2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
Technical Program

Author Index: HERE

Session Schedule

Wednesday, November 8, 2006


Opening Address 10:00 - 10:15
K Keynote Speech 10:15 - 12:15
Lunch Time 12:15 - 13:20
S1 High-Mobility 13:20 - 14:30
Coffee Break 14:30 - 14:50
S2 High-k/Ge 14:50 - 16:00
Intermission 16:00 - 16:20
G1 Poster Shot Gun 16:20 - 16:40
Intermission 16:40 - 16:50
P1 Poster Session 16:50 - 17:50
Banquet 17:50 - 19:50

Thursday, November 9, 2006


S3 Silicon Dioxide 9:00 - 10:50
Coffee Break 10:50 - 11:10
S4 Characterization and Control 11:10 - 12:20
Lunch Time 12:20 - 13:40
S5 Advanced Gate Stack 13:40 - 15:40
Intermision 15:40 - 16:00
G2 Poster Shot Gun 16:00 - 17:00
Intermission 17:00 - 17:10
P2 Poster Reception (Light Meal) 17:10 - 19:10

Friday, November 10, 2006


S6 High-k Gate Dielectrics (1) 9:00 - 10:30
Coffee Break 10:30 - 10:50
S7 High-k Gate Dielectrics (2) 10:50 - 12:00
Lunch Time 12:00 - 13:20
S8 Memory 13:20 - 14:30
Coffee Break 14:30 - 14:50
S9 Reliability 14:50 - 16:20
Closing Remarks (Award) 16:20 - 16:40

List of Papers

Wednesday, November 8, 2006

Session K Keynote Speech
Time: 10:15 - 12:15 Wednesday, November 8, 2006
Chairs: Kikuo Yamabe (Univ. of Tsukuba, Japan), Akira Toriumi (Univ. of Tokyo, Japan)

K-1 (Time: 10:15 - 11:15)

Title	(Keynote Address) Materials Integration for Group IV Semiconductor CMOS
Author	Masataka Hirose (MIRAI-ASRC, AIST, Japan)
Page	pp. 1 - 2

K-2 (Time: 11:15 - 12:15)

Title	(Keynote Address) Challenges in development of Dielectric Films for Future DRAM, Flash and New Memory Devices
Author	U-In Chung (Samsung Electronics Co., Ltd., Republic of Korea)
Page	pp. 3 - 4

Session S1 High-Mobility
Time: 13:20 - 14:30 Wednesday, November 8, 2006
Chairs: Yoshinari Kamakura (Osaka Univ., Japan), Byung Jin Cho (National Univ. of Singapore, Singapore)

S1-1 (Time: 13:20 - 13:50)

Title	(Invited Paper) The quest for III-V MOSFET's
Author	Minghwei Hong, J. Raynien Kwo (National Tsing Hua Univ., Taiwan)
Page	pp. 5 - 6

S1-2 (Time: 13:50 - 14:10)

Title	Remote Phonon Scattering in Si and Ge with SiO₂ and HfO₂ Insulators: Does the Electron Mobility Determine Short Channel Performance?
Author	Terrance O'Regan, Massimo Fischetti (Univ. of Massachusetts - Amherst, United States)
Page	pp. 7 - 8

S1-3 (Time: 14:10 - 14:30)

Title	Impact of Gate Metal Induced Stress on Performance Enhancement in Gate-Last MOSFETs
Author	Takeo Matsuki, Seiji Inumiya, Takahisa Eimori, Yasuo Nara (Selete, Japan)
Page	pp. 9 - 10

Session S2 High-k/Ge
Time: 14:50 - 16:00 Wednesday, November 8, 2006
Chairs: Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Minghwei Hong (National Tsing Hua Univ., Taiwan)

S2-1 (Time: 14:50 - 15:20)

Title	(Invited Paper) Characterization of high-k/Ge gate stacks and the realization of high carrier mobility MIS transistors
Author	Akira Nishiyama, Yoshiki Kamata, Ryosuke Iijima, Tsunehiro Ino, Yuuichi Kamimuta, Masato Koyama (Toshiba Co., Japan)
Page	pp. 11 - 12

S2-2 (Time: 15:20 - 15:40)

Title	Photoemission Study of HfO₂/Ge(100) Stacked Structures
Author	Hiroshi Nakagawa, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan)
Page	pp. 13 - 14

S2-3 (Time: 15:40 - 16:00)

Title	Low Temperature Zerbst Analysis of Au/High-k/Ge MIS Capacitors
Author	Hideyuki Nomura, Tomonori Nishimura, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 15 - 16

Session G1 Poster Shot Gun
Time: 16:20 - 16:40 Wednesday, November 8, 2006
Chairs: Yoshihide Tada (Tokyo Electron Ltd., Japan), Tomoyuki Hamada (Univ. of Tokyo, Japan)

Session P1 Poster Session
Time: 16:50 - 17:50 Wednesday, November 8, 2006

P1-1 (Ferroelectric and high-k films for memory applications)

Title	Broadband dielectric spectroscopy of a ferroelectric liquid crystal
Author	Shyamal Kumar Kundu, Shin Yagihara (Tokai Univ., Japan)
Page	pp. 17 - 18

P1-2 (Electrical characterization of gate dielectrics)

Title	Electron trap characteristics of silicon-rich silicon-nitride thin films
Author	Toshiyuki Mine, Koji Fujisaki, Takeshi Ishida, Yasuhiro Shimamoto , Kazuyoshi Torii (Hitachi, Ltd., Japan)
Page	pp. 19 - 20

P1-3 (Electrical characterization of gate dielectrics)

Title	Dopant Concentration Influence on Scanning Capacitance Microscopy Imaging in Ultrathin SiO₂ Films
Author	Yuichi Naitou, Atsushi Ando, Hisato Ogiso (AIST, Japan), Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ., Japan)
Page	pp. 21 - 22

P1-4 (Electrical characterization of gate dielectrics)

Title	Evaluation of Trapped Charge Distributions in Stressed Gate SiO₂ Films using Conductive Atomic Force Microscopy
Author	Akiyoshi Seko (Nagoya Univ., Japan), Yukihiko Watanabe (Toyota Central R&D Labs., Inc., Japan), Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 23 - 24

P1-5 (Characterization and control of gate dielectric/Si interface)

Title	X-ray Photoelectron Spectroscopy Study on Dielectric Properties of AlN and Al₂O₃ Films
Author	Kazuyuki Hirose (Institute of Space and Astronautical Science, Japan), Haruhiko Suzuki, Toru Matsuda, Yasunori Takenaga, Hiroshi Nohira (Musashi Inst. of Tech., Japan), Eiji Ikenaga (JASRI/SPring-8, Kuwait), Daisuke Kobayashi (Institute of Space and Astronautical Science, Japan), Takeo Hattori (Tohoku Univ., Japan)
Page	pp. 25 - 26

P1-6 (Characterization and control of gate dielectric/Si interface)

Title	SiO₂/Si Interfacial Lattice Strain Studied by Extremely Asymmetric X-ray Diffraction
Author	Hironori Yoshida, Koichi Akimoto, Yuki Ito (Nagoya Univ., Japan), Takashi Emoto (Toyota National College of Tech., Japan), Yamamoto Naoya (Ishikawajima-Harima Heavy Industries Co., Ltd., Japan), Yoshio Oshita (Toyota Technological Institute, Japan), Ogura Atsushi (Meiji Univ., Japan)
Page	pp. 27 - 28

P1-7 (Characterization and control of gate dielectric/Si interface)

Title	Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure
Author	Hiroshi Nohira, Toru Matsuda (Musashi Inst. of Tech., Japan), Kiichi Tachi, Yasuhiro Shiino, Jaeyeol Song, Yusuke Kuroki, Jin Aun Ng , Parhat Ahmet , Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Inst. of Tech., Japan), Eiji Ikenaga, Keisuke Kobayashi (JASRI/SPring-8, Japan), Hiroshi Iwai (Tokyo Inst. of Tech., Japan), Takeo Hattori (Tokyo Inst. of Tech. and Musashi Inst. of Tech., Japan)
Page	pp. 29 - 30

P1-8 (Characterization and control of gate dielectric/Si interface)

Title	Characterization of Dielectric Stack Structures of Hafnium Silicate and Silicon Oxnitride formed on Si(100)
Author	Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichirou Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Takaaki Kawahara, Kazuyoshi Torii, Yasuo Nara (Selete, Japan)
Page	pp. 31 - 32

P1-9 (Mobility enhancement technology)

Title	High Performance LTPS TFTs with HfO₂ Gate Dielectric and Nitric Acid Pre-Treatment
Author	Ming-Wen Ma, Tsung-Yu Yang, Kuo-Shing Kao, Chun-Jung Su, Tien-Sheng Chao, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Page	pp. 33 - 34

P1-10 (Mobility enhancement technology)

Title	Mobility Enhancement in Local Strained Channel nMOSFETs on (111) Substrate
Author	Wen-Cheng Lo, Ya-Hsin Kuo (National Chiao Tung Univ., Taiwan), Yao-Jen Lee (National Nano Device Labs., Taiwan), Tien-Sheng Chao, Chun-Yen Chang (National Chiao Tung Univ., Taiwan)
Page	pp. 35 - 36

P1-11 (Mobility enhancement technology)

Title	Electron mobility enhancement of strained-Si FETs
Author	Aya Seike, Tomoyuki Tange, Itutaku Sano, Yuuki Sugiura, Iwao Ohdomari (Waseda Univ., Japan)
Page	pp. 37 - 38

Thursday, November 9, 2006

Session S3 Silicon Dioxide
Time: 9:00 - 10:50 Thursday, November 9, 2006
Chairs: Akitomo Tachibana (Kyoto Univ., Japan), Hiroyuki Kageshima (NTT Basic Research Laboratories, Japan)

S3-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) Unified Si oxidation reaction model mediated by the point defect generation at SiO₂/Si interfaces
Author	Yuji Takakuwa, Shuichi Ogawa (Tohoku Univ., Japan)
Page	pp. 39 - 40

S3-2 (Time: 9:30 - 9:50)

Title	Layer-by-Layer Oxidation on Si(001) Surface Studied by Real-Time Photoelectron Spectroscopy Using Synchrotron Radiation
Author	Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (Akita National College of Tech., Japan), Yuden Teraoka (Japan Atomic Energy Agency, Japan), Yuji Takakuwa (Tohoku Univ., Japan)
Page	pp. 41 - 42

S3-3 (Time: 9:50 - 10:10)

Title	Enhanced Oxygen Self-Diffusion in SiO₂ during Si Thermal Oxidation: Effect of the SiO₂/Si Interface
Author	Masashi Uematsu (NTT Basic Research Laboratories, Japan), Marika Gunji, Kohei M. Itoh (Keio Univ., Japan)
Page	pp. 43 - 44

S3-4 (Time: 10:10 - 10:30)

Title	Theoretical study on emission of Si-related species at Si-oxide/Si interfaces
Author	Hiroyuki Kageshima, Masashi Uematsu (NTT Basic Research Laboratories, Japan)
Page	pp. 45 - 46

S3-5 (Time: 10:30 - 10:50)

Title	Strain Distribution around SiO₂/Si Interface in Nanostructure: A Molecular Dynamics Study
Author	Hiromichi Ohta (Waseda Univ., Japan), Takanobu Watanabe (Waseda Univ., PRESTO, Japan), Iwao Ohdomari (Waseda Univ., Japan)
Page	pp. 47 - 48

Session S4 Characterization and Control
Time: 11:10 - 12:20 Thursday, November 9, 2006
Chairs: Kenji Shiraishi (Univ. of Tsukuba, Japan), Koji Eriguchi (Kyoto Univ., Japan)

S4-1 (Time: 11:10 - 11:40)

Title	(Invited Paper) Characterization of structure and composition of high-k dielectrics with ion scattering
Author	Torgny Gustafsson, Eric Garfunkel, Lyudmila Goncharova, Robin Barnes, Ozgur Celik, Mateus Dalponte, Tian Feng (Rutgers Univ., United States), Gennadi Bersuker, Pat Lysaght (Sematech, United States)
Page	pp. 49 - 50

S4-2 (Time: 11:40 - 12:00)

Title	Characterization of metal/high-k structures using a monoenergetic positron beam
Author	A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe (Univ. of Tsukuba, Japan), S. Miyazaki (Hiroshima Univ., Japan), H. Watanabe (Osaka Univ., Japan), N. Umezawa, T. Chikyow (National Institute for Materials Science, Japan), Y. Akasaka, S. Kamiyama, Y. Nara (Selete, Japan), K. Yamada (Waseda Univ., Japan)
Page	pp. 51 - 52

S4-3 (Time: 12:00 - 12:20)

Title	Structural Change of the Interfacial SiO₂ Layer between HfO₂ layers and Si Substrates
Author	Takayoshi Shimura, Eiji Mishima, Kohta Kawamura, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ., Japan)
Page	pp. 53 - 54

Session S5 Advanced Gate Stack
Time: 13:40 - 15:40 Thursday, November 9, 2006
Chairs: Toru Tatsumi (NEC, Japan), Torgny Gustafsson (Rutgers Univ., United States), Hiroshi Nohira (Musashi Inst. of Tech., Japan)

S5-1 (Time: 13:40 - 14:00)

Title	Threshold Voltage Control of HfSiON / Poly-Si pMOSFETs by Fluorine Incorporation to Channel and its Impact on Short Channel Characteristics
Author	Koji Nagatomo, Takeshi Watanabe, Katsuyuki Sekine, Motoyuki Sato, Kenji Kojima, Mariko Takayanagi, Shigeru Kawanaka, Atsushi Azuma, Yoshiaki Toyoshima (Toshiba Co. Semiconductor Company, Japan)
Page	pp. 55 - 56

S5-2 (Time: 14:00 - 14:20)

Title	Mechanism and Relationship between Capacitance Dispersion and Dipole Oscillator Model for Fluorinated Al₂O₃
Author	Chao Sung Lai, Kung Ming Fan, Hsing Kan Peng (Chang Gung Univ., Taiwan), Shian Jyh Lin, Chung Yuan Lee (Nanya Technology Co., Taiwan), Chi Fong Ai (Institute of Nuclear Energy Research, Taiwan)
Page	pp. 57 - 58

S5-3 (Time: 14:20 - 14:40)

Title	Study of peeling process at doped-NiSi/SiO₂ interface
Author	Masahiro Saito, Naoyuki Sugiyama, Keiko Matsuda, Tomomi Sugimoto, Takashi Miyamoto, Takashi Yamamoto (Toray Research Center, Inc., Japan), Kimihiko Hosaka, Takayuki Aoyama (Fujitsu Laboratories Ltd., Japan)
Page	pp. 59 - 60

S5-4 (Time: 14:40 - 15:00)

Title	A New Insight into Control of Fermi Level Pinning in TiN/HfSiON Gate Stack
Author	Akio Ohta, Seiichi Miyazaki (Hiroshima Univ., Japan), Yasushi Akasaka (Selete, Japan), Heiji Watanabe (Osaka Univ., Japan), Kenji Shiraishi (Univ. of Tsukuba, Japan), Keisaku Yamada (Waseda Univ., Japan), Seiji Inumiya, Yasuo Nara (Selete, Japan)
Page	pp. 61 - 62

S5-5 (Time: 15:00 - 15:20)

Title	Vfb Roll-off of Metal Gate/HfO₂/SiO₂/Si Capacitors in Thinner EOT Regime
Author	Koji Akiyama (MIRAI-ASET, Japan), Wenwn Wang (MIRAI-ASRC, China), Wataru Mizubayashi (MIRAI-ASRC, Japan), Kazi Salam (MIRAI-ASET, Bangladesh), Minoru Ikeda (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 63 - 64

S5-6 (Time: 15:20 - 15:40)

Title	V_FB Modification by Thin La₂O₃ Insertion into HfO₂/SiO₂ Interface
Author	Yoshiki Yamamoto, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 65 - 66

Session G2 Poster Shot Gun
Time: 16:00 - 17:00 Thursday, November 9, 2006
Chairs: Seiji Inumiya (Toshiba Co., Japan), Koji Kita (Univ. of Tokyo, Japan)

Session P2 Poster Reception (Light Meal)
Time: 17:10 - 19:10 Thursday, November 9, 2006

P2-1 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Bonding Structure of Silicon Oxynitride Grown by Plasma-Enhanced Chemical Vapor Deposition
Author	C. K. Wong, Hei Wong, V. Filip, P. S. Chung (City Univ. of Hong Kong, Hong Kong)
Page	pp. 67 - 68

P2-2 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Observation of initial oxidation process on Si(110)-16x2 by scanning tunneling microscopy
Author	Hideaki Togashi, Yuya Takahashi, Atsushi Kato (Tohoku Univ., Japan), Hidehito Asaoka (Japan Atomic Energy Agency, Japan), Atsushi Konno, Maki Suemitsu (Tohoku Univ., Japan)
Page	pp. 69 - 70

P2-3 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)

Title	Suppression of Oxidation Reaction by Oxidation-Induced Strain at Ultrathin Si-Oxide/Si Interface
Author	Toru Akiyama (Mie Univ., Japan), Hiroyuki Kageshima, Masashi Uematsu, Tomonori Ito (NTT Basic Research Laboratories, NTT Co., Japan)
Page	pp. 71 - 72

P2-4 (Theoretical approaches to gate dielectrics/Si structure)

Title	Study of Electron Tunneling Components in P⁺ Poly-Gate pMOSFETs from Direct Tunneling to Fowler-Nordheim Region
Author	Ting-Kuo Kang (Cheng Shiu Univ., Taiwan)
Page	pp. 73 - 74

P2-5 (Theoretical approaches to gate dielectrics/Si structure)

Title	Dielectric properties of the interface between Si and SiO₂
Author	Sadakazu Wakui, Jun Nakamura, Akiko Natori (Univ. of Electro-Communications, Japan)
Page	pp. 75 - 76

P2-6 (Theoretical approaches to gate dielectrics/Si structure)

Title	Effective Mass Anomalies of Strained Silicon Thin Films and Crystals: a first-principles study
Author	Jun Yamauchi (Keio Univ., Japan)
Page	pp. 77 - 78

P2-7 (Theoretical approaches to gate dielectrics/Si structure)

Title	Local dielectric analysis of gate insulator oxide cluster models
Author	Kentaro Doi, Yutaka Mikazuki, Shinya Sugino, Akitomo Tachibana (Kyoto Univ., Japan)
Page	pp. 79 - 80

P2-8 (Growth and related process of gate dielectric films)

Title	Ultra-Low Temperature Growth of Aluminum Silicate Dielectric Formed by Nitric Acid
Author	Ming-Wen Ma, Kuo-Shing Kao, Tien-Sheng Chao, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Page	pp. 81 - 82

P2-9 (Growth and related process of gate dielectric films)

Title	Impact of In-Situ Post Nitridation Annealing for Successful Fabrication of HfSiON Thin Film
Author	Sadayoshi Horii, Dai Ishikawa, Atsushi Sano, Yoshinori Imai (Hitachi Kokusai Electric Inc., Japan)
Page	pp. 83 - 84

P2-10 (Growth and related process of gate dielectric films)

Title	The Electrical Properties of Thermal and PE-ALD Ta₂O₅
Author	Wan Joo Maeng, Yo Sep Yang, Chan Gyung Park, Hyungjun Kim (POSTECH, Republic of Korea)
Page	pp. 85 - 86

P2-11 (Growth and related process of gate dielectric films)

Title	X-ray photoelectron spectroscopy study on SiO₂ formed on several orientated c-Si with high-pressure water vapor
Author	Naoya Yamamoto (Ishikawajima-Harima Heavy Industries Co., Ltd., Japan), Satoshi Tanaka (Meiji Univ., Japan), Hitoshi Sai, Ryusuke Imai (Toyota Technological Institute, Japan), Eiji Ikenaga, Ichiro Hirosawa (JASRI/SPring-8, Japan), Yoshio Oshita (Toyota Technological Institute, Japan), Atsushi Ogura (Meiji Univ., Japan)
Page	pp. 87 - 88

P2-12 (High-k gate dielectrics)

Title	Nitrogen Incorporation in Hafnium Oxide using Plasma Immersion Implantation
Author	B. Sen, Hei Wong, B. L. Yang, A. P. Huang, P. K. Chu, V. Filip (City Univ. of Hong Kong, Hong Kong), C. K. Sarkar (Jadavpur Univ., India)
Page	pp. 89 - 90

P2-13 (High-k gate dielectrics)

Title	The Electrical Characteristics of Thin Yttrium Oxide Film on Si Substrate with NH₃ Plasma Treatment
Author	Tung-Ming Pan, Jian-Der Lee, Chun-Lin Chen, Sung-Ju Hou, Wei-Hao Shu, Tsung-Te Chen, Wen-Jen Lai (Chang Gung Univ., Taiwan)
Page	pp. 91 - 92

P2-14 (High-k gate dielectrics)

Title	The Physical and Electrical Properties of Thin Lanthanum Oxide Gate Dielectrics with Al or Al/TaN Metal Gate
Author	Tung-Ming Pan, Chun-Lin Chen, Wen-Wei Yeh, Jian-Der Lee, Te-Yi Yu, Kao-Ming Liao, Tin-Wei Wu, Shin-Chieh Lee, Yung-Shiuan Chen, Tsung-Te Chen, Wen-Jen Lai (Chang Gung Univ., Taiwan)
Page	pp. 93 - 94

P2-15 (High-k gate dielectrics)

Title	High-k Gate Dielectric Films Studied by Extremely Asymmetric X-ray Diffraction and X-ray Photoelectron Spectroscopy
Author	Yuki Ito, Koichi Akimoto, Hironori Yoshida (Nagoya Univ., Japan), Takashi Emoto (Toyota National College of Tech., Japan), Daisuke Kobayashi, Kazuyuki Hirose (ISAS, Japan)
Page	pp. 95 - 96

P2-16 (High-k gate dielectrics)

Title	First-Principles Study on Dielectric Response of Amorphous HfAlO
Author	Hiroyoshi Momida (National Institute for Materials Science, Japan), Tomoyuki Hamada (Hitachi, Ltd., Japan), Yoshiteru Takagi (Univ. of Tokyo, Japan), Takenori Yamamoto, Tsuyoshi Uda (AdvanceSoft Co., Japan), Takahisa Ohno (National Institute for Materials Science, Japan)
Page	pp. 97 - 98

P2-17 (High-k gate dielectrics)

Title	Dispersive dielectric characteristics of HfSiON with poly-Si gate ---Dependence on nitrogen concentration of TDDB slope---
Author	Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba, Japan), Seiji Inumiya (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 99 - 100

P2-18 (High-k gate dielectrics)

Title	Dispersive dielectric characteristics of HfSiON with poly-Si gate (2) –correlation of conduction and lifetime based on inhomogeneous defect distribution-
Author	Tatsuya Naito, Chihiro Tamura (Univ. of Tsukuba, Japan), Seiji Inumiya (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 101 - 102

P2-19 (High-k gate dielectrics)

Title	Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode
Author	Yoshishige Tsuchiya (Tokyo Inst. of Tech., Japan), Ryousuke Furukawa (Tokyo Inst. of Tech. and Musashi Inst. of Tech., Japan), Takaya Suto, Hiroshi Mizuta, Shunri Oda (Tokyo Inst. of Tech., Japan), Hiroshi Nohira, Takuya Maruizumi, Yasuhiro Shiraki (Musashi Inst. of Tech., Japan)
Page	pp. 103 - 104

P2-20 (High-k gate dielectrics)

Title	Thermal Stability and Electrical Properties of HfON Gate Dielectric with HfO₂ Using N₂O Treatment
Author	Shao-Ming Yang, Chao-Hsin Chien, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Page	pp. 105 - 106

P2-21 (High-k gate dielectrics)

Title	Analysis of Leakage Current through Ultrathin HfSiO_xN/SiO₂ Stack Gate Dielectric Capacitors with TiN/W/TiN Gate
Author	Yanli Pei, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Taiichi Akasaka, Yasuo Nara (Selete, Japan)
Page	pp. 107 - 108

P2-22 (Metal gate electrodes)

Title	Nitrogen Incorporation and Post Metal Anneal Effect on Metal Work Function of HfN_x/Al₂O₃/p-Si Gate Stack
Author	Chao-Sung Lai, Hsing-Kan Peng, Kung-Ming Fan (Chang Gung Univ., Taiwan), Jer-Chyi Wang, Shian-Jyh Lin, Chung-Yuan Lee (Nanya Technology Co., Taiwan)
Page	pp. 109 - 110

P2-23 (Metal gate electrodes)

Title	First-Principles Calculation of Electrostatic Property of the Interface : Ultra-thin-Al / Si(111)
Author	Tomo Shimizu, Kenji Natori (Univ. of Tsukuba, Japan), Jun Nakamura, Akiko Natori (Univ. of Electro-Communications, Japan)
Page	pp. 111 - 112

P2-24 (Metal gate electrodes)

Title	Study of Vfb modulation mechanism of impurity doped Ni-FUSI
Author	Takashi Yamamoto, Takashi Miyamoto, Keiko Matsuda, Shingo Ogawa, Fumito Takeno, Tomomi Sugimoto, Noriyuki Fujiyama (Toray Research Center, Inc., Japan), Kimihiko Hosaka, Takayuki Aoyama (Fujitsu Laboratories Ltd., Japan)
Page	pp. 113 - 114

P2-25 (Gate dielectric wearout and reliability)

Title	Study of Self-Heating in Si Nano Structure for FB-SGT with High-k Dielectric Films
Author	Tetsuo Endoh, Kousuke Tanaka (Tohoku Univ., Japan)
Page	pp. 115 - 116

P2-26 (Gate dielectric wearout and reliability)

Title	Visualization of Two-dimesional Distribution of Dielectric Degradation by Stress Induced Surface Roughness of Tunnel Silicon Dioxide
Author	Yui Tokukawa, Shinichi Okamoto, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan), Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Advanced Technology, Japan)
Page	pp. 117 - 118

Friday, November 10, 2006

Session S6 High-k Gate Dielectrics (1)
Time: 9:00 - 10:30 Friday, November 10, 2006
Chairs: Kazuyoshi Torii (Hitachi, Ltd., Japan), Andre Stesmans (Univ. of Leuven, Belgium)

S6-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) Integration of High-K Gate Dielectric into High Mobility Substrate
Author	Byung Jin Cho (National Univ. of Singapore, Singapore), Wei Yip Loh (Institute of Microelectronics, Singapore), Hui Zang, Goutam Kumar Dalapati, Yi Tong, Kyu Jin Choi (National Univ. of Singapore, Singapore)
Page	pp. 119 - 120

S6-2 (Time: 9:30 - 9:50)

Title	Controlled interlayer formation for sub-nm-EOT high-k gate stack
Author	Yukinori Morita (MIRAI-ASRC, Japan), Kunihiko Iwamoto, Arito Ogawa, Masashi Takahashi (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (MIRAI-ASRC, Japan)
Page	pp. 121 - 122

S6-3 (Time: 9:50 - 10:10)

Title	Experimental Determination of Tunneling Effective Mass in HfO₂
Author	Kazuyuki Tomida, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 123 - 124

S6-4 (Time: 10:10 - 10:30)

Title	Effect of Residual OH Impurities in ALD High-k Films on Interfacial SiO₂ Growth
Author	Shinsuke Kimura (Shibaura Inst. of Tech., Japan), Kunihiko Iwamoto, Masaru Kadoshima (MIRAI-ASET, Japan), Yuu Nunoshige (Shibaura Inst. of Tech., Japan), Arito Ogawa, Toshihide Nabatame (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan)
Page	pp. 125 - 126

Session S7 High-k Gate Dielectrics (2)
Time: 10:50 - 12:00 Friday, November 10, 2006
Chairs: Jiro Yugami (Renesas Technology Corp., Japan), Chioko Kaneta (Fujitsu Laboratories Ltd., Japan)

S7-1 (Time: 10:50 - 11:20)

Title	(Invited Paper) Point defects in stacks of high-k metal oxides on semiconductors probed by electron spin resonance: the Ge vs Si case
Author	Andre Stesmans, V. V. Afanas'ev (Univ. of Leuven, Belgium)
Page	pp. 127 - 128

S7-2 (Time: 11:20 - 11:40)

Title	Dielectric Properties of Amorphous LaTaO_x Films for Alternative Gate Dielectrics
Author	Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 129 - 130

S7-3 (Time: 11:40 - 12:00)

Title	First Principles Calculation of Dielectric Function of Amorphous High-k materials in the Giga to Tera Hz Frequency Region
Author	Tomoyuki Hamada (Univ. of Tokyo, Japan), Hiroyoshi Momida, Takahisa Ohno (National Institute for Materials Science, Japan)
Page	pp. 131 - 132

Session S8 Memory
Time: 13:20 - 14:30 Friday, November 10, 2006
Chairs: Toyohiro Chikyo (National Institute for Materials Science, Japan), Ajit Shanware (Texas Instruments, United States)

S8-1 (Time: 13:20 - 13:50)

Title	(Invited Paper) Ferroelectric Gate Insulator - not only for nonvolatile memory device -
Author	Eisuke Tokumitsu (Tokyo Inst. of Tech., Japan)
Page	pp. 133 - 134

S8-2 (Time: 13:50 - 14:10)

Title	Physical Model of Electron and Hole Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) for Embedded Flash Memories
Author	Kenji Shiraishi (Univ. of Tsukuba, Japan), Kazuyoshi Torii (Hitachi, Ltd., Japan)
Page	pp. 135 - 136

S8-3 (Time: 14:10 - 14:30)

Title	Nonvolatile Flash Memory Devices Using CeO₂ Nanocrystal Trapping Layer for Two-Bits/Cell Applications
Author	Shao-Ming Yang, Chao-Hsin Chien, Jiun-Jia Huang, Yu-Hsien Lin, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Page	pp. 137 - 138

Session S9 Reliability
Time: 14:50 - 16:20 Friday, November 10, 2006
Chairs: Shimpei Tsujikawa (Renesas Technology Corp., Japan), Kazuo Tsutsui (Tokyo Inst. of Tech., Japan)

S9-1 (Time: 14:50 - 15:20)

Title	(Invited Paper) Biased Temperature Stability Testing of Metal Gates and High-k (HfSiON) Gate Dielectrics
Author	Ajit Shanware, J. McPherson, M.R. Visokay, J. J. Chambers, M. Ramin, C. Huffman, P. Kohli, L. Colombo (Texas Instruments, United States)
Page	pp. 139 - 140

S9-2 (Time: 15:20 - 15:40)

Title	Recovery Mechanism of Stress-induced Leakage Current by Bias Annealing in Thin Gate Oxide
Author	Renichi Yamada, Yasuhiro Shimamoto, Kikuo Watanabe (Hitachi, Ltd., Japan)
Page	pp. 141 - 142

S9-3 (Time: 15:40 - 16:00)

Title	Experimental Evidence of Nit-related and –unrelated Mechanisms for NBTI with Ultra-thin SiON Gate Dielectric
Author	Shigeto Fukatsu, Daisuke Hagishima, Yuichiro Mitani, Kazuya Matsuzawa , Koichiro Inoue (Toshiba Co., Japan)
Page	pp. 143 - 144

S9-4 (Time: 16:00 - 16:20)

Title	Generation of Electrode-Side Traps under NBT Stress in Metal/HfSiON PFETs and its Impact on Floating Body Effect of SOI Devices
Author	Fumio Ootsuka, Takahisa Eimori, Yasuo Nara, Yuzuru Ohji (Selete, Japan)
Page	pp. 145 - 146

2006 International Workshop on Dielectric Thin Films for Future ULSI Devices Technical Program

Session Schedule

List of Papers

2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
Technical Program