2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Author Index

Table of Contents:   A  B  C  D  E  F  G  H  I  K  L  M  N  O  P  R  S  T  U  V  W  X  Y  Z  

A

Afanasyev, Alexey (St. Petersburg Electrotechnical Univ.)   p. 41 (P-15)
Ahmed, Sheikh Rashel Al (Tokai Univ.)   p. 27 (P-8)
Ai, Teng-Jen (National Cheng Kung Univ.)   p. 25 (P-7)
Alekseeva, Liudmila (St. Petersburg Electrotechnical Univ.)   p. 65 (S2-2)
Alfieri, Giovanni (ABB Schweiz AG)   p. 41 (P-15)
Aochi, Hideaki (Toshiba)   p. 61 (K2-1)
Arai, Hitoshi (Tokyo City Univ.)   p. 89 (S4-5)
Arai, Takashi (Nagoya Univ.)   p. 35 (P-12)
Araidai, Masaaki (Nagoya Univ.)   p. 79 (S3-5)
Asahara, Ryohei (Osaka Univ.)   p. 43 (P-16)

B

Bamoto, Keisuke (Univ. of Tsukuba)   p. 87 (S4-4)
Banerjee, Kaustav (UC Santa Barbara)   p. 109 (S7-1)
Bartolf, Hoger (ABB Schweiz AG)   p. 41 (P-15)
Bogdanov, Sergey (Institute of Applied Physics RAS)   p. 121 (S8-2)
Byun, YoungChul (U. Texas, Dallas)   p. 71 (S3-1)

C

Chang-Liao, Kuei-Shu (National Tsing Hua Univ.)   p. 67 (S2-3)
Chen, Chih-Yuan (Powerchip Technology)   p. 25 (P-7)
Chen, Chih-Yuan (Powerchip Technology)   p. 31 (P-10)
Chen, Chun-Yuan (National Tsing Hua Univ.)   p. 67 (S2-3)
Chen, Jone F. (National Cheng Kung Univ.)   p. 25 (P-7)
Chen, Jone F. (National Cheng Kung Univ.)   p. 31 (P-10)
Chen, P.-G. (National Taiwan Normal Univ.)   p. 17 (P-3)
Chen, Po-Hao (National Tsing Hua Univ.)   p. 67 (S2-3)
Chen, Yu Hung (National Cheng Kung Univ.)   p. 31 (P-10)
Cheng, C.-C. (National Taiwan Normal Univ.)   p. 17 (P-3)
Cheng, Chia-Hsin (National Tsing Hua Univ.)   p. 67 (S2-3)
Cheng, Lanxia   p. 71 (S3-1)
Chernov, Valeriy (Institute of Applied Physics RAS)   p. 121 (S8-2)
Chigirev, Dmitry (St. Petersburg Electrotechnical Univ.)   p. 65 (S2-2)
Chikyo, Toyohiro (NIMS)   p. 59 (P-24)
Chikyow, Toyohiro (NIMS)   p. 37 (P-13)
Chikyow, Toyohiro (NIMS)   p. 65 (S2-2)
Chikyow, Toyohiro (NIMS)   p. 115 (S7-3)
Chu, K.-Y. (National Taiwan Normal Univ.)   p. 17 (P-3)
Collaert, Nadine (imec)   p. 75 (S3-3)

D

Demura, Hirotomo (National Inst. of Tech., Tokyo College)   p. 49 (P-19)

E

Endoh, Tetsuo (Tohoku Univ.)   p. 83 (S4-2)
Endoh, Tetsuo (Tohoku Univ., JST-ACCEL)   p. 99 (S5-4)
Ernst, Thomas (CEA Leti)   p. 1 (K1-1)

F

Fang, Hsin-Kai (National Tsing Hua Univ.)   p. 67 (S2-3)
Fei, Jiayang (Univ. of Tokyo)   p. 9 (S1-3)
Fujimoto, Yuta (Nara Inst. of Science and Tech. (NAIST))   p. 55 (P-22)
Fujimura, Nobuyuki (Nagoya Univ.)   p. 45 (P-17)
Fujimura, Nobuyuki (Nagoya Univ.)   p. 85 (S4-3)
Fujita, Yuichi (Osaka Univ.)   p. 21 (P-5)
Fukuda, Koichi (AIST)   p. 105 (S6-2)
Fukuda, Koichi (AIST)   p. 107 (S6-3)
Funakubo, Hiroshi (Sophia Univ.)   p. 5 (S1-1)

G

Golubkov, Vladimir (St. Petersburg Electrotechnical Univ.)   p. 121 (S8-2)

H

Hagiwara, Chihiro (National Inst. of Tech., Tokyo collage)   p. 47 (P-18)
Hamaya, Kohei (Osaka Univ.)   p. 19 (P-4)
Hamaya, Kohei (Osaka Univ.)   p. 21 (P-5)
Hasegawa, Tsuyoshi (Waseda Univ.)   p. 123 (S8-3)
Hashimoto, Shuichiro (Waseda Univ.)   p. 101 (S5-5)
Hashizume, Tamotsu (Hokkaido Univ.)   p. 81 (S4-1)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 87 (S4-4)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 91 (S4-6)
Hattori, Junichi (AIST)   p. 105 (S6-2)
Heya, Akira (Univ. of Hyogo)   p. 117 (S7-4)
Hiraiwa, Atsushi (Waseda.Univ.)   p. 15 (P-2)
Hirano, Shota (Univ. of Hyogo)   p. 117 (S7-4)
Hosoi, Takuji (Osaka Univ.)   p. 43 (P-16)
Hosono, Hideo (Tokyo Inst. of Tech.)   p. 113 (S7-2)
Hsu, Hao-Tang (Powerchip Technology)   p. 25 (P-7)
Hsu, Hao-Tang (Powerchip Technology)   p. 31 (P-10)
Huang, S.-J. (National Taiwan Normal Univ.)   p. 17 (P-3)
Hwang, Hann-Ping (Powerchip Technology)   p. 25 (P-7)
Hwang, Hann-Ping (Powerchip Technology)   p. 31 (P-10)

I

Ichikawa, Kazuhide (Kyoto Univ.)   p. 29 (P-9)
Ide, Keisuke (Tokyo Inst. of Tech.)   p. 113 (S7-2)
Iizuka, Shota (Chiba Univ.)   p. 107 (S6-3)
Ilyin, Vladimir (St. Petersburg Electrotechnical Univ.)   p. 121 (S8-2)
Imura, Masataka (NIMS)   p. 37 (P-13)
Inoue, Masao (Renesas Electronics)   p. 69 (S2-4)
Ishida, Masahiro (Panasonic)   p. 43 (P-16)
Ishidzuka, Shinji (National Inst. of Tech., Akita College)   p. 97 (S5-3)
Ishikawa, Yasuaki (Nara Inst. of Science and Tech. (NAIST))   p. 55 (P-22)
Ito, Joyo (Osaka Univ.)   p. 43 (P-16)
Ito, Kazuhiro (Osaka Univ.)   p. 39 (P-14)
Ivanov, Alexey (St. Petersburg Electrotechnical Univ.)   p. 121 (S8-2)
Ivanov, Tsvetan (imec)   p. 75 (S3-3)

K

Kadoshima, Masaru (Renesas Electronics)   p. 69 (S2-4)
Kageshima, Hiroyuki (Shimane Univ., JST-ACCEL)   p. 99 (S5-4)
Kamiya, Toshio (Tokyo Inst. of Tech.)   p. 113 (S7-2)
Kanashima, Takeshi (Osaka Univ.)   p. 19 (P-4)
Kanashima, Takeshi (Osaka Univ.)   p. 21 (P-5)
Kanematsu, Masayuki (Nagoya Univ.)   p. 73 (S3-2)
Kang, Youngha (Samsung Electronics)   p. 33 (P-11)
Katayama, Kiriha (Tokyo Inst. of Tech.)   p. 5 (S1-1)
Kato, Yusuke (Nagoya Univ.)   p. 35 (P-12)
Kawarada, Hiroshi (Waseda Univ.)   p. 15 (P-2)
Kiguchi, Taknori (Tohoku Univ.)   p. 5 (S1-1)
Kim, Gang-Jun (POSTECH)   p. 33 (P-11)
Kim, Jiyoung   p. 71 (S3-1)
Kirkham, Christopher (Univ. of Tsukuba)   p. 77 (S3-4)
Kita, Koji (Univ. of Tokyo)   p. 9 (S1-3)
Kizu, Takio (NIMS)   p. 115 (S7-3)
Knoll, Lars (Ascatron AB)   p. 41 (P-15)
Kobashi, Kazuyoshi (NIMS)   p. 37 (P-13)
Kobayashi, Kiyoteru (Tokai Univ.)   p. 27 (P-8)
Kobayashi, Taro (Osaka Univ.)   p. 19 (P-4)
Kohama, Kazuyuki (Osaka Univ.)   p. 39 (P-14)
Konno, Toyohiko (Tohoku Univ.)   p. 5 (S1-1)
Kumomi, Hideya (Tokyo Inst. of Tech.)   p. 113 (S7-2)
Kunugi, Ryota (Waseda Univ.)   p. 13 (P-1)
Kurishima, Kazunori (Meiji Univ.)   p. 39 (P-14)
Kurishima, Kazunori (Meiji Univ.)   p. 59 (P-24)
Kurishima, Kazunori (Meiji Univ.)   p. 115 (S7-3)
Kurosawa, Masashi (Nagoya Univ.)   p. 79 (S3-5)
Kwon, Sung-Kyu (Chungnam National Univ.)   p. 57 (P-23)

L

Lee, Ga-Won (Chungnam National Univ.)   p. 57 (P-23)
Lee, Hi-Deok (Chungnam National Univ.)   p. 57 (P-23)
Lee, J.-W. (National Taiwan Normal Univ.)   p. 17 (P-3)
Lee, Jaegil   p. 71 (S3-1)
Lee, M. H. (National Taiwan Normal Univ.)   p. 17 (P-3)
Lee, Nam-Hyun (Samsung Electronics)   p. 33 (P-11)
Li, Dong-Yan (National Tsing Hua Univ.)   p. 67 (S2-3)
Liao, M.-H. (National Taiwan Univ.)   p. 17 (P-3)
Lin, Dennis (imec)   p. 75 (S3-3)
Liu, C. (National Taiwan Normal Univ.)   p. 17 (P-3)
Liu, S.-N. (National Taiwan Normal Univ.)   p. 17 (P-3)
Liu, Yu Ming (National Cheng Kung Univ.)   p. 31 (P-10)
Lucero, Antonio T. (U. Texas, Dallas)   p. 71 (S3-1)
Luchinin, Victor (St. Petersburg Electrotechnical Univ.)   p. 41 (P-15)
Luchinin, Victor (St. Petersburg Electrotechnical Univ.)   p. 121 (S8-2)

M

Ma, Li-Ya (Univ. of Malaya)   p. 51 (P-20)
Makihara, Katsunori (Nagoya Univ.)   p. 35 (P-12)
Makihara, Katsunori (Nagoya Univ.)   p. 45 (P-17)
Makihara, Katsunori (Nagoya Univ.)   p. 85 (S4-3)
Masahara, Meishoku (AIST)   p. 107 (S6-3)
Matsukawa, Takashi (AIST)   p. 107 (S6-3)
Matsumura, Daisuke (Waseda Univ.)   p. 15 (P-2)
Matsuo, Naoto (Univ. of Hyogo)   p. 117 (S7-4)
Matsushita, Daisuke (Toshiba)   p. 95 (S5-2)
Matsuura, Masazumi (Renesas Electronics)   p. 69 (S2-4)
Migita, Shinji (Advanced Industrial Science and Technology)   p. 7 (S1-2)
Migita, Shinji (AIST)   p. 105 (S6-2)
Migita, Shinji (AIST)   p. 107 (S6-3)
Mikhaylov, Aleksey (St. Petersburg Electrotechnical Univ.)   p. 41 (P-15)
Minamisawa, Renato (ABB Schweiz AG)   p. 41 (P-15)
Minari, Hideki (Sony)   p. 75 (S3-3)
Mitoma, Nobuhiko (NIMS)   p. 115 (S7-3)
Miyazaki, Seiichi (Nagoya Univ.)   p. 35 (P-12)
Miyazaki, Seiichi (Nagoya Univ.)   p. 45 (P-17)
Miyazaki, Seiichi (Nagoya Univ.)   p. 85 (S4-3)
Mizubayashi, Wataru (AIST)   p. 107 (S6-3)
Mizukoshi, Takahiro (Wakayama Univ.)   p. 23 (P-6)
Mizutani, Masaharu (Renesas Electronics)   p. 69 (S2-4)
Mori, Takahiro (AIST)   p. 107 (S6-3)
Morita, Yukinori (AIST)   p. 107 (S6-3)
Moriyama, Satoshi (NIMS)   p. 107 (S6-3)
Muraguchi, Masakazu (Tohoku Univ.)   p. 83 (S4-2)
Murooka, Takuya (National Inst. of Tech., Tokyo College)   p. 53 (P-21)

N

Nabatame, Toshihide (International Center for Materials Nanoarchitectonics (NIMS))   p. 39 (P-14)
Nabatame, Toshihide (National Institute for Materials Science (NIMS))   p. 59 (P-24)
Nabatame, Toshihide (NIMS)   p. 65 (S2-2)
Nabatame, Toshihide (NIMS)   p. 115 (S7-3)
Nagae, Yuki (Nagoya Univ.)   p. 79 (S3-5)
Nagai, Ryu (Univ. of Tsukuba)   p. 91 (S4-6)
Nagao, Tadaaki (International Center for Materials Nanoarchitectonics (NIMS))   p. 39 (P-14)
Nagao, Tadaaki (NIMS)   p. 59 (P-24)
Nagata, Takahiro (NIMS)   p. 37 (P-13)
Nagatomi, Yuta (Kyushu Univ.)   p. 21 (P-5)
Nagayoshi, Hiroshi (National Inst. of Tech., Tokyo collage)   p. 47 (P-18)
Nagayoshi, Hiroshi (National Inst. of Tech., Tokyo College)   p. 49 (P-19)
Nagayoshi, Hiroshi (National Inst. of Tech., Tokyo College)   p. 53 (P-21)
Nakashima, Hiroshi (Kyushu Univ.)   p. 21 (P-5)
Nakatsuka, Osamu (Nagoya Univ.)   p. 73 (S3-2)
Nakatsuka, Osamu (Nagoya Univ.)   p. 79 (S3-5)
Nakayama, Takashi (Chiba Univ.)   p. 107 (S6-3)
Nakazawa, Masashi (Sony)   p. 75 (S3-3)
Nakazawa, Satoshi (Panasonic)   p. 43 (P-16)
Nishimura, Tomonori (Univ. of Tokyo)   p. 7 (S1-2)
Nishimura, Tomonori (Univ. of Tokyo)   p. 119 (S8-1)
Nohira, Hiroshi (Tokyo City Univ.)   p. 19 (P-4)
Nohira, Hiroshi (Tokyo City Univ.)   p. 89 (S4-5)
Nordin, Anis Nurashikin (International Islamic Univ. Malayisa)   p. 51 (P-20)
Nozaki, Hiroo (Kyoto Univ.)   p. 29 (P-9)
Nozaki, Mikito (Osaka Univ.)   p. 43 (P-16)
Numata, Toshinori (Toshiba)   p. 95 (S5-2)

O

Oda, Masato (Wakayama Univ.)   p. 23 (P-6)
Ogawa, Shuichi (Tohoku Univ.)   p. 97 (S5-3)
Ogura, Atsushi (Meiji Univ.)   p. 39 (P-14)
Ogura, Atsushi (Meiji Univ.)   p. 59 (P-24)
Ogura, Atsushi (Meiji Univ.)   p. 115 (S7-3)
Oh, Seungjun (NIMS)   p. 37 (P-13)
Ohi, Akihiko (International Center for Materials Nanoarchitectonics (NIMS))   p. 39 (P-14)
Ohi, Akihiko (NIMS)   p. 59 (P-24)
Ohi, Akihiko (NIMS)   p. 115 (S7-3)
Ohishi, Tomoji (Shibaura Inst. of Tech.)   p. 39 (P-14)
Ohishi, Tomoji (SIT)   p. 59 (P-24)
Ohishi, Tomoji (Shibaura Inst. of Tech.)   p. 115 (S7-3)
Ohmori, Kenji (Univ. of Tsukuba)   p. 93 (S5-1)
Ohta, Akio (Nagoya Univ.)   p. 35 (P-12)
Ohta, Akio (Nagoya Univ.)   p. 45 (P-17)
Ohta, Akio (Nagoya Univ.)   p. 85 (S4-3)
Oikawa, Takahiro (Tokyo Inst. of Tech.)   p. 5 (S1-1)
Oka, Takayasu (Osaka Univ.)   p. 21 (P-5)
Onaya, Takashi (Meiji Univ.)   p. 39 (P-14)
Ono, Keiji (RIKEN)   p. 107 (S6-3)
Ono, Tomoya (Univ. of Tsukuba)   p. 77 (S3-4)
Osachev, Eugeny (St. Petersburg Electrotechnical Univ.)   p. 65 (S2-2)
Ota, Hiroyuki (AIST)   p. 105 (S6-2)
Ota, Hiroyuki (AIST)   p. 107 (S6-3)
Ota, Kensuke (Toshiba)   p. 95 (S5-2)

P

Petrov, Anatoly (St. Petersburg Electrotechnical Univ.)   p. 65 (S2-2)

R

Reshanov, Sergey (Ascatron AB)   p. 41 (P-15)
Romanov, Alexander (St. Petersburg Electrotechnical Univ.)   p. 65 (S2-2)

S

Saitoh, Masumi (Toshiba)   p. 95 (S5-2)
Sakashita, Mitsuo (Nagoya Univ.)   p. 73 (S3-2)
Sakashita, Mitsuo (Nagoya Univ.)   p. 79 (S3-5)
Salahuddin, Sayeef (UC Berkeley)   p. 103 (S6-1)
Sasago, Tomoya (Tokyo City Univ.)   p. 89 (S4-5)
Sawada, Tomomi (International Center for Materials Nanoarchitectonics (NIMS))   p. 39 (P-14)
Sawada, Tomomi (NIMS)   p. 59 (P-24)
Sawada, Tomomi (NIMS)   p. 115 (S7-3)
Sawano, Kentarou (Tokyo City Univ.)   p. 21 (P-5)
Schöner, Adolf (Ascatron AB)   p. 41 (P-15)
Senami, Masato (Kyoto Univ.)   p. 29 (P-9)
Seo, Ji-Hoon (POSTECH)   p. 33 (P-11)
Shen, Chang-Hong (National Nano Device Laboratories)   p. 67 (S2-3)
Shibayama, Shigehisa (Nagoya Univ.)   p. 73 (S3-2)
Shibayama, Shigehisa (Nagoya Univ., Grad. Sch. of Eng.)   p. 79 (S3-5)
Shieh, Jia-Min (National Nano Device Laboratories)   p. 67 (S2-3)
Shimizu, Takao (Tokyo Inst. of Tech.)   p. 5 (S1-1)
Shimura, Kosuke (Waseda Univ.)   p. 13 (P-1)
Shimura, Takayoshi (Osaka Univ.)   p. 43 (P-16)
Shiraishi, Kenji (Nagoya Univ.)   p. 79 (S3-5)
Shiraishi, Kenji (Nagoya Univ., JST-ACCEL)   p. 99 (S5-4)
Shiraishi, Takahisa (Tohoku Univ.)   p. 5 (S1-1)
Soin, Norhayati (Univ. of Malaya)   p. 51 (P-20)
Son, Donghee (POSTECH)   p. 33 (P-11)
Song, Hyeong-Sub (Chungnam National Univ.)   p. 57 (P-23)
Sonoda, Kenichiro (Renesas Electronics)   p. 69 (S2-4)

T

Tachibana, Akitomo (Kyoto Univ.)   p. 29 (P-9)
Takahashi, Makoto (Osaka Univ.)   p. 39 (P-14)
Takakuwa, Yuji (Tohoku Univ.)   p. 97 (S5-3)
Takaura, Norikatsu (Hitachi, Research & Development Group, Center for Technology Innovation- Electronics)   p. 63 (S2-1)
Takeuchi, Wakana (Nagoya Univ.)   p. 73 (S3-2)
Tanaka, Chika (Toshiba)   p. 95 (S5-2)
Tanaka, Shin (Tokai Univ.)   p. 27 (P-8)
Tang, Jiayi (Tohoku Univ.)   p. 97 (S5-3)
Taniguchi, Satoshi (Sony)   p. 75 (S3-3)
Thang, Dao Duy (NIMS)   p. 59 (P-24)
Thean, Aaron (imec)   p. 75 (S3-3)
Toriumi, Akira (Univ. of Tokyo)   p. 7 (S1-2)
Toriumi, Akira (Univ. of Tokyo)   p. 11 (L-1)
Toriumi, Akira (Univ. of Tokyo)   p. 105 (S6-2)
Toriumi, Akira (Univ. of Tokyo)   p. 119 (S8-1)
Tsai, Yen-Lin (National Cheng Kung Univ.)   p. 25 (P-7)
Tsubomi, Kunihiro (Tohoku Univ.)   p. 83 (S4-2)
Tsukagoshi, Kazuhito (NIMS)   p. 115 (S7-3)
Tsuruoka, Thoru (NIMS)   p. 123 (S8-3)

U

Uchida, Hiroshi (Sophia Univ.)   p. 5 (S1-1)
Ueda, Tetsuo (Panasonic)   p. 43 (P-16)
Uenuma, Mutsunori (Nara Inst. of Science and Tech. (NAIST))   p. 55 (P-22)
Ulyashin, Alexander (SINTEF)   p. 49 (P-19)
Uraoka, Yukiharu (Nara Inst. of Science and Tech. (NAIST))   p. 55 (P-22)

V

Valov, Ilia (Peter Gruenberg Institute)   p. 123 (S8-3)
Vikharev, Anatoliy (Institute of Applied Physics RAS)   p. 121 (S8-2)

W

Watanabe, Heiji (Osaka Univ.)   p. 43 (P-16)
Watanabe, Heiji (Osaka Univ.)   p. 75 (S3-3)
Watanabe, Hiromasa (Nagoya Univ.)   p. 45 (P-17)
Watanabe, Takanobu (Waseda Univ.)   p. 13 (P-1)
Watanabe, Takanobu (Waseda Univ.)   p. 101 (S5-5)

X

Xie, M.-J. (National Taiwan Normal Univ.)   p. 17 (P-3)
Xu, Lun (Univ. of Tokyo)   p. 119 (S8-1)

Y

Yajima, Takeaki (Univ. of Tokyo)   p. 7 (S1-2)
Yajima, Takeaki (Univ. of Tokyo)   p. 119 (S8-1)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 87 (S4-4)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 91 (S4-6)
Yamada, Michihiro (Keio Univ.)   p. 21 (P-5)
Yamada, Shinya (Osaka Univ.)   p. 19 (P-4)
Yamada, Shinya (Osaka Univ.)   p. 21 (P-5)
Yamada, Takahiro (Osaka Univ.)   p. 43 (P-16)
Yamahori, Shunta (Tokyo City Univ.)   p. 89 (S4-5)
Yamamoto, Ippei (Shibaura Inst. of Tech.)   p. 39 (P-14)
Yamamoto, Ippei (Shibaura Inst. of Tech. (SIT))   p. 59 (P-24)
Yamamoto, Ippei (Shibaura Inst. of Tech.)   p. 115 (S7-3)
Yamamoto, Keisuke (Kyushu Univ.)   p. 21 (P-5)
Yamashiro, Riku (Osaka Univ.)   p. 19 (P-4)
Yamashita, Tomohiro (Renesas Electronics)   p. 69 (S2-4)
Yamashita, Yoshiyuki (NIMS)   p. 37 (P-13)
Yasuda, Tetsuji (AIST)   p. 107 (S6-3)
Yatabe, Zenji (Hokkaido Univ.)   p. 81 (S4-1)
Yokouchi, Tatsuhiko (Tokyo Inst. of Tech.)   p. 5 (S1-1)
Yoshida, Shinichi (Sony)   p. 75 (S3-3)
Yoshigoe, Akitaka (Japan Atomic Energy Agency)   p. 43 (P-16)
Yoshigoe, Akitaka (Japan Atomic Energy Agency)   p. 97 (S5-3)
Yoshikawa, Hideki (NIMS)   p. 37 (P-13)

Z

Zaima, Shigeaki (Nagoya Univ.)   p. 73 (S3-2)
Zaima, Shigeaki (Nagoya Univ.)   p. 79 (S3-5)
Zenitaka, Masato (Osaka Univ.)   p. 19 (P-4)