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| Monday, September 5, 2022 |
| Title | (Plenary Talk) More Silicon - Deep in the Nanovalley - |
| Author | *Nobuyoshi Koshida (Tokyo Univ. of Agri. and Tech., Japan) |
| Page | pp. 1 - 4 |
| Title | (Plenary Talk) Current Status and Future Challenges of Semi-Conductor Grade Silicon Material Industries in Japan |
| Author | *Satoshi Kondo (Japan Society of Newer Metals, Japan) |
| Page | pp. 5 - 6 |
| Title | (Keynote Address) Progress in Power Semiconductor SiC and Future Prospects |
| Author | *Hiroyuki Matsunami (Kyoto Univ., Japan) |
| Page | pp. 7 - 10 |
| Title | (Keynote Address) Future CMOS Device Scaling by Atomic-Scale Interface Control |
| Author | *Naoto Horiguchi (imec, Belgium) |
| Page | pp. 11 - 14 |
| Title | (Invited Paper) Thin Sn films on Ge: From 2D to 3D Growth |
| Author | *Inga Anita Fischer (Brandenburgische Tech. Univ. Cottbus-Senftenberg, Germany) |
| Page | pp. 15 - 16 |
| Title | (Invited Paper) Complex Ge/SiGe Heterostructures for Quantum Cascade Laser Application |
| Author | *Giovanni Capellini (IHP – Leibniz-Institut für innovative Mikroelektronik, Germany) |
| Page | pp. 17 - 18 |
| Title | SiGe/Ge/SiGe Heterostructures for Quantum Dot Hole Spin Qubits: Surface Treatment and Epitaxial Growth |
| Author | *Kevin-Peter Gradwohl, Yujia Liu, Thomas Schroeder, Torsten Boeck (Leibniz-Institut für Kristallzüchtung, Germany) |
| Page | pp. 19 - 20 |
| Title | Genetic-Algorithm-Combined Density-Functional-Theory Calculations of Ge1-xSnx Alloy (0.000 < x < 1.000) |
| Author | *Yusuke Noda, Koji Sueoka (Okayama Prefectural Univ., Japan) |
| Page | pp. 21 - 22 |
| Title | Formation of Ultra-thin Nickel Silicide Layer on SiO2 and Control of Crystalline Phase and Surface Roughness |
| Author | *Keisuke Kimura, Shunsuke Nishimura, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 23 - 24 |
| Title | First-principles Study on Interfacial Silicon Emission during Silicon Thermal Oxidation |
| Author | *Hiroyuki Kageshima (Shimane Univ., Japan), Toru Akiyama (Mie Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan) |
| Page | pp. 25 - 26 |
| Title | Chemical Bath Deposition of Zinc Oxide Nanorods on Very Thin Ga Doped Zinc Oxide Seed Layers and Their Structural and Photoluminescence Properties |
| Author | *Tomoaki Terasako (Ehime Univ., Japan), Masakazu Yagi (National Inst. of Tech., Kagawa College, Japan), Tetsuya Yamamoto (Kochi Univ. of Tech., Japan) |
| Page | pp. 27 - 28 |
| Title | Polarity Control of Polycrystalline ZnO Thin Films Deposited by Magnetron Sputtering on Glass Using an Ultrathin Aluminum Layer |
| Author | *Hisao Makino, Chikato Hata, Nanase Kawahata (Kochi Univ. of Tech., Japan) |
| Page | pp. 29 - 30 |
| Title | Nonthermal and Selective Crystal Bridging of ZnO Grains by Irradiation with Electron Beam as Nonequilibrium Reaction Field |
| Author | *Norihiro Shimoi (Tohoku Inst. of Tech., Japan), Shun-Ichiro Tanaka (Tohoku Univ., Japan) |
| Page | pp. 31 - 32 |
| Title | Effects of Surface Polarity of ZnO Substrates on Epitaxial Growth of (ZnO)x(InN)1-x Films Fabricated at Room Temperature |
| Author | *Ryota Narishige, Naoto Yamashita, Kunihiro Kamataki, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Naho Itagaki (Kyushu Univ., Japan) |
| Page | pp. 33 - 34 |
| Title | Control of Residual Stresses in Highly Transparent Conductive Ga-Doped ZnO Films Deposited on Polymer Substrates |
| Author | *Rajasekaran Palani, Hisao Makino, Tetsuya Yamamoto (Kochi Univ. of Tech., Japan) |
| Page | pp. 35 - 36 |
| Title | Durability Evaluation of Multilayer Oxide Thin-Films Formed on Cyclo-Olefin Polymer Substrate by Repeated Bending Tests |
| Author | *Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Yoshiyuki Harada, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech., Japan) |
| Page | pp. 37 - 38 |
| Title | Growth of Magnesium Gallate Films by Pulsed Laser Deposition |
| Author | *Qixin Guo, Junya Tetsuka, Zewei Chen, Katsuhiko Saito, Tooru Tanaka (Saga Univ., Japan) |
| Page | pp. 39 - 40 |
| Title | Synthesis of Mg2SiO4/MgO Nanostructures using CaSi2 as a Template and their Structural and Optical Properties |
| Author | *Shalika Parakatawella, Riko Yamamoto, Fumio Komeda, Yushin Numazawa (Shizuoka Univ., Japan), Yosuke Shimura (Shizuoka Univ./*Currently at imec, Japan), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ., Japan), Yoshitaka Okada (Univ. of Tokyo, Japan), Hirokazu Tatsuoka (Shizuoka Univ., Japan) |
| Page | pp. 41 - 42 |
| Title | Effects of Rare-earth Eu3+ Distribution on Magnetic and Electrical Properties of Spinel Fe3O4 Thin Films |
| Author | *Haining Li, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki (Univ. of Tokyo, Japan) |
| Page | pp. 43 - 44 |
| Title | Efficient Spin-wave Propagation in High-Quality Epitaxial γ-Fe2O3 Thin Film Grown on Nb:SrTiO3 by 2-step PLD Method |
| Author | *Siyi Tang, Md Shamim Sarker, Kaijie Ma, Hiroyasu Yamahara, Hitoshi Tabata, Munetoshi Seki (Univ. of Tokyo, Japan) |
| Page | pp. 45 - 46 |
| Title | Bandgap Engineering Though Control of Oxygen Vacancies in Sn-Doped In2O3 Films with the Irradiation of Negatively Charged Oxygen Ions |
| Author | *Tetsuya Yamamoto, Hisao Makino, Rajasekaran Palani (Kochi Univ. of Tech., Japan), Makoto Maehara (Sumitomo Heavy Industries, Japan) |
| Page | pp. 47 - 48 |
| Title | Preparation of Sputtered HfO2 Film for Forming-Free Resistive Random Access Memory |
| Author | *Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech., Japan) |
| Page | pp. 49 - 50 |
| Title | Improved Solid-Phase Crystallization of Sn-Doped Ge Thin Films (≤ 50 nm) on Insulator by a-Si Capping |
| Author | *Takaya Nagano, Ryutaro Hara (Kyushu Univ., Japan), Kenta Moto (Kyushu Univ./JSPS Research Fellow, Japan), Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ., Japan) |
| Page | pp. 51 - 52 |
| Title | Structural and Light-emission Properties of High–density Superatom–like Ge–core/Si–shell Quantum Dots |
| Author | *Katsunori Makihara (Nagoya Univ./IHP, Japan), Yuji Yamamoto (IHP, Germany), Yuki Imai, Noriyuki Taoka (Nagoya Univ., Japan), Markus Andreas Schubert (IHP, Germany), Bernd Tillack (IHP/Tech. Univ. Berlin, Germany), Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 53 - 54 |
| Title | Formation and Thermal Conductivity Measurements of Layered Germanane Films for Thermoelectrics |
| Author | *Yuto Uematsu, Tsukasa Terada, Takafumi Ishibe, Yoshiaki Nakamura (Osaka Univ., Japan) |
| Page | pp. 55 - 56 |
| Title | Solid-Phase Crystallization Characteristics of SiSn Thin Film on Insulating Substrates |
| Author | *Kota Okamoto, Tomohiro Kosugi, Taizoh Sadoh (Kyushu Univ., Japan) |
| Page | pp. 57 - 58 |
| Title | Thermoelectric Properties of Mg2Si Thin Films Prepared by Thermal Evaporation of Mg on P-doped Polycrystalline Si Thin Films and Face-to-Face Annealing |
| Author | Kaisei Sato, *Yasuyoshi Kurokawa, Keisuke Shibata (Nagoya Univ., Japan), Shinya Kato (Nagoya Inst. of Tech., Japan), Satoru Miyamoto, Kazuhiro Gotoh, Takashi Itoh, Noritaka Usami (Nagoya Univ., Japan) |
| Page | pp. 59 - 60 |
| Title | First-Principles Calculation for Defect Levels of 3d Transition Metals Doped in Silicon Nitride |
| Author | *Yuta Nishigaki, Kiyoteru Kobayashi (Tokai Univ., Japan) |
| Page | pp. 61 - 62 |
| Title | Synthesis and Properties of Arsenic-Based Layered Group-IV Monopnictides for Novel Two-Dimensional Materials |
| Author | *Shu Kagami, Noriyuki Urakami, Yuichiro Suzuki, Yoshio Hashimoto (Shinshu Univ., Japan) |
| Page | pp. 63 - 64 |
| Title | Raman Study of Photoexcited Plasma in GaAs/GaAsBi Heterostructures |
| Author | *Sho Hasegawa, Noriyuki Hasuike, Hiroyuki Nishinaka, Masahiro Yoshimoto (Kyoto Inst. of Tech., Japan) |
| Page | pp. 65 - 66 |
| Title | Band Alignment of CdS/CuInGaSe2 /GaAs (001) Solar Cells |
| Author | *Takehiko Nagai, Hitoshi Tampo, Jiro Nishinaga (AIST, Japan), Yuya Ide, Oki Kojima, Norio Terada (Kagoshima Univ., Japan) |
| Page | pp. 67 - 68 |
| Title | Effects of Growth-Temperature and Surface Reconstruction on Nitrogen Incorporation of GaAsPN Alloys for III-V/Si Photovoltaic Applications |
| Author | *Keisuke Yamane, Junya Fujimoto, Tomoya Arai, Toshiki Takachi, Toshinori Eko, Akihiro Wakahara (Toyohashi Univ. of Tech., Japan) |
| Page | pp. 69 - 70 |
| Title | Schottky Barrier Contact on In0.53Ga0.47As with Transparent Conductive Oxide |
| Author | *Tatsuro Maeda, Kazuaki Oishi, Hiroto Ishii (AIST/Tokyo Univ. of Science, Japan), Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu (AIST, Japan), Akira Endoh, Hiroki Fujishiro (Tokyo Univ. of Science, Japan), Takashi Koida (AIST, Japan) |
| Page | pp. 71 - 72 |
| Title | Deviation of Subthreshold FD-SOI-MOSFETs Using Low-Temperature Sputtering SiO2 Gate Insulator |
| Author | *Wenchang Yeh, Masato Ohya (Shimane Univ., Japan) |
| Page | pp. 73 - 74 |
| Title | Fabrication and Characterization of Ge n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator |
| Author | Wei-Chen Wen, *Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan) |
| Page | pp. 75 - 76 |
| Title | Screening of Low Temperature Gate Oxides for Spin-Based Quantum Computer Approaches |
| Author | *Marco Lisker, Roland Sorge, Andreas Mai (IHP, Germany) |
| Page | pp. 77 - 78 |
| Title | Observation of Chemical Bonding State Change of Ti in HfO2/TiO2/SiO2 Structure by Applying Voltage |
| Author | *Yoshiharu Kirihara, Shunichi Ito, Ryota Tsujiguchi (Tokyo City Univ., Japan), Noriyuki Miyata (AIST, Japan), Hiroshi Nohira (Tokyo City Univ., Japan) |
| Page | pp. 79 - 80 |
| Title | Surface Modification with UV/O3 for ALD-TiO2 Deposition for IDM Device |
| Author | *Shunichi Ito, Yoshiharu Kirihara, Ryousuke Ishikawa, Hiroshi Nohira (Tokyo City Univ., Japan) |
| Page | pp. 81 - 82 |
| Title | Fabrication of Nanocomposite Materials Using Structured Silica and Carbon Simultaneously Synthesized from Japan and Philippine Rice Hull |
| Author | *Emie Salamangkit Mirasol, Masaru Shimomura (Shizuoka Univ., Japan) |
| Page | pp. 83 - 84 |
| Tuesday, September 6, 2022 |
| Title | (Invited Paper) Quantitative Analysis of Charge Trap and De-trap in HfO2-FeFET and Their Impacts on Memory Performances |
| Author | *Reika Ichihara, Yusule Higashi, Kunifumi Suzuki, Haruka Kusai, Yoko Yoshimura, Takamasa Hamai, Kota Takahashi, Yuta Kamiya, Kazuhiro Matsuo, Yasushi Nakasaki, Hidenori Miyagawa, Kiwamu Sakuma, Masamichi Suzuki, Yuuichi Kamimuta, Masumi Saitoh (Kioxia, Japan) |
| Page | pp. 85 - 86 |
| Title | First-Principles Study of the Effect of Hydrogen on Potassium-Ion Electrets |
| Author | *Yoshiki Ohata, Masaaki Araidai (Nagoya Univ., Japan), Takuma Ishiguro, Hiroyuki Mitsuya (Saginomiya Seisakusho, Japan), Hiroshi Toshiyoshi (Univ. of Tokyo, Japan), Yasushi Sibata, Gen Hashiguchi (Shizuoka Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan) |
| Page | pp. 87 - 88 |
| Title | High Sensitivity Schottky Barrier Ge Photodetectors with Transparent Conductive Oxide Electrodes |
| Author | *Hiroto Ishii (Tokyo Univ. of Science/AIST, Japan), Wen-Hsin Chang, Hiroyuki Ishii, Takashi Koida (AIST, Japan), Hiroki Fujishiro (Tokyo Univ. of Science, Japan), Tatsuro Maeda (AIST/Tokyo Univ. of Science, Japan) |
| Page | pp. 89 - 90 |
| Title | Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs |
| Author | *Jiangwei Liu, Hirotaka Oosato, Bo Da, Yasuo Koide (NIMS, Japan) |
| Page | pp. 91 - 92 |
| Title | (Invited Paper) Materials Engineering of Oxide Semiconductors and 2D Materials for Novel Memory-Centric 3D-Integrated Circuits |
| Author | *Aaron Thean (National Univ. of Singapore, Singapore) |
| Page | pp. 93 - 94 |
| Title | Photoluminescence Characteristics of InAs Quantum Dots in the Doubled-heterointerface of AlGaAs/GaAs-based Two-step Photon Up-conversion Solar Cells |
| Author | *Hambalee Mahamu, Shigeo Asahi, Takashi Kita (Kobe Univ., Japan) |
| Page | pp. 95 - 96 |
| Title | Formation and Optical Properties of Perovskite Semiconductor Nanodots; First-principles Theoretical Study |
| Author | *Takashi Nakayama, Ami Tomita (Chiba Univ., Japan) |
| Page | pp. 97 - 98 |
| Title | Alignment Control of Self-Assembling Si Quantum Dots |
| Author | *Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 99 - 100 |
| Title | Dot Size Dependence of Electron Emission from Si-QDs Multiple-Stacked Structures |
| Author | *Shuji Obayashi, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 101 - 102 |
| Title | (Invited Paper) Reactive Force-field Molecular Dynamics and DFT Simulations for the Thin Film Growth by CVD and ALD Techniques |
| Author | *Takashi Tokumasu, Naoya Uene, Takuya Mabuchi (Tohoku Univ., Japan), Masaru Zaitsu, Shigeo Yasuhara (Japan Advanced Chemicals, Japan) |
| Page | pp. 103 - 106 |
| Title | Research on Ligand Free Quantum Dots Light-Emitting Materials and Devices |
| Author | *Tadahiko Hirai (CSIRO, Australia), Masaru Tachibana (Yokohama City Univ., Japan), Tetsuo Tsuchiya (AIST, Japan) |
| Page | pp. 107 - 108 |
| Title | Trimethyl Aluminum Adsorption on Tris(dimethylamino)silane Saturated Surfaces for Aluminum-Silicate Atomic Layer Deposition |
| Author | *Fumihiko Hirose (Yamagata Univ., Japan) |
| Page | pp. 109 - 110 |
| Title | Microscopic Characterization of the Interface between GaN and its Gate Oxide (Al2O3)1-x(SiO2)x by the Density-Functional Calculations |
| Author | Kenta Chokawa, Kenji Shiraishi, *Atsushi Oshiyama (Nagoya Univ., Japan) |
| Page | pp. 111 - 112 |
| Title | Comparison of the Stress Dependent Injection of Intrinsic Point Defects from the Interfaces of PECVD Oxides, Nitrides, and Amorphous Silicon Layers on Silicon |
| Author | *Gudrun Kissinger, Dawid Kot, Marco Lisker (IHP- Leibniz Institute High Performance Microelectronics, Germany) |
| Page | pp. 113 - 114 |
| Title | (Invited Paper) Control of Interfaces in Thin-Film Solar Cells Assisted by Electron Microscopy |
| Author | *Daniel Abou-Ras (Helmholtz-Zentrum Berlin, Germany) |
| Page | pp. 115 - 116 |
| Title | Control of Crystal Structure and Magnetic Properties of ZnO: Co Films Grown by Magnetron Sputtering Using Nitrogen |
| Author | *Agusutrisno Marlis Nurut, Ryota Narishige, Naoto Yamashita, Kunihiro Kamataki, Takamasa Okumura, Kazunori Koga, Masaharu Shiratani, Naho Itagaki (Kyushu Univ., Japan) |
| Page | pp. 117 - 118 |
| Title | Effect of Deposition Conditions for Precursor on the Properties of Solid-Phase Crystallized In2O3 Transparent Conductive Films |
| Author | *Junichi Nomoto, Takashi Koida, Iwao Yamaguchi, Tetsuo Tsuchiya (AIST, Japan) |
| Page | pp. 119 - 120 |
| Title | Fabrication of Low-Resistive Amorphous In2O3:Sn Films at 600°C by Magnetron Sputtering Using Nitrogen |
| Author | *Naho Itagaki, Yuta Mido, Zhiyuan Shen, Naoto Yamashita, Takamasa Okumura, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani (Kyushu Univ., Japan) |
| Page | pp. 121 - 122 |
| Title | First-Principles Analysis of Oxygen Vacancy Behavior in Rutile TiO2 under External Electric Fields |
| Author | *Masaki Ninomiya, Yusuke Hayashi, Akira Sakai, Tetsuya Tohei (Osaka Univ., Japan) |
| Page | pp. 123 - 124 |
| Wednesday, September 7, 2022 |
| Title | (Invited Paper) Polar Interfaces of a High-Conductivity Layered Oxide PdCoO2 and Wide-Bandgap Semiconductors |
| Author | *Takayuki Harada (NIMS, Japan) |
| Page | pp. 125 - 128 |
| Title | Classical-Size-Effect Model for W-Doped In2O3 Films with Thicknesses of Less Than 10 nm Obtained by Solid-Phase Crystallization |
| Author | *Tetsuya Yamamoto, Hisao Makino, Rajasekaran Palani (Kochi Univ. of Tech., Japan), Makoto Maehara (Sumitomo Heavy Industries, Japan) |
| Page | pp. 129 - 130 |
| Title | Drastically Reduced Compositional Fluctuation and Indium Incorporation in InGaN QWs Grown on Vicinal Substrates Using Eu-doped GaN Interlayers |
| Author | *Reo Yamato, Shuhei Ichikawa, Atsushi Takeo, Jun Tatebayashi, Yasufumi Fujiwara (Osaka Univ., Japan) |
| Page | pp. 131 - 132 |
| Title | Conduction Mechanism of Schottky Barrier Diodes Fabricated on Single Threading Dislocations in an HVPE-GaN Substrate |
| Author | *Toshikazu Sato, Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai (Osaka Univ., Japan) |
| Page | pp. 133 - 134 |
| Title | (Invited Paper) Reliability Issues in Nitrided SiC MOS Devices |
| Author | *Takuma Kobayashi, Takato Nakanuma, Asato Suzuki (Osaka Univ., Japan), Mitsuru Sometani, Mitsuo Okamoto (AIST, Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan) |
| Page | pp. 135 - 136 |
| Title | Analytical Models for Step-Velocity-Dependent Impurity Concentrations in Vapor-Phase Epitaxially Grown SiC and GaN |
| Author | *Kazuhiro Mochizuki (Hosei Univ., Japan), Fumimasa Horikiri (SCIOCS, Japan), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ., Japan) |
| Page | pp. 137 - 138 |
| Title | Mapping of Ultra-High-Pressure Annealed n-GaN Schottky Contacts Using Internal Photoemission Microscopy |
| Author | *Hiroki Imabayashi, Kenji Shiojima (Univ. of Fukui, Japan), Tetsu Kachi (Nagoya Univ., Japan) |
| Page | pp. 139 - 140 |
| Title | Kinetic Study of SiC Surface Nitridation in N2 Ambient with Simultaneous Oxidation in Passive and Active Oxidation Modes |
| Author | *Tianlin Yang, Koji Kita (Univ. of Tokyo, Japan) |
| Page | pp. 141 - 142 |
| Title | Effects of Amplitude Modulated RF Discharge on Properties of SiO2 Films Deposited by TEOS/O2/Ar Plasma-Enhanced Chemical Vapor Deposition |
| Author | *Kunihiro Kamataki, Akihiro Yamamoto, Iori Nagao, Yuma Yamamoto, Daisuke Yamashita, Takamasa Okumura, Naoto Yamashita, Naho Itagaki (Kyushu Univ., Japan), Kazunori Koga (Kyushu Univ./National Institutes of Natural Sciences, Japan), Masaharu Shiratani (Kyushu Univ., Japan) |
| Page | pp. 143 - 144 |
| Title | (Invited Paper) Depth Directional Profiles of Electronic Structure in Chalcogenide Absorber-Based Solar Cells |
| Author | *Norio Terada (Kagoshima Univ., Japan) |
| Page | pp. 145 - 148 |
| Title | Sn-driven Self-formation of Ge1−xSnx Nanodots on Insulator for Multi-layered Quantum Dots Structure |
| Author | *Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Masashi Kurosawa, Osamu Nakatsuka (Nagoya Univ., Japan) |
| Page | pp. 149 - 150 |
| Title | Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111) |
| Author | *Keigo Matsushita, Akio Ohta, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 151 - 152 |
| Title | Spectroscopic Study of Quantum-confinement in Ultrathin-body GeOI |
| Author | *Yuhsuke Yasutake, Takumi Kohei (Univ. of Tokyo, Japan), Wen Hsin Chang, Hiroto Ishii, Toshifumi Irisawa, Tatsuro Maeda (AIST, Japan), Susumu Fukatsu (Univ. of Tokyo, Japan) |
| Page | pp. 153 - 154 |
| Title | Molecular Beam Epitaxy of CaGe2 Layers on Si(111) Substrate |
| Author | *Kazuya Okada, Shigehisa Shibayama, Osamu Nakatsuka, Masashi Kurosawa (Nagoya Univ., Japan) |
| Page | pp. 155 - 156 |
| Title | Spin Wave Characteristics of Spin Frustrated System of Co and Si-substituted Y3Fe5O12Thin Films |
| Author | *Kenyu Terao, Md Shamim Sarker, Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata (Univ. of Tokyo, Japan) |
| Page | pp. 157 - 158 |
| Title | Interface Property of Floating-Gate Memory Structure with LaBxNy Insulator and N-doped LaB6 Metal Layer Formed on Si(100) by Quasi-Static C-V Measurement |
| Author | *Eun-Ki Hong, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan) |
| Page | pp. 159 - 160 |
| Title | Effect of Off-angle on the Epitaxial Growth of MoS2 on Off-angle Sapphire by Metal-organic Chemical Vapor Deposition |
| Author | *Myeongok Kim, Nazmul Ahsan (Univ. of Tokyo, Japan), Chen Chen (Pennsylvania State Univ., USA), Dorota A. Kowalczyk (Univ. of Lodz, Poland), Nicholas Trainor, Joan M. Redwing (Pennsylvania State Univ., USA), Yoshitaka Okada (Univ. of Tokyo, Japan) |
| Page | pp. 161 - 162 |
| Title | Effects of Modification of Film Interface by Nanoparticles on Mechanical Properties of Films |
| Author | *Shinjiro Ono, Sung Hwa Hwang, Takamasa Okumura (Kyushu Univ., Japan), Kazunori Koga (Kyushu Univ./National Institutes of Natural Sciences, Japan), Kunihiro Kamataki, Naoto Yamashita, Naho Itagaki, Masaharu Shiratani (Kyushu Univ., Japan) |
| Page | pp. 163 - 164 |
| Thursday, September 8, 2022 |
| Title | (Session Invited Paper) Defect Recognition and Evaluation of SiC Wafers for Power Device Application |
| Author | *Shunta Harada (Nagoya Univ., Japan) |
| Page | pp. 165 - 166 |
| Title | (Session Invited Paper) Strain Engineering for Enhancement of Hole Mobility in Silicon |
| Author | *Keisuke Arimoto (Univ. of Yamanashi, Japan) |
| Page | pp. 167 - 168 |
| Title | (Session Invited Paper) Single Crystal Photocatalytic Oxides: Carrier Recombination and Solar-to-hydrogen Conversion |
| Author | *Masashi Kato (Nagoya Inst. of Tech., Japan) |
| Page | pp. 169 - 170 |
| Title | (Session Invited Paper) Polarity Control of Sputter-Deposited AlN with High-Temperature Face-to-Face Annealing |
| Author | *Kanako Shojiki (Mie Univ./Osaka Univ., Japan), Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ., Japan) |
| Page | pp. 171 - 172 |
| Title | (Session Invited Paper) Study of Quantum Confinement Effects in Si/SiO2 Superlattices for Solar Cell Applications |
| Author | *Shigeru Yamada (Gifu Univ., Japan) |
| Page | pp. 173 - 174 |
| Title | (Session Invited Paper) CVD Growth and Photonic Device Application of Ge Strip Structure on Si |
| Author | *Yasuhiko Ishikawa, Jose A. Piedra-Lorenzana, Takeshi Hizawa (Toyohashi Univ. of Tech., Japan), Junichi Fujikata (Tokushima Univ./PETRA, Japan) |
| Page | pp. 175 - 176 |