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8th International Symposium on Control of Semiconductor Interfaces
Author Index

Table of Contents:   A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  R  S  T  U  V  W  X  Y  Z  

A

Adachi, Yusuke (JAIST)   p. 53 (WP2-20)
Akabori, Masashi (JAIST)   p. 53 (WP2-20)
Alam, Md. Mahfuz (Tokyo City Univ.)   p. 17 (WP2-2)
Albani, Marco (Univ. di Milano-Bicocca)   p. 73 (TA2-2)
Amishiro, Hiroyuki (Mitsubishi Electric)   p. 99 (FA1-1)
Arimoto, Keisuke (Univ. of Yamanashi)   p. 7 (WP1-2)
Arimoto, Keisuke (Univ. of Yamanashi)   p. 27 (WP2-7)
Arimoto, Keisuke (Univ. of Yamanashi)   p. 29 (WP2-8)
Asakura, Kiyotaka (Hokkaido Univ.)   p. 111 (FA2-3)

B

Baldassarre, L. (Univ. Sapienza, Rome)   p. 71 (TA2-1)
Ballabio, Andrea (Politecnico di Milano)   p. 73 (TA2-2)
Baristiran Kaynak, Canan (IHP – Leibniz-Institut für Innovative Mikroelektronik)   p. 89 (TP2-1)
Barzaghi, Andrea (Politecnico di Milano)   p. 73 (TA2-2)
Bergamaschini, Roberto (Univ. di Milano-Bicocca)   p. 73 (TA2-2)
Beyer, Andreas (Materials Science Center and Faculty of Physics, Philipps-Univ. Marburg)   p. 73 (TA2-2)
Birner, S. (nextnano GmbH, Garching b.)   p. 71 (TA2-1)
Borland, John O. (J.O.B. Technologies)   p. 59 (WP2-23)
Buca, Dan (Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Juelich)   p. 1 (WA1-1)
Buller, Gerald S. (Heriot-Watt Univ.)   p. 117 (FP1-2)

C

Capellini, G. (IHP-Leibniz-Institut für innovative Mikroelektronik)   p. 71 (TA2-1)
Capellini, Giovanni (IHP – Leibniz-Institut für innovative Mikroelektronik)   p. 119 (FP1-3)
Chang, C. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Chang, S. T. (National Chung Hsing Univ.)   p. 95 (TP2-4)
Chen, H.-Y. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Chen, K.-T. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Chen, Meng (Shanghai Simgui Technology)   p. 57 (WP2-22)
Chu, Qiao (Univ. of Tokyo)   p. 103 (FA1-3)
Chueh, C.-Y. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Chun, Wang Jae (International Christian Univ.)   p. 111 (FA2-3)
Ciano, C. (Univ. Roma Tre)   p. 71 (TA2-1)

D

Darma, Yudi (Institut Teknologi Bandung)   p. 33 (WP2-10)
De Seta, M. (Univ. Roma Tre)   p. 71 (TA2-1)
Di Gaspare, L. (Univ. Roma Tre)   p. 71 (TA2-1)
Di, Zengfeng (Chinese Academy of Sciences)   p. 41 (WP2-14)
Driesch, N. von den (Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Juelich)   p. 1 (WA1-1)
Dumas, Derek C.S. (Univ. of Glasgow)   p. 117 (FP1-2)

E

Endoh, Tetsuo (Tohoku Univ.)   p. 3 (WA1-2)

F

Falcone, Virginia (Politecnico di Milano)   p. 73 (TA2-2)
Firoozabadi, Saleh (Materials Science Center and Faculty of Physics, Philipps-Univ. Marburg)   p. 73 (TA2-2)
Fourneau, Emile (Univ. of Liège)   p. 77 (TA2-4)
Frigerio, Jacopo (Politecnico di Milano)   p. 73 (TA2-2)
Fujimori, Shuntaro (Nagoya Univ.)   p. 75 (TA2-3)
Fujimori, Syuntarou (Nagoya Univ.)   p. 111 (FA2-3)
Fukuda, Masahiro (Nagoya Univ.)   p. 121 (FP1-4)
Furubayashi, Yutaka (Kochi Univ. of Tech.)   p. 113 (FA2-4)
Furuhata, Hiroshi (Nagoya Univ.)   p. 49 (WP2-18)

G

Gao, Nan (Chinese Academy of Sciences)   p. 57 (WP2-22)
Gong, Xiao (National Univ. of Singapore)   p. 115 (FP1-1)
Grange, T. (nextnano GmbH, Garching b.)   p. 71 (TA2-1)
Greener, Zoë M. (Heriot-Watt Univ.)   p. 117 (FP1-2)
Grützmacher, D. (Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Juelich)   p. 1 (WA1-1)

H

Hamaya, Kohei (Osaka Univ.)   p. 11 (WP1-4)
Hamaya, Kohei (Osaka Univ.)   p. 13 (WP1-5)
Hamaya, Kohei (Osaka Univ.)   p. 15 (WP2-1)
Hamaya, Kohei (Osaka Univ.)   p. 17 (WP2-2)
Hamaya, Kohei (Osaka Univ.)   p. 65 (TA1-3)
Hanafusa, Hiroaki (Hiroshima Univ.)   p. 131 (S2-2)
Hanatani, Shunsuke (Kansai Univ.)   p. 55 (WP2-21)
Hara, Kosuke O (Univ. of Yamanashi)   p. 27 (WP2-7)
Hara, Kosuke O. (Univ. of Yamanashi)   p. 7 (WP1-2)
Hara, Kosuke. O. (Univ. of Yamanashi)   p. 29 (WP2-8)
Hara, Shinjiro (Hokkaido Univ.)   p. 53 (WP2-20)
Hartmann, J.M. (CEA, LETI and Univ. Grenoble Alpes)   p. 1 (WA1-1)
Hashimoto, Yasushi (Nagoya Univ.)   p. 49 (WP2-18)
Hayashi, Kouichi (Nagoya Inst. of Tech.)   p. 79 (TP1-1)
Hayashi, Masaki (Tokyo Inst. of Tech.)   p. 67 (TA1-4)
Hayashi, Yusuke (Osaka Univ.)   p. 93 (TP2-3)
Hayashida, Shunya (Tokyo City Univ.)   p. 39 (WP2-13)
Hayashida, Shunya (Tokyo City Univ.)   p. 47 (WP2-17)
Heinemann, Bernd (IHP – Leibniz-Institut für Innovative Mikroelektronik)   p. 89 (TP2-1)
Higashi, Hidenori (Osaka Univ.)   p. 15 (WP2-1)
Higashi, Seiichiro (Hiroshima Univ.)   p. 131 (S2-2)
Hirose, Kenji (NEC)   p. 45 (WP2-16)
Hofmann, Emily V. S. (IHP – Leibniz-Institut für innovative Mikroelektronik)   p. 119 (FP1-3)
Honda, Mizuki (Osaka Univ.)   p. 11 (WP1-4)
Honda, Mizuki (Osaka Univ.)   p. 13 (WP1-5)
Hori, Masahiro (Shizuoka Univ.)   p. 81 (TP1-2)
Horiguchi, Ryoma (Hokkaido Univ.)   p. 53 (WP2-20)
Hoshi, Yusuke (Tokyo City Univ.)   p. 17 (WP2-2)
Hoshi, Yusuke (Tokyo City Univ.)   p. 39 (WP2-13)
Hoshi, Yusuke (Tokyo City Univ.)   p. 47 (WP2-17)
Hoshi, Yusuke (Tokyo City Univ.)   p. 97 (TP2-5)
Hoshii, Takuya (Tokyo Inst. of Tech.)   p. 79 (TP1-1)
Hoshino, Kohtaroh (Tohoku Univ.)   p. 25 (WP2-6)
Huang, Yu-Shiang (National Taiwan Univ.)   p. 61 (TA1-1)

I

Ikeda, Mitsuhisa (Nagoya Univ.)   p. 49 (WP2-18)
Ikeda, Mitsuhisa (Nagoya Univ.)   p. 51 (WP2-19)
Ikeda, Mitsuhisa (Nagoya Univ.)   p. 75 (TA2-3)
Ikeda, Mitsuhisa (Nagoya Univ.)   p. 111 (FA2-3)
Ikeda, Mitsuhisa (Nagoya Univ.)   p. 133 (S2-3)
Ikonic, Z. (Univ. of Leeds)   p. 1 (WA1-1)
Isella, Giovanni (Politecnico di Milano)   p. 73 (TA2-2)
Ishii, Hiromu (Toyohashi Univ. of Tech.)   p. 123 (S1-1)
Ishikawa, Seiji (Phenitec Semiconductor)   p. 37 (WP2-12)
Ito, Takeshi (Kansai Univ.)   p. 55 (WP2-21)
Ito, Tomonori (Mie Univ.)   p. 5 (WP1-1)
Iwamatsu, Toshiaki (Mitsubishi Electric)   p. 99 (FA1-1)
Izumi, Daisuke (Univ. of Yamanashi)   p. 27 (WP2-7)

J

Jeon, Jihee (Nagoya Univ.)   p. 121 (FP1-4)

K

Kakushima, Kuniyuki (Tokyo Inst. of Tech.)   p. 79 (TP1-1)
Kalita, Golap (Nagoya Inst. of Tech.)   p. 105 (FA1-4)
Kanashima, Takeshi (Osaka Univ.)   p. 15 (WP2-1)
Kanemitsu, Yoshihiko (Kyoto Univ.)   p. 109 (FA2-2)
Kanzaki, Makoto (Tohoku Univ.)   p. 35 (WP2-11)
Kataoka, Masakazu (Tokyo Inst. of Tech.)   p. 67 (TA1-4)
Katayama, Ryuji (Osaka Univ.)   p. 93 (TP2-3)
Kato, Kimihiko (AIST)   p. 125 (S1-2)
Kato, Masashi (Nagoya Inst. of Tech.)   p. 31 (WP2-9)
Kawasaki, Yoji (Sumitomo Heavy Industries Ion Technology)   p. 59 (WP2-23)
Kaynak, Mehmet (IHP – Leibniz-Institut für Innovative Mikroelektronik)   p. 89 (TP2-1)
Kim, Min Gee (Tokyo Inst. of Tech.)   p. 67 (TA1-4)
Kimura, Yuki (Nagoya Univ.)   p. 43 (WP2-15)
Kinoshita, Toyohiko (JASRI)   p. 79 (TP1-1)
Kirdoda, Jarosław (Univ. of Glasgow)   p. 117 (FP1-2)
Kita, Koji (Univ. of Tokyo)   p. 99 (FA1-1)
Kita, Koji (Univ. of Tokyo)   p. 101 (FA1-2)
Kita, Koji (Univ. of Tokyo)   p. 103 (FA1-3)
Klesse, Wolfgang M. (IHP - Leibniz-Institut für innovative Mikroelektronik)   p. 9 (WP1-3)
Klesse, Wolfgang M. (IHP – Leibniz-Institut für innovative Mikroelektronik)   p. 119 (FP1-3)
Kobayashi, Kazuaki (NIMS)   p. 45 (WP2-16)
Kobayashi, Masaharu (Univ. of Tokyo)   p. 63 (TA1-2)
Kobayashi, Nobuhiko (Univ. of Tsukuba)   p. 45 (WP2-16)
Kohno, Atsushi (Fukuoka Univ.)   p. 49 (WP2-18)
Kohno, Atsushi (Fukuoka Univ.)   p. 69 (TA1-5)
Komago, Shota (Meiji Univ.)   p. 59 (WP2-23)
Konagai, Makoto (Tokyo City Univ.)   p. 97 (TP2-5)
Kumazawa, Yuta (Tokyo City Univ.)   p. 97 (TP2-5)
Kurdi, Moustafa El (Univ. Paris-Sud)   p. 1 (WA1-1)
Kuroi, Takashi (Nissin Ion Equipment)   p. 59 (WP2-23)
Kurokawa, Yasuyoshi (Nagoya Univ.)   p. 43 (WP2-15)
Kuroki, Shin-Ichiro (Hiroshima Univ.)   p. 37 (WP2-12)
Kurosawa, Masashi (Nagoya Univ.)   p. 121 (FP1-4)
Kurosawa, Masashi (Nagoya Univ.)   p. 129 (S2-1)
Kuzmenko, Kateryna (Heriot-Watt Univ.)   p. 117 (FP1-2)

L

Lee, M. H. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Lei, Dian (National Univ. of Singapore)   p. 115 (FP1-1)
Li, Panlin (Chinese Academy of Sciences)   p. 41 (WP2-14)
Liao, C.-Y. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Lin, Y.-Y. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Lischke, Stefan (IHP – Leibniz-Institut für Innovative Mikroelektronik)   p. 89 (TP2-1)
Liu, Chee Wee (National Taiwan Univ.)   p. 61 (TA1-1)
Liu, Mingshan (Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Juelich)   p. 1 (WA1-1)
Liu, Qiankun (Univ. Paris-Sud, CNRS)   p. 73 (TA2-2)
Liu, Xudong (Inner Mongolia Univ. of Tech.)   p. 51 (WP2-19)
Lo, C. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Lu, Fang-Liang (National Taiwan Univ.)   p. 61 (TA1-1)

M

Maeda, Tomonori (Phenitec Semiconductor)   p. 37 (WP2-12)
Maehara, Makoto (Sumitomo Heavy Indutries)   p. 113 (FA2-4)
Maehara, Takuya (Nagoya Univ.)   p. 75 (TA2-3)
Mailig, Rengie Mark D. (Tokyo Inst. of Tech.)   p. 67 (TA1-4)
Makihara, Katsunori (Nagoya Univ.)   p. 49 (WP2-18)
Makihara, Katsunori (Nagoya Univ.)   p. 51 (WP2-19)
Makihara, Katsunori (Nagoya Univ.)   p. 75 (TA2-3)
Makihara, Katsunori (Nagoya Univ.)   p. 111 (FA2-3)
Makihara, Katsunori (Nagoya Univ.)   p. 133 (S2-3)
Manel Ramirez, Joan (Univ. Paris-Sud, CNRS)   p. 73 (TA2-2)
Marris-Morini, Delphine (Univ. Paris-Sud, CNRS)   p. 73 (TA2-2)
Matsui, Fumihiko (Institute of Molecular Science)   p. 79 (TP1-1)
Matsushita, Tomohiro (JASRI)   p. 79 (TP1-1)
Meyyappan, M (NASA Ames Research Center)   p. 105 (FA1-4)
Millar, Ross W. (Univ. of Glasgow)   p. 117 (FP1-2)
Mirza, Muhammad M. (Univ. of Glasgow)   p. 117 (FP1-2)
Miura, Naruhisa (Mitsubishi Electric)   p. 99 (FA1-1)
Miyake, Hideto (Mie Univ.)   p. 93 (TP2-3)
Miyamoto, K. (Tohoku Univ.)   p. 85 (TP1-4)
Miyamoto, Satoru (Nagoya Univ.)   p. 43 (WP2-15)
Miyazaki, Seiichi (Nagoya Univ.)   p. 49 (WP2-18)
Miyazaki, Seiichi (Nagoya Univ.)   p. 51 (WP2-19)
Miyazaki, Seiichi (Nagoya Univ.)   p. 75 (TA2-3)
Miyazaki, Seiichi (Nagoya Univ.)   p. 111 (FA2-3)
Miyazaki, Seiichi (Nagoya Univ.)   p. 133 (S2-3)
Mizukawa, Yuri (Hiroshima Univ.)   p. 131 (S2-2)
Montalenti, Francesco (Univ. di Milano-Bicocca)   p. 73 (TA2-2)
Montanari, M. (Univ. Roma Tre)   p. 71 (TA2-1)
Montesinos-Ballester, Miguel (Univ. Paris-Sud, CNRS)   p. 73 (TA2-2)
Morikawa, Yoshitada (Osaka Univ.)   p. 79 (TP1-1)
Moutanabbir, O. (École Polytechnique de Montréal)   p. 71 (TA2-1)
Mukai, Shingo (Hokkaido Univ.)   p. 111 (FA2-3)
Mukherjee, S. (École Polytechnique de Montréal)   p. 71 (TA2-1)
Muraoka, Kosuke (Hiroshima Univ.)   p. 37 (WP2-12)
Muro, Takayuki (JASRI)   p. 79 (TP1-1)
Murota, Junichi (Tohoku Univ.)   p. 123 (S1-1)

N

Naito, Takahiro (Osaka Univ.)   p. 65 (TA1-3)
Nakagawa, Kiyokazu (Univ. of Yamanashi)   p. 27 (WP2-7)
Nakagawa, Kiyokazu (Univ. of Yamanashi)   p. 29 (WP2-8)
Nakashima, Hiroshi (Kyushu Univ.)   p. 83 (TP1-3)
Nakashima, Hiroshi (Kyushu Univ.)   p. 127 (S1-3)
Nakatsuka, Osamu (Nagoya Univ.)   p. 121 (FP1-4)
Nakatsuka, Osamu (Nagoya Univ.)   p. 129 (S2-1)
Namiuchi, Daichi (Univ. of Yamanashi)   p. 27 (WP2-7)
Natori, Kotaro (Tokyo Inst. of Tech.)   p. 79 (TP1-1)
Nguyen, Hoa Thi Khanh (Hiroshima Univ.)   p. 131 (S2-2)
Nguyen, Ngoc Duy (Univ. of Liège)   p. 77 (TA2-4)
Nguyen, Van Hoang (Nagoya Univ.)   p. 43 (WP2-15)
Niikura, Kenta (Tokyo City Univ.)   p. 97 (TP2-5)
Noborio, Masato (DENSO)   p. 103 (FA1-3)
Noguchi, Munetaka (Mitsubishi Electric)   p. 99 (FA1-1)
Nomura, Masaharu (KEK)   p. 111 (FA2-3)
Novikov, Alexey (Institute for Physics of Microstructures RAS)   p. 43 (WP2-15)

O

Ogawa, Shuichi (Tohoku Univ.)   p. 87 (TP1-5)
Ogura, Atsushi (Meiji Univ.)   p. 59 (WP2-23)
Ohmi, Shun-ichiro (Tokyo Inst. of Tech.)   p. 67 (TA1-4)
Ohno, Kohtaroh (Tohoku Univ.)   p. 35 (WP2-11)
Ohta, Akio (Nagoya Univ.)   p. 49 (WP2-18)
Ohta, Akio (Nagoya Univ.)   p. 51 (WP2-19)
Ohta, Akio (Nagoya Univ.)   p. 75 (TA2-3)
Ohuchi, Fumio S (Univ. of Washington)   p. 105 (FA1-4)
Okada, Kazuya (Tokyo City Univ.)   p. 17 (WP2-2)
Okada, Takeru (Tohoku Univ.)   p. 23 (WP2-5)
Okada, Takeru (Tohoku Univ.)   p. 25 (WP2-6)
Okada, Takeru (Tohoku Univ.)   p. 35 (WP2-11)
Okada, Takeru (Tohoku Univ.)   p. 105 (FA1-4)
Ono, Yukinori (Shizuoka Univ.)   p. 81 (TP1-2)
Onogawa, Atsushi (Univ. of Yamanashi)   p. 27 (WP2-7)
Ortolani, M. (Univ. Sapienza, Rome)   p. 71 (TA2-1)

P

Paul, D. J. (Univ. of Glasgow)   p. 71 (TA2-1)
Paul, Douglas J. (Univ. of Glasgow)   p. 117 (FP1-2)
Persichetti, L. (Univ. Roma Tre)   p. 71 (TA2-1)

R

Reichmann, Felix (IHP – Leibniz-Institut für innovative Mikroelektronik)   p. 119 (FP1-3)
Rücker, Holger (IHP – Leibniz-Institut für Innovative Mikroelektronik)   p. 89 (TP2-1)

S

Saito, Kimihiko (Fukushima Univ.)   p. 97 (TP2-5)
Saito, Shingo (Univ. of Yamanashi)   p. 29 (WP2-8)
Sakai, Akira (Osaka Univ.)   p. 93 (TP2-3)
Sakashita, Mitsuo (Nagoya Univ.)   p. 121 (FP1-4)
Sakashita, Mitsuo (Nagoya Univ.)   p. 129 (S2-1)
Salvalaglio, Marco (Tech. Univ. Dresden)   p. 73 (TA2-2)
Samukawa, Seiji (Tohoku Univ.)   p. 105 (FA1-4)
Sano, Yuichi (Univ. of Yamanashi)   p. 27 (WP2-7)
Sano, Yuichi (Univ. of Yamanashi)   p. 29 (WP2-8)
Sasaki, Masahiro (Tohoku Univ.)   p. 23 (WP2-5)
Sawamoto, Naomi (Meiji Univ.)   p. 59 (WP2-23)
Sawano, Kentarou (Tokyo City Univ.)   p. 17 (WP2-2)
Sawano, Kentarou (Tokyo City Univ.)   p. 27 (WP2-7)
Sawano, Kentarou (Tokyo City Univ.)   p. 39 (WP2-13)
Sawano, Kentarou (Tokyo City Univ.)   p. 47 (WP2-17)
Sawano, Kentarou (Tokyo City Univ.)   p. 65 (TA1-3)
Sawano, Kentarou (Tokyo City Univ.)   p. 97 (TP2-5)
Scalari, G. (ETH Zurich)   p. 71 (TA2-1)
Schröder, Thomas (Leibniz Institute for Crystal Growth)   p. 91 (TP2-2)
Seifert, Winfried (IHP - Leibniz-Institut für innovative Mikroelektronik)   p. 9 (WP1-3)
Sezaki, Hiroshi (Phenitec Semiconductor)   p. 37 (WP2-12)
Shaleev, Mikhail V (Institute for Physics of Microstructures RAS)   p. 43 (WP2-15)
Shibayama, Shigehisa (Nagoya Univ.)   p. 121 (FP1-4)
Shibayama, Shigehisa (Nagoya Univ.)   p. 129 (S2-1)
Shiihara, Takahiro (Osaka Univ.)   p. 11 (WP1-4)
Shiihara, Takahiro (Osaka Univ.)   p. 13 (WP1-5)
Shimizu, Sumera (DENSO)   p. 103 (FA1-3)
Shimizu, Tomohiro (Kansai Univ.)   p. 55 (WP2-21)
Shimizu, Tomohiro (Kansai Univ.)   p. 107 (FA2-1)
Shimono, Masato (NIMS)   p. 45 (WP2-16)
Shingubara, Shoso (Kansai Univ.)   p. 55 (WP2-21)
Shingubara, Shoso (Kansai Univ.)   p. 107 (FA2-1)
Shiojima, Kenji (Univ. of Fukui)   p. 31 (WP2-9)
Shojiki, Kanako (Mie Univ.)   p. 93 (TP2-3)
Siang, G.-Y. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Signorelli, Fabio (Politecnico di Milano)   p. 73 (TA2-2)
Silhanek, Alejandro (Univ. of Liège)   p. 77 (TA2-4)
Skibitzki, O. (IHP-Leibniz-Institut für innovative Mikroelektronik)   p. 71 (TA2-1)
Suzuki, D. (Tohoku Univ.)   p. 85 (TP1-4)
Suzuki, Shushi (Nagoya Univ.)   p. 111 (FA2-3)

T

Tahara, Hirokazu (Kyoto Univ.)   p. 109 (FA2-2)
Tajiri, Takayuki (Fukuoka Univ.)   p. 69 (TA1-5)
Takagi, Shinichi (Univ. of Tokyo)   p. 125 (S1-2)
Takaki, Hirokazu (Univ. of Tsukuba)   p. 45 (WP2-16)
Takakuwa, Yuji (Tohoku Univ.)   p. 87 (TP1-5)
Takamura, Tsukasa (Tokyo City Univ.)   p. 97 (TP2-5)
Takenaka, Mitsuru (Univ. of Tokyo)   p. 125 (S1-2)
Takizawa, Shuhei (Univ. of Yamanashi)   p. 7 (WP1-2)
Tanemura, Masaki (Nagoya Inst. of Tech.)   p. 105 (FA1-4)
Taniguchi, Takashi (NIMS)   p. 47 (WP2-17)
Teramoto, Keigo (Hokkaido Univ.)   p. 53 (WP2-20)
Tetzner, Henriette (IHP - Leibniz-Institut für innovative Mikroelektronik)   p. 9 (WP1-3)
Thapa, Sarad B. (Siltronic AG)   p. 9 (WP1-3)
Tillack, Bernd (Tech. Univ. Berlin)   p. 89 (TP2-1)
Tosi, Alberto (Politecnico di Milano)   p. 73 (TA2-2)
Tsai, Chung-En (National Taiwan Univ.)   p. 61 (TA1-1)
Tseng, Y.-J. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Tsuchiya, Toshiaki (Shizuoka Univ.)   p. 81 (TP1-2)
Tsutsui, Kazuo (Tokyo Inst. of Tech.)   p. 79 (TP1-1)

U

Uesugi, Kenjiro (Mie Univ.)   p. 93 (TP2-3)
Usami, Noritaka (Nagoya Univ.)   p. 7 (WP1-2)
Usami, Noritaka (Nagoya Univ.)   p. 43 (WP2-15)

V

Vakarin, Vladyslav (Univ. Paris-Sud, CNRS)   p. 73 (TA2-2)
Vines, Peter (Heriot-Watt Univ.)   p. 117 (FP1-2)
Virgilio, M. (Univ. of Pisa)   p. 71 (TA2-1)
Voigt, Axel (Tech. Univ. Dresden)   p. 73 (TA2-2)
Volz, Kerstin (Materials Science Center and Faculty of Physics, Philipps-Univ. Marburg)   p. 73 (TA2-2)

W

Wagatsuma, Youya (Tokyo City Univ.)   p. 17 (WP2-2)
Wakabayashi, Hitoshi (Tokyo Inst. of Tech.)   p. 79 (TP1-1)
Wang, Dong (Kyushu Univ.)   p. 83 (TP1-3)
Wang, Dong (Kyushu Univ.)   p. 127 (S1-3)
Wang, Tianbo (Chinese Academy of Sciences)   p. 41 (WP2-14)
Wang, Yalan (Chinese Academy of Sciences)   p. 41 (WP2-14)
Washio, Katsuyoshi (Tohoku Univ.)   p. 23 (WP2-5)
Washio, Katsuyoshi (Tohoku Univ.)   p. 25 (WP2-6)
Washio, Katsuyoshi (Tohoku Univ.)   p. 35 (WP2-11)
Watanabe, Hiroshi (Mitsubishi Electric)   p. 99 (FA1-1)
Watanabe, Kenji (NIMS)   p. 47 (WP2-17)
Wei, Xing (Chinese Academy of Sciences)   p. 57 (WP2-22)
Wen, Wei-Chen (Kyushu Univ.)   p. 83 (TP1-3)
Wen, Wei-Chen (Kyushu Univ.)   p. 127 (S1-3)
Werner, C. F. (Tohoku Univ.)   p. 85 (TP1-4)
Wu, Jialin (Nagoya Univ.)   p. 49 (WP2-18)
Wu, Ying (National Univ. of Singapore)   p. 115 (FP1-1)

X

Xu, Hongtao (Shanghai Simgui Technology)   p. 57 (WP2-22)
Xu, Shengqiang (National Univ. of Singapore)   p. 115 (FP1-1)
Xue, Zhongying (Chinese Academy of Sciences)   p. 41 (WP2-14)
Xue, Zhongying (Chinese Academy of Sciences)   p. 57 (WP2-22)

Y

Yamada, Atsuya (Osaka Univ.)   p. 13 (WP1-5)
Yamada, Michihiro (Osaka Univ.)   p. 11 (WP1-4)
Yamada, Michihiro (Osaka Univ.)   p. 13 (WP1-5)
Yamada, Michihiro (Osaka Univ.)   p. 17 (WP2-2)
Yamada, Michihiro (Osaka Univ.)   p. 65 (TA1-3)
Yamada, Shinya (Osaka Univ.)   p. 11 (WP1-4)
Yamada, Shinya (Osaka Univ.)   p. 13 (WP1-5)
Yamada, Shinya (Osaka Univ.)   p. 15 (WP2-1)
Yamada, Shinya (Osaka Univ.)   p. 65 (TA1-3)
Yamahata, Natsuki (Tokyo City Univ.)   p. 97 (TP2-5)
Yamamoto, Keisuke (Kyushu Univ.)   p. 83 (TP1-3)
Yamamoto, Keisuke (Kyushu Univ.)   p. 127 (S1-3)
Yamamoto, Tetsuya (Kochi Univ. of Tech.)   p. 113 (FA2-4)
Yamamoto, Yuji (IHP – Leibniz-Institut für Innovative Mikroelektronik)   p. 89 (TP2-1)
Yamanaka, Junji (Univ. of Yamanashi)   p. 7 (WP1-2)
Yamanaka, Junji (Univ. of Yamanashi)   p. 27 (WP2-7)
Yamanaka, Junji (Univ. of Yamanashi)   p. 29 (WP2-8)
Yamashita, Ichiro (Osaka Univ.)   p. 105 (FA1-4)
Yang, Y.-J. (National Taiwan Normal Univ.)   p. 95 (TP2-4)
Yang, Yuekun (Chinese Academy of Sciences)   p. 41 (WP2-14)
Ye, Hung-Yu (National Taiwan Univ.)   p. 61 (TA1-1)
Yeo, Yee-Chia (National Univ. of Singapore)   p. 115 (FP1-1)
Yokogawa, Ryo (Meiji Univ. and JSPS Research Fellow DC)   p. 59 (WP2-23)
Yokoyama, Tomoki (Tohoku Univ.)   p. 35 (WP2-11)
Yorioka, Takuya (Kansai Univ.)   p. 55 (WP2-21)
Yoshigoe, Akitaka (Japan Atomic Energy Agency)   p. 87 (TP1-5)
Yoshinobu, T. (Tohoku Univ.)   p. 85 (TP1-4)
Yoshioka, Kazutoshi (Meiji Univ.)   p. 59 (WP2-23)

Z

Zaima, Shigeaki (Meijo Univ.)   p. 129 (S2-1)
Zhang, Bingruo (Tohoku Univ.)   p. 87 (TP1-5)
Zhang, Hai (Inner Mongolia Univ. of Tech.)   p. 49 (WP2-18)
Zhang, Hai (Inner Mongolia Univ. of Tech.)   p. 51 (WP2-19)
Zhang, Miao (Chinese Academy of Sciences)   p. 41 (WP2-14)
Zhao, Q.T. (Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Juelich)   p. 1 (WA1-1)
Zoellner, M. (IHP-Leibniz-Institut für innovative Mikroelektronik)   p. 71 (TA2-1)
Zoellner, Marvin H. (IHP - Leibniz-Institut für innovative Mikroelektronik)   p. 9 (WP1-3)