2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
Author Index

Table of Contents:   A  B  C  D  E  F  G  H  I  K  L  M  N  O  P  R  S  T  U  V  W  Y  Z  

A

Afanas'ev, V. V. (Univ. of Leuven)   p. 127 (S7-1)
Ahmet, Parhat (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Ai, Chi Fong (Institute of Nuclear Energy Research)   p. 57 (S5-2)
Akasaka, Taiichi (Selete)   p. 107 (P2-21)
Akasaka, Y. (Selete)   p. 51 (S4-2)
Akasaka, Yasushi (Selete)   p. 61 (S5-4)
Akimoto, Koichi (Nagoya Univ.)   p. 27 (P1-6)
Akimoto, Koichi (Nagoya Univ.)   p. 95 (P2-15)
Akiyama, Koji (MIRAI-ASET)   p. 63 (S5-5)
Akiyama, Toru (Mie Univ.)   p. 71 (P2-3)
Ando, Atsushi (AIST)   p. 21 (P1-3)
Aoyama, Takayuki (Fujitsu Laboratories Ltd.)   p. 59 (S5-3)
Aoyama, Takayuki (Fujitsu Laboratories Ltd.)   p. 113 (P2-24)
Asaoka, Hidehito (Japan Atomic Energy Agency)   p. 69 (P2-2)
Atsushi, Ogura (Meiji Univ.)   p. 27 (P1-6)
Azuma, Atsushi (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)

B

Barnes, Robin (Rutgers Univ.)   p. 49 (S4-1)
Bersuker, Gennadi (Sematech)   p. 49 (S4-1)

C

Celik, Ozgur (Rutgers Univ.)   p. 49 (S4-1)
Chambers, J. J. (Texas Instruments)   p. 139 (S9-1)
Chang, Chun-Yen (National Chiao Tung Univ.)   p. 35 (P1-10)
Chao, Tien-Sheng (National Chiao Tung Univ.)   p. 33 (P1-9)
Chao, Tien-Sheng (National Chiao Tung Univ.)   p. 35 (P1-10)
Chao, Tien-Sheng (National Chiao Tung Univ.)   p. 81 (P2-8)
Chen, Chun-Lin (Chang Gung Univ.)   p. 91 (P2-13)
Chen, Chun-Lin (Chang Gung Univ.)   p. 93 (P2-14)
Chen, Tsung-Te (Chang Gung Univ.)   p. 91 (P2-13)
Chen, Tsung-Te (Chang Gung Univ.)   p. 93 (P2-14)
Chen, Yung-Shiuan (Chang Gung Univ.)   p. 93 (P2-14)
Chien, Chao-Hsin (National Chiao Tung Univ.)   p. 105 (P2-20)
Chien, Chao-Hsin (National Chiao Tung Univ.)   p. 137 (S8-3)
Chikyow, T. (National Institute for Materials Science)   p. 51 (S4-2)
Cho, Byung Jin (National Univ. of Singapore)   p. 119 (S6-1)
Choi, Kyu Jin (National Univ. of Singapore)   p. 119 (S6-1)
Chu, P. K. (City Univ. of Hong Kong)   p. 89 (P2-12)
Chung, P. S. (City Univ. of Hong Kong)   p. 67 (P2-1)
Chung, U-In (Samsung Electronics Co., Ltd.)   p. 3 (K-2)
Colombo, L. (Texas Instruments)   p. 139 (S9-1)

D

Dalapati, Goutam Kumar (National Univ. of Singapore)   p. 119 (S6-1)
Dalponte, Mateus (Rutgers Univ.)   p. 49 (S4-1)
Doi, Kentaro (Kyoto Univ.)   p. 79 (P2-7)

E

Eimori, Takahisa (Selete)   p. 9 (S1-3)
Eimori, Takahisa (Selete)   p. 145 (S9-4)
Emoto, Takashi (Toyota National College of Tech.)   p. 27 (P1-6)
Emoto, Takashi (Toyota National College of Tech.)   p. 95 (P2-15)
Endoh, Tetsuo (Tohoku Univ.)   p. 115 (P2-25)

F

Fan, Kung Ming (Chang Gung Univ.)   p. 57 (S5-2)
Fan, Kung-Ming (Chang Gung Univ.)   p. 109 (P2-22)
Feng, Tian (Rutgers Univ.)   p. 49 (S4-1)
Filip, V. (City Univ. of Hong Kong)   p. 67 (P2-1)
Filip, V. (City Univ. of Hong Kong)   p. 89 (P2-12)
Fischetti, Massimo (Univ. of Massachusetts - Amherst)   p. 7 (S1-2)
Fujisaki, Koji (Hitachi, Ltd.)   p. 19 (P1-2)
Fujiyama, Noriyuki (Toray Research Center, Inc.)   p. 113 (P2-24)
Fukatsu, Shigeto (Toshiba Co.)   p. 143 (S9-3)
Furukawa, Ryousuke (Tokyo Inst. of Tech. and Musashi Inst. of Tech.)   p. 103 (P2-19)

G

Garfunkel, Eric (Rutgers Univ.)   p. 49 (S4-1)
Goncharova, Lyudmila (Rutgers Univ.)   p. 49 (S4-1)
Gunji, Marika (Keio Univ.)   p. 43 (S3-3)
Gustafsson, Torgny (Rutgers Univ.)   p. 49 (S4-1)

H

Hagishima, Daisuke (Toshiba Co.)   p. 143 (S9-3)
Hamada, Tomoyuki (Hitachi, Ltd.)   p. 97 (P2-16)
Hamada, Tomoyuki (Univ. of Tokyo)   p. 131 (S7-3)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 99 (P2-17)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 101 (P2-18)
Hasunuma, Ryu (Univ. of Tsukuba)   p. 117 (P2-26)
Hattori, Takeo (Tohoku Univ.)   p. 25 (P1-5)
Hattori, Takeo (Tokyo Inst. of Tech. and Musashi Inst. of Tech.)   p. 29 (P1-7)
Higashi, Seiichiro (Hiroshima Univ.)   p. 13 (S2-2)
Higashi, Seiichiro (Hiroshima Univ.)   p. 107 (P2-21)
Higashi, Seiichirou (Hiroshima Univ.)   p. 31 (P1-8)
Hirosawa, Ichiro (JASRI/SPring-8)   p. 87 (P2-11)
Hirose, Kazuyuki (Institute of Space and Astronautical Science)   p. 25 (P1-5)
Hirose, Kazuyuki (ISAS)   p. 95 (P2-15)
Hirose, Masataka (MIRAI-ASRC, AIST)   p. 1 (K-1)
Hong, Minghwei (National Tsing Hua Univ.)   p. 5 (S1-1)
Horii, Sadayoshi (Hitachi Kokusai Electric Inc.)   p. 83 (P2-9)
Hosaka, Kimihiko (Fujitsu Laboratories Ltd.)   p. 59 (S5-3)
Hosaka, Kimihiko (Fujitsu Laboratories Ltd.)   p. 113 (P2-24)
Hou, Sung-Ju (Chang Gung Univ.)   p. 91 (P2-13)
Huang, A. P. (City Univ. of Hong Kong)   p. 89 (P2-12)
Huang, Jiun-Jia (National Chiao Tung Univ.)   p. 137 (S8-3)
Huffman, C. (Texas Instruments)   p. 139 (S9-1)

I

Iijima, Ryosuke (Toshiba Co.)   p. 11 (S2-1)
Ikeda, Minoru (MIRAI-ASET)   p. 63 (S5-5)
Ikenaga, Eiji (JASRI/SPring-8)   p. 25 (P1-5)
Ikenaga, Eiji (JASRI/SPring-8)   p. 29 (P1-7)
Ikenaga, Eiji (JASRI/SPring-8)   p. 87 (P2-11)
Imai, Ryusuke (Toyota Technological Institute)   p. 87 (P2-11)
Imai, Yoshinori (Hitachi Kokusai Electric Inc.)   p. 83 (P2-9)
Ino, Tsunehiro (Toshiba Co.)   p. 11 (S2-1)
Inoue, Koichiro (Toshiba Co.)   p. 143 (S9-3)
Inumiya, Seiji (Selete)   p. 9 (S1-3)
Inumiya, Seiji (Selete)   p. 61 (S5-4)
Inumiya, Seiji (Selete)   p. 99 (P2-17)
Inumiya, Seiji (Selete)   p. 101 (P2-18)
Ishida, Takeshi (Hitachi, Ltd.)   p. 19 (P1-2)
Ishidzuka, Shinji (Akita National College of Tech.)   p. 41 (S3-2)
Ishikawa, Dai (Hitachi Kokusai Electric Inc.)   p. 83 (P2-9)
Ito, Tomonori (NTT Basic Research Laboratories, NTT Co.)   p. 71 (P2-3)
Ito, Yuki (Nagoya Univ.)   p. 27 (P1-6)
Ito, Yuki (Nagoya Univ.)   p. 95 (P2-15)
Itoh, Kohei M. (Keio Univ.)   p. 43 (S3-3)
Iwai, Hiroshi (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Iwamoto, Kunihiko (MIRAI-ASET)   p. 121 (S6-2)
Iwamoto, Kunihiko (MIRAI-ASET)   p. 125 (S6-4)

K

Kadoshima, Masaru (MIRAI-ASET)   p. 125 (S6-4)
Kageshima, Hiroyuki (NTT Basic Research Laboratories)   p. 45 (S3-4)
Kageshima, Hiroyuki (NTT Basic Research Laboratories, NTT Co.)   p. 71 (P2-3)
Kakushima, Kuniyuki (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Kamata, Yoshiki (Toshiba Co.)   p. 11 (S2-1)
Kamimuta, Yuuichi (Toshiba Co.)   p. 11 (S2-1)
Kamiyama, S. (Selete)   p. 51 (S4-2)
Kang, Ting-Kuo (Cheng Shiu Univ.)   p. 73 (P2-4)
Kao, Kuo-Shing (National Chiao Tung Univ.)   p. 33 (P1-9)
Kao, Kuo-Shing (National Chiao Tung Univ.)   p. 81 (P2-8)
Kato, Atsushi (Tohoku Univ.)   p. 69 (P2-2)
Kawahara, Takaaki (Selete)   p. 31 (P1-8)
Kawamura, Kohta (Osaka Univ.)   p. 53 (S4-3)
Kawanaka, Shigeru (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Kim, Hyungjun (POSTECH)   p. 85 (P2-10)
Kimura, Shinsuke (Shibaura Inst. of Tech.)   p. 125 (S6-4)
Kita, Koji (Univ. of Tokyo)   p. 15 (S2-3)
Kita, Koji (Univ. of Tokyo)   p. 65 (S5-6)
Kita, Koji (Univ. of Tokyo)   p. 123 (S6-3)
Kita, Koji (Univ. of Tokyo)   p. 129 (S7-2)
Kobayashi, Daisuke (Institute of Space and Astronautical Science)   p. 25 (P1-5)
Kobayashi, Daisuke (ISAS)   p. 95 (P2-15)
Kobayashi, Keisuke (JASRI/SPring-8)   p. 29 (P1-7)
Kohli, P. (Texas Instruments)   p. 139 (S9-1)
Kojima, Kenji (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Konno, Atsushi (Tohoku Univ.)   p. 69 (P2-2)
Koyama, Masato (Toshiba Co.)   p. 11 (S2-1)
Kundu, Shyamal Kumar (Tokai Univ.)   p. 17 (P1-1)
Kuo, Ya-Hsin (National Chiao Tung Univ.)   p. 35 (P1-10)
Kuribayashi, Hitoshi (Fuji Electric Advanced Technology)   p. 117 (P2-26)
Kuroki, Yusuke (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Kwo, J. Raynien (National Tsing Hua Univ.)   p. 5 (S1-1)
Kyuno, Kentaro (Univ. of Tokyo)   p. 129 (S7-2)

L

Lai, Chao Sung (Chang Gung Univ.)   p. 57 (S5-2)
Lai, Chao-Sung (Chang Gung Univ.)   p. 109 (P2-22)
Lai, Wen-Jen (Chang Gung Univ.)   p. 91 (P2-13)
Lai, Wen-Jen (Chang Gung Univ.)   p. 93 (P2-14)
Lee, Chung Yuan (Nanya Technology Co.)   p. 57 (S5-2)
Lee, Chung-Yuan (Nanya Technology Co.)   p. 109 (P2-22)
Lee, Jian-Der (Chang Gung Univ.)   p. 91 (P2-13)
Lee, Jian-Der (Chang Gung Univ.)   p. 93 (P2-14)
Lee, Shin-Chieh (Chang Gung Univ.)   p. 93 (P2-14)
Lee, Yao-Jen (National Nano Device Labs.)   p. 35 (P1-10)
Lei, Tan-Fu (National Chiao Tung Univ.)   p. 33 (P1-9)
Lei, Tan-Fu (National Chiao Tung Univ.)   p. 81 (P2-8)
Lei, Tan-Fu (National Chiao Tung Univ.)   p. 105 (P2-20)
Lei, Tan-Fu (National Chiao Tung Univ.)   p. 137 (S8-3)
Liao, Kao-Ming (Chang Gung Univ.)   p. 93 (P2-14)
Lin, Shian Jyh (Nanya Technology Co.)   p. 57 (S5-2)
Lin, Shian-Jyh (Nanya Technology Co.)   p. 109 (P2-22)
Lin, Yu-Hsien (National Chiao Tung Univ.)   p. 137 (S8-3)
Lo, Wen-Cheng (National Chiao Tung Univ.)   p. 35 (P1-10)
Loh, Wei Yip (Institute of Microelectronics)   p. 119 (S6-1)
Lysaght, Pat (Sematech)   p. 49 (S4-1)

M

Ma, Ming-Wen (National Chiao Tung Univ.)   p. 33 (P1-9)
Ma, Ming-Wen (National Chiao Tung Univ.)   p. 81 (P2-8)
Maeng, Wan Joo (POSTECH)   p. 85 (P2-10)
Maruizumi, Takuya (Musashi Inst. of Tech.)   p. 103 (P2-19)
Matsuda, Keiko (Toray Research Center, Inc.)   p. 59 (S5-3)
Matsuda, Keiko (Toray Research Center, Inc.)   p. 113 (P2-24)
Matsuda, Toru (Musashi Inst. of Tech.)   p. 25 (P1-5)
Matsuda, Toru (Musashi Inst. of Tech.)   p. 29 (P1-7)
Matsuki, Takeo (Selete)   p. 9 (S1-3)
Matsuzawa, Kazuya (Toshiba Co.)   p. 143 (S9-3)
McPherson, J. (Texas Instruments)   p. 139 (S9-1)
Mikazuki, Yutaka (Kyoto Univ.)   p. 79 (P2-7)
Mine, Toshiyuki (Hitachi, Ltd.)   p. 19 (P1-2)
Mishima, Eiji (Osaka Univ.)   p. 53 (S4-3)
Mitani, Yuichiro (Toshiba Co.)   p. 143 (S9-3)
Miyamoto, Takashi (Toray Research Center, Inc.)   p. 59 (S5-3)
Miyamoto, Takashi (Toray Research Center, Inc.)   p. 113 (P2-24)
Miyazaki, S. (Hiroshima Univ.)   p. 51 (S4-2)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 13 (S2-2)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 31 (P1-8)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 61 (S5-4)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 107 (P2-21)
Mizubayashi, Wataru (MIRAI-ASRC)   p. 63 (S5-5)
Mizuta, Hiroshi (Tokyo Inst. of Tech.)   p. 103 (P2-19)
Momida, Hiroyoshi (National Institute for Materials Science)   p. 97 (P2-16)
Momida, Hiroyoshi (National Institute for Materials Science)   p. 131 (S7-3)
Morita, Yukinori (MIRAI-ASRC)   p. 121 (S6-2)
Murakami, Hideki (Hiroshima Univ.)   p. 13 (S2-2)
Murakami, Hideki (Hiroshima Univ.)   p. 31 (P1-8)
Murakami, Hideki (Hiroshima Univ.)   p. 107 (P2-21)

N

Nabatame, Toshihide (MIRAI-ASET)   p. 63 (S5-5)
Nabatame, Toshihide (MIRAI-ASET)   p. 121 (S6-2)
Nabatame, Toshihide (MIRAI-ASET)   p. 125 (S6-4)
Nagatomo, Koji (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Naito, T. (Univ. of Tsukuba)   p. 51 (S4-2)
Naito, Tatsuya (Univ. of Tsukuba)   p. 99 (P2-17)
Naito, Tatsuya (Univ. of Tsukuba)   p. 101 (P2-18)
Naitou, Yuichi (AIST)   p. 21 (P1-3)
Nakagawa, Hiroshi (Hiroshima Univ.)   p. 13 (S2-2)
Nakagawa, Hiroshi (Hiroshima Univ.)   p. 31 (P1-8)
Nakamura, Jun (Univ. of Electro-Communications)   p. 75 (P2-5)
Nakamura, Jun (Univ. of Electro-Communications)   p. 111 (P2-23)
Naoya, Yamamoto (Ishikawajima-Harima Heavy Industries Co., Ltd.)   p. 27 (P1-6)
Nara, Y. (Selete)   p. 51 (S4-2)
Nara, Yasuo (Selete)   p. 9 (S1-3)
Nara, Yasuo (Selete)   p. 31 (P1-8)
Nara, Yasuo (Selete)   p. 61 (S5-4)
Nara, Yasuo (Selete)   p. 107 (P2-21)
Nara, Yasuo (Selete)   p. 145 (S9-4)
Natori, Akiko (Univ. of Electro-Communications)   p. 75 (P2-5)
Natori, Akiko (Univ. of Electro-Communications)   p. 111 (P2-23)
Natori, Kenji (Univ. of Tsukuba)   p. 111 (P2-23)
Ng, Jin Aun (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Nishimura, Tomonori (Univ. of Tokyo)   p. 15 (S2-3)
Nishiyama, Akira (Toshiba Co.)   p. 11 (S2-1)
Nohira, Hiroshi (Musashi Inst. of Tech.)   p. 25 (P1-5)
Nohira, Hiroshi (Musashi Inst. of Tech.)   p. 29 (P1-7)
Nohira, Hiroshi (Musashi Inst. of Tech.)   p. 103 (P2-19)
Nomura, Hideyuki (Univ. of Tokyo)   p. 15 (S2-3)
Nunoshige, Yuu (Shibaura Inst. of Tech.)   p. 125 (S6-4)

O

O'Regan, Terrance (Univ. of Massachusetts - Amherst)   p. 7 (S1-2)
Oda, Shunri (Tokyo Inst. of Tech.)   p. 103 (P2-19)
Ogawa, Arito (MIRAI-ASET)   p. 121 (S6-2)
Ogawa, Arito (MIRAI-ASET)   p. 125 (S6-4)
Ogawa, Masaki (Nagoya Univ.)   p. 23 (P1-4)
Ogawa, Shingo (Toray Research Center, Inc.)   p. 113 (P2-24)
Ogawa, Shuichi (Tohoku Univ.)   p. 39 (S3-1)
Ogawa, Shuichi (Tohoku Univ.)   p. 41 (S3-2)
Ogino, Masaaki (Fuji Electric Advanced Technology)   p. 117 (P2-26)
Ogiso, Hisato (AIST)   p. 21 (P1-3)
Ogura, Atsushi (Meiji Univ.)   p. 87 (P2-11)
Ohdomari, Iwao (Waseda Univ.)   p. 37 (P1-11)
Ohdomari, Iwao (Waseda Univ.)   p. 47 (S3-5)
Ohishi, Tomoji (Shibaura Inst. of Tech.)   p. 125 (S6-4)
Ohji, Yuzuru (Selete)   p. 145 (S9-4)
Ohno, Takahisa (National Institute for Materials Science)   p. 97 (P2-16)
Ohno, Takahisa (National Institute for Materials Science)   p. 131 (S7-3)
Ohta, Akio (Hiroshima Univ.)   p. 13 (S2-2)
Ohta, Akio (Hiroshima Univ.)   p. 31 (P1-8)
Ohta, Akio (Hiroshima Univ.)   p. 61 (S5-4)
Ohta, Akio (Hiroshima Univ.)   p. 107 (P2-21)
Ohta, Hiromichi (Waseda Univ.)   p. 47 (S3-5)
Okamoto, Shinichi (Univ. of Tsukuba)   p. 117 (P2-26)
Ootsuka, Fumio (Selete)   p. 145 (S9-4)
Oshita, Yoshio (Toyota Technological Institute)   p. 27 (P1-6)
Oshita, Yoshio (Toyota Technological Institute)   p. 87 (P2-11)
Ota, Hiroyuki (MIRAI-ASRC)   p. 63 (S5-5)
Ota, Hiroyuki (MIRAI-ASRC)   p. 121 (S6-2)
Ota, Hiroyuki (MIRAI-ASRC, AIST)   p. 125 (S6-4)
Otsuka, T. (Univ. of Tsukuba)   p. 51 (S4-2)

P

Pan, Tung-Ming (Chang Gung Univ.)   p. 91 (P2-13)
Pan, Tung-Ming (Chang Gung Univ.)   p. 93 (P2-14)
Park, Chan Gyung (POSTECH)   p. 85 (P2-10)
Pei, Yanli (Hiroshima Univ.)   p. 107 (P2-21)
Peng, Hsing Kan (Chang Gung Univ.)   p. 57 (S5-2)
Peng, Hsing-Kan (Chang Gung Univ.)   p. 109 (P2-22)

R

Ramin, M. (Texas Instruments)   p. 139 (S9-1)

S

Sai, Hitoshi (Toyota Technological Institute)   p. 87 (P2-11)
Saito, Masahiro (Toray Research Center, Inc.)   p. 59 (S5-3)
Sakai, Akira (Nagoya Univ.)   p. 23 (P1-4)
Sakashita, Mitsuo (Nagoya Univ.)   p. 23 (P1-4)
Salam, Kazi (MIRAI-ASET)   p. 63 (S5-5)
Sano, Atsushi (Hitachi Kokusai Electric Inc.)   p. 83 (P2-9)
Sano, Itutaku (Waseda Univ.)   p. 37 (P1-11)
Sarkar, C. K. (Jadavpur Univ.)   p. 89 (P2-12)
Sato, Motoyuki (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Seike, Aya (Waseda Univ.)   p. 37 (P1-11)
Sekine, Katsuyuki (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Seko, Akiyoshi (Nagoya Univ.)   p. 23 (P1-4)
Sen, B. (City Univ. of Hong Kong)   p. 89 (P2-12)
Shanware, Ajit (Texas Instruments)   p. 139 (S9-1)
Shiino, Yasuhiro (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Shimamoto, Yasuhiro (Hitachi, Ltd.)   p. 19 (P1-2)
Shimamoto, Yasuhiro (Hitachi, Ltd.)   p. 141 (S9-2)
Shimizu, Tomo (Univ. of Tsukuba)   p. 111 (P2-23)
Shimura, Takayoshi (Osaka Univ.)   p. 53 (S4-3)
Shiraishi, K. (Univ. of Tsukuba)   p. 51 (S4-2)
Shiraishi, Kenji (Univ. of Tsukuba)   p. 61 (S5-4)
Shiraishi, Kenji (Univ. of Tsukuba)   p. 135 (S8-2)
Shiraki, Yasuhiro (Musashi Inst. of Tech.)   p. 103 (P2-19)
Shu, Wei-Hao (Chang Gung Univ.)   p. 91 (P2-13)
Song, Jaeyeol (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Stesmans, Andre (Univ. of Leuven)   p. 127 (S7-1)
Su, Chun-Jung (National Chiao Tung Univ.)   p. 33 (P1-9)
Suemitsu, Maki (Tohoku Univ.)   p. 69 (P2-2)
Sugahara, Yoshiyuki (Fuji Electric Advanced Technology)   p. 117 (P2-26)
Sugimoto, Tomomi (Toray Research Center, Inc.)   p. 59 (S5-3)
Sugimoto, Tomomi (Toray Research Center, Inc.)   p. 113 (P2-24)
Sugino, Shinya (Kyoto Univ.)   p. 79 (P2-7)
Sugiura, Yuuki (Waseda Univ.)   p. 37 (P1-11)
Sugiyama, Naoyuki (Toray Research Center, Inc.)   p. 59 (S5-3)
Suto, Takaya (Tokyo Inst. of Tech.)   p. 103 (P2-19)
Suzuki, Haruhiko (Musashi Inst. of Tech.)   p. 25 (P1-5)

T

Tachi, Kiichi (Tokyo Inst. of Tech.)   p. 29 (P1-7)
Tachibana, Akitomo (Kyoto Univ.)   p. 79 (P2-7)
Takagi, Yoshiteru (Univ. of Tokyo)   p. 97 (P2-16)
Takahashi, Masashi (MIRAI-ASET)   p. 121 (S6-2)
Takahashi, Yuya (Tohoku Univ.)   p. 69 (P2-2)
Takakuwa, Yuji (Tohoku Univ.)   p. 39 (S3-1)
Takakuwa, Yuji (Tohoku Univ.)   p. 41 (S3-2)
Takayanagi, Mariko (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Takenaga, Yasunori (Musashi Inst. of Tech.)   p. 25 (P1-5)
Takeno, Fumito (Toray Research Center, Inc.)   p. 113 (P2-24)
Tamura, Chihiro (Univ. of Tsukuba)   p. 99 (P2-17)
Tamura, Chihiro (Univ. of Tsukuba)   p. 101 (P2-18)
Tanaka, Kousuke (Tohoku Univ.)   p. 115 (P2-25)
Tanaka, Satoshi (Meiji Univ.)   p. 87 (P2-11)
Tange, Tomoyuki (Waseda Univ.)   p. 37 (P1-11)
Teraoka, Yuden (Japan Atomic Energy Agency)   p. 41 (S3-2)
Togashi, Hideaki (Tohoku Univ.)   p. 69 (P2-2)
Tokukawa, Yui (Univ. of Tsukuba)   p. 117 (P2-26)
Tokumitsu, Eisuke (Tokyo Inst. of Tech.)   p. 133 (S8-1)
Tomida, Kazuyuki (Univ. of Tokyo)   p. 123 (S6-3)
Tong, Yi (National Univ. of Singapore)   p. 119 (S6-1)
Torii, Kazuyoshi (Hitachi, Ltd.)   p. 19 (P1-2)
Torii, Kazuyoshi (Selete)   p. 31 (P1-8)
Torii, Kazuyoshi (Hitachi, Ltd.)   p. 135 (S8-2)
Toriumi, Akira (Univ. of Tokyo)   p. 15 (S2-3)
Toriumi, Akira (Univ. of Tokyo)   p. 63 (S5-5)
Toriumi, Akira (Univ. of Tokyo)   p. 65 (S5-6)
Toriumi, Akira (MIRAI-ASRC)   p. 121 (S6-2)
Toriumi, Akira (Univ. of Tokyo)   p. 123 (S6-3)
Toriumi, Akira (Univ. of Tokyo)   p. 125 (S6-4)
Toriumi, Akira (Univ. of Tokyo)   p. 129 (S7-2)
Toyoshima, Yoshiaki (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Tsuchiya, Yoshishige (Tokyo Inst. of Tech.)   p. 103 (P2-19)
Tsutsui, Kazuo (Tokyo Inst. of Tech.)   p. 29 (P1-7)

U

Uda, Tsuyoshi (AdvanceSoft Co.)   p. 97 (P2-16)
Uedono, A. (Univ. of Tsukuba)   p. 51 (S4-2)
Uematsu, Masashi (NTT Basic Research Laboratories)   p. 43 (S3-3)
Uematsu, Masashi (NTT Basic Research Laboratories)   p. 45 (S3-4)
Uematsu, Masashi (NTT Basic Research Laboratories, NTT Co.)   p. 71 (P2-3)
Umezawa, N. (National Institute for Materials Science)   p. 51 (S4-2)

V

Visokay, M.R. (Texas Instruments)   p. 139 (S9-1)

W

Wakui, Sadakazu (Univ. of Electro-Communications)   p. 75 (P2-5)
Wang, Jer-Chyi (Nanya Technology Co.)   p. 109 (P2-22)
Wang, Wenwn (MIRAI-ASRC)   p. 63 (S5-5)
Watanabe, H. (Osaka Univ.)   p. 51 (S4-2)
Watanabe, Heiji (Osaka Univ.)   p. 21 (P1-3)
Watanabe, Heiji (Osaka Univ.)   p. 53 (S4-3)
Watanabe, Heiji (Osaka Univ.)   p. 61 (S5-4)
Watanabe, Kikuo (Hitachi, Ltd.)   p. 141 (S9-2)
Watanabe, Takanobu (Waseda Univ., PRESTO)   p. 47 (S3-5)
Watanabe, Takeshi (Toshiba Co. Semiconductor Company)   p. 55 (S5-1)
Watanabe, Yukihiko (Toyota Central R&D Labs., Inc.)   p. 23 (P1-4)
Wong, C. K. (City Univ. of Hong Kong)   p. 67 (P2-1)
Wong, Hei (City Univ. of Hong Kong)   p. 67 (P2-1)
Wong, Hei (City Univ. of Hong Kong)   p. 89 (P2-12)
Wu, Tin-Wei (Chang Gung Univ.)   p. 93 (P2-14)

Y

Yagihara, Shin (Tokai Univ.)   p. 17 (P1-1)
Yamabe, K. (Univ. of Tsukuba)   p. 51 (S4-2)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 99 (P2-17)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 101 (P2-18)
Yamabe, Kikuo (Univ. of Tsukuba)   p. 117 (P2-26)
Yamada, K. (Waseda Univ.)   p. 51 (S4-2)
Yamada, Keisaku (Waseda Univ.)   p. 61 (S5-4)
Yamada, Renichi (Hitachi, Ltd.)   p. 141 (S9-2)
Yamamoto, Naoya (Ishikawajima-Harima Heavy Industries Co., Ltd.)   p. 87 (P2-11)
Yamamoto, Takashi (Toray Research Center, Inc.)   p. 59 (S5-3)
Yamamoto, Takashi (Toray Research Center, Inc.)   p. 113 (P2-24)
Yamamoto, Takenori (AdvanceSoft Co.)   p. 97 (P2-16)
Yamamoto, Yoshiki (Univ. of Tokyo)   p. 65 (S5-6)
Yamauchi, Jun (Keio Univ.)   p. 77 (P2-6)
Yang, B. L. (City Univ. of Hong Kong)   p. 89 (P2-12)
Yang, Shao-Ming (National Chiao Tung Univ.)   p. 105 (P2-20)
Yang, Shao-Ming (National Chiao Tung Univ.)   p. 137 (S8-3)
Yang, Tsung-Yu (National Chiao Tung Univ.)   p. 33 (P1-9)
Yang, Yo Sep (POSTECH)   p. 85 (P2-10)
Yasutake, Kiyoshi (Osaka Univ.)   p. 21 (P1-3)
Yasutake, Kiyoshi (Osaka Univ.)   p. 53 (S4-3)
Yeh, Wen-Wei (Chang Gung Univ.)   p. 93 (P2-14)
Yoshida, Hironori (Nagoya Univ.)   p. 27 (P1-6)
Yoshida, Hironori (Nagoya Univ.)   p. 95 (P2-15)
Yoshigoe, Akitaka (Japan Atomic Energy Agency)   p. 41 (S3-2)
Yu, Te-Yi (Chang Gung Univ.)   p. 93 (P2-14)

Z

Zaima, Shigeaki (Nagoya Univ.)   p. 23 (P1-4)
Zang, Hui (National Univ. of Singapore)   p. 119 (S6-1)
Zhao, Yi (Univ. of Tokyo)   p. 129 (S7-2)