Address) High Performance NEMS Devices for Emerging Sensing Embedded Applications and Integration in CMOS Devices |
Author | *Thomas Ernst (CEA Leti, France) |
Page | pp. 1 - 4 |
Title | (Invited Paper) Preparation of Fluorite-Structured Ferroelectric Thin Films and Their Characterization |
Author | *Takao Shimizu, Kiriha Katayama, Tatsuhiko Yokouchi, Takahiro Oikawa (Tokyo Inst. of Tech., Japan), Takahisa Shiraishi, Taknori Kiguchi, Toyohiko Konno (Tohoku Univ., Japan), Hiroshi Uchida, Hiroshi Funakubo (Sophia Univ., Japan) |
Page | pp. 5 - 6 |
Title | Ferroelectric Properties of Non-Doped Thin HfO2 Films |
Author | *Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo, Japan), Shinji Migita (Advanced Industrial Science and Technology, Japan), Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 7 - 8 |
Title | Consideration on the Origin of Dipole Layer Formation at Chemically Reactive and Non-Reactive Oxide/SiO2 Interfaces |
Author | *Jiayang Fei, Koji Kita (Univ. of Tokyo, Japan) |
Page | pp. 9 - 10 |
Title | (Special Lecture) Technical Advancements and Scientific Impacts of HfO2 Gate Stacks |
Author | *Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 11 - 12 |
Title | Molecular Dynamics Study on Dipole Layer Formation at MgxAlyOx+1.5y/SiO2 Interfaces |
Author | *Ryota Kunugi, Kosuke Shimura, Takanobu Watanabe (Waseda Univ., Japan) |
Page | pp. 13 - 14 |
Title | New High-Temperature Instability of ALD-Al2O3 MIS Capacitors |
Author | *Daisuke Matsumura (Waseda Univ., Japan), Atsushi Hiraiwa (Waseda.Univ., Japan), Hiroshi Kawarada (Waseda Univ., Japan) |
Page | pp. 15 - 16 |
Title | Self-Aligned Fin-Shaped Tunnel FET without Space between Gate and Source/Drain and Using i-line Photolithograph |
Author | C.-C. Cheng, C. Liu, P.-G. Chen, K.-Y. Chu, M.-J. Xie, S.-N. Liu, J.-W. Lee, S.-J. Huang (National Taiwan Normal Univ., Taiwan), M.-H. Liao (National Taiwan Univ., Taiwan), *M. H. Lee (National Taiwan Normal Univ., Taiwan) |
Page | pp. 17 - 18 |
Title | Study of Epitaxial La2O3 High-k/Ge(111) Interface by X-ray Photoelectron Spectroscopy |
Author | *Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nohira (Tokyo City Univ., Japan), Masato Zenitaka, Taro Kobayashi, Riku Yamashiro, Shinya Yamada, Kohei Hamaya (Osaka Univ., Japan) |
Page | pp. 19 - 20 |
Title | Low-Temperature Fabrication of a Gate Stack Structure for Ge-Based Spin-MOSFET |
Author | *Yuichi Fujita, Takayasu Oka (Osaka Univ., Japan), Yuta Nagatomi, Keisuke Yamamoto (Kyushu Univ., Japan), Michihiro Yamada (Keio Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Shinya Yamada, Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nakashima (Kyushu Univ., Japan), Kohei Hamaya (Osaka Univ., Japan) |
Page | pp. 21 - 22 |
Title | First Principles Study for Initial Oxidation Process on Ge(100) Surfaces |
Author | Takahiro Mizukoshi, *Masato Oda (Wakayama Univ., Japan) |
Page | pp. 23 - 24 |
Title | High Voltage MOS Transistors with Gradual Junction Profile in Drift Region |
Author | *Jone F. Chen, Teng-Jen Ai, Yen-Lin Tsai (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan) |
Page | pp. 25 - 26 |
Title | Hole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method |
Author | *Sheikh Rashel Al Ahmed, Shin Tanaka, Kiyoteru Kobayashi (Tokai Univ., Japan) |
Page | pp. 27 - 28 |
Title | Analysis of Local Electric Conductive Properties by Electronic Tension Density |
Author | *Hiroo Nozaki, Masato Senami, Kazuhide Ichikawa, Akitomo Tachibana (Kyoto Univ., Japan) |
Page | pp. 29 - 30 |
Title | Dimension Effect on Characteristics and Hot-Carrier Reliability in High Voltage MOSFETs |
Author | *Jone F. Chen, Yu Ming Liu, Yu Hung Chen (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan) |
Page | pp. 31 - 32 |
Title | Length Dependency Expectation of Negative Bias Temperature Instability Degradation |
Author | *Ji-Hoon Seo, Gang-Jun Kim, Donghee Son (POSTECH, Republic of Korea), Nam-Hyun Lee, Youngha Kang (Samsung Electronics, Republic of Korea) |
Page | pp. 33 - 34 |
Title | Formation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots |
Author | *Yusuke Kato, Akio Ohta, Takashi Arai, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
Page | pp. 35 - 36 |
Title | Hard X-Ray Photoelectron Spectroscopic Study of Bottom Electrode Effect on Interface Reaction in Resistive Changing Memory Structure |
Author | *Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow (NIMS, Japan) |
Page | pp. 37 - 38 |
Title | Characteristics of TiO2/Al2O3/TiO2 Capacitors with Plasma-Enhanced ALD RuO2 Bottom Electrode for Future DRAM |
Author | *Tomomi Sawada, Toshihide Nabatame (International Center for Materials Nanoarchitectonics (NIMS), Japan), Ippei Yamamoto (Shibaura Inst. of Tech., Japan), Kazunori Kurishima, Takashi Onaya (Meiji Univ., Japan), Akihiko Ohi (International Center for Materials Nanoarchitectonics (NIMS), Japan), Kazuhiro Ito, Makoto Takahashi, Kazuyuki Kohama (Osaka Univ., Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Atsushi Ogura (Meiji Univ., Japan), Tadaaki Nagao (International Center for Materials Nanoarchitectonics (NIMS), Japan) |
Page | pp. 39 - 40 |
Title | Tailoring the 4H-SiC/SiO2 MOS-Interface for SiC-Based Power Switches |
Author | Aleksey Mikhaylov (St. Petersburg Electrotechnical Univ., Russian Federation), Adolf Schöner (Ascatron AB, Sweden), *Victor Luchinin (St. Petersburg Electrotechnical Univ., Russian Federation), Sergey Reshanov (Ascatron AB, Sweden), Hoger Bartolf, Giovanni Alfieri, Renato Minamisawa (ABB Schweiz AG, Switzerland), Alexey Afanasyev (St. Petersburg Electrotechnical Univ., Russian Federation), Lars Knoll (Ascatron AB, Sweden) |
Page | pp. 41 - 42 |
Title | Investigation of Initial Oxide Growth on GaN Epitaxial Films |
Author | *Takahiro Yamada, Joyo Ito, Ryohei Asahara, Mikito Nozaki (Osaka Univ., Japan), Satoshi Nakazawa, Masahiro Ishida, Tetsuo Ueda (Panasonic, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan) |
Page | pp. 43 - 44 |
Title | Photoemission Study of Thermally-Grown SiO2/4H-SiC Structure. |
Author | *Hiromasa Watanabe, Akio Ohta, Nobuyuki Fujimura, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
Page | pp. 45 - 46 |
Title | Effective Low Cost SiO2 Passivation on Silicon Using Perhydropolysilazane |
Author | *Chihiro Hagiwara, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo collage, Japan) |
Page | pp. 47 - 48 |
Title | Evaluation of SiNPs/SiO2 Composite Structure |
Author | *Hirotomo Demura (National Inst. of Tech., Tokyo College, Japan), Alexander Ulyashin (SINTEF, Norway), Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan) |
Page | pp. 49 - 50 |
Title | Investigate Dielectric Charging Effect of a Capacitive RF-MEMS Switch by FEM Simulation |
Author | Li-Ya Ma, *Norhayati Soin (Univ. of Malaya, Malaysia), Anis Nurashikin Nordin (International Islamic Univ. Malayisa, Malaysia) |
Page | pp. 51 - 52 |
Title | Dielectric Nanoparticle/Liquid Source SiO2 Back Reflector for Solar Cells |
Author | *Takuya Murooka, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan) |
Page | pp. 53 - 54 |
Title | Characterization of Thermoelectric Properties of Amorphous InGaZnO Thin Film |
Author | *Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Science and Tech. (NAIST), Japan) |
Page | pp. 55 - 56 |
Title | Novel Source Follower Transistor Structure without Lightly Doped Drain for High Performance CMOS Image Sensor |
Author | *Hyeong-Sub Song, Sung-Kyu Kwon, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea) |
Page | pp. 57 - 58 |
Title | Oxygen Vacancy formation into Anatase-TiO2 Films by Oxidation of Trimethylaluminium |
Author | *Ippei Yamamoto (Shibaura Inst. of Tech. (SIT), Japan), Toshihide Nabatame (National Institute for Materials Science (NIMS), Japan), Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Kazunori Kurishima (Meiji Univ., Japan), Dao Duy Thang, Tadaaki Nagao, Toyohiro Chikyo (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan), Tomoji Ohishi (SIT, Japan) |
Page | pp. 59 - 60 |
Tuesday, November 3, 2015 |
Title | (Keynote Address) Challenge for Ultra High Density 3D Nonvolatile Memory |
Author | *Hideaki Aochi (Toshiba, Japan) |
Page | pp. 61 - 62 |
Title | (Invited Paper) GexTe1-x/Sb2Te3 Topological Switching Random Access Memory (TRAM) |
Author | *Norikatsu Takaura (Hitachi, Research & Development Group, Center for Technology Innovation- Electronics, Japan) |
Page | pp. 63 - 64 |
Title | Resistive Switching and Memory Effects in BE-Pt/Al2O3/TiO2/Pt-TE and BE-Pt/TiO2/Al2O3/Pt-TE Systems Fabricated by Atomic Layer Deposition |
Author | Liudmila Alekseeva, *Anatoly Petrov, Alexander Romanov (St. Petersburg Electrotechnical Univ., Russian Federation), Toyohiro Chikyow, Toshihide Nabatame (NIMS, Japan), Dmitry Chigirev, Eugeny Osachev (St. Petersburg Electrotechnical Univ., Russian Federation) |
Page | pp. 65 - 66 |
Title | Viable Poly-Si Nanowire Flash Memory Devices with Low Temperature-formed SiO2 Tunneling and Si3N4 Trapping Layers |
Author | *Chia-Hsin Cheng, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Chun-Yuan Chen, Po-Hao Chen, Dong-Yan Li (National Tsing Hua Univ., Taiwan), Chang-Hong Shen, Jia-Min Shieh (National Nano Device Laboratories, Taiwan) |
Page | pp. 67 - 68 |
Title | Metastable Crystalline Hf Oxide with Si Addition as High-k Charge Storage Layer |
Author | *Masao Inoue, Masaharu Mizutani, Masaru Kadoshima, Kenichiro Sonoda, Tomohiro Yamashita, Masazumi Matsuura (Renesas Electronics, Japan) |
Page | pp. 69 - 70 |
Title | (Invited Paper) ALD of Dielectrics for Advanced Channel Materials - Initial Interface Formation - |
Author | Antonio T. Lucero, YoungChul Byun (U. Texas, Dallas, U.S.A.), Jaegil Lee, Lanxia Cheng, *Jiyoung Kim (, U.S.A.) |
Page | pp. 71 - 72 |
Title | Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack |
Author | *Masayuki Kanematsu, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan) |
Page | pp. 73 - 74 |
Title | The Impact of Energy Barrier Height on Border Traps in III-V Gate Stacks |
Author | *Shinichi Yoshida, Satoshi Taniguchi, Hideki Minari (Sony, Japan), Dennis Lin, Tsvetan Ivanov (imec, Belgium), Heiji Watanabe (Osaka Univ., Japan), Masashi Nakazawa (Sony, Japan), Nadine Collaert, Aaron Thean (imec, Belgium) |
Page | pp. 75 - 76 |
Title | (Invited Paper) Ab Initio Investigations for Interface Electronic Structures of SiC-MOS |
Author | *Tomoya Ono, Christopher Kirkham (Univ. of Tsukuba, Japan) |
Page | pp. 77 - 78 |
Title | Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy |
Author | *Yuki Nagae (Nagoya Univ., Japan), Shigehisa Shibayama (Nagoya Univ., Grad. Sch. of Eng., Japan), Masashi Kurosawa, Masaaki Araidai, Mitsuo Sakashita, Osamu Nakatsuka, Kenji Shiraishi, Shigeaki Zaima (Nagoya Univ., Japan) |
Page | pp. 79 - 80 |
Title | (Invited Paper) Characterization and Control of GaN MOS Interfaces for Power Transistor Application |
Author | *Tamotsu Hashizume, Zenji Yatabe (Hokkaido Univ., Japan) |
Page | pp. 81 - 82 |
Title | Novel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs |
Author | *Kunihiro Tsubomi, Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ., Japan) |
Page | pp. 83 - 84 |
Title | Evaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS |
Author | *Nobuyuki Fujimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
Page | pp. 85 - 86 |
Title | Density Profile Simulated for Thermal SiO2 Films on 4H-SiC and the Crystallographic Orientation Dependence |
Author | *Keisuke Bamoto, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan) |
Page | pp. 87 - 88 |
Title | Initial Stage of SiO2/SiC Interface Formation on C-face 4H-SiC |
Author | Tomoya Sasago, Hitoshi Arai, Shunta Yamahori, *Hiroshi Nohira (Tokyo City Univ., Japan) |
Page | pp. 89 - 90 |
Title | Non-uniform Thermal Oxidation of SiC and Electrical Characteristics Properties |
Author | *Ryu Nagai, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan) |
Page | pp. 91 - 92 |
Wednesday, November 4, 2015 |
Title | (Invited Paper) Noise Measurement Application for Nano-Electronic Device Development |
Author | *Kenji Ohmori (Univ. of Tsukuba, Japan) |
Page | pp. 93 - 94 |
Title | Time Dependent Dielectric Breakdown in Nanowire Transistor |
Author | *Kensuke Ota, Chika Tanaka, Toshinori Numata, Daisuke Matsushita, Masumi Saitoh (Toshiba, Japan) |
Page | pp. 95 - 96 |
Title | Rapid Temperature Oxidation at SiO2/Si(001) Interface Studied by Real-Time X-Ray Photoelectron Spectroscopy: Rapid Cooling Versus Rapid Heating |
Author | *Jiayi Tang, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (National Inst. of Tech., Akita College, Japan), Yuji Takakuwa (Tohoku Univ., Japan) |
Page | pp. 97 - 98 |
Title | Extension of Silicon Emission Model for Silicon Pillar Oxidation |
Author | *Hiroyuki Kageshima (Shimane Univ., JST-ACCEL, Japan), Kenji Shiraishi (Nagoya Univ., JST-ACCEL, Japan), Tetsuo Endoh (Tohoku Univ., JST-ACCEL, Japan) |
Page | pp. 99 - 100 |
Title | A New Reactive Force Field for Study on the Formation of SiC/SiO2 Interface |
Author | *Shuichiro Hashimoto, Takanobu Watanabe (Waseda Univ., Japan) |
Page | pp. 101 - 102 |
Title | (Invited Paper) Negative Capacitance Transistors |
Author | Sayeef Salahuddin (UC Berkeley, U.S.A.) |
Page | pp. 103 - 104 |
Title | Ferroelectric Material Engineering in SOI-FETs for Realizing Steep Subthreshold Swing Using Negative Gate Capacitance |
Author | *Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 105 - 106 |
Title | (Invited Paper) ON Current Boosting in Silicon-Based Tunnel FETs Utilizing Isoelectronic Trap Technology |
Author | *Takahiro Mori, Yukinori Morita, Shinji Migita, Koichi Fukuda, Wataru Mizubayashi, Tetsuji Yasuda, Meishoku Masahara, Takashi Matsukawa, Hiroyuki Ota (AIST, Japan), Satoshi Moriyama (NIMS, Japan), Keiji Ono (RIKEN, Japan), Shota Iizuka, Takashi Nakayama (Chiba Univ., Japan) |
Page | pp. 107 - 108 |
Title | (Invited Paper) ATLAS-TFET: Toward Green Transistors and Sensors |
Author | Kaustav Banerjee (UC Santa Barbara, U.S.A.) |
Page | pp. 109 - 112 |
Title | (Invited Paper) Doping and Charge Compensation in Amorphous Oxide Semiconductors |
Author | *Toshio Kamiya, Keisuke Ide, Hideya Kumomi, Hideo Hosono (Tokyo Inst. of Tech., Japan) |
Page | pp. 113 - 114 |
Title | Improvement of Bias Stress Reliability by Carbon-Doping in In-Si-O Channel TFT |
Author | *Kazunori Kurishima (Meiji Univ., Japan), Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Ippei Yamamoto, Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Toyohiro Chikyow (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan) |
Page | pp. 115 - 116 |
Title | Effects of Atomic Hydrogen Annealing on Poly-Ge Thin-Film Transistors |
Author | *Akira Heya, Shota Hirano, Naoto Matsuo (Univ. of Hyogo, Japan) |
Page | pp. 117 - 118 |
Title | Anomalous Electrical Properties of Au/SrTiO3 Interface |
Author | *Lun Xu, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 119 - 120 |
Title | Diamond Dielectric Thin Film Stabilizing Effect on Silicon Carbide Nanostructured Field Emission Array |
Author | *Alexey Ivanov, Vladimir Ilyin, Victor Luchinin (St. Petersburg Electrotechnical Univ., Russian Federation), Valeriy Chernov, Anatoliy Vikharev (Institute of Applied Physics RAS, Russian Federation), Vladimir Golubkov (St. Petersburg Electrotechnical Univ., Russian Federation), Sergey Bogdanov (Institute of Applied Physics RAS, Russian Federation) |
Page | pp. 121 - 122 |
Title | (Invited Paper) Ion Control in an Electronically Insulative Thin Layer for Neuromorphic Applications |
Author | *Tsuyoshi Hasegawa (Waseda Univ., Japan), Ilia Valov (Peter Gruenberg Institute, Germany), Thoru Tsuruoka (NIMS, Japan) |
Page | pp. 123 - 124 |