International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY
Author Index

Table of Contents:   A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  R  S  T  U  V  W  Y  Z  

A

Ahmet, Parhat (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Ahmet, Parhat (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Ai, Chi Fong (Institution of Nuclear Energy Research)   p. 21 (P1-2)
Akahane, Tadashi (Nagaoka Univ. of Tech.)   p. 91 (P2-3)
Akasaka, Yasushi (Selete)   p. 135 (S6-1)
Akinaga, Hiro (AIST/JST)   p. 155 (S8-3)
Akiyama, Toru (Mie Univ.)   p. 59 (P1-21)
Akiyama, Toru (Mie Univ.)   p. 147 (S7-4)
Anma, Masatoshi (Renesas Technology Corp.)   p. 37 (P1-10)
Aoyama, Takayuki (Selete)   p. 139 (S6-3)
Asano, Akira (Nagaoka Univ. of Tech.)   p. 91 (P2-3)

B

Banerjee, Writam (Chang Gung Univ.)   p. 15 (S2-2)
Bera, M. K. (Seoul National Univ.)   p. 119 (P2-17)
Bera, M.K. (Seoul National Univ.)   p. 121 (P2-18)
Bera, M.K. (Seoul National Univ.)   p. 125 (P2-20)
Bera, Milan Kumar (Seoul National Univ.)   p. 113 (P2-14)
Bersuker, G. (SEMATECH)   p. 5 (S1-1)
Biesemans, Serge (IMEC)   p. 3 (K-2)
Bose, P. K. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Bose, P. K. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Buchanan, Keith (Aviza Technology)   p. 45 (P1-14)

C

Chakraborty, A. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Chakraborty, A. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Chakraborty, P. (Indian Inst. of Tech., Kharagpur)   p. 113 (P2-14)
Chang, Chih-Hsin (Chang Gung Univ.)   p. 17 (S2-3)
Chang, Ingram Yin-ku (Tsing-Hua Univ.)   p. 47 (P1-15)
Chang, Ingram Yin-ku (Tsing-Hua Univ.)   p. 159 (S9-2)
Chang, Kow Ming (National Chiao Tung Univ.)   p. 49 (P1-16)
Chang, Liann. Be (Chang Gung Univ.)   p. 15 (S2-2)
Chang, You Min (R&D Center FST)   p. 97 (P2-6)
Chang, You Min (FST)   p. 99 (P2-7)
Chatterjee, I. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Chatterjee, I. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Chatterjee, I. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Chen, Chun-Heng (Tsing-Hua Univ.)   p. 47 (P1-15)
Chen, Jun (National Inst. for Materials Science)   p. 65 (S3-3)
Chen, Main-gwo (National Tsing-Hua Univ.)   p. 129 (P2-22)
Chen, Main-gwo (Tsing-Hua Univ.)   p. 159 (S9-2)
Chen, Pang Shiu (MingShin Univ. of Science and Tech.)   p. 49 (P1-16)
Cheng, Jian-Wei (Chang Gung Univ.)   p. 35 (P1-9)
Chi, D. Z. (Institute of Materials Research and Engineering)   p. 77 (S5-1)
Chikyow, Toyohiro (National Inst. for Materials Science)   p. 65 (S3-3)
Cho, Hag-Ju (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Choi, Jae Ho (Quros)   p. 157 (S9-1)
Choi, Kang Jun (Quros)   p. 157 (S9-1)
Chou, Pai-Chi (Chang Gung Univ.)   p. 117 (P2-16)
Chou, Patrick (Chang Gung Univ.)   p. 17 (S2-3)
Chung, Haeyang (Kyung Hee Univ./R&D Center FST)   p. 97 (P2-6)
Chung, Haeyang (Kyung Hee Univ., FST)   p. 99 (P2-7)
Copel, Matt (IBM)   p. 61 (S3-1)

D

Das, Atanu (Chang Gung Univ.)   p. 15 (S2-2)
Das, P. S. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Das, P.S. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Das, Partha Sarathi (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Das, T. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Das, T. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Das, Tanmoy (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)

E

Endo, Kazuhiko (AIST)   p. 39 (P1-11)
Endo, Kazuhiko (AIST)   p. 41 (P1-12)
Endo, Kazuhiko (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Endo, S. (Renesas Technology Corp.)   p. 161 (S9-3)

F

Fan, Kung Ming (Chang Gung Univ.)   p. 21 (P1-2)
Fang, Yu-Ching (Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division)   p. 117 (P2-16)
Fukata, Naoki (National Inst. for Materials Science)   p. 65 (S3-3)
Fukuda, Natsuki (ULVAC, Inc.)   p. 101 (P2-8)
Fukuda, Yukio (Tokyo Univ. of Science Suwa)   p. 107 (P2-11)
Fukushima, Akinori (Kyoto Univ.)   p. 133 (P2-24)
Furukawa, Ryosuke (Tokyo Inst. of Tech./Musashi Inst. of Tech.)   p. 67 (S3-4)
Furumai, Kohei (Nagoya Univ.)   p. 43 (P1-13)

G

Gavartin, Jacob (Accelrys Ltd)   p. 141 (S7-1)

H

Harada, Takayuki (Univ. of Tokyo)   p. 153 (S8-2)
Haruyama, Yuichi (Univ. of Hyogo)   p. 109 (P2-12)
Hasumi, Masahiko (Tokyo Univ. of Agri. and Tech.)   p. 33 (P1-8)
Hasumi, Masahiko (Tokyo Univ. of Agri. and Tech.)   p. 107 (P2-11)
Hasunuma, Ryu (Tsukuba Research Center for Interdisciplinary Materials Science)   p. 31 (P1-7)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 65 (S3-3)
Hasunuma, Ryu (Univ. of Tsukuba/TIMS)   p. 93 (P2-4)
Hasunuma, Ryu (Tsukuba Research Center for Interdisciplinary Materials Science)   p. 95 (P2-5)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 123 (P2-19)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 127 (P2-21)
Hattori, Takeo (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Hattori, Takeo (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Hayashi, T. (Renesas Technology Corp.)   p. 161 (S9-3)
Hayashi, Tomohiro (Univ. of Tsukuba)   p. 31 (P1-7)
Hayashi, Tomohiro (Univ. of Tsukuba)   p. 95 (P2-5)
Hayashi, Yusuke (Univ. of Tsukuba)   p. 93 (P2-4)
Hayashida, Tetsuro (Meiji Univ.)   p. 39 (P1-11)
Hayashida, Tetsuro (Meiji Univ.)   p. 41 (P1-12)
Heh, D. (SEMATECH)   p. 5 (S1-1)
Higashi, Seiichiro (Hiroshima Univ.)   p. 25 (P1-4)
Hirose, Kazuyuki (JAXA)   p. 143 (S7-2)
Hong, Hyung-Seok (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Hong, Lu (Nagaoka Univ. of Tech.)   p. 91 (P2-3)
Hong, Sug-Hun (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Horikawa, Tsuyoshi (MIRAI-ASRC, AIST)   p. 135 (S6-1)
Hosoi, Takuji (Osaka Univ.)   p. 53 (P1-18)
Hosoi, Takuji (Osaka Univ.)   p. 63 (S3-2)
Hota, M. K. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Hota, M. K. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Hota, M. K. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Hou, Sung-Ju (Chang Gung Univ.)   p. 35 (P1-9)
Hsu, Jordan Chun-Hsien (Tsing-Hua Univ.)   p. 47 (P1-15)
Hsu, Li (Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division)   p. 117 (P2-16)
Hu, Chia-Wei (Chang Gung Univ.)   p. 115 (P2-15)
Huang, Shang Feng (Institution of Nuclear Energy Research)   p. 21 (P1-2)
Huang, Tz-An (Chang Gung Univ.)   p. 51 (P1-17)
Hwang, Cheol Seong (Seoul National Univ.)   p. 137 (S6-2)
Hwang, Cheol Seong (Seoul National Univ.)   p. 157 (S9-1)
Hyun, Sangjin (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)

I

Ichimura, Shingo (AIST)   p. 87 (P2-1)
Ichimura, Shingo (AIST)   p. 89 (P2-2)
Igarashi, Satoshi (Musashi Inst. of Tech.)   p. 143 (S7-2)
Inoue, M. (Renesas Technology Corp.)   p. 161 (S9-3)
Inoue, Masao (Renesas Technology Corp.)   p. 37 (P1-10)
Inoue, Tomoyuki (Osaka Univ.)   p. 53 (P1-18)
Inoue, Y. (Renesas Technology Corp.)   p. 161 (S9-3)
Inumiya, Seiji (Selete)   p. 135 (S6-1)
Ishii, Kenichi (AIST)   p. 39 (P1-11)
Ishii, Kenichi (AIST)   p. 41 (P1-12)
Ishii, Kenichi (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Ishikawa, Yuki (AIST)   p. 39 (P1-11)
Ishikawa, Yuki (AIST)   p. 41 (P1-12)
Ishikawa, Yuki (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Ito, Tomonori (Mie Univ.)   p. 59 (P1-21)
Ito, Tomonori (Mie Univ.)   p. 147 (S7-4)
Iwai, Hiroshi (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Iwai, Hiroshi (Tokyo Inst. of Tech.)   p. 29 (P1-6)
Iwai, Hiroshi (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Iwai, Hiroshi (Tokyo Inst. of Tech.)   p. 83 (S5-4)
Iwamoto, Masaya (Tohoku Univ.)   p. 131 (P2-23)
Iwazaki, Yoshitaka (Tokyo Univ. of Agri. and Tech.)   p. 33 (P1-8)
Iwazaki, Yoshitaka (Tokyo Univ. of Agri. and Tech.)   p. 107 (P2-11)

J

Jammy, R. (SEMATECH)   p. 5 (S1-1)
Jang, Jae Hyuck (Seoul National Univ.)   p. 157 (S9-1)
Jeong, Jae Hak (Quros)   p. 157 (S9-1)
Jimbo, Takehito (ULVAC, Inc.)   p. 101 (P2-8)
Jinbo, Kazuo (Nagaoka National College of Tech.)   p. 91 (P2-3)
Ju, Shin-chun (Mingchi Univ. of Tech.)   p. 129 (P2-22)
Juan, Pi-chun (Mingchi Univ. of Tech.)   p. 129 (P2-22)
Jung, Hyung Suk (Seoul National Univ.)   p. 157 (S9-1)
Jung, Hyung-Suk (Seoul National Univ.)   p. 137 (S6-2)

K

Kadoshima, Masaru (Selete)   p. 75 (S4-4)
Kageshima, Hiroyuki (NTT)   p. 59 (P1-21)
Kageshima, Hiroyuki (NTT)   p. 147 (S7-4)
Kakushima, Kuniyuki (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Kakushima, Kuniyuki (Tokyo Inst. of Tech.)   p. 29 (P1-6)
Kakushima, Kuniyuki (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Kakushima, Kuniyuki (Tokyo Inst. of Tech.)   p. 83 (S5-4)
Kameda, Naoto (Meidensha Corp./AIST)   p. 87 (P2-1)
Kameda, Naoto (Meidensha Corp./AIST)   p. 89 (P2-2)
Kanda, Kazuhiro (Univ. of Hyogo)   p. 109 (P2-12)
Kang, C. Y. (SEMATECH)   p. 5 (S1-1)
Kang, Ting-Kuo (Cheng Shiu Univ.)   p. 111 (P2-13)
Kanme, Daisuke (Hiroshima Univ.)   p. 25 (P1-4)
Katagiri, Hironori (Nagaoka National College of Tech.)   p. 91 (P2-3)
Kato, Ryosuke (Nagoya Univ.)   p. 105 (P2-10)
Kawahara, T. (Renesas Technology Corp.)   p. 161 (S9-3)
Kawahara, Takaaki (Renesas Technology Corp.)   p. 37 (P1-10)
Kawazoe, Yoshiyuki (Tohoku Univ.)   p. 131 (P2-23)
Kekura, Mitsuru (Meidensha Corp.)   p. 87 (P2-1)
Kekura, Mitsuru (Meidensha Corp.)   p. 89 (P2-2)
Kikuchi, Shin (ULVAC, Inc.)   p. 101 (P2-8)
Kim, Dong Hak (Kyung Hee Univ.)   p. 97 (P2-6)
Kim, Dong Hak (Kyung Hee Univ.)   p. 99 (P2-7)
Kim, Gee-Man (Quros)   p. 157 (S9-1)
Kim, Jeong Hwan (Seoul National Univ.)   p. 137 (S6-2)
Kim, Jeong Hwan (Seoul National Univ.)   p. 157 (S9-1)
Kim, Miyoung (Seoul National Univ.)   p. 157 (S9-1)
Kim, Sung-Tae (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Kim, Weon-Hong (Samsung Electronics Co., Ltd.)   p. 137 (S6-2)
Kimura, Isao (ULVAC, Inc.)   p. 101 (P2-8)
Kimura, Kenji (Kyoto Univ.)   p. 55 (P1-19)
Kinoshita, Atsuhiro (Toshiba Corp.)   p. 71 (S4-2)
Kita, Koji (Univ. of Tokyo)   p. 11 (S1-4)
Kita, Koji (Univ. of Tokyo)   p. 27 (P1-5)
Kita, Koji (Univ. of Tokyo)   p. 81 (S5-3)
Kita, Koji (Univ. of Tokyo)   p. 149 (S7-5)
Kitamura, Koji (Musashi Inst. of Tech.)   p. 67 (S3-4)
Kitamura, Kouji (Musashi Inst. of Tech.)   p. 29 (P1-6)
Kobayashi, Daisuke (JAXA)   p. 143 (S7-2)
Koinuma, Hideomi (National Inst. for Materials Science)   p. 153 (S8-2)
Kondo, Hiroki (Nagoya Univ.)   p. 43 (P1-13)
Kondo, Hiroki (Nagoya Univ.)   p. 105 (P2-10)
Kosemura, Daisuke (Meiji Univ.)   p. 85 (S5-5)
Koyama, Masato (Toshiba Corp.)   p. 71 (S4-2)
Koyanagi, Tomotsune (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Kuligk, Angelika (TU Braunschweig, Institut fuer Elektronische Bauelemente und Schaltungstechnik)   p. 145 (S7-3)
Kumigashira, Hiroshi (Univ. of Tokyo)   p. 153 (S8-2)
Kuo, Chia-Ming (Cheng Shiu Univ.)   p. 111 (P2-13)
Kuribayashi, Hitoshi (Fuji Electric Device Technology Co., Ltd.)   p. 123 (P2-19)
Kuribayashi, Hitoshi (Fuji Electric Device Technology Co., Ltd.)   p. 127 (P2-21)
Kuroiwa, Koichi (Tokyo Univ. of Agri. and Tech.)   p. 33 (P1-8)
Kuroiwa, Koichi (Tokyo Univ. of Agri. and Tech.)   p. 107 (P2-11)
Kuroki, Yuichiro (Nagaoka Univ. of Tech.)   p. 91 (P2-3)
Kutsuki, Katsuhiro (Osaka Univ.)   p. 63 (S3-2)
Kwong, D. L. (Institute of Microelectronics)   p. 77 (S5-1)
Kyogoku, Shinya (Nagoya Univ.)   p. 105 (P2-10)

L

Lai, Chao Sung (Chang Gung Univ.)   p. 21 (P1-2)
Lai, Chao-Sung (Chang Gung Univ.)   p. 17 (S2-3)
Lai, Chao-Sung (Chang Gung Univ.)   p. 51 (P1-17)
Lai, Chao-Sung (Chang Gung Univ.)   p. 117 (P2-16)
Lee, Byoung Hun (SEMATECH)   p. 5 (S1-1)
Lee, C. H. (Univ. of Tokyo)   p. 149 (S7-5)
Lee, Choong Hyun (Univ. of Tokyo)   p. 11 (S1-4)
Lee, Choong Hyun (Univ. of Tokyo)   p. 81 (S5-3)
Lee, Heng Yuan (Industrial Technology Research Institute)   p. 49 (P1-16)
Lee, Hye-Lan (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Lee, Joseph Ya-min (Tsing-Hua Univ.)   p. 47 (P1-15)
Lee, Joseph Ya-min (Tsing-Hua Univ.)   p. 159 (S9-2)
Lee, Nae-In (Samsung Electronics Co., Ltd.)   p. 137 (S6-2)
Lee, Sang Young (Seoul National Univ.)   p. 137 (S6-2)
Lee, Sang Young (Seoul National Univ.)   p. 157 (S9-1)
Lee, Sungjoo (National Univ. of Singapore)   p. 77 (S5-1)
Lee, Won-Seong (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Lee, Yeonghun (Tokyo Inst. of Tech.)   p. 83 (S5-4)
Li, Zhi-Hong (Chang Gung Univ.)   p. 115 (P2-15)
Lim, Daeyoung (Kyung Hee Univ.)   p. 97 (P2-6)
Lim, Daeyoung (Kyung Hee Univ.)   p. 99 (P2-7)
Lima, Paulo (Aviza Technology)   p. 45 (P1-14)
Lin, Cheng-Li (Feng Chia Univ.)   p. 129 (P2-22)
Lin, J. Q. (National Univ. of Singapore)   p. 77 (S5-1)
Lin, Jin Ping (Nayan Technology Corp.)   p. 49 (P1-16)
Lippmaa, Mikk (Univ. of Tokyo)   p. 153 (S8-2)
Liu, Chuan-Hsi (National Taiwan Normal Univ.)   p. 129 (P2-22)
Liu, Kow-Chen (Chang Gung Univ.)   p. 49 (P1-16)
Liu, Li-Chi (Chang Gung Univ.)   p. 117 (P2-16)
Liu, Yongxun (AIST)   p. 39 (P1-11)
Liu, Yongxun (AIST)   p. 41 (P1-12)
Liu, Yongxun (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Lo, Chen Yu (Chang Gung Univ.)   p. 21 (P1-2)
Lo, G. Q. (Institute of Microelectronics)   p. 77 (S5-1)
Lo, Jie-Tin (Chang Gung Univ.)   p. 115 (P2-15)
Lu, Jong-hong (Mingchi Univ. of Tech.)   p. 129 (P2-22)
Lu, Zhao (Univ. of Tsukuba)   p. 123 (P2-19)

M

Macneil, John (Aviza Technology)   p. 45 (P1-14)
Mahajan, Ashok M. (North Maharashtra Univ., Jalgaon)   p. 103 (P2-9)
Mahata, C. (Indian Inst. of Tech., Kharagpur)   p. 113 (P2-14)
Mahata, C. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Mahata, C. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Mahata, Chandreswar (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Mahato, S. S. (Indian Inst. of Tech., Kharagpur)   p. 113 (P2-14)
Maikap, Siddheswar (Chang Gung Univ.)   p. 15 (S2-2)
Maiti, C. K. (Indian Inst. of Tech., Kharagpur)   p. 113 (P2-14)
Maiti, C. K. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Maiti, C. K. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Maiti, C.K. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Maiti, T. K. (Indian Inst. of Tech., Kharagpur)   p. 113 (P2-14)
Majhi, B. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Majhi, B. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Majhi, B. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Mallik, S. (Indian Inst. of Tech., Kharagpur)   p. 119 (P2-17)
Mallik, S. (Indian Inst. of Tech., Kharagpur)   p. 121 (P2-18)
Mallik, S. (Indian Inst. of Tech., Kharagpur)   p. 125 (P2-20)
Masahara, Meishoku (AIST)   p. 39 (P1-11)
Masahara, Meishoku (AIST)   p. 41 (P1-12)
Masahara, Meishoku (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Matsui, Shinji (Univ. of Hyogo)   p. 109 (P2-12)
Matsukawa, Takashi (AIST)   p. 39 (P1-11)
Matsukawa, Takashi (AIST)   p. 41 (P1-12)
Matsukawa, Takashi (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Matsumoto, Yuji (Tokyo Inst. of Tech.)   p. 153 (S8-2)
Matsuyama, Seiji (Matsushita Electric Industrial Co., Ltd.)   p. 37 (P1-10)
Meinerzhagen, Bernd (TU Braunschweig, Institut fuer Elektronische Bauelemente und Schaltungstechnik)   p. 145 (S7-3)
Migita, Shinji (MIRAI-ASRC, AIST)   p. 7 (S1-2)
Mitsuhashi, Riichirou (Matsushita Electric Industrial Co., Ltd.)   p. 37 (P1-10)
Miura, Toshinori (Meidensha Corp.)   p. 89 (P2-2)
Miyamoto, Kazuaki (Nagoya Univ.)   p. 43 (P1-13)
Miyata, Noriyuki (AIST)   p. 79 (S5-2)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 25 (P1-4)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 75 (S4-4)
Mizutani, M. (Renesas Technology Corp.)   p. 161 (S9-3)
Mizutani, Masaharu (Renesas Technology Corp.)   p. 37 (P1-10)
Mohamed, Nurbaizura (Tokyo Univ. of Agri. and Tech.)   p. 107 (P2-11)
Moon, Joo-Tae (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Mori, Taiki (Hiroshima Univ.)   p. 75 (S4-4)
Morikawa, Yoshiki (Meidensha Corp.)   p. 87 (P2-1)
Muraji, Yuichi (Toray Research Center, Inc.)   p. 109 (P2-12)
Murakami, Hideki (Hiroshima Univ.)   p. 25 (P1-4)
Murakami, Hideki (Hiroshima Univ.)   p. 75 (S4-4)
Murata, N. (Renesas Technology Corp.)   p. 161 (S9-3)
Murata, Naofumi (Renesas Technology Corp.)   p. 37 (P1-10)

N

Na, Hoon-Joo (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Na, Kwang Duck (Seoul National Univ.)   p. 137 (S6-2)
Na, Kwang Duk (Seoul National Univ.)   p. 157 (S9-1)
Nabatame, Toshihide (MIRAI-ASET)   p. 7 (S1-2)
Nabatame, Toshihide (MIRAI-ASET)   p. 135 (S6-1)
Nabatame, Toshihide (Selete)   p. 139 (S6-3)
Nagashio, Kosuke (Univ. of Tokyo)   p. 81 (S5-3)
Nagashio, Kosuke (Univ. of Tokyo)   p. 149 (S7-5)
Nagata, Takahiro (Univ. of Tsukuba)   p. 83 (S5-4)
Nakajima, Kaoru (Kyoto Univ.)   p. 55 (P1-19)
Nara, Yasuo (Selete)   p. 65 (S3-3)
Nara, Yasuo (Selete)   p. 75 (S4-4)
Nara, Yasuo (Selete)   p. 135 (S6-1)
Nara, Yasuo (Selete)   p. 139 (S6-3)
Nishida, Y. (Renesas Technology Corp.)   p. 161 (S9-3)
Nishida, Yukio (Renesas Technology Corp.)   p. 37 (P1-10)
Nishiguchi, Tetsuya (Meidensha Corp./AIST)   p. 87 (P2-1)
Nishiguchi, Tetsuya (Meidensha Corp./AIST)   p. 89 (P2-2)
Nishimatsu, Takeshi (Tohoku Univ.)   p. 131 (P2-23)
Nishimura, Tomonori (Univ. of Tokyo)   p. 81 (S5-3)
Nishimura, Tomonori (Univ. of Tokyo)   p. 149 (S7-5)
Nishioka, Yutaka (ULVAC, Inc.)   p. 101 (P2-8)
Nohira, Hiroshi (Musashi Inst. of Tech.)   p. 29 (P1-6)
Nohira, Hiroshi (Musashi Inst. of Tech.)   p. 67 (S3-4)
Nohira, Hiroshi (Musashi Inst. of Tech.)   p. 143 (S7-2)
Nonaka, Hidehiko (AIST)   p. 87 (P2-1)
Nonaka, Hidehiko (AIST)   p. 89 (P2-2)

O

O'uchi, Shin-ichi (AIST)   p. 41 (P1-12)
O'uchi, Shin-ichi (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
O'uchi, Shinichi (AIST)   p. 39 (P1-11)
Oda, H. (Renesas Technology Corp.)   p. 161 (S9-3)
Oda, Shunri (Tokyo Inst. of Tech.)   p. 67 (S3-4)
Ogawa, Shingo (Toray Research Center, Inc.)   p. 27 (P1-5)
Ogawa, Shingo (Toray Research Center, Inc.)   p. 109 (P2-12)
ogino, Masaaki (Fuji Electric Device Technology Co., Ltd.)   p. 123 (P2-19)
Ogino, Masaaki (Fuji Electric Device Technology Co., Ltd.)   p. 127 (P2-21)
Ogura, Atsushi (Meiji Univ.)   p. 39 (P1-11)
Ogura, Atsushi (Meiji Univ.)   p. 41 (P1-12)
Ogura, Atsushi (Meiji Univ.)   p. 85 (S5-5)
Oh, H. J. (National Univ. of Singapore)   p. 77 (S5-1)
Ohdomari, Iwao (Waseda Univ.)   p. 57 (P1-20)
Ohdomari, Iwao (Waseda Univ.)   p. 85 (S5-5)
Ohji, Yuzuru (Selete)   p. 139 (S6-3)
Ohkubo, Isao (Univ. of Tokyo)   p. 153 (S8-2)
Ohmi, Shun-ichiro (Tokyo Inst. of Tech.)   p. 23 (P1-3)
Ohmori, Kenji (Selete)   p. 95 (P2-5)
Ohnishi, Tsuyoshi (Univ. of Tokyo)   p. 153 (S8-2)
Ohsawa, Keichiro (Univ. of Tsukuba)   p. 93 (P2-4)
ohta, Akio (Hiroshima Univ.)   p. 25 (P1-4)
Ohta, Akio (Hiroshima Univ.)   p. 75 (S4-4)
Ohtake, Akihiro (National Inst. for Materials Science)   p. 79 (S5-2)
Okada, Kenji (MIRAI-ASET)   p. 135 (S6-1)
Okamoto, Gaku (Osaka Univ.)   p. 63 (S3-2)
Okamoto, Koichi (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Okamoto, Kouichi (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Okamoto, Yuki (Osaka Univ.)   p. 53 (P1-18)
Onda, Tomoya (Waseda Univ.)   p. 57 (P1-20)
Oniki, Yusuke (Tokyo Univ. of Agri. and Tech.)   p. 33 (P1-8)
Ootsuka, Fumio (Selete)   p. 135 (S6-1)
Oshima, Masaharu (Univ. of Tokyo)   p. 153 (S8-2)
Ota, Hiroyuki (MIRAI-ASRC, AIST)   p. 7 (S1-2)
Ota, Hiroyuki (MIRAI-ASRC, AIST)   p. 135 (S6-1)
Otsuka, F. (Renesas Technology Corp.)   p. 161 (S9-3)

P

Pan, Tung-Ming (Chang Gung Univ.)   p. 35 (P1-9)
Pan, Tung-Ming (Chang Gung Univ.)   p. 115 (P2-15)
Park, H. (SEMATECH)   p. 5 (S1-1)
Park, Hong-Bae (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Park, Joon Won (Kyung Hee Univ.)   p. 97 (P2-6)
Park, Joon Won (Kyung Hee Univ.)   p. 99 (P2-7)
Park, Jung-Min (Samsung Electronics Co., Ltd.)   p. 137 (S6-2)
Park, Tae Joo (Seoul National Univ.)   p. 137 (S6-2)
Park, Tae Joo (Seoul National Univ.)   p. 157 (S9-1)
Patil, Anil B. (North Maharashtra Univ., Jalgaon)   p. 103 (P2-9)
Peng, Hsing-Kan (Chang Gung Univ.)   p. 51 (P1-17)
Peng, Jun-Kai (Chang Gung Univ.)   p. 115 (P2-15)

R

Ramo, David Munoz (Univ. College London)   p. 141 (S7-1)

S

Sa, Yu-Huan (Cheng Shiu Univ.)   p. 111 (P2-13)
Saito, Shigeru (Meidensha Corp.)   p. 89 (P2-2)
Sakamoto, Kunihiro (AIST)   p. 39 (P1-11)
Sakamoto, Kunihiro (AIST)   p. 41 (P1-12)
Sakamoto, Kunihiro (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Sakashita, Mitsuo (Nagoya Univ.)   p. 105 (P2-10)
Sakashita, S. (Renesas Technology Corp.)   p. 161 (S9-3)
Sakashita, Shinsuke (Renesas Technology Corp.)   p. 37 (P1-10)
Sano, Takahiro (Tokyo Inst. of Tech.)   p. 23 (P1-3)
Sasakawa, Kaoru (Kobelco Res. Inst. Inc.)   p. 55 (P1-19)
Satake, Hideki (MIRAI-ASET)   p. 135 (S6-1)
Sato, K. (Renesas Technology Corp.)   p. 161 (S9-3)
Sato, Motoyuki (Selete)   p. 31 (P1-7)
Sato, Motoyuki (Selete)   p. 65 (S3-3)
Sato, Motoyuki (Selete)   p. 139 (S6-3)
Satoh, Yoshihiro (Matsushita Electric Industrial Co., Ltd.)   p. 37 (P1-10)
Sawa, Akihito (AIST)   p. 151 (S8-1)
Seike, Aya (Waseda Univ.)   p. 85 (S5-5)
Seikh, Ziaur Rahaman (Chang Gung Univ.)   p. 15 (S2-2)
Seki, Hirofumi (Toray Research Center, Inc.)   p. 27 (P1-5)
Sekiguchi, Takashi (National Inst. for Materials Science)   p. 65 (S3-3)
Senami, Masato (Kyoto Univ.)   p. 133 (P2-24)
Shiga, K. (Renesas Technology Corp.)   p. 161 (S9-3)
Shima, Hisashi (AIST/JST)   p. 155 (S8-3)
Shimizu, A. (Renesas Technology Corp.)   p. 161 (S9-3)
Shimura, Takayoshi (Osaka Univ.)   p. 53 (P1-18)
Shimura, Takayoshi (Osaka Univ.)   p. 63 (S3-2)
Shin, Yu-Gyun (Samsung Electronics Co., Ltd.)   p. 13 (S2-1)
Shiraishi, Kenji (Univ. of Tsukuba)   p. 83 (S5-4)
Shluger, Alexander (Univ. College London/Tohoku Univ.)   p. 141 (S7-1)
Sometani, Mitsuru (Univ. of Tsukuba)   p. 127 (P2-21)
Song, Min-Woo (Samsung Electronics Co., Ltd.)   p. 137 (S6-2)
Sugahara, Yoshiyuki (Fuji Electric Device Technology Co., Ltd.)   p. 123 (P2-19)
Sugahara, Yoshiyuki (Fuji Electric Device Technology Co., Ltd.)   p. 127 (P2-21)
Sugano, Genya (Univ. of Tokyo)   p. 153 (S8-2)
Sugii, Nobuyuki (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Sugii, Nobuyuki (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Sugiyama, Naoyuki (Toray Research Center, Inc.)   p. 27 (P1-5)
Sushko, Peter (Univ. College London/Tohoku Univ.)   p. 141 (S7-1)
Suu, Koukou (ULVAC, Inc.)   p. 101 (P2-8)
Suzuki, Eiichi (AIST)   p. 39 (P1-11)
Suzuki, Eiichi (AIST)   p. 41 (P1-12)
Suzuki, Eiichi (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Suzuki, Haruhiko (Musashi Inst. of Tech.)   p. 143 (S7-2)
Suzuki, Masamichi (Toshiba Corp.)   p. 71 (S4-2)
Suzuki, Motofumi (Kyoto Univ.)   p. 55 (P1-19)

T

Tabata, Toshiyuki (Univ. of Tokyo)   p. 11 (S1-4)
Tachi, Kiichi (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Tachi, Kiichi (Tokyo Inst. of Tech.)   p. 29 (P1-6)
Tachi, Kiichi (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Tachibana, Akitomo (Kyoto Univ.)   p. 133 (P2-24)
Takahashi, Masashi (MIRAI-ASET)   p. 135 (S6-1)
Takase, Masami (National Inst. for Materials Science)   p. 65 (S3-3)
Takata, Masasuke (Nagaoka Univ. of Tech.)   p. 91 (P2-3)
Takayanagi, Mariko (Toshiba America Electronic Components, Inc.)   p. 69 (S4-1)
Takeshima, Yutaka (Renesas Technology Corp.)   p. 37 (P1-10)
Tamura, Chihiro (Univ. of Tsukuba)   p. 31 (P1-7)
Tamura, Chihiro (Univ. of Tsukuba)   p. 95 (P2-5)
Teraoka, Yuden (Japan Atomic Energy Agency)   p. 19 (P1-1)
Toriumi, Akira (MIRAI-ASRC, AIST/Univ. of Tokyo)   p. 7 (S1-2)
Toriumi, Akira (Univ. of Tokyo)   p. 11 (S1-4)
Toriumi, Akira (Univ. of Tokyo)   p. 81 (S5-3)
Toriumi, Akira (MIRAI-ASRC, AIST/Univ. of Tokyo)   p. 135 (S6-1)
Toriumi, Akira (Univ. of Tokyo)   p. 149 (S7-5)
Trowell, Robert (Aviza Technology)   p. 45 (P1-14)
Tsai, Meng-Han (Chang Gung Univ.)   p. 115 (P2-15)
Tsai, Ming Jinn (Industrial Technology Research Institute)   p. 49 (P1-16)
Tsai, Wen Fa (Institution of Nuclear Energy Research)   p. 21 (P1-2)
Tseng, H. (SEMATECH)   p. 5 (S1-1)
Tsubouchi, Kenta (Univ. of Tokyo)   p. 153 (S8-2)
Tsuchida, Ikushin (Waseda Univ.)   p. 85 (S5-5)
Tsuchiya, Yoshishige (Tokyo Inst. of Tech./Univ. of Southampton)   p. 67 (S3-4)
Tsudumitani, Akihiko (Matsushita Electric Industrial Co., Ltd.)   p. 37 (P1-10)
Tsuji, Junichi (Toray Research Center, Inc.)   p. 27 (P1-5)
Tsuji, Junichi (Toray Research Center, Inc.)   p. 109 (P2-12)
Tsukada, Junichi (AIST)   p. 39 (P1-11)
Tsukada, Junichi (AIST)   p. 41 (P1-12)
Tsukada, Junichi (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Tsutsui, Kazuo (Tokyo Inst. of Tech.)   p. 9 (S1-3)
Tsutsui, Kazuo (Tokyo Inst. of Tech.)   p. 73 (S4-3)
Tzeng, Wen Hsien (National Chiao Tung Univ.)   p. 49 (P1-16)

U

Uematsu, Masashi (Keio Univ.)   p. 59 (P1-21)
Uematsu, Masashi (Keio Univ.)   p. 147 (S7-4)
Ueno, Tomo (Tokyo Univ. of Agri. and Tech.)   p. 33 (P1-8)
Ueno, Tomo (Tokyo Univ. of Agri. and Tech.)   p. 107 (P2-11)
Urban, Ben E. (Nagoya Univ.)   p. 43 (P1-13)

V

Vanderbilt, David (Rutgers Univ.)   p. 131 (P2-23)
Vexler, Mikhail I. (TU Braunschweig, Institut fuer Elektronische Bauelemente und Schaltungstechnik)   p. 145 (S7-3)

W

Waghmare, Umesh V. (JNCASR)   p. 131 (P2-23)
Wang, Bo-Chin (Cheng Shiu Univ.)   p. 111 (P2-13)
Wang, Hui-Chun (Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division)   p. 117 (P2-16)
Watanabe, Heiji (Osaka Univ.)   p. 53 (P1-18)
Watanabe, Heiji (Osaka Univ.)   p. 63 (S3-2)
Watanabe, Hisatsune (Selete)   p. 1 (K-1)
Watanabe, Takanobu (Waseda Univ.)   p. 57 (P1-20)
Watanabe, Takanobu (Waseda Univ.)   p. 85 (S5-5)
Watanabe, Yukimune (MIRAI-ASET)   p. 7 (S1-2)
Wu, Chung-Yi (Cheng Shiu Univ.)   p. 111 (P2-13)
Wu, San-Lein (Cheng Shiu Univ.)   p. 111 (P2-13)
Wu, Tung-Han (Chang Gung Univ.)   p. 35 (P1-9)
Wu, Woei-Cherng (Chang Gung Univ.)   p. 117 (P2-16)

Y

Yamabe, Kikuo (Tsukuba Research Center for Interdisciplinary Materials Science)   p. 31 (P1-7)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 65 (S3-3)
Yamabe, Kikuo (Univ. of Tsukuba/TIMS)   p. 93 (P2-4)
Yamabe, Kikuo (Tsukuba Research Center for Interdisciplinary Materials Science)   p. 95 (P2-5)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 123 (P2-19)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 127 (P2-21)
Yamada, Keisaku (Waseda Univ.)   p. 65 (S3-3)
Yamamoto, Takashi (Toray Research Center, Inc.)   p. 27 (P1-5)
Yamamoto, Takashi (Toray Research Center, Inc.)   p. 109 (P2-12)
Yamamoto, Y. (Renesas Technology Corp.)   p. 161 (S9-3)
Yamanari, S. (Renesas Technology Corp.)   p. 161 (S9-3)
Yamanari, Shinichi (Renesas Technology Corp.)   p. 37 (P1-10)
Yamashita, T. (Renesas Technology Corp.)   p. 161 (S9-3)
Yamauchi, Hiromi (AIST)   p. 39 (P1-11)
Yamauchi, Hiromi (AIST)   p. 41 (P1-12)
Yamauchi, Hiromi (Nanoelectronics Research Inst., AIST)   p. 163 (S9-4)
Yasuda, Tetsuji (AIST)   p. 79 (S5-2)
Yasui, Kanji (Nagaoka Univ. of Tech.)   p. 91 (P2-3)
Yeh, Wen-Wei (Chang Gung Univ.)   p. 115 (P2-15)
Yen, Li-Chen (Chang Gung Univ.)   p. 35 (P1-9)
Yoshigoe, Akitaka (Japan Atomic Energy Agency)   p. 19 (P1-1)
Yoshinaga, Hiromichi (Hiroshima Univ.)   p. 75 (S4-4)
You, Sheng-wen (Tsing-Hua Univ.)   p. 159 (S9-2)
Yougauchi, Ryo (Hiroshima Univ.)   p. 25 (P1-4)
Young, C. (SEMATECH)   p. 5 (S1-1)
Yugami, J. (Renesas Technology Corp.)   p. 161 (S9-3)
Yugami, Jiro (Renesas Technology Corp.)   p. 37 (P1-10)

Z

Zaima, Shigeaki (Nagoya Univ.)   p. 43 (P1-13)
Zaima, Shigeaki (Nagoya Univ.)   p. 105 (P2-10)
Zhong, Ni (AIST/JST)   p. 155 (S8-3)
Zhou, Yun (Aviza Technology)   p. 45 (P1-14)
Zushi, Tomofumi (Waseda Univ.)   p. 57 (P1-20)