International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".

Technical Program: One Page (Not Separated) version

Author Index: HERE

Session Schedule

Wednesday, November 5, 2008


Opening Address 10:10 - 10:15
K Keynote Speech 10:15 - 12:15
Lunch 12:15 - 13:20
S1 High-k/Metal Gate -1 13:20 - 14:50
Coffee Break 14:50 - 15:10
S2 High-k Memory 15:10 - 16:20
Break 16:20 - 16:30
G1 Poster Shotgun -1 16:30 - 17:20
P1 Poster Presentation -1 17:30 - 18:50
Banquet 19:00 - 21:00

Thursday, November 6, 2008


S3 Characterization 9:00 - 10:30
Coffee Break 10:30 - 10:50
S4 High-k/Metal Gate -2 10:50 - 12:20
Lunch 12:20 - 13:40
S5 High Mobility Channel 13:40 - 15:30
Break 15:30 - 15:40
G2 Poster Shotgun -2 15:40 - 16:40
P2 Poster Presentation -2 16:50 - 18:50

Friday, November 7, 2008


S6 Reliability 9:00 - 10:10
Coffee Break 10:10 - 10:30
S7 Modeling and Simulations / Oxide Growth 10:30 - 12:20
Lunch 12:20 - 13:40
S8 Resistive RAM 13:40 - 14:50
Coffee Break 14:50 - 15:10
S9 High-k/Metal Gate -3 15:10 - 16:40
Closing Remarks and Awarding Ceremony 16:40 - 17:00

List of Papers

Remark: The presenter of each paper is marked with "*".

Wednesday, November 5, 2008

Session K Keynote Speech
Time: 10:15 - 12:15 Wednesday, November 5, 2008
Chairs: Shigeaki Zaima (Nagoya Univ., Japan), Jiro Yugami (Renesas, Japan)

K-1 (Time: 10:15 - 11:15)

Title	(Keynote Address) Industrialization of Nanoelectronics
Author	*Hisatsune Watanabe (Selete, Japan)
Page	p. 1

K-2 (Time: 11:15 - 12:15)

Title	(Keynote Address) Integration of Dual Work Function CMOS using Doped High-K Dielectric and Metal Gates to Achieve Improved Power-Performance
Author	*Serge Biesemans (IMEC, Belgium)
Page	pp. 3 - 4

Session S1 High-k/Metal Gate -1
Time: 13:20 - 14:50 Wednesday, November 5, 2008
Chairs: Masaaki Niwa (Panasonic, Japan), Sangjin Hyun (Samsung Electronics, Republic of Korea)

S1-1 (Time: 13:20 - 13:50)

Title	(Invited Paper) Reliability Characterization of Metal Electrode/High-k Dielectric Stacks for the 45nm Node and Beyond
Author	*Byoung Hun Lee, G. Bersuker, D. Heh, H. Park, C. Y. Kang, C. Young, H. Tseng, R. Jammy (SEMATECH, United States)
Page	pp. 5 - 6

S1-2 (Time: 13:50 - 14:10)

Title	Thermal Stability and Size Scalability of Metastable Cubic Phase HfO₂ with k=50
Author	*Shinji Migita (MIRAI-ASRC, AIST, Japan), Yukimune Watanabe (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (MIRAI-ASRC, AIST/Univ. of Tokyo, Japan)
Page	pp. 7 - 8

S1-3 (Time: 14:10 - 14:30)

Title	Further EOT Scaling below 0.4 nm for High-k Gated MOSFET
Author	*Kuniyuki Kakushima, Koichi Okamoto, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 9 - 10

S1-4 (Time: 14:30 - 14:50)

Title	Importance of Ge-Friendly High-k Material Selection for Ge MIS Gate Dielectrics
Author	*Toshiyuki Tabata, Choong Hyun Lee, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 11 - 12

Session S2 High-k Memory
Time: 15:10 - 16:20 Wednesday, November 5, 2008
Chairs: Kiyoteru Kobayashi (Tokai Univ., Japan), Alexander Shluger (Univ. College London, Great Britain)

S2-1 (Time: 15:10 - 15:40)

Title	(Invited Paper) High-k Gate Dielectric and Metal Gate Technology for Sub-40nm DRAM
Author	*Sangjin Hyun, Hag-Ju Cho, Sug-Hun Hong, Hye-Lan Lee, Hyung-Seok Hong, Hoon-Joo Na, Hong-Bae Park, Yu-Gyun Shin, Sung-Tae Kim, Joo-Tae Moon, Won-Seong Lee (Samsung Electronics Co., Ltd., Republic of Korea)
Page	pp. 13 - 14

S2-2 (Time: 15:40 - 16:00)

Title	Memory Characteristics of Atomic Layer Deposited High-k HfAlO Nanocrystal Capacitors with IrOx Metal Gate
Author	*Atanu Das, Writam Banerjee, Ziaur Rahaman Seikh, Siddheswar Maikap, Liann. Be Chang (Chang Gung Univ., Taiwan)
Page	pp. 15 - 16

S2-3 (Time: 16:00 - 16:20)

Title	Hafnium Germanium Oxide as Trapping Layer for Nonvolatile Memory Application
Author	Chao-Sung Lai, Chih-Hsin Chang, *Patrick Chou (Chang Gung Univ., Taiwan)
Page	pp. 17 - 18

Session G1 Poster Shotgun -1
Time: 16:30 - 17:20 Wednesday, November 5, 2008
Chairs: Hiroshi Nohira (Musashi Inst. of Tech., Japan), Takeo Matsuki (Selete, Japan)

Session P1 Poster Presentation -1
Time: 17:30 - 18:50 Wednesday, November 5, 2008

P1-1 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Time-Resolved Observation of Trapping-Mediated O₂ Adsorption on Si(111)-7x7 by Synchrotron Radiation Photoelectron Spectroscopy
Author	*Akitaka Yoshigoe, Yuden Teraoka (Japan Atomic Energy Agency, Japan)
Page	pp. 19 - 20

P1-2 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Low Energy N₂ Plasma Immersion Ion Implantation (PIII) for Multiple-Oxide-Thickness
Author	Kung Ming Fan, Chen Yu Lo, *Chao Sung Lai (Chang Gung Univ., Taiwan), Shang Feng Huang, Wen Fa Tsai, Chi Fong Ai (Institution of Nuclear Energy Research, Taiwan)
Page	pp. 21 - 22

P1-3 (Growth and related process of gate dielectric films)

Title	HfO_xN_y Formation on 3-Dimentional Structure Utilizing ECR Sputtering
Author	*Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan)
Page	pp. 23 - 24

P1-4 (High-k gate dielectrics)

Title	Characterization of Chemical Bonding Features in HfGd_xO_y Film Formed by MOCVD Using DPM Precursors
Author	*Daisuke Kanme, Akio ohta, Ryo Yougauchi, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan)
Page	pp. 25 - 26

P1-5 (High-k gate dielectrics)

Title	La Concentration Dependence of Chemical State and Interface Reaction in HfxLayOz/SiO₂/Si Substrate Stack
Author	*Takashi Yamamoto, Hirofumi Seki, Junichi Tsuji, Shingo Ogawa, Naoyuki Sugiyama (Toray Research Center, Inc., Japan), Koji Kita (Univ. of Tokyo, Japan)
Page	pp. 27 - 28

P1-6 (High-k gate dielectrics)

Title	Annealing-Temperature Dependence of Compositional Depth Profile and Chemical Bonding of HfLaO_x/SiO₂/Si Layer
Author	*Kouji Kitamura (Musashi Inst. of Tech., Japan), Kiichi Tachi, Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Inst. of Tech., Japan), Hiroshi Nohira (Musashi Inst. of Tech., Japan)
Page	pp. 29 - 30

P1-7 (High-k gate dielectrics)

Title	Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces
Author	*Tomohiro Hayashi, Chihiro Tamura (Univ. of Tsukuba, Japan), Motoyuki Sato (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Tsukuba Research Center for Interdisciplinary Materials Science, Japan)
Page	pp. 31 - 32

P1-8 (High-k gate dielectrics)

Title	Study on HfO₂/Si and HfSiO/Si Structures Fabricated by Oxidation of Metal Thin Films
Author	*Yusuke Oniki, Yoshitaka Iwazaki, Masahiko Hasumi, Tomo Ueno, Koichi Kuroiwa (Tokyo Univ. of Agri. and Tech., Japan)
Page	pp. 33 - 34

P1-9 (High-k gate dielectrics)

Title	Physical Properties and Electrical Characteristics of High-k NdOxNy Gate Dielectrics
Author	*Tung-Ming Pan, Sung-Ju Hou, Li-Chen Yen, Jian-Wei Cheng, Tung-Han Wu (Chang Gung Univ., Taiwan)
Page	pp. 35 - 36

P1-10 (Metal gate electrodes)

Title	Application of PVD-LaO with Angstrom-Scale Contorollability to Metal/Cap/High-k Gate Stacks
Author	*Takaaki Kawahara, Shinsuke Sakashita, Masaharu Mizutani, Masao Inoue, Yutaka Takeshima, Shinichi Yamanari, Naofumi Murata, Masatoshi Anma, Yukio Nishida (Renesas Technology Corp., Japan), Seiji Matsuyama, Riichirou Mitsuhashi, Yoshihiro Satoh, Akihiko Tsudumitani (Matsushita Electric Industrial Co., Ltd., Japan), Jiro Yugami (Renesas Technology Corp., Japan)
Page	pp. 37 - 38

P1-11 (Metal gate electrodes)

Title	Demonstration of Gate Work Function Engineered FinFET CMOS
Author	*Yongxun Liu (AIST, Japan), Tetsuro Hayashida (Meiji Univ., Japan), Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Kenichi Ishii, Yuki Ishikawa (AIST, Japan), Atsushi Ogura (Meiji Univ., Japan), Eiichi Suzuki, Meishoku Masahara (AIST, Japan)
Page	pp. 39 - 40

P1-12 (Metal gate electrodes)

Title	A Comparative Study of the Electrical Characteristics of Sputtered TiN Gate Planar MOSFETs and FinFETs
Author	*Tetsuro Hayashida (Meiji Univ., Japan), Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Eiichi Suzuki (AIST, Japan), Atsushi Ogura (Meiji Univ., Japan), Meishoku Masahara (AIST, Japan)
Page	pp. 41 - 42

P1-13 (Metal gate electrodes)

Title	Nitrogen Content Dependence of Resistivity and Crystalline Structures of Ti-Si-N and Hf-Si-N Gate Electrodes
Author	*Kazuaki Miyamoto, Kohei Furumai, Ben E. Urban, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 43 - 44

P1-14 (Metal gate electrodes)

Title	Ti_1-xAl_xN_y Metal Gate Electrodes Deposited by AL-PVD and ALD
Author	*John Macneil, Yun Zhou, Paulo Lima, Robert Trowell, Keith Buchanan (Aviza Technology, Great Britain)
Page	pp. 45 - 46

P1-15 (Ferroelectric and high-k films for memory applications)

Title	The Fabrication and Characterization of Pt/TiO_x/Pt Capacitors for Resistive Random Access Memory Applications
Author	Jordan Chun-Hsien Hsu, Ingram Yin-ku Chang, Chun-Heng Chen, *Joseph Ya-min Lee (Tsing-Hua Univ., Taiwan)
Page	pp. 47 - 48

P1-16 (Ferroelectric and high-k films for memory applications)

Title	Effect of Top Electrode on the HfOx/TiN RRAM Device
Author	Kow Ming Chang, *Wen Hsien Tzeng (National Chiao Tung Univ., Taiwan), Kow-Chen Liu (Chang Gung Univ., Taiwan), Pang Shiu Chen (MingShin Univ. of Science and Tech., Taiwan), Heng Yuan Lee, Ming Jinn Tsai (Industrial Technology Research Institute, Taiwan), Jin Ping Lin (Nayan Technology Corp., Taiwan)
Page	pp. 49 - 50

P1-17 (Dielectric reliability related to process integration)

Title	Characterization of Fluorine-Ion Implant Effects on p-Channel LTPS TFTs with SiON Gate Dielectric
Author	*Chao-Sung Lai, Tz-An Huang, Hsing-Kan Peng (Chang Gung Univ., Taiwan)
Page	pp. 51 - 52

P1-18 (Characterization and control of gate dielectric/Si interface)

Title	Residual Order in Thermal Oxide of Fully Strained SiGe Alloy on Si
Author	*Takayoshi Shimura, Yuki Okamoto, Tomoyuki Inoue, Takuji Hosoi, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 53 - 54

P1-19 (Characterization and control of gate dielectric/Si interface)

Title	Detection of Silicon Atomic Displacement in HfO₂/SiO₂/Si(100)
Author	*Kaoru Sasakawa (Kobelco Res. Inst. Inc., Japan), Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ., Japan)
Page	pp. 55 - 56

P1-20 (Theoretical approaches to gate dielectrics/Si structure)

Title	Kinetic Model for High Pressure Oxidation of Silicon
Author	*Takanobu Watanabe, Tomoya Onda, Tomofumi Zushi, Iwao Ohdomari (Waseda Univ., Japan)
Page	pp. 57 - 58

P1-21 (Theoretical approaches to gate dielectrics/Si structure)

Title	Theoretical Study on Nitrogen and Nitrogen Oxide Molecules in Silicon Oxide
Author	*Hiroyuki Kageshima (NTT, Japan), Toru Akiyama (Mie Univ., Japan), Masashi Uematsu (Keio Univ., Japan), Tomonori Ito (Mie Univ., Japan)
Page	pp. 59 - 60

Thursday, November 6, 2008

Session S3 Characterization
Time: 9:00 - 10:30 Thursday, November 6, 2008
Chairs: Kazuyoshi Torii (Hitachi, Japan), Sungjoo Lee (National Univ. of Singapore, Singapore)

S3-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) What Can We Learn from Structural Characterization of Metal-Oxide Gate Stacks?
Author	*Matt Copel (IBM, United States)
Page	pp. 61 - 62

S3-2 (Time: 9:30 - 9:50)

Title	Electrical Properties of Ge₃N₄/Ge Gate Stacks Fabricated Using High-Density Plasma Nitridation
Author	*Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 63 - 64

S3-3 (Time: 9:50 - 10:10)

Title	Understanding of Carrier Transport in MOS Device with High-k Gate Dielectric: An Electron-Beam-Induced Current Study of Leakage Sites
Author	*Jun Chen, Takashi Sekiguchi, Masami Takase, Naoki Fukata, Toyohiro Chikyow (National Inst. for Materials Science, Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan), Motoyuki Sato, Yasuo Nara (Selete, Japan), Keisaku Yamada (Waseda Univ., Japan)
Page	pp. 65 - 66

S3-4 (Time: 10:10 - 10:30)

Title	Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O₂ Partial Pressure
Author	*Yoshishige Tsuchiya (Tokyo Inst. of Tech./Univ. of Southampton, Japan), Ryosuke Furukawa (Tokyo Inst. of Tech./Musashi Inst. of Tech., Japan), Koji Kitamura, Hiroshi Nohira (Musashi Inst. of Tech., Japan), Shunri Oda (Tokyo Inst. of Tech., Japan)
Page	pp. 67 - 68

Session S4 High-k/Metal Gate -2
Time: 10:50 - 12:20 Thursday, November 6, 2008
Chairs: Toshihide Nabatame (Selete, Japan), Byoung Hun Lee (SEMATECH, United States)

S4-1 (Time: 10:50 - 11:20)

Title	(Invited Paper) High-k/Metal Gate CMOS Technology for 32 nm Generation and Beyond
Author	*Mariko Takayanagi (Toshiba America Electronic Components, Inc., United States)
Page	pp. 69 - 70

S4-2 (Time: 11:20 - 11:40)

Title	Impacts of Composition in Ternary La-Al-O Films on V_fb for Application to Dual-High-k Gate Dielectric Technology
Author	*Masamichi Suzuki, Masato Koyama, Atsuhiro Kinoshita (Toshiba Corp., Japan)
Page	pp. 71 - 72

S4-3 (Time: 11:40 - 12:00)

Title	Electrical Characterization of La₂O₃-Gated MOSFET with Mg Incorporation
Author	*Tomotsune Koyanagi, Kiichi Tachi, Kouichi Okamoto, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 73 - 74

S4-4 (Time: 12:00 - 12:20)

Title	XPS Study of TiAlN/HfSiON Gate Stack - Impact of Al Redistribution on Effective Work Function Change -
Author	*Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Selete, Japan)
Page	pp. 75 - 76

Session S5 High Mobility Channel
Time: 13:40 - 15:30 Thursday, November 6, 2008
Chairs: Akira Nishiyama (Toshiba, Japan), Yoshinari Kamakura (Osaka Univ., Japan)

S5-1 (Time: 13:40 - 14:10)

Title	(Invited Paper) Integration of High-k Gate Dielectrics on High Mobility Channel Materials
Author	*Sungjoo Lee, J. Q. Lin, H. J. Oh (National Univ. of Singapore, Singapore), G. Q. Lo, D. L. Kwong (Institute of Microelectronics, Singapore), D. Z. Chi (Institute of Materials Research and Engineering, Singapore)
Page	pp. 77 - 78

S5-2 (Time: 14:10 - 14:30)

Title	Improved MIS Characteristics of HfO₂/GaAs Interfaces with Ultrathin Epitaxial Ge Interface Layers
Author	Tetsuji Yasuda, *Noriyuki Miyata (AIST, Japan), Akihiro Ohtake (National Inst. for Materials Science, Japan)
Page	pp. 79 - 80

S5-3 (Time: 14:30 - 14:50)

Title	Study of Electron Mobility of Ge n-MOSFETs with High Pressure Oxidized GeO₂
Author	*Tomonori Nishimura, Choong Hyun Lee, Koji Kita, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 81 - 82

S5-4 (Time: 14:50 - 15:10)

Title	A Study on Electronic Structure of Silicon Nanowires with Diverse Diameters and Orientations for High Performance FET
Author	*Yeonghun Lee (Tokyo Inst. of Tech., Japan), Takahiro Nagata (Univ. of Tsukuba, Japan), Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Kenji Shiraishi (Univ. of Tsukuba, Japan), Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 83 - 84

S5-5 (Time: 15:10 - 15:30)

Title	Evaluation of Transconductance Enhancement of <110> and <100> -Channel Strained Si Nanowire Field-Effect Transistors
Author	*Aya Seike, Ikushin Tsuchida (Waseda Univ., Japan), Daisuke Kosemura, Atsushi Ogura (Meiji Univ., Japan), Takanobu Watanabe, Iwao Ohdomari (Waseda Univ., Japan)
Page	pp. 85 - 86

Session G2 Poster Shotgun -2
Time: 15:40 - 16:40 Thursday, November 6, 2008
Chairs: Koji Eriguchi (Kyoto Univ., Japan), Ken Uchida (Tokyo Inst. of Tech., Japan)

Session P2 Poster Presentation -2
Time: 16:50 - 18:50 Thursday, November 6, 2008

P2-1 (Growth and related process of gate dielectric films)

Title	Advantage of Using ∼100% Ozone for CVD SiO₂ Grown under 200°C Using HMDS and UV Light Excited Ozone
Author	*Naoto Kameda, Tetsuya Nishiguchi (Meidensha Corp./AIST, Japan), Yoshiki Morikawa, Mitsuru Kekura (Meidensha Corp., Japan), Hidehiko Nonaka, Shingo Ichimura (AIST, Japan)
Page	pp. 87 - 88

P2-2 (Growth and related process of gate dielectric films)

Title	Densification of CVD-SiO₂ Films by Post UV-Light-Excited Ozone Annealing
Author	*Naoto Kameda (Meidensha Corp./AIST, Japan), Shigeru Saito (Meidensha Corp., Japan), Tetsuya Nishiguchi (Meidensha Corp./AIST, Japan), Toshinori Miura, Mitsuru Kekura (Meidensha Corp., Japan), Hidehiko Nonaka, Shingo Ichimura (AIST, Japan)
Page	pp. 89 - 90

P2-3 (Growth and related process of gate dielectric films)

Title	Magnetron Sputtering with a Third Electrode for Suppressing Plasma Damage during Metal Oxide Film Deposition
Author	Lu Hong, Akira Asano (Nagaoka Univ. of Tech., Japan), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech., Japan), Yuichiro Kuroki, *Kanji Yasui, Masasuke Takata, Tadashi Akahane (Nagaoka Univ. of Tech., Japan)
Page	pp. 91 - 92

P2-4 (Growth and related process of gate dielectric films)

Title	Micro Roughness of Silicon Dioxide Thermally Grown on Atomically Flat Silicon (111) Terrace
Author	*Keichiro Ohsawa, Yusuke Hayashi (Univ. of Tsukuba, Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba/TIMS, Japan)
Page	pp. 93 - 94

P2-5 (High-k gate dielectrics)

Title	Influence of Hole Trapping on Threshold Voltage Shift in HfSiOx Films
Author	*Chihiro Tamura, Tomohiro Hayashi (Univ. of Tsukuba, Japan), Kenji Ohmori (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Tsukuba Research Center for Interdisciplinary Materials Science, Japan)
Page	pp. 95 - 96

P2-6 (High-k gate dielectrics)

Title	Electrical Properties and Structure of Laser Spike Annealed Hafnium Oxide High-k Dielectric
Author	*Dong Hak Kim, Joon Won Park (Kyung Hee Univ., Republic of Korea), You Min Chang (R&D Center FST, Republic of Korea), Daeyoung Lim (Kyung Hee Univ., Republic of Korea), Haeyang Chung (Kyung Hee Univ./R&D Center FST, Republic of Korea)
Page	pp. 97 - 98

P2-7 (High-k gate dielectrics)

Title	Systematic study on the Effect of Laser Anneal on the Charge Trapping Behavior of Hafnium Oxide
Author	*Joon Won Park, Dong Hak Kim (Kyung Hee Univ., Republic of Korea), You Min Chang (FST, Republic of Korea), Daeyoung Lim (Kyung Hee Univ., Republic of Korea), Haeyang Chung (Kyung Hee Univ., FST, Republic of Korea)
Page	pp. 99 - 100

P2-8 (High-k gate dielectrics)

Title	Fabrication of Al₂O₃ Thin Film by RF Magnetron Sputtering method and Evaluation of Electrical Properties
Author	*Yutaka Nishioka, Natsuki Fukuda, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu (ULVAC, Inc., Japan)
Page	pp. 101 - 102

P2-9 (High-k gate dielectrics)

Title	Sol-Gel Deposited CeO₂ Thin Film as Gate Dielectric for CMOS Technology
Author	Anil B. Patil, *Ashok M. Mahajan (North Maharashtra Univ., Jalgaon, India)
Page	pp. 103 - 104

P2-10 (High-k gate dielectrics)

Title	Effects of ALD-Al₂O₃ Interface Layers on Interfacial Properties of Ge MOS Capacitors
Author	*Ryosuke Kato, Shinya Kyogoku, Mitsuo Sakashita, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 105 - 106

P2-11 (Mobility enhancement technology)

Title	Fabrication of GeO₂ by Thermal Oxidation and Its Structure Analysis
Author	*Nurbaizura Mohamed, Yoshitaka Iwazaki, Masahiko Hasumi, Tomo Ueno, Koichi Kuroiwa (Tokyo Univ. of Agri. and Tech., Japan), Yukio Fukuda (Tokyo Univ. of Science Suwa, Japan)
Page	pp. 107 - 108

P2-12 (Mobility enhancement technology)

Title	Orientation Dependence of Ge Surface Oxidation
Author	*Shingo Ogawa, Junichi Tsuji, Takashi Yamamoto, Yuichi Muraji (Toray Research Center, Inc., Japan), Yuichi Haruyama, Kazuhiro Kanda, Shinji Matsui (Univ. of Hyogo, Japan)
Page	pp. 109 - 110

P2-13 (Mobility enhancement technology)

Title	Study of Impact Ionization Efficiency in High-Performance Graded-SiGe pMOSFETs
Author	Ting-Kuo Kang, *Chia-Ming Kuo, Bo-Chin Wang, Yu-Huan Sa, Chung-Yi Wu, San-Lein Wu (Cheng Shiu Univ., Taiwan)
Page	pp. 111 - 112

P2-14 (Mobility enhancement technology)

Title	Hot Carrier Reliability of Strained-Si n-MOSFET
Author	*Milan Kumar Bera (Seoul National Univ., Republic of Korea), C. Mahata, S. S. Mahato, T. K. Maiti, P. Chakraborty, C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Page	pp. 113 - 114

P2-15 (Ferroelectric and high-k films for memory applications)

Title	SOMOS Memory Device Using High-k Y₂O₃ Charge Trapping Layer for Nonvolatile Memory Application
Author	*Tung-Ming Pan, Wen-Wei Yeh, Zhi-Hong Li, Jun-Kai Peng, Meng-Han Tsai, Chia-Wei Hu, Jie-Tin Lo (Chang Gung Univ., Taiwan)
Page	pp. 115 - 116

P2-16 (Ferroelectric and high-k films for memory applications)

Title	High-k HfGdO Charge Trapping Layer in SONOS-type Nonvolatile Memory by In Situ RF Dual-Sputtering Method
Author	*Pai-Chi Chou, Chao-Sung Lai, Woei-Cherng Wu, Li-Chi Liu (Chang Gung Univ., Taiwan), Yu-Ching Fang, Li Hsu, Hui-Chun Wang (Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division, Taiwan)
Page	pp. 117 - 118

P2-17 (Ferroelectric and high-k films for memory applications)

Title	High Performance TaAlOx-based MIM Capacitors for RF and Mixed Signal Applications
Author	*Chandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), M. K. Bera (Seoul National Univ., Republic of Korea), M. K. Hota, T. Das, P. S. Das, S. Mallik, B. Majhi, I. Chatterjee, P. K. Bose, C.K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Page	pp. 119 - 120

P2-18 (Ferroelectric and high-k films for memory applications)

Title	Charge Storage Characteristics of High-k TaYOx-based Trapping Layer for High Density Non-Volatile Flash Memory Application
Author	*Partha Sarathi Das, C. Mahata (Indian Inst. of Tech., Kharagpur, India), M.K. Bera (Seoul National Univ., Republic of Korea), S. Mallik, T. Das, B. Majhi, I. Chatterjee, M. K. Hota, A. Chakraborty, P. K. Bose, C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Page	pp. 121 - 122

P2-19 (Gate dielectric wearout and reliability)

Title	The Rate of Degradation of Thin SiO₂ Films under Application of High Electric Stress
Author	*Zhao Lu (Univ. of Tsukuba, Japan), Masaaki ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Device Technology Co., Ltd., Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 123 - 124

P2-20 (Gate dielectric wearout and reliability)

Title	Reliability of TiO₂ High-k Gate Dielectrics on n-GaAs with Ge Interfacial Passivation Layer
Author	*Tanmoy Das, C. Mahata (Indian Inst. of Tech., Kharagpur, India), M.K. Bera (Seoul National Univ., Republic of Korea), P.S. Das, A. Chakraborty, I. Chatterjee, B. Majhi, S. Mallik, M. K. Hota, C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Page	pp. 125 - 126

P2-21 (Electrical characterization of gate dielectrics)

Title	Improvement of Dielectric Properties on TEOS-SiO₂ Caused by Stress Relaxation with Thermal Annealing
Author	*Mitsuru Sometani, Ryu Hasunuma (Univ. of Tsukuba, Japan), Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Device Technology Co., Ltd., Japan), Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 127 - 128

P2-22 (Electrical characterization of gate dielectrics)

Title	Electrical Characterization and Dielectric Property of MIS Capacitors Using a High-k CeZrO₂ Ternary Oxide as the Gate Dielectric
Author	*Pi-chun Juan, Shin-chun Ju (Mingchi Univ. of Tech., Taiwan), Main-gwo Chen (National Tsing-Hua Univ., Taiwan), Cheng-Li Lin (Feng Chia Univ., Taiwan), Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan), Jong-hong Lu (Mingchi Univ. of Tech., Taiwan)
Page	pp. 129 - 130

P2-23 (Ferroelectric and high-k films for memory applications)

Title	Molecular Dynamics Simulations of Nano-Size Effects in Ferroelectric Memories
Author	*Masaya Iwamoto, Takeshi Nishimatsu, Yoshiyuki Kawazoe (Tohoku Univ., Japan), Umesh V. Waghmare (JNCASR, India), David Vanderbilt (Rutgers Univ., United States)
Page	pp. 131 - 132

P2-24 (Theoretical approaches to gate dielectrics/Si structure)

Title	Theoretical Study of Local Dielectric Properties of La and Hf Oxide
Author	*Akinori Fukushima, Masato Senami, Akitomo Tachibana (Kyoto Univ., Japan)
Page	pp. 133 - 134

Friday, November 7, 2008

Session S6 Reliability
Time: 9:00 - 10:10 Friday, November 7, 2008
Chairs: Shimpei Tsujikawa (Sony, Japan), Mariko Takayanagi (Toshiba America Electronic Components, United States)

S6-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) TDDB Reliability of High-k Stacked Gate Dielectrics
Author	*Kenji Okada (MIRAI-ASET, Japan), Tsuyoshi Horikawa (MIRAI-ASRC, AIST, Japan), Hideki Satake, Masashi Takahashi (MIRAI-ASET, Japan), Seiji Inumiya, Yasushi Akasaka, Fumio Ootsuka, Yasuo Nara (Selete, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (MIRAI-ASRC, AIST/Univ. of Tokyo, Japan)
Page	pp. 135 - 136

S6-2 (Time: 9:30 - 9:50)

Title	Systematic Study on Bias Temperature Instability of Various Hf-Based Oxides ; HfO₂, (Hf,Al)O_y and (Hf,Zr)O_z
Author	*Hyung-Suk Jung, Tae Joo Park, Jeong Hwan Kim, Sang Young Lee, Kwang Duck Na (Seoul National Univ., Republic of Korea), Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee (Samsung Electronics Co., Ltd., Republic of Korea), Cheol Seong Hwang (Seoul National Univ., Republic of Korea)
Page	pp. 137 - 138

S6-3 (Time: 9:50 - 10:10)

Title	Impact of Mg Incorporation into the HfSiON Gate Dielectrics on the Performance, PBTI and TDDB
Author	*Motoyuki Sato, Toshihide Nabatame, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete, Japan)
Page	pp. 139 - 140

Session S7 Modeling and Simulations / Oxide Growth
Time: 10:30 - 12:20 Friday, November 7, 2008
Chairs: Yuji Takakuwa (Tohoku Univ., Japan), Kenji Shiraishi (Tsukuba Univ., Japan)

S7-1 (Time: 10:30 - 11:00)

Title	(Invited Paper) Structure and Properties of Defects in HfO₂ and at Interfaces with SiO₂
Author	David Munoz Ramo (Univ. College London, Great Britain), Jacob Gavartin (Accelrys Ltd, Great Britain), Peter Sushko, *Alexander Shluger (Univ. College London/Tohoku Univ., Great Britain)
Page	pp. 141 - 142

S7-2 (Time: 11:00 - 11:20)

Title	Relationship between the Dipole Moment Induced in Photoemission Process and the Optical Dielectric Constant
Author	*Kazuyuki Hirose, Daisuke Kobayashi (JAXA, Japan), Haruhiko Suzuki, Satoshi Igarashi, Hiroshi Nohira (Musashi Inst. of Tech., Japan)
Page	pp. 143 - 144

S7-3 (Time: 11:20 - 11:40)

Title	Application of Franz Dispersion Relation in Simulations of Tunneling Transport in MIS and SONOS/TANOS Structures
Author	*Mikhail I. Vexler, Angelika Kuligk, Bernd Meinerzhagen (TU Braunschweig, Institut fuer Elektronische Bauelemente und Schaltungstechnik, Germany)
Page	pp. 145 - 146

S7-4 (Time: 11:40 - 12:00)

Title	Reaction Mechanisms of H₂O Molecules at SiO₂/Si Interfaces during Silicon Thermal Oxidation
Author	*Toru Akiyama (Mie Univ., Japan), Hiroyuki Kageshima (NTT, Japan), Masashi Uematsu (Keio Univ., Japan), Tomonori Ito (Mie Univ., Japan)
Page	pp. 147 - 148

S7-5 (Time: 12:00 - 12:20)

Title	Thermodynamics and Kinetics of Thermal Oxidation of Ge in High Pressure Oxygen
Author	*Kosuke Nagashio, Koji Kita, C. H. Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 149 - 150

Session S8 Resistive RAM
Time: 13:40 - 14:50 Friday, November 7, 2008
Chairs: Toyohiro Chikyo (NIMS, Japan), Cheol Seong Hwang (Seoul National Univ., Republic of Korea)

S8-1 (Time: 13:40 - 14:10)

Title	(Invited Paper) Mechanisms of Resistive Switching and Memory Effects in Transition Metal Oxides
Author	*Akihito Sawa (AIST, Japan)
Page	pp. 151 - 152

S8-2 (Time: 14:10 - 14:30)

Title	Electric-Field-Induced Resistance Switching at Metal/Insulator Interface toward Resistance RAM
Author	*Isao Ohkubo, Takayuki Harada, Kenta Tsubouchi, Genya Sugano, Hiroshi Kumigashira, Tsuyoshi Ohnishi, Mikk Lippmaa (Univ. of Tokyo, Japan), Yuji Matsumoto (Tokyo Inst. of Tech., Japan), Hideomi Koinuma (National Inst. for Materials Science, Japan), Masaharu Oshima (Univ. of Tokyo, Japan)
Page	pp. 153 - 154

S8-3 (Time: 14:30 - 14:50)

Title	Switchable Pt/TiO_x/Pt Schottky Diodes
Author	*Ni Zhong, Hisashi Shima, Hiro Akinaga (AIST/JST, Japan)
Page	pp. 155 - 156

Session S9 High-k/Metal Gate -3
Time: 15:10 - 16:40 Friday, November 7, 2008
Chairs: Yasushi Akasaka (Tokyo Electron, Japan), Matt Copel (IBM, United States)

S9-1 (Time: 15:10 - 15:40)

Title	(Invited Paper) Structural Evolution and Electrical Properties of Al-Doped ALD HfO₂ Thin Films and PEALD TaCxNy Metal Gate
Author	Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Sang Young Lee, Hyung Suk Jung, Miyoung Kim, *Cheol Seong Hwang (Seoul National Univ., Republic of Korea), Gee-Man Kim, Kang Jun Choi, Jae Ho Choi, Jae Hak Jeong (Quros, Republic of Korea)
Page	pp. 157 - 158

S9-2 (Time: 15:40 - 16:00)

Title	The Fabrication and Characterization of Metal-Oxide-Silicon Capacitors and Field-Effect Transistors Using LaAlO₃ Gate Dielectric
Author	Ingram Yin-ku Chang, Sheng-wen You, Main-gwo Chen, *Joseph Ya-min Lee (Tsing-Hua Univ., Taiwan)
Page	pp. 159 - 160

S9-3 (Time: 16:00 - 16:20)

Title	Novel Work Function Control Technique for Single Metal/Single High-k Gate Stacks
Author	*T. Hayashi, S. Sakashita, M. Mizutani, S. Yamanari, T. Kawahara, M. Inoue, J. Yugami, K. Shiga, N. Murata, Y. Yamamoto, S. Endo, K. Sato, Y. Nishida, A. Shimizu, F. Otsuka, T. Yamashita, H. Oda, Y. Inoue (Renesas Technology Corp., Japan)
Page	pp. 161 - 162

S9-4 (Time: 16:20 - 16:40)

Title	Dual Metal Gate Integration for CMOS FinFETs Using Selective Formation of Ta/Mo Interdiffused Gates
Author	*Takashi Matsukawa, Kazuhiko Endo, Yuki Ishikawa, Hiromi Yamauchi, Yongxun Liu, Junichi Tsukada, Kenichi Ishii, Shin-ichi O'uchi, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara (Nanoelectronics Research Inst., AIST, Japan)
Page	pp. 163 - 164

International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY Technical Program

Session Schedule

List of Papers

International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY
Technical Program