|
|
|
|
|
||||||||||||||||||||||||||||||||
| Wednesday, November 27, 2019 |
| Title | (Keynote Address) SiGeSn Semiconductors: Challenges and Perspectives |
| Author | *Dan Buca, N. von den Driesch, Mingshan Liu (Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Juelich, Germany), Moustafa El Kurdi (Univ. Paris-Sud, France), J.M. Hartmann (CEA, LETI and Univ. Grenoble Alpes, France), Z. Ikonic (Univ. of Leeds, UK), D. Grützmacher, Q.T. Zhao (Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Juelich, Germany) |
| Page | pp. 1 - 2 |
| Title | (Keynote Address) STT-MRAM and CMOS/MTJ Hybrid AI Processors for Low Power Edge System |
| Author | *Tetsuo Endoh (Tohoku Univ., Japan) |
| Page | pp. 3 - 4 |
| Title | (Invited Paper) Computational Materials Science for Nitride Semiconductor Epitaxial Growth |
| Author | *Tomonori Ito (Mie Univ., Japan) |
| Page | pp. 5 - 6 |
| Title | (Invited Paper) Practical Growth Processes of Silicide and Germanide Thin Films for Photovoltaic and Electronic Applications |
| Author | *Kosuke O. Hara, Shuhei Takizawa (Univ. of Yamanashi, Japan), Noritaka Usami (Nagoya Univ., Japan), Junji Yamanaka, Keisuke Arimoto (Univ. of Yamanashi, Japan) |
| Page | pp. 7 - 8 |
| Title | Defect Identification at the AlN/Si(111) Interface in AlGaN/GaN HEMT Structures by DLTS |
| Author | *Henriette Tetzner, Winfried Seifert (IHP - Leibniz-Institut für innovative Mikroelektronik, Germany), Sarad B. Thapa (Siltronic AG, Germany), Wolfgang M. Klesse, Marvin H. Zoellner (IHP - Leibniz-Institut für innovative Mikroelektronik, Germany) |
| Page | pp. 9 - 10 |
| Title | Germanium PN Junctions between Ferromagnetic CoFe and Fe3Si Layers for Spintronic Applications |
| Author | *Mizuki Honda, Takahiro Shiihara, Michihiro Yamada, Shinya Yamada, Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 11 - 12 |
| Title | Enhancement in Room-Temperature Magnetoresistance Ratio in p-Ge Based Vertical Spin-Valve Devices with a Co2FeSi Layer |
| Author | *Atsuya Yamada, Takahiro Shiihara, Michihiro Yamada, Mizuki Honda, Shinya Yamada, Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 13 - 14 |
| Title | Flexible Ferromagnetic Co2FeSi Films on Flexible Ge(111) |
| Author | *Shinya Yamada, Hidenori Higashi, Takeshi Kanashima, Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 15 - 16 |
| Title | Surface Morphology Evolution of Strained Si1-xGex Grown on Relaxed Ge(111) |
| Author | *Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi (Tokyo City Univ., Japan), Michihiro Yamada, Kohei Hamaya (Osaka Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan) |
| Page | pp. 17 - 18 |
| Title | Crystallinity and I-V Characteristics of p-CuCrO2/i-ZnO/n-ZnO |
| Author | *Masahiro Sasaki, Takeru Okada, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 23 - 24 |
| Title | Control of Blue to Green Light Absorption in V and N Co-Doped ZnO Thin Films |
| Author | *Kohtaroh Hoshino, Takeru Okada, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 25 - 26 |
| Title | Hole Mobility in Strained Si/Relaxed SiGe/Si(110) Hetero Structures Studied by Gated Hall Measurements |
| Author | *Daichi Namiuchi, Atsushi Onogawa, Keisuke Arimoto, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O Hara (Univ. of Yamanashi, Japan), Kentarou Sawano (Tokyo City Univ., Japan), Kiyokazu Nakagawa (Univ. of Yamanashi, Japan) |
| Page | pp. 27 - 28 |
| Title | Critical Thickness of SiGe on Si(110) Substrate |
| Author | *Shingo Saito, Yuichi Sano, Kosuke. O. Hara, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa (Univ. of Yamanashi, Japan) |
| Page | pp. 29 - 30 |
| Title | Mapping of Large Structural Defects in SiC Schottky Contacts Using Internal Photoemission Microscopy |
| Author | *Kenji Shiojima (Univ. of Fukui, Japan), Masashi Kato (Nagoya Inst. of Tech., Japan) |
| Page | pp. 31 - 32 |
| Title | Tuning Optical Properties of ZnO Thins Films Through Structural and Surface Modifications |
| Author | *Yudi Darma (Institut Teknologi Bandung, Indonesia) |
| Page | pp. 33 - 34 |
| Title | CuCrO2 Thin Film for Transparent Conductive Antibacterial Material |
| Author | *Kohtaroh Ohno, Tomoki Yokoyama, Takeru Okada, Makoto Kanzaki, Katsuyoshi Washio (Tohoku Univ., Japan) |
| Page | pp. 35 - 36 |
| Title | Thickness Dependences on Interfacial Properties of SiO2/BaO2 layers on 4H-SiC (0001) |
| Author | *Kosuke Muraoka (Hiroshima Univ., Japan), Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda (Phenitec Semiconductor, Japan), Shin-Ichiro Kuroki (Hiroshima Univ., Japan) |
| Page | pp. 37 - 38 |
| Title | Optical Interferences in Monolayer Tungsten Disulfide and Tungsten Diselenide Encapsulated by Hexagonal Boron Nitride |
| Author | *Yusuke Hoshi, Shunya Hayashida, Kentarou Sawano (Tokyo City Univ., Japan) |
| Page | pp. 39 - 40 |
| Title | Direct Growth of Unidirectional Graphene Nanoribbons on Vicinal Ge(001) |
| Author | Panlin Li, Tianbo Wang, Yuekun Yang, Yalan Wang, Miao Zhang, *Zhongying Xue, Zengfeng Di (Chinese Academy of Sciences, China) |
| Page | pp. 41 - 42 |
| Title | Impact of Growth Temperature of Ge Islands on Anti-Reflection Texture Formation |
| Author | *Van Hoang Nguyen, Yuki Kimura (Nagoya Univ., Japan), Alexey Novikov, Mikhail V Shaleev (Institute for Physics of Microstructures RAS, Russian Federation), Satoru Miyamoto, Yasuyoshi Kurokawa, Noritaka Usami (Nagoya Univ., Japan) |
| Page | pp. 43 - 44 |
| Title | Electronic Band Structure of MN/MgO (M = Sc, Ti)-2x2 and 3x3 superlattices |
| Author | *Kazuaki Kobayashi (NIMS, Japan), Hirokazu Takaki (Univ. of Tsukuba, Japan), Masato Shimono (NIMS, Japan), Nobuhiko Kobayashi (Univ. of Tsukuba, Japan), Kenji Hirose (NEC, Japan) |
| Page | pp. 45 - 46 |
| Title | Thermal Stability of Mechanically-Exfoliated Monolayer and Few Layer MoTe2 |
| Author | *Shunya Hayashida (Tokyo City Univ., Japan), Kenji Watanabe, Takashi Taniguchi (NIMS, Japan), Kentarou Sawano, Yusuke Hoshi (Tokyo City Univ., Japan) |
| Page | pp. 47 - 48 |
| Title | Formation of High Density Fe-silicide Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties |
| Author | *Jialin Wu, Hiroshi Furuhata (Nagoya Univ., Japan), Hai Zhang (Inner Mongolia Univ. of Tech., China), Yasushi Hashimoto, Mitsuhisa Ikeda, Akio Ohta (Nagoya Univ., Japan), Atsushi Kohno (Fukuoka Univ., Japan), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 49 - 50 |
| Title | High Density Formation and Magnetoelectronic Transport Properties of Magnetic Fe-silicide Nanodots |
| Author | *Hai Zhang, Xudong Liu (Inner Mongolia Univ. of Tech., China), Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 51 - 52 |
| Title | Aspect Ratio Dependence of Magnetization Switching in CoFe Nanolayers Patterned on GaAs (001) Substrates |
| Author | *Ryoma Horiguchi, Keigo Teramoto (Hokkaido Univ., Japan), Yusuke Adachi, Masashi Akabori (JAIST, Japan), Shinjiro Hara (Hokkaido Univ., Japan) |
| Page | pp. 53 - 54 |
| Title | Preparation of Si-TSVs Using Metal-Assisted Chemical Etching -Effect of Concentration of the Etching Solution- |
| Author | *Takuya Yorioka, Shunsuke Hanatani, Tomohiro Shimizu, Takeshi Ito, Shoso Shingubara (Kansai Univ., Japan) |
| Page | pp. 55 - 56 |
| Title | Fabrication of Silicon-on-Insulator with High Uniform Top Si for Silicon Photonics Applications |
| Author | *Nan Gao (Chinese Academy of Sciences, China), Meng Chen, Hongtao Xu (Shanghai Simgui Technology, China), Zhongying Xue, Xing Wei (Chinese Academy of Sciences, China) |
| Page | pp. 57 - 58 |
| Title | Strain Evaluation of Laser-annealed or RTA Sn-doped SiGe Layers |
| Author | *Shota Komago (Meiji Univ., Japan), Ryo Yokogawa (Meiji Univ. and JSPS Research Fellow DC, Japan), Kazutoshi Yoshioka, Naomi Sawamoto (Meiji Univ., Japan), John O. Borland (J.O.B. Technologies, USA), Takashi Kuroi (Nissin Ion Equipment, Japan), Yoji Kawasaki (Sumitomo Heavy Industries Ion Technology, Japan), Atsushi Ogura (Meiji Univ., Japan) |
| Page | pp. 59 - 60 |
| Thursday, November 28, 2019 |
| Title | (Invited Paper) GeSn CVD Epitaxy and Transistors |
| Author | *Chee Wee Liu, Chung-En Tsai, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye (National Taiwan Univ., Taiwan) |
| Page | pp. 61 - 62 |
| Title | (Invited Paper) Emerging Ferroelectric Memory Devices Enabled by Material Innovation |
| Author | *Masaharu Kobayashi (Univ. of Tokyo, Japan) |
| Page | pp. 63 - 64 |
| Title | Inverse Local Magnetoresistance Effect up to Room Temperature in Ferromagnet-Semiconductor Lateral Spin-Valve Devices |
| Author | *Takahiro Naito, Michihiro Yamada, Shinya Yamada (Osaka Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Kohei Hamaya (Osaka Univ., Japan) |
| Page | pp. 65 - 66 |
| Title | 5 nm Thick Ferroelectric Undoped HfO2 Formed on Si(100) with Pt Electrodes |
| Author | *Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan) |
| Page | pp. 67 - 68 |
| Title | Ferroelectric Thin Film of Lanthanum-Substituted Bismuth Titanate Formed Directly on Si Substrates for FeFET Memory |
| Author | *Atsushi Kohno, Takayuki Tajiri (Fukuoka Univ., Japan) |
| Page | pp. 69 - 70 |
| Title | (Invited Paper) Growth of Ge/SiGe Quantum Cascade Heterostructures |
| Author | M. Montanari, L. Persichetti, C. Ciano, L. Di Gaspare (Univ. Roma Tre, Italy), M. Virgilio (Univ. of Pisa, Italy), G. Capellini, M. Zoellner, O. Skibitzki (IHP-Leibniz-Institut für innovative Mikroelektronik, Germany), G. Scalari (ETH Zurich, Switzerland), D. J. Paul (Univ. of Glasgow, UK), T. Grange, S. Birner (nextnano GmbH, Garching b., Germany), O. Moutanabbir, S. Mukherjee (École Polytechnique de Montréal, Canada), L. Baldassarre, M. Ortolani (Univ. Sapienza, Rome, Italy), *M. De Seta (Univ. Roma Tre, Italy) |
| Page | pp. 71 - 72 |
| Title | (Invited Paper) SiGe: A Material Platform for Near and Mid-Infrared Photonics |
| Author | *Giovanni Isella, Andrea Barzaghi, Virginia Falcone, Andrea Ballabio, Jacopo Frigerio, Fabio Signorelli, Alberto Tosi (Politecnico di Milano, Italy), Saleh Firoozabadi, Andreas Beyer, Kerstin Volz (Materials Science Center and Faculty of Physics, Philipps-Univ. Marburg, Germany), Marco Salvalaglio, Axel Voigt (Tech. Univ. Dresden, Germany), Marco Albani, Roberto Bergamaschini, Francesco Montalenti (Univ. di Milano-Bicocca, Italy), Qiankun Liu, Joan Manel Ramirez, Miguel Montesinos-Ballester, Vladyslav Vakarin, Delphine Marris-Morini (Univ. Paris-Sud, CNRS, France) |
| Page | pp. 73 - 74 |
| Title | Characterization of Photoluminescence from Si-QDs with B δ-Doped Ge Core |
| Author | *Takuya Maehara, Shuntaro Fujimori, Mitsuhisa Ikeda, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 75 - 76 |
| Title | Shape of Tunnel Barrier at Ferromagnet/Semiconductor Interface as Key Factor for Large Enhancement of Spin Detection Efficiency |
| Author | *Emile Fourneau, Alejandro Silhanek, Ngoc Duy Nguyen (Univ. of Liège, Belgium) |
| Page | pp. 77 - 78 |
| Title | (Invited Paper) 3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography |
| Author | *Kazuo Tsutsui (Tokyo Inst. of Tech., Japan), Tomohiro Matsushita, Takayuki Muro (JASRI, Japan), Yoshitada Morikawa (Osaka Univ., Japan), Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Inst. of Tech., Japan), Kouichi Hayashi (Nagoya Inst. of Tech., Japan), Fumihiko Matsui (Institute of Molecular Science, Japan), Toyohiko Kinoshita (JASRI, Japan) |
| Page | pp. 79 - 80 |
| Title | (Invited Paper) Charge Pumping in Silicon MOSFETs －Towards Ultimate Control of Charges and Spins－ |
| Author | *Masahiro Hori, Toshiaki Tsuchiya, Yukinori Ono (Shizuoka Univ., Japan) |
| Page | pp. 81 - 82 |
| Title | Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy |
| Author | *Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan) |
| Page | pp. 83 - 84 |
| Title | Impedance Mapping of Cell Layer Cultured on Field-Effect Chemical Sensor |
| Author | *K. Miyamoto, D. Suzuki, C. F. Werner, T. Yoshinobu (Tohoku Univ., Japan) |
| Page | pp. 85 - 86 |
| Title | O2 Pressure Dependence of Changes of Band Bending of p-NiO Layer Grown on Ni (111) Surface Studied by Photoelectron Spectroscopy |
| Author | *Bingruo Zhang, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Yuji Takakuwa (Tohoku Univ., Japan) |
| Page | pp. 87 - 88 |
| Title | (Invited Paper) Group IV Heteroepitaxy Processes for Advanced Electronics Devices Integration into BiCMOS Technology |
| Author | *Yuji Yamamoto, Holger Rücker, Bernd Heinemann, Stefan Lischke, Canan Baristiran Kaynak, Mehmet Kaynak (IHP – Leibniz-Institut für Innovative Mikroelektronik, Germany), Bernd Tillack (Tech. Univ. Berlin, Germany) |
| Page | pp. 89 - 90 |
| Title | (Invited Paper) Modern Growth, Characterization and Applications of SiGe Volume Crystals and Thin Films |
| Author | *Thomas Schröder (Leibniz Institute for Crystal Growth, Germany) |
| Page | p. 91 |
| Title | Fabrication of +c/-c AlN Structure toward IR Wavelength Conversion |
| Author | *Yusuke Hayashi (Osaka Univ., Japan), Kenjiro Uesugi, Kanako Shojiki (Mie Univ., Japan), Ryuji Katayama, Akira Sakai (Osaka Univ., Japan), Hideto Miyake (Mie Univ., Japan) |
| Page | pp. 93 - 94 |
| Title | Device Dimension Effect of Subthreshold Swing for Ferroelectric Polycrystalline HfZrO2 FETs |
| Author | *K.-T. Chen, C.-Y. Liao, G.-Y. Siang, H.-Y. Chen, C. Lo, Y.-J. Yang, Y.-Y. Lin, Y.-J. Tseng, C. Chang, C.-Y. Chueh (National Taiwan Normal Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan), M. H. Lee (National Taiwan Normal Univ., Taiwan) |
| Page | pp. 95 - 96 |
| Title | Enhanced Photoluminescence from Strained Ge-on-Insulator Surface-Passivated with Hydrogenated Amorphous Si |
| Author | *Kenta Niikura, Yuta Kumazawa, Natsuki Yamahata, Yusuke Hoshi, Tsukasa Takamura (Tokyo City Univ., Japan), Kimihiko Saito (Fukushima Univ., Japan), Makoto Konagai, Kentarou Sawano (Tokyo City Univ., Japan) |
| Page | pp. 97 - 98 |
| Friday, November 29, 2019 |
| Title | (Invited Paper) Improved Channel Characteristics of 4H-SiC MOSFETs by Sulfur Doping Based on the Understanding of Carrier Transport in Inversion Layer |
| Author | *Munetaka Noguchi, Toshiaki Iwamatsu, Hiroyuki Amishiro, Hiroshi Watanabe (Mitsubishi Electric, Japan), Koji Kita (Univ. of Tokyo, Japan), Naruhisa Miura (Mitsubishi Electric, Japan) |
| Page | pp. 99 - 100 |
| Title | (Invited Paper) Consideration on Thermodynamics and Kinetics of SiC Thermal Oxidation in O2 and H2O |
| Author | *Koji Kita (Univ. of Tokyo, Japan) |
| Page | pp. 101 - 102 |
| Title | Influences of Coexisting O2 in H2O-Annealing Ambient on Thermal Oxidation and MOS Interface Properties on 4H-SiC (1-100) |
| Author | *Qiao Chu (Univ. of Tokyo, Japan), Masato Noborio, Sumera Shimizu (DENSO, Japan), Koji Kita (Univ. of Tokyo, Japan) |
| Page | pp. 103 - 104 |
| Title | Electrokinetics at the Interface between Graphene and Moving Water Droplet |
| Author | *Takeru Okada (Tohoku Univ., Japan), Golap Kalita, Masaki Tanemura (Nagoya Inst. of Tech., Japan), Ichiro Yamashita (Osaka Univ., Japan), Fumio S Ohuchi (Univ. of Washington, USA), M Meyyappan (NASA Ames Research Center, USA), Seiji Samukawa (Tohoku Univ., Japan) |
| Page | pp. 105 - 106 |
| Title | (Invited Paper) Formation of Through-Si via Using Metal-Assisted Chemical Etching Method |
| Author | *Tomohiro Shimizu, Shoso Shingubara (Kansai Univ., Japan) |
| Page | pp. 107 - 108 |
| Title | (Invited Paper) Coherent Spectroscopy of Multiple Excitons in Quantum Dot Nanocrystals |
| Author | *Hirokazu Tahara, Yoshihiko Kanemitsu (Kyoto Univ., Japan) |
| Page | pp. 109 - 110 |
| Title | Application of Surface Chemical Imaging by XANAM to Ge Surfaces |
| Author | *Shushi Suzuki (Nagoya Univ., Japan), Shingo Mukai (Hokkaido Univ., Japan), Wang Jae Chun (International Christian Univ., Japan), Masaharu Nomura (KEK, Japan), Syuntarou Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan), Kiyotaka Asakura (Hokkaido Univ., Japan) |
| Page | pp. 111 - 112 |
| Title | Tailoring Oxygen-related Point Defects of Sn-Doped In2O3 Polycrystalline Films by the State-of-the-art Technology of Electronegative-Oxygen-Ions Irradiation |
| Author | *Tetsuya Yamamoto, Yutaka Furubayashi (Kochi Univ. of Tech., Japan), Makoto Maehara (Sumitomo Heavy Indutries, Japan) |
| Page | pp. 113 - 114 |
| Title | (Invited Paper) GeSn-Based Nano-Electronic Devices and Photo Detector |
| Author | *Xiao Gong, Ying Wu, Shengqiang Xu, Dian Lei, Yee-Chia Yeo (National Univ. of Singapore, Singapore) |
| Page | pp. 115 - 116 |
| Title | (Invited Paper) High Efficiency Ge-on-Si Single Photon Avalanche Diode Detectors for the Short-Wave Infrared |
| Author | *Ross W. Millar, Jarosław Kirdoda, Derek C.S. Dumas (Univ. of Glasgow, UK), Peter Vines, Kateryna Kuzmenko, Zoë M. Greener (Heriot-Watt Univ., UK), Muhammad M. Mirza (Univ. of Glasgow, UK), Gerald S. Buller (Heriot-Watt Univ., UK), Douglas J. Paul (Univ. of Glasgow, UK) |
| Page | pp. 117 - 118 |
| Title | The Electronic Band Structure of the Sn/Ge(001) Interface Studied by Angle-Resolved Photoelectron Spectroscopy |
| Author | *Felix Reichmann, Emily V. S. Hofmann, Giovanni Capellini, Wolfgang M. Klesse (IHP – Leibniz-Institut für innovative Mikroelektronik, Germany) |
| Page | pp. 119 - 120 |
| Title | In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity |
| Author | *Masahiro Fukuda, Jihee Jeon, Mitsuo Sakashita, Shigehisa Shibayama, Masashi Kurosawa, Osamu Nakatsuka (Nagoya Univ., Japan) |
| Page | pp. 121 - 122 |
| Title | (Invited Paper) Formulation for In-Situ Co-Doping of B and C in CVD Si1-xGex Epitaxial Growth Based on the Langmuir-Type Mechanism |
| Author | *Junichi Murota (Tohoku Univ., Japan), Hiromu Ishii (Toyohashi Univ. of Tech., Japan) |
| Page | pp. 123 - 124 |
| Title | (Invited Paper) Bi-Layer Tunneling FET Using Group IV/Oxide Semiconductor Hetero-Structure |
| Author | *Shinichi Takagi (Univ. of Tokyo, Japan), Kimihiko Kato (AIST, Japan), Mitsuru Takenaka (Univ. of Tokyo, Japan) |
| Page | pp. 125 - 126 |
| Title | (Invited Paper) Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy |
| Author | *Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang (Kyushu Univ., Japan) |
| Page | pp. 127 - 128 |
| Title | (Invited Paper) Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices |
| Author | *Osamu Nakatsuka, Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita (Nagoya Univ., Japan), Shigeaki Zaima (Meijo Univ., Japan) |
| Page | pp. 129 - 130 |
| Title | (Invited Paper) Direct Observation of Ultra-rapid Solid Phase Crystallization of Amorphous Silicon Films Irradiated by Micro-Thermal Plasma Jet |
| Author | *Seiichiro Higashi, Hiroaki Hanafusa, Yuri Mizukawa, Hoa Thi Khanh Nguyen (Hiroshima Univ., Japan) |
| Page | pp. 131 - 132 |
| Title | (Invited Paper) Fabrication of Impurity Doped Si Quantum Dots with Ge Core for Light Emission Devices |
| Author | *Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 133 - 134 |