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9th International Symposium on Control of Semiconductor Interfaces
Technical Program

Remark: The presenter of each abstract is marked with "*".
Author Index:   HERE

Session Schedule

Sunday, September 4, 2022

Registration
15:00 - 18:00
Reception
18:00 - 20:00
Monday, September 5, 2022

Opening Address
9:00 - 9:10
MA1  Plenary
9:10 - 10:30
Coffee break
10:30 - 10:40
MA2  Keynote
10:40 - 12:00
Lunch break
12:00 - 13:00
MP1  Thin Film Growth and Characterization I
13:00 - 15:20
Author's interview/Coffee break
15:20 - 15:40
MP2  Poster session
15:40 - 17:30
Tuesday, September 6, 2022

TuA1  Process and Device Technology
8:50 - 10:20
Author's interview/Coffee break
10:20 - 10:40
TuA2  Formation and Characterization of Nanostructures I
10:40 - 12:30
Lunch break
12:30 - 13:30
TuP1  Surface and Interface Control I
13:30 - 15:20
Author's interview/Coffee break
15:20 - 15:40
TuP2  Thin Film Growth and Characterization II
15:40 - 17:30
Wednesday, September 7, 2022

WA1  Surface and Interface Control II
8:50 - 10:20
Author's interview/Coffee break
10:20 - 10:40
WA2  Thin Film Growth and Characterization III
10:40 - 12:30
Lunch break
12:30 - 13:30
WP1  Formation and Characterization of Nanostructures II
13:30 - 15:20
Author's interview/Coffee break
15:20 - 15:40
WP2  Thin Film Growth and Characterization IV
15:40 - 17:00
Closing Remarks
17:00 - 17:10
Thursday, September 8, 2022

ThA1  Special session I: Semiconductor Researches in New Frontier Research Workshop / JSAP Tokai Chapter
9:00 - 10:30
Coffee break
10:30 - 10:45
ThA2  Special session II: Semiconductor Researches in New Frontier Research Workshop / JSAP Tokai Chapter
10:45 - 12:15
Lunch break
12:15 - 13:30
Labo Tour: cLPS and C-TEFs in Nagoya Univ.
13:30 - 15:00


List of abstracts

Remark: The presenter of each abstract is marked with "*".

Monday, September 5, 2022

[To Session Table]

Session MA1  Plenary
Time: 9:10 - 10:30, Monday, September 5, 2022
Chair: Tetsuya Yamamoto (Kochi Univ. of Tech., Japan)

MA1-1 (Time: 9:10 - 9:50)
Title(Plenary Talk) More Silicon - Deep in the Nanovalley -
Author*Nobuyoshi Koshida (Tokyo Univ. of Agri. and Tech., Japan)

MA1-2 (Time: 9:50 - 10:30)
Title(Plenary Talk) Current Status and Future Challenges of Semi-Conductor Grade Silicon Material Industries in Japan
Author*Satoshi Kondo (Japan Society of Newer Metals, Japan)


[To Session Table]

Session MA2  Keynote
Time: 10:40 - 12:00, Monday, September 5, 2022
Chair: Kenji Shiojima (Univ. of Fukui, Japan)

MA2-1 (Time: 10:40 - 11:20)
Title(Keynote Address) Progress in Power Semiconductor SiC and Future Prospects
Author*Hiroyuki Matsunami (Kyoto Univ., Japan)

MA2-2 (Time: 11:20 - 12:00)
Title(Keynote Address) Future CMOS Device Scaling by Atomic-Scale Interface Control
Author*Naoto Horiguchi (imec, Belgium)


[To Session Table]

Session MP1  Thin Film Growth and Characterization I
Time: 13:00 - 15:20, Monday, September 5, 2022
Chairs: Hiroyuki Kageshima (Shimane Univ., Japan), Masaru Sato (Kitami Inst. of Tech., Japan)

MP1-1 (Time: 13:00 - 13:30)
Title(Invited Paper) Thin Sn films on Ge: From 2D to 3D Growth
Author*Inga Anita Fischer (Brandenburgische Tech. Univ. Cottbus-Senftenberg, Germany)

MP1-2 (Time: 13:30 - 14:00)
Title(Invited Paper) Complex Ge/SiGe Heterostructures for Quantum Cascade Laser Application
Author*Giovanni Capellini (IHP – Leibniz-Institut für innovative Mikroelektronik, Germany)

MP1-3 (Time: 14:00 - 14:20)
TitleSiGe/Ge/SiGe Heterostructures for Quantum Dot Hole Spin Qubits: Surface Treatment and Epitaxial Growth
Author*Kevin-Peter Gradwohl, Yujia Liu, Thomas Schroeder, Torsten Boeck (Leibniz-Institut für Kristallzüchtung, Germany)

MP1-4 (Time: 14:20 - 14:40)
TitleGenetic-Algorithm-Combined Density-Functional-Theory Calculations of Ge1-xSnx Alloy (0.000 < x < 1.000)
Author*Yusuke Noda, Koji Sueoka (Okayama Prefectural Univ., Japan)

MP1-5 (Time: 14:40 - 15:00)
TitleFormation of Ultra-thin Nickel Silicide Layer on SiO2 and Control of Crystalline Phase and Surface Roughness
Author*Keisuke Kimura, Shunsuke Nishimura, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)

MP1-6 (Time: 15:00 - 15:20)
TitleFirst-principles Study on Interfacial Silicon Emission during Silicon Thermal Oxidation
Author*Hiroyuki Kageshima (Shimane Univ., Japan), Toru Akiyama (Mie Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan)


[To Session Table]

Session MP2  Poster session
Time: 15:40 - 17:30, Monday, September 5, 2022

MP2-1
TitleChemical Bath Deposition of Zinc Oxide Nanorods on Very Thin Ga Doped Zinc Oxide Seed Layers and Their Structural and Photoluminescence Properties
Author*Tomoaki Terasako (Ehime Univ., Japan), Masakazu Yagi (National Inst. of Tech., Kagawa College, Japan), Tetsuya Yamamoto (Kochi Univ. of Tech., Japan)

MP2-2
TitlePolarity Control of Polycrystalline ZnO Thin Films Deposited by Magnetron Sputtering on Glass Using an Ultrathin Aluminum Layer
Author*Hisao Makino, Chikato Hata, Nanase Kawahata (Kochi Univ. of Tech., Japan)

MP2-3
TitleNonthermal and Selective Crystal Bridging of ZnO Grains by Irradiation with Electron Beam as Nonequilibrium Reaction Field
Author*Norihiro Shimoi (Tohoku Inst. of Tech., Japan), Shun-Ichiro Tanaka (Tohoku Univ., Japan)

MP2-4
TitleEffects of Surface Polarity of ZnO Substrates on Epitaxial Growth of (ZnO)x(InN)1-x Films Fabricated at Room Temperature
Author*Ryota Narishige, Naoto Yamashita, Kunihiro Kamataki, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Naho Itagaki (Kyushu Univ., Japan)

MP2-5
TitleControl of Residual Stresses in Highly Transparent Conductive Ga-Doped ZnO Films Deposited on Polymer Substrates
Author*Rajasekaran Palani, Hisao Makino, Tetsuya Yamamoto (Kochi Univ. of Tech., Japan)

MP2-6
TitleDurability Evaluation of Multilayer Oxide Thin-Films Formed on Cyclo-Olefin Polymer Substrate by Repeated Bending Tests
Author*Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Yoshiyuki Harada, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech., Japan)

MP2-7
TitleGrowth of Magnesium Gallate Films by Pulsed Laser Deposition
Author*Qixin Guo, Junya Tetsuka, Zewei Chen, Katsuhiko Saito, Tooru Tanaka (Saga Univ., Japan)

MP2-8
TitleSynthesis of Mg2SiO4/MgO Nanostructures using CaSi2 as a Template and their Structural and Optical Properties
Author*Shalika Parakatawella, Riko Yamamoto, Fumio Komeda, Yushin Numazawa (Shizuoka Univ., Japan), Yosuke Shimura (Shizuoka Univ./*Currently at imec, Japan), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ., Japan), Yoshitaka Okada (Univ. of Tokyo, Japan), Hirokazu Tatsuoka (Shizuoka Univ., Japan)

MP2-9
TitleEffects of Rare-earth Eu3+ Distribution on Magnetic and Electrical Properties of Spinel Fe3O4 Thin Films
Author*Haining Li, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki (Univ. of Tokyo, Japan)

MP2-10
TitleEfficient Spin-wave Propagation in High-Quality Epitaxial γ-Fe2O3 Thin Film Grown on Nb:SrTiO3 by 2-step PLD Method
Author*Siyi Tang, Md Shamim Sarker, Kaijie Ma, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki (Univ. of Tokyo, Japan)

MP2-11
TitleBandgap Engineering Though Control of Oxygen Vacancies in Sn-Doped In2O3 Films with the Irradiation of Negatively Charged Oxygen Ions
Author*Tetsuya Yamamoto, Hisao Makino, Rajasekaran Palani (Kochi Univ. of Tech., Japan), Makoto Maehara (Sumitomo Heavy Industries, Japan)

MP2-12
TitlePreparation of Sputtered HfO2 Film for Forming-Free Resistive Random Access Memory
Author*Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech., Japan)

MP2-13
TitleImproved Solid-Phase Crystallization of Sn-Doped Ge Thin Films (≤ 50 nm) on Insulator by a-Si Capping
Author*Takaya Nagano, Ryutaro Hara (Kyushu Univ., Japan), Kenta Moto (Kyushu Univ./JSPS Research Fellow, Japan), Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ., Japan)

MP2-14
TitleStructural and Light-emission Properties of High–density Superatom–like Ge–core/Si–shell Quantum Dots
Author*Katsunori Makihara (Nagoya Univ./IHP, Japan), Yuji Yamamoto (IHP, Germany), Yuki Imai, Noriyuki Taoka (Nagoya Univ., Japan), Markus Andreas Schubert (IHP, Germany), Bernd Tillack (IHP/Tech. Univ. Berlin, Germany), Seiichi Miyazaki (Nagoya Univ., Japan)

MP2-15
TitleFormation and Thermal Conductivity Measurements of Layered Germanane Films for Thermoelectrics
Author*Yuto Uematsu, Tsukasa Terada, Takafumi Ishibe, Yoshiaki Nakamura (Osaka Univ., Japan)

MP2-16
TitleSolid-Phase Crystallization Characteristics of SiSn Thin Film on Insulating Substrates
Author*Kota Okamoto, Tomohiro Kosugi, Taizoh Sadoh (Kyushu Univ., Japan)

MP2-17
TitleThermoelectric Properties of Mg2Si Thin Films Prepared by Thermal Evaporation of Mg on P-doped Polycrystalline Si Thin Films and Face-to-Face Annealing
AuthorKaisei Sato, *Yasuyoshi Kurokawa, Keisuke Shibata (Nagoya Univ., Japan), Shinya Kato (Nagoya Inst. of Tech., Japan), Satoru Miyamoto, Kazuhiro Gotoh, Takashi Itoh, Noritaka Usami (Nagoya Univ., Japan)

MP2-18
TitleFirst-Principles Calculation for Defect Levels of 3d Transition Metals Doped in Silicon Nitride
Author*Yuta Nishigaki, Kiyoteru Kobayashi (Tokai Univ., Japan)

MP2-19
TitleSynthesis and Properties of Arsenic-Based Layered Group-IV Monopnictides for Novel Two-Dimensional Materials
Author*Shu Kagami, Noriyuki Urakami, Yuichiro Suzuki, Yoshio Hashimoto (Shinshu Univ., Japan)

MP2-20
TitleRaman Study of Photoexcited Plasma in GaAs/GaAsBi Heterostructures
Author*Sho Hasegawa, Noriyuki Hasuike, Hiroyuki Nishinaka, Masahiro Yoshimoto (Kyoto Inst. of Tech., Japan)

MP2-21
TitleBand Alignment of CdS/CuInGaSe2 /GaAs (001) Solar Cells
Author*Takehiko Nagai, Hitoshi Tampo, Jiro Nishinaga (AIST, Japan), Yuya Ide, Oki Kojima, Norio Terada (Kagoshima Univ., Japan)

MP2-22
TitleEffects of Growth-Temperature and Surface Reconstruction on Nitrogen Incorporation of GaAsPN Alloys for III-V/Si Photovoltaic Applications
Author*Keisuke Yamane, Junya Fujimoto, Tomoya Arai, Toshiki Takachi, Toshinori Eko, Akihiro Wakahara (Toyohashi Univ. of Tech., Japan)

MP2-23
TitleSchottky Barrier Contact on In0.53Ga0.47As with Transparent Conductive Oxide
Author*Tatsuro Maeda, Kazuaki Oishi, Hiroto Ishii (AIST/Tokyo Univ. of Science, Japan), Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu (AIST, Japan), Akira Endoh, Hiroki Fujishiro (Tokyo Univ. of Science, Japan), Takashi Koida (AIST, Japan)

MP2-24
TitleDeviation of Subthreshold FD-SOI-MOSFETs Using Low-Temperature Sputtering SiO2 Gate Insulator
Author*Wenchang Yeh, Masato Ohya (Shimane Univ., Japan)

MP2-25
TitleFabrication and Characterization of Ge n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator
AuthorWei-Chen Wen, *Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan)

MP2-26
TitleScreening of Low Temperature Gate Oxides for Spin-Based Quantum Computer Approaches
Author*Marco Lisker, Roland Sorge, Andreas Mai (IHP, Germany)

MP2-27
TitleObservation of Chemical Bonding State Change of Ti in HfO2/TiO2/SiO2 Structure by Applying Voltage
Author*Yoshiharu Kirihara, Shunichi Ito, Ryota Tsujiguchi (Tokyo City Univ., Japan), Noriyuki Miyata (AIST, Japan), Hiroshi Nohira (Tokyo City Univ., Japan)

MP2-28
TitleSurface Modification with UV/O3 for ALD-TiO2 Deposition for IDM Device
Author*Shunichi Ito, Yoshiharu Kirihara, Ryousuke Ishikawa, Hiroshi Nohira (Tokyo City Univ., Japan)

MP2-29
TitleFabrication of Nanocomposite Materials Using Structured Silica and Carbon Simultaneously Synthesized from Japan and Philippine Rice Hull
Author*Emie Salamangkit Mirasol, Masaru Shimomura (Shizuoka Univ., Japan)



Tuesday, September 6, 2022

[To Session Table]

Session TuA1  Process and Device Technology
Time: 8:50 - 10:20, Tuesday, September 6, 2022
Chairs: Yasuo Koide (NIMS, Japan), Osamu Nakatsuka (Nagoya Univ., Japan)

TuA1-1 (Time: 8:50 - 9:20)
Title(Invited Paper) Quantitative Analysis of Charge Trap and De-trap in HfO2-FeFET and Their Impacts on Memory Performances
Author*Reika Ichihara, Yusule Higashi, Kunifumi Suzuki, Haruka Kusai, Yoko Yoshimura, Takamasa Hamai, Kota Takahashi, Yuta Kamiya, Kazuhiro Matsuo, Yasushi Nakasaki, Hidenori Miyagawa, Kiwamu Sakuma, Masamichi Suzuki, Yuuichi Kamimuta, Masumi Saitoh (Kioxia, Japan)

TuA1-2 (Time: 9:20 - 9:40)
TitleFirst-Principles Study of the Effect of Hydrogen on Potassium-Ion Electrets
Author*Yoshiki Ohata, Masaaki Araidai (Nagoya Univ., Japan), Takuma Ishiguro, Hiroyuki Mitsuya (Saginomiya Seisakusho, Japan), Hiroshi Toshiyoshi (Univ. of Tokyo, Japan), Yasushi Sibata, Gen Hashiguchi (Shizuoka Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan)

TuA1-3 (Time: 9:40 - 10:00)
TitleHigh Sensitivity Schottky Barrier Ge Photodetectors with Transparent Conductive Oxide Electrodes
Author*Hiroto Ishii (Tokyo Univ. of Science/AIST, Japan), Wen-Hsin Chang, Hiroyuki Ishii, Takashi Koida (AIST, Japan), Hiroki Fujishiro (Tokyo Univ. of Science, Japan), Tatsuro Maeda (AIST/Tokyo Univ. of Science, Japan)

TuA1-4 (Time: 10:00 - 10:20)
TitleOhmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs
Author*Jiangwei Liu, Hirotaka Oosato, Bo Da, Yasuo Koide (NIMS, Japan)


[To Session Table]

Session TuA2  Formation and Characterization of Nanostructures I
Time: 10:40 - 12:30, Tuesday, September 6, 2022
Chairs: Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan), Katsunori Makihara (Nagoya Univ., Japan)

TuA2-1 (Time: 10:40 - 11:10)
Title(Invited Paper) Materials Engineering of Oxide Semiconductors and 2D Materials for Novel Memory-Centric 3D-Integrated Circuits
Author*Aaron Thean (National Univ. of Singapore, Singapore)

TuA2-2 (Time: 11:10 - 11:30)
TitlePhotoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar Cells
Author*Hambalee Mahamu, Shigeo Asahi, Takashi Kita (Kobe Univ., Japan)

TuA2-3 (Time: 11:30 - 11:50)
TitleFormation and Optical Properties of Perovskite Semiconductor Nanodots; First-principles Theoretical Study
Author*Takashi Nakayama, Ami Tomita (Chiba Univ., Japan)

TuA2-4 (Time: 11:50 - 12:10)
TitleAlignment Control of Self-Assembling Si Quantum Dots
Author*Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki (Nagoya Univ., Japan)

TuA2-5 (Time: 12:10 - 12:30)
TitleDot Size Dependence of Electron Emission from Si-QDs Multiple-Stacked Structures
Author*Shuji Obayashi, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki (Nagoya Univ., Japan)


[To Session Table]

Session TuP1  Surface and Interface Control I
Time: 13:30 - 15:20, Tuesday, September 6, 2022
Chairs: Atsushi Oshiyama (Nagoya Univ., Japan), Takashi Tokumasu (Tohoku Univ., Japan)

TuP1-1 (Time: 13:30 - 14:00)
Title(Invited Paper) Reactive Force-field Molecular Dynamics and DFT Simulations for the Thin Film Growth by CVD and ALD Techniques
Author*Takashi Tokumasu, Naoya Uene, Takuya Mabuchi (Tohoku Univ., Japan), Masaru Zaitsu, Shigeo Yasuhara (Japan Advanced Chemicals, Japan)

TuP1-2 (Time: 14:00 - 14:20)
TitleResearch on Ligand Free Quantum Dots Light-Emitting Materials and Devices
Author*Tadahiko Hirai (CSIRO, Australia), Masaru Tachibana (Yokohama City Univ., Japan), Tetsuo Tsuchiya (AIST, Japan)

TuP1-3 (Time: 14:20 - 14:40)
TitleTrimethyl Aluminum Adsorption on Tris(dimethylamino)silane Saturated Surfaces for Aluminum-Silicate Atomic Layer Deposition
Author*Fumihiko Hirose (Yamagata Univ., Japan)

TuP1-4 (Time: 14:40 - 15:00)
TitleMicroscopic Characterization of the Interface between GaN and its Gate Oxide (Al2O3)1-x(SiO2)x by the Density-Functional Calculations
AuthorKenta Chokawa, Kenji Shiraishi, *Atsushi Oshiyama (Nagoya Univ., Japan)

TuP1-5 (Time: 15:00 - 15:20)
TitleComparison of the Stress Dependent Injection of Intrinsic Point Defects from the Interfaces of PECVD Oxides, Nitrides, and Amorphous Silicon Layers on Silicon
Author*Gudrun Kissinger, Dawid Kot, Marco Lisker (IHP- Leibniz Institute High Performance Microelectronics, Germany)


[To Session Table]

Session TuP2  Thin Film Growth and Characterization II
Time: 15:40 - 17:30, Tuesday, September 6, 2022
Chairs: Akira Sakai (Osaka Univ., Japan), Taizoh Sadoh (Kyushu Univ., Japan)

TuP2-1 (Time: 15:40 - 16:10)
Title(Invited Paper) Control of Interfaces in Thin-Film Solar Cells Assisted by Electron Microscopy
Author*Daniel Abou-Ras (Helmholtz-Zentrum Berlin, Germany)

TuP2-2 (Time: 16:10 - 16:30)
TitleControl of Crystal Structure and Magnetic Properties of ZnO: Co Films Grown by Magnetron Sputtering Using Nitrogen
Author*Agusutrisno Marlis Nurut, Ryota Narishige, Naoto Yamashita, Kunihiro Kamataki, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Naho Itagaki (Kyushu Univ., Japan)

TuP2-3 (Time: 16:30 - 16:50)
TitleEffect of Deposition Conditions for Precursor on the Properties of Solid-Phase Crystallized In2O3 Transparent Conductive Films
Author*Junichi Nomoto, Takashi Koida, Iwao Yamaguchi, Tetsuo Tsuchiya (AIST, Japan)

TuP2-4 (Time: 16:50 - 17:10)
TitleFabrication of Low-Resistive Amorphous In2O3:Sn Films at 600°C by Magnetron Sputtering Using Nitrogen
Author*Naho Itagaki, Yuta Mido, Zhiyuan Shen, Naoto Yamashita, Takamasa Okumura, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani (Kyushu Univ., Japan)

TuP2-5 (Time: 17:10 - 17:30)
TitleFirst-Principles Analysis of Oxygen Vacancy Behavior in Rutile TiO2 under External Electric Fields
Author*Masaki Ninomiya, Yusuke Hayashi, Akira Sakai, Tetsuya Tohei (Osaka Univ., Japan)



Wednesday, September 7, 2022

[To Session Table]

Session WA1  Surface and Interface Control II
Time: 8:50 - 10:20, Wednesday, September 7, 2022
Chairs: Takayuki Harada (NIMS, Japan), Koji Kita (Univ. of Tokyo, Japan)

WA1-1 (Time: 8:50 - 9:20)
Title(Invited Paper) Polar Interfaces of a High-Conductivity Layered Oxide PdCoO2 and Wide-Bandgap Semiconductors
Author*Takayuki Harada (NIMS, Japan)

WA1-2 (Time: 9:20 - 9:40)
TitleClassical-Size-Effect Model for W-Doped In2O3 Films with Thicknesses of Less Than 10 nm Obtained by Solid-Phase Crystallization
Author*Tetsuya Yamamoto, Hisao Makino, Rajasekaran Palani (Kochi Univ. of Tech., Japan), Makoto Maehara (Sumitomo Heavy Industries, Japan)

WA1-3 (Time: 9:40 - 10:00)
TitleDrastically Reduced Compositional Fluctuation and Indium Incorporation in InGaN QWs Grown on Vicinal Substrates Using Eu-doped GaN Interlayers
Author*Reo Yamato, Shuhei Ichikawa, Atsushi Takeo, Jun Tatebayashi, Yasufumi Fujiwara (Osaka Univ., Japan)

WA1-4 (Time: 10:00 - 10:20)
TitleConduction Mechanism of Schottky Barrier Diodes Fabricated on Single Threading Dislocations in an HVPE-GaN Substrate
Author*Toshikazu Sato, Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai (Osaka Univ., Japan)


[To Session Table]

Session WA2  Thin Film Growth and Characterization III
Time: 10:40 - 12:30, Wednesday, September 7, 2022
Chairs: Hiroki Imabayashi (Univ. of Fukui, Japan), Takuma Kobayashi (Osaka Univ., Japan)

WA2-1 (Time: 10:40 - 11:10)
Title(Invited Paper) Reliability Issues in Nitrided SiC MOS Devices
Author*Takuma Kobayashi, Takato Nakanuma, Asato Suzuki (Osaka Univ., Japan), Mitsuru Sometani, Mitsuo Okamoto (AIST, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)

WA2-2 (Time: 11:10 - 11:30)
TitleAnalytical Models for Step-Velocity-Dependent Impurity Concentrations in Vapor-Phase Epitaxially Grown SiC and GaN
Author*Kazuhiro Mochizuki (Hosei Univ., Japan), Fumimasa Horikiri (SCIOCS, Japan), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ., Japan)

WA2-3 (Time: 11:30 - 11:50)
TitleMapping of Ultra-High-Pressure Annealed n-GaN Schottky Contacts Using Internal Photoemission Microscopy
Author*Hiroki Imabayashi, Kenji Shiojima (Univ. of Fukui, Japan), Tetsu Kachi (Nagoya Univ., Japan)

WA2-4 (Time: 11:50 - 12:10)
TitleKinetic Study of SiC Surface Nitridation in N2 Ambient with Simultaneous Oxidation in Passive and Active Oxidation Modes
Author*Tianlin Yang, Koji Kita (Univ. of Tokyo, Japan)

WA2-5 (Time: 12:10 - 12:30)
TitleEffects of Amplitude Modulated RF Discharge on Properties of SiO2 Films Deposited by TEOS/O2/Ar Plasma-Enhanced Chemical Vapor Deposition
Author*Kunihiro Kamataki, Akihiro Yamamoto, Iori Nagao, Yuma Yamamoto, Daisuke Yamashita, Takamasa Okumura, Naoto Yamashita, Naho Itagaki (Kyushu Univ., Japan), Kazunori Koga (Kyushu Univ./National Institutes of Natural Sciences, Japan), Masaharu Shiratani (Kyushu Univ., Japan)


[To Session Table]

Session WP1  Formation and Characterization of Nanostructures II
Time: 13:30 - 15:20, Wednesday, September 7, 2022
Chairs: Takashi Koida (AIST, Japan), Norio Terada (Kagoshima Univ., Japan)

WP1-1 (Time: 13:30 - 14:00)
Title(Invited Paper) Depth Directional Profiles of Electronic Structure in Chalcogenide Absorber-Based Solar Cells
Author*Norio Terada (Kagoshima Univ., Japan)

WP1-2 (Time: 14:00 - 14:20)
TitleSn-driven Self-formation of Ge1−xSnx Nanodots on Insulator for Multi-layered Quantum Dots Structure
Author*Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Masashi Kurosawa, Osamu Nakatsuka (Nagoya Univ., Japan)

WP1-3 (Time: 14:20 - 14:40)
TitleSurface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111)
Author*Keigo Matsushita, Akio Ohta, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)

WP1-4 (Time: 14:40 - 15:00)
TitleSpectroscopic Study of Quantum-confinement in Ultrathin-body GeOI
Author*Yuhsuke Yasutake, Takumi Kohei (Univ. of Tokyo, Japan), Wen Hsin Chang, Hiroto Ishii, Toshifumi Irisawa, Tatsuro Maeda (AIST, Japan), Susumu Fukatsu (Univ. of Tokyo, Japan)

WP1-5 (Time: 15:00 - 15:20)
TitleMolecular Beam Epitaxy of CaGe2 Layers on Si(111) Substrate
Author*Kazuya Okada, Shigehisa Shibayama, Osamu Nakatsuka, Masashi Kurosawa (Nagoya Univ., Japan)


[To Session Table]

Session WP2  Thin Film Growth and Characterization IV
Time: 15:40 - 17:00, Wednesday, September 7, 2022
Chair: Hisao Makino (Kochi Univ. of Tech., Japan)

WP2-1 (Time: 15:40 - 16:00)
TitleSpin Wave Characteristics of Spin Frustrated System of Co and Si-substituted Y3Fe5O12Thin Films
Author*Kenyu Terao, Md Shamim Sarker, Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata (Univ. of Tokyo, Japan)

WP2-2 (Time: 16:00 - 16:20)
TitleInterface Property of Floating-Gate Memory Structure with LaBxNy Insulator and N-doped LaB6 Metal Layer Formed on Si(100) by Quasi-Static C-V Measurement
Author*Eun-Ki Hong, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan)

WP2-3 (Time: 16:20 - 16:40)
TitleEffect of Off-angle on the Epitaxial Growth of MoS2 on Off-angle Sapphire by Metal-organic Chemical Vapor Deposition
Author*Myeongok Kim, Nazmul Ahsan (Univ. of Tokyo, Japan), Chen Chen (Pennsylvania State Univ., USA), Dorota A. Kowalczyk (Univ. of Lodz, Poland), Nicholas Trainor, Joan M. Redwing (Pennsylvania State Univ., USA), Yoshitaka Okada (Univ. of Tokyo, Japan)

WP2-4 (Time: 16:40 - 17:00)
TitleEffects of Modification of Film Interface by Nanoparticles on Mechanical Properties of Films
Author*Shinjiro Ono, Sung Hwa Hwang, Takamasa Okumura (Kyushu Univ., Japan), Kazunori Koga (Kyushu Univ./National Institutes of Natural Sciences, Japan), Kunihiro Kamataki, Naoto Yamashita, Naho Itagaki, Masaharu Shiratani (Kyushu Univ., Japan)



Thursday, September 8, 2022

[To Session Table]

Session ThA1  Special session I: Semiconductor Researches in New Frontier Research Workshop / JSAP Tokai Chapter
Time: 9:00 - 10:30, Thursday, September 8, 2022
Chair: Masashi Kurosawa (Nagoya Univ., Japan)

ThA1-1 (Time: 9:00 - 9:30)
Title(Session Invited Paper) Defect Recognition and Evaluation of SiC Wafers for Power Device Application
Author*Shunta Harada (Nagoya Univ., Japan)

ThA1-2 (Time: 9:30 - 10:00)
Title(Session Invited Paper) Strain Engineering for Enhancement of Hole Mobility in Silicon
Author*Keisuke Arimoto (Univ. of Yamanashi, Japan)

ThA1-3 (Time: 10:00 - 10:30)
Title(Session Invited Paper) Single Crystal Photocatalytic Oxides: Carrier Recombination and Solar-to-hydrogen Conversion
Author*Masashi Kato (Nagoya Inst. of Tech., Japan)


[To Session Table]

Session ThA2  Special session II: Semiconductor Researches in New Frontier Research Workshop / JSAP Tokai Chapter
Time: 10:45 - 12:15, Thursday, September 8, 2022
Chair: Keisuke Arimoto (Univ. of Yamanashi, Japan)

ThA2-1 (Time: 10:45 - 11:15)
Title(Session Invited Paper) Polarity Control of Sputter-Deposited AlN with High-Temperature Face-to-Face Annealing
Author*Kanako Shojiki (Mie Univ./Osaka Univ., Japan), Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ., Japan)

ThA2-2 (Time: 11:15 - 11:45)
Title(Session Invited Paper) Study of Quantum Confinement Effects in Si/SiO2 Superlattices for Solar Cell Applications
Author*Shigeru Yamada (Gifu Univ., Japan)

ThA2-3 (Time: 11:45 - 12:15)
Title(Session Invited Paper) CVD Growth and Photonic Device Application of Ge Strip Structure on Si
Author*Yasuhiko Ishikawa, Jose A. Piedra-Lorenzana, Takeshi Hizawa (Toyohashi Univ. of Tech., Japan), Junichi Fujikata (Tokushima Univ./PETRA, Japan)