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2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".
Technical Program:   One Page (Not Separated) version
Author Index:   HERE

Session Schedule


Monday, November 2, 2015

Opening Address
13:00 - 13:10
K1  Keynote 1
13:10 - 14:10
S1  High-k Gate Stack and Materials
14:10 - 15:20
Coffee Break
15:20 - 15:40
L  Special Lecture
15:40 - 16:20
G  Poster Shotgun
16:20 - 16:50
P  Poster Session
16:50 - 18:50

Tuesday, November 3, 2015

K2  Keynote 2
9:00 - 9:40
Break
9:40 - 10:00
S2  Memory Materials and Devices
10:00 - 11:30
Lunch
11:30 - 13:00
S3  Process and Evaluation for New Channel Materials
13:00 - 15:00
Coffee Break
15:00 - 15:20
S4  Power Device and Characterization
15:20 - 17:30
Break
17:30 - 17:45
Banquet
17:45 - 20:00

Wednesday, November 4, 2015

S5  Interface Control and Reliability for Devices
9:00 - 10:50
Break
10:50 - 11:10
S6  Steep Slope FET
11:10 - 12:30
Lunch
12:30 - 14:00
S7  New Channel Materials
14:00 - 15:40
Coffee Break
15:40 - 16:00
S8  Exotic Materials and Devices
16:00 - 17:10
Closing Remarks
17:10 - 17:30


List of papers

Remark: The presenter of each paper is marked with "*".

Monday, November 2, 2015

Session K1  Keynote 1
Time: 13:10 - 14:10 Monday, November 2, 2015
Chairs: Toyohiro Chikyow (NIMS, Japan), Shinji Migita (AIST, Japan)

K1-1 (Time: 13:10 - 14:10)
Title(Keynote Address) High Performance NEMS Devices for Emerging Sensing Embedded Applications and Integration in CMOS Devices
Author*Thomas Ernst (CEA Leti, France)
Pagepp. 1 - 4


Session S1  High-k Gate Stack and Materials
Time: 14:10 - 15:20 Monday, November 2, 2015
Chairs: Toshihide Nabatame (NIMS, Japan), Koji Eriguchi (Kyoto Univ., Japan)

S1-1 (Time: 14:10 - 14:40)
Title(Invited Paper) Preparation of Fluorite-Structured Ferroelectric Thin Films and Their Characterization
Author*Takao Shimizu, Kiriha Katayama, Tatsuhiko Yokouchi, Takahiro Oikawa (Tokyo Inst. of Tech., Japan), Takahisa Shiraishi, Taknori Kiguchi, Toyohiko Konno (Tohoku Univ., Japan), Hiroshi Uchida, Hiroshi Funakubo (Sophia Univ., Japan)
Pagepp. 5 - 6

S1-2 (Time: 14:40 - 15:00)
TitleFerroelectric Properties of Non-Doped Thin HfO2 Films
Author*Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo, Japan), Shinji Migita (Advanced Industrial Science and Technology, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 7 - 8

S1-3 (Time: 15:00 - 15:20)
TitleConsideration on the Origin of Dipole Layer Formation at Chemically Reactive and Non-Reactive Oxide/SiO2 Interfaces
Author*Jiayang Fei, Koji Kita (Univ. of Tokyo, Japan)
Pagepp. 9 - 10


Session L  Special Lecture
Time: 15:40 - 16:20 Monday, November 2, 2015
Chair: Yukiharu Uraoka (NAIST, Japan)

L-1 (Time: 15:40 - 16:20)
Title(Special Lecture) Technical Advancements and Scientific Impacts of HfO2 Gate Stacks
Author*Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 11 - 12


Session G  Poster Shotgun
Time: 16:20 - 16:50 Monday, November 2, 2015
Chair: Shinji Migita (AIST, Japan)


Session P  Poster Session
Time: 16:50 - 18:50 Monday, November 2, 2015
Chair: Shinji Migita (AIST, Japan)

P-1
TitleMolecular Dynamics Study on Dipole Layer Formation at MgxAlyOx+1.5y/SiO2 Interfaces
Author*Ryota Kunugi, Kosuke Shimura, Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 13 - 14

P-2
TitleNew High-Temperature Instability of ALD-Al2O3 MIS Capacitors
Author*Daisuke Matsumura (Waseda Univ., Japan), Atsushi Hiraiwa (Waseda.Univ., Japan), Hiroshi Kawarada (Waseda Univ., Japan)
Pagepp. 15 - 16

P-3
TitleSelf-Aligned Fin-Shaped Tunnel FET without Space between Gate and Source/Drain and Using i-line Photolithograph
AuthorC.-C. Cheng, C. Liu, P.-G. Chen, K.-Y. Chu, M.-J. Xie, S.-N. Liu, J.-W. Lee, S.-J. Huang (National Taiwan Normal Univ., Taiwan), M.-H. Liao (National Taiwan Univ., Taiwan), *M. H. Lee (National Taiwan Normal Univ., Taiwan)
Pagepp. 17 - 18

P-4
TitleStudy of Epitaxial La2O3 High-k/Ge(111) Interface by X-ray Photoelectron Spectroscopy
Author*Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nohira (Tokyo City Univ., Japan), Masato Zenitaka, Taro Kobayashi, Riku Yamashiro, Shinya Yamada, Kohei Hamaya (Osaka Univ., Japan)
Pagepp. 19 - 20

P-5
TitleLow-Temperature Fabrication of a Gate Stack Structure for Ge-Based Spin-MOSFET
Author*Yuichi Fujita, Takayasu Oka (Osaka Univ., Japan), Yuta Nagatomi, Keisuke Yamamoto (Kyushu Univ., Japan), Michihiro Yamada (Keio Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Shinya Yamada, Takeshi Kanashima (Osaka Univ., Japan), Hiroshi Nakashima (Kyushu Univ., Japan), Kohei Hamaya (Osaka Univ., Japan)
Pagepp. 21 - 22

P-6
TitleFirst Principles Study for Initial Oxidation Process on Ge(100) Surfaces
AuthorTakahiro Mizukoshi, *Masato Oda (Wakayama Univ., Japan)
Pagepp. 23 - 24

P-7
TitleHigh Voltage MOS Transistors with Gradual Junction Profile in Drift Region
Author*Jone F. Chen, Teng-Jen Ai, Yen-Lin Tsai (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan)
Pagepp. 25 - 26

P-8
TitleHole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method
Author*Sheikh Rashel Al Ahmed, Shin Tanaka, Kiyoteru Kobayashi (Tokai Univ., Japan)
Pagepp. 27 - 28

P-9
TitleAnalysis of Local Electric Conductive Properties by Electronic Tension Density
Author*Hiroo Nozaki, Masato Senami, Kazuhide Ichikawa, Akitomo Tachibana (Kyoto Univ., Japan)
Pagepp. 29 - 30

P-10
TitleDimension Effect on Characteristics and Hot-Carrier Reliability in High Voltage MOSFETs
Author*Jone F. Chen, Yu Ming Liu, Yu Hung Chen (National Cheng Kung Univ., Taiwan), Hao-Tang Hsu, Chih-Yuan Chen, Hann-Ping Hwang (Powerchip Technology, Taiwan)
Pagepp. 31 - 32

P-11
TitleLength Dependency Expectation of Negative Bias Temperature Instability Degradation
Author*Ji-Hoon Seo, Gang-Jun Kim, Donghee Son (POSTECH, Republic of Korea), Nam-Hyun Lee, Youngha Kang (Samsung Electronics, Republic of Korea)
Pagepp. 33 - 34

P-12
TitleFormation of High Density Ti Nanodots and Evaluation of Resistive Switching Properties of SiOx-ReRAMs with Ti Nanodots
Author*Yusuke Kato, Akio Ohta, Takashi Arai, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 35 - 36

P-13
TitleHard X-Ray Photoelectron Spectroscopic Study of Bottom Electrode Effect on Interface Reaction in Resistive Changing Memory Structure
Author*Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Kazuyoshi Kobashi, Toyohiro Chikyow (NIMS, Japan)
Pagepp. 37 - 38

P-14
TitleCharacteristics of TiO2/Al2O3/TiO2 Capacitors with Plasma-Enhanced ALD RuO2 Bottom Electrode for Future DRAM
Author*Tomomi Sawada, Toshihide Nabatame (International Center for Materials Nanoarchitectonics (NIMS), Japan), Ippei Yamamoto (Shibaura Inst. of Tech., Japan), Kazunori Kurishima, Takashi Onaya (Meiji Univ., Japan), Akihiko Ohi (International Center for Materials Nanoarchitectonics (NIMS), Japan), Kazuhiro Ito, Makoto Takahashi, Kazuyuki Kohama (Osaka Univ., Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Atsushi Ogura (Meiji Univ., Japan), Tadaaki Nagao (International Center for Materials Nanoarchitectonics (NIMS), Japan)
Pagepp. 39 - 40

P-15
TitleTailoring the 4H-SiC/SiO2 MOS-Interface for SiC-Based Power Switches
AuthorAleksey Mikhaylov (St. Petersburg Electrotechnical Univ., Russian Federation), Adolf Schöner (Ascatron AB, Sweden), *Victor Luchinin (St. Petersburg Electrotechnical Univ., Russian Federation), Sergey Reshanov (Ascatron AB, Sweden), Hoger Bartolf, Giovanni Alfieri, Renato Minamisawa (ABB Schweiz AG, Switzerland), Alexey Afanasyev (St. Petersburg Electrotechnical Univ., Russian Federation), Lars Knoll (Ascatron AB, Sweden)
Pagepp. 41 - 42

P-16
TitleInvestigation of Initial Oxide Growth on GaN Epitaxial Films
Author*Takahiro Yamada, Joyo Ito, Ryohei Asahara, Mikito Nozaki (Osaka Univ., Japan), Satoshi Nakazawa, Masahiro Ishida, Tetsuo Ueda (Panasonic, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 43 - 44

P-17
TitlePhotoemission Study of Thermally-Grown SiO2/4H-SiC Structure.
Author*Hiromasa Watanabe, Akio Ohta, Nobuyuki Fujimura, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 45 - 46

P-18
TitleEffective Low Cost SiO2 Passivation on Silicon Using Perhydropolysilazane
Author*Chihiro Hagiwara, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo collage, Japan)
Pagepp. 47 - 48

P-19
TitleEvaluation of SiNPs/SiO2 Composite Structure
Author*Hirotomo Demura (National Inst. of Tech., Tokyo College, Japan), Alexander Ulyashin (SINTEF, Norway), Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan)
Pagepp. 49 - 50

P-20
TitleInvestigate Dielectric Charging Effect of a Capacitive RF-MEMS Switch by FEM Simulation
AuthorLi-Ya Ma, *Norhayati Soin (Univ. of Malaya, Malaysia), Anis Nurashikin Nordin (International Islamic Univ. Malayisa, Malaysia)
Pagepp. 51 - 52

P-21
TitleDielectric Nanoparticle/Liquid Source SiO2 Back Reflector for Solar Cells
Author*Takuya Murooka, Hiroshi Nagayoshi (National Inst. of Tech., Tokyo College, Japan)
Pagepp. 53 - 54

P-22
TitleCharacterization of Thermoelectric Properties of Amorphous InGaZnO Thin Film
Author*Yuta Fujimoto, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Science and Tech. (NAIST), Japan)
Pagepp. 55 - 56

P-23
TitleNovel Source Follower Transistor Structure without Lightly Doped Drain for High Performance CMOS Image Sensor
Author*Hyeong-Sub Song, Sung-Kyu Kwon, Ga-Won Lee, Hi-Deok Lee (Chungnam National Univ., Republic of Korea)
Pagepp. 57 - 58

P-24
TitleOxygen Vacancy formation into Anatase-TiO2 Films by Oxidation of Trimethylaluminium
Author*Ippei Yamamoto (Shibaura Inst. of Tech. (SIT), Japan), Toshihide Nabatame (National Institute for Materials Science (NIMS), Japan), Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Kazunori Kurishima (Meiji Univ., Japan), Dao Duy Thang, Tadaaki Nagao, Toyohiro Chikyo (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan), Tomoji Ohishi (SIT, Japan)
Pagepp. 59 - 60



Tuesday, November 3, 2015

Session K2  Keynote 2
Time: 9:00 - 9:40 Tuesday, November 3, 2015
Chair: Toyohiro Chikyow (NIMS, Japan)

K2-1 (Time: 9:00 - 9:40)
Title(Keynote Address) Challenge for Ultra High Density 3D Nonvolatile Memory
Author*Hideaki Aochi (Toshiba, Japan)
Pagepp. 61 - 62


Session S2  Memory Materials and Devices
Time: 10:00 - 11:30 Tuesday, November 3, 2015
Chairs: Eisuke Tokumitsu (JAIST, Japan), Koichi Muraoka (Toshiba, Japan)

S2-1 (Time: 10:00 - 10:30)
Title(Invited Paper) GexTe1-x/Sb2Te3 Topological Switching Random Access Memory (TRAM)
Author*Norikatsu Takaura (Hitachi, Research & Development Group, Center for Technology Innovation- Electronics, Japan)
Pagepp. 63 - 64

S2-2 (Time: 10:30 - 10:50)
TitleResistive Switching and Memory Effects in BE-Pt/Al2O3/TiO2/Pt-TE and BE-Pt/TiO2/Al2O3/Pt-TE Systems Fabricated by Atomic Layer Deposition
AuthorLiudmila Alekseeva, *Anatoly Petrov, Alexander Romanov (St. Petersburg Electrotechnical Univ., Russian Federation), Toyohiro Chikyow, Toshihide Nabatame (NIMS, Japan), Dmitry Chigirev, Eugeny Osachev (St. Petersburg Electrotechnical Univ., Russian Federation)
Pagepp. 65 - 66

S2-3 (Time: 10:50 - 11:10)
TitleViable Poly-Si Nanowire Flash Memory Devices with Low Temperature-formed SiO2 Tunneling and Si3N4 Trapping Layers
Author*Chia-Hsin Cheng, Kuei-Shu Chang-Liao, Hsin-Kai Fang, Chun-Yuan Chen, Po-Hao Chen, Dong-Yan Li (National Tsing Hua Univ., Taiwan), Chang-Hong Shen, Jia-Min Shieh (National Nano Device Laboratories, Taiwan)
Pagepp. 67 - 68

S2-4 (Time: 11:10 - 11:30)
TitleMetastable Crystalline Hf Oxide with Si Addition as High-k Charge Storage Layer
Author*Masao Inoue, Masaharu Mizutani, Masaru Kadoshima, Kenichiro Sonoda, Tomohiro Yamashita, Masazumi Matsuura (Renesas Electronics, Japan)
Pagepp. 69 - 70


Session S3  Process and Evaluation for New Channel Materials
Time: 13:00 - 15:00 Tuesday, November 3, 2015
Chairs: Toshihide Nabatame (NIMS, Japan), Jiro Yugami (Hitachi Kokusai Electric, Japan)

S3-1 (Time: 13:00 - 13:30)
Title(Invited Paper) ALD of Dielectrics for Advanced Channel Materials - Initial Interface Formation -
AuthorAntonio T. Lucero, YoungChul Byun (U. Texas, Dallas, U.S.A.), Jaegil Lee, Lanxia Cheng, *Jiyoung Kim (, U.S.A.)
Pagepp. 71 - 72

S3-2 (Time: 13:30 - 13:50)
TitleInfluence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack
Author*Masayuki Kanematsu, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 73 - 74

S3-3 (Time: 13:50 - 14:10)
TitleThe Impact of Energy Barrier Height on Border Traps in III-V Gate Stacks
Author*Shinichi Yoshida, Satoshi Taniguchi, Hideki Minari (Sony, Japan), Dennis Lin, Tsvetan Ivanov (imec, Belgium), Heiji Watanabe (Osaka Univ., Japan), Masashi Nakazawa (Sony, Japan), Nadine Collaert, Aaron Thean (imec, Belgium)
Pagepp. 75 - 76

S3-4 (Time: 14:10 - 14:40)
Title(Invited Paper) Ab Initio Investigations for Interface Electronic Structures of SiC-MOS
Author*Tomoya Ono, Christopher Kirkham (Univ. of Tsukuba, Japan)
Pagepp. 77 - 78

S3-5 (Time: 14:40 - 15:00)
TitleEvaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy
Author*Yuki Nagae (Nagoya Univ., Japan), Shigehisa Shibayama (Nagoya Univ., Grad. Sch. of Eng., Japan), Masashi Kurosawa, Masaaki Araidai, Mitsuo Sakashita, Osamu Nakatsuka, Kenji Shiraishi, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 79 - 80


Session S4  Power Device and Characterization
Time: 15:20 - 17:30 Tuesday, November 3, 2015
Chairs: Heiji Watanabe (Osaka Univ., Japan), Eisuke Tokumitsu (JAIST, Japan)

S4-1 (Time: 15:20 - 15:50)
Title(Invited Paper) Characterization and Control of GaN MOS Interfaces for Power Transistor Application
Author*Tamotsu Hashizume, Zenji Yatabe (Hokkaido Univ., Japan)
Pagepp. 81 - 82

S4-2 (Time: 15:50 - 16:10)
TitleNovel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs
Author*Kunihiro Tsubomi, Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ., Japan)
Pagepp. 83 - 84

S4-3 (Time: 16:10 - 16:30)
TitleEvaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS
Author*Nobuyuki Fujimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 85 - 86

S4-4 (Time: 16:30 - 16:50)
TitleDensity Profile Simulated for Thermal SiO2 Films on 4H-SiC and the Crystallographic Orientation Dependence
Author*Keisuke Bamoto, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Pagepp. 87 - 88

S4-5 (Time: 16:50 - 17:10)
TitleInitial Stage of SiO2/SiC Interface Formation on C-face 4H-SiC
AuthorTomoya Sasago, Hitoshi Arai, Shunta Yamahori, *Hiroshi Nohira (Tokyo City Univ., Japan)
Pagepp. 89 - 90

S4-6 (Time: 17:10 - 17:30)
TitleNon-uniform Thermal Oxidation of SiC and Electrical Characteristics Properties
Author*Ryu Nagai, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Pagepp. 91 - 92



Wednesday, November 4, 2015

Session S5  Interface Control and Reliability for Devices
Time: 9:00 - 10:50 Wednesday, November 4, 2015
Chairs: Masao Inoue (Renesas Electronics, Japan), Kenji Okada (TowerJazz Panasonic Semiconductor, Japan)

S5-1 (Time: 9:00 - 9:30)
Title(Invited Paper) Noise Measurement Application for Nano-Electronic Device Development
Author*Kenji Ohmori (Univ. of Tsukuba, Japan)
Pagepp. 93 - 94

S5-2 (Time: 9:30 - 9:50)
TitleTime Dependent Dielectric Breakdown in Nanowire Transistor
Author*Kensuke Ota, Chika Tanaka, Toshinori Numata, Daisuke Matsushita, Masumi Saitoh (Toshiba, Japan)
Pagepp. 95 - 96

S5-3 (Time: 9:50 - 10:10)
TitleRapid Temperature Oxidation at SiO2/Si(001) Interface Studied by Real-Time X-Ray Photoelectron Spectroscopy: Rapid Cooling Versus Rapid Heating
Author*Jiayi Tang, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (National Inst. of Tech., Akita College, Japan), Yuji Takakuwa (Tohoku Univ., Japan)
Pagepp. 97 - 98

S5-4 (Time: 10:10 - 10:30)
TitleExtension of Silicon Emission Model for Silicon Pillar Oxidation
Author*Hiroyuki Kageshima (Shimane Univ., JST-ACCEL, Japan), Kenji Shiraishi (Nagoya Univ., JST-ACCEL, Japan), Tetsuo Endoh (Tohoku Univ., JST-ACCEL, Japan)
Pagepp. 99 - 100

S5-5 (Time: 10:30 - 10:50)
TitleA New Reactive Force Field for Study on the Formation of SiC/SiO2 Interface
Author*Shuichiro Hashimoto, Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 101 - 102


Session S6  Steep Slope FET
Time: 11:10 - 12:30 Wednesday, November 4, 2015
Chair: Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan)

S6-1 (Time: 11:10 - 11:40)
Title(Invited Paper) Negative Capacitance Transistors
AuthorSayeef Salahuddin (UC Berkeley, U.S.A.)
Pagepp. 103 - 104

S6-2 (Time: 11:40 - 12:00)
TitleFerroelectric Material Engineering in SOI-FETs for Realizing Steep Subthreshold Swing Using Negative Gate Capacitance
Author*Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 105 - 106

S6-3 (Time: 12:00 - 12:30)
Title(Invited Paper) ON Current Boosting in Silicon-Based Tunnel FETs Utilizing Isoelectronic Trap Technology
Author*Takahiro Mori, Yukinori Morita, Shinji Migita, Koichi Fukuda, Wataru Mizubayashi, Tetsuji Yasuda, Meishoku Masahara, Takashi Matsukawa, Hiroyuki Ota (AIST, Japan), Satoshi Moriyama (NIMS, Japan), Keiji Ono (RIKEN, Japan), Shota Iizuka, Takashi Nakayama (Chiba Univ., Japan)
Pagepp. 107 - 108


Session S7  New Channel Materials
Time: 14:00 - 15:40 Wednesday, November 4, 2015
Chairs: Takahiro Mori (AIST, Japan), Osamu Nakatsuka (Nagoya Univ., Japan)

S7-1 (Time: 14:00 - 14:30)
Title(Invited Paper) ATLAS-TFET: Toward Green Transistors and Sensors
AuthorKaustav Banerjee (UC Santa Barbara, U.S.A.)
Pagepp. 109 - 112

S7-2 (Time: 14:30 - 15:00)
Title(Invited Paper) Doping and Charge Compensation in Amorphous Oxide Semiconductors
Author*Toshio Kamiya, Keisuke Ide, Hideya Kumomi, Hideo Hosono (Tokyo Inst. of Tech., Japan)
Pagepp. 113 - 114

S7-3 (Time: 15:00 - 15:20)
TitleImprovement of Bias Stress Reliability by Carbon-Doping in In-Si-O Channel TFT
Author*Kazunori Kurishima (Meiji Univ., Japan), Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi (NIMS, Japan), Ippei Yamamoto, Tomoji Ohishi (Shibaura Inst. of Tech., Japan), Toyohiro Chikyow (NIMS, Japan), Atsushi Ogura (Meiji Univ., Japan)
Pagepp. 115 - 116

S7-4 (Time: 15:20 - 15:40)
TitleEffects of Atomic Hydrogen Annealing on Poly-Ge Thin-Film Transistors
Author*Akira Heya, Shota Hirano, Naoto Matsuo (Univ. of Hyogo, Japan)
Pagepp. 117 - 118


Session S8  Exotic Materials and Devices
Time: 16:00 - 17:10 Wednesday, November 4, 2015
Chair: Mitsuru Takenaka (Univ. of Tokyo, Japan)

S8-1 (Time: 16:00 - 16:20)
TitleAnomalous Electrical Properties of Au/SrTiO3 Interface
Author*Lun Xu, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 119 - 120

S8-2 (Time: 16:20 - 16:40)
TitleDiamond Dielectric Thin Film Stabilizing Effect on Silicon Carbide Nanostructured Field Emission Array
Author*Alexey Ivanov, Vladimir Ilyin, Victor Luchinin (St. Petersburg Electrotechnical Univ., Russian Federation), Valeriy Chernov, Anatoliy Vikharev (Institute of Applied Physics RAS, Russian Federation), Vladimir Golubkov (St. Petersburg Electrotechnical Univ., Russian Federation), Sergey Bogdanov (Institute of Applied Physics RAS, Russian Federation)
Pagepp. 121 - 122

S8-3 (Time: 16:40 - 17:10)
Title(Invited Paper) Ion Control in an Electronically Insulative Thin Layer for Neuromorphic Applications
Author*Tsuyoshi Hasegawa (Waseda Univ., Japan), Ilia Valov (Peter Gruenberg Institute, Germany), Thoru Tsuruoka (NIMS, Japan)
Pagepp. 123 - 124