Fifth International Symposium on Control of Semiconductor Interfaces
Technical Program

Technical Program: One Page (Not Separated) version

Author Index: HERE

Session Schedule

Monday, November 12, 2007


C1 (RoomA) Opening Address 9:50 - 10:00
K (RoomA) Keynote Speech 10:00 - 11:20
Coffee Break 11:20 - 11:35
I1 (RoomA) Invited Session: Device 11:35 - 13:15
Lunch 13:15 - 14:40
I2 (RoomA) Invited Session: Source/Drain and Base Engineering 14:40 - 15:55
Coffee Break 15:55 - 16:10
I3 (RoomA) Invited Session: Substrate Engineering 16:10 - 17:25
Banquet (Restaurant) 18:00 - 20:00

Tuesday, November 13, 2007


I4 (RoomA) Invited Session: Control of Surface, Interface, and Heterostructure 9:00 - 10:40
Coffee Break 10:40 - 10:55
I5 (RoomA) Invited Session: Optical Properties of SiGe Thin Films and Dots 10:55 - 12:35
Lunch 12:35 - 14:00
OA1 (RoomA) Growth and Process Technologies 14:00 - 15:30	OB1 (RoomB) Diamond Devices and Device-Oriented Characterizaion 14:00 - 15:30
Coffee Break 15:30 - 15:45
OA2 (RoomA) Surface and Interface Control for Gate Stacks 15:45 - 17:15	OB2 (RoomB) Nanostructures 15:45 - 17:15
Intermission 17:15 - 17:30
P (RoomC) Poster Session 17:30 - 19:30

Wednesday, November 14, 2007


OA3 (RoomA) High-k Gate Stacks 9:00 - 10:45	OB3 (RoomB) Si/Ge-based Transistors 9:00 - 10:45
Coffee Break 10:45 - 11:10
I6 (RoomA) Invited Session: Diamond and C-Related Film Formation and Its Applications 11:10 - 12:25
Lunch 12:25 - 14:00
I7 (RoomA) Invited Session: High-k Materials on Semiconductors 14:00 - 15:15
C2 (RoomA) Closing 15:15 - 15:30

List of Papers

Monday, November 12, 2007

Session C1 Opening Address
Time: 9:50 - 10:00 Monday, November 12, 2007
Location: RoomA
Chairs: J. Murota (Tohoku Univ., Japan), S. Zaima (Nagoya Univ., Japan)

Session K Keynote Speech
Time: 10:00 - 11:20 Monday, November 12, 2007
Location: RoomA
Chairs: J. Murota (Tohoku Univ., Japan), S. Zaima (Nagoya Univ., Japan)

K-1 (Time: 10:00 - 10:40)

Title	(Keynote Address) Prospects for Future ULSI Technology
Author	Masataka Hirose (National Institure of Advanced Industrial Science and Technology, Japan)
Page	pp. 1 - 2

K-2 (Time: 10:40 - 11:20)

Title	(Keynote Address) Current Topics of SiGe Heterodevices
Author	E. Kasper (Univ. Stuttgart, Germany)
Page	pp. 3 - 4

Session I1 Invited Session: Device
Time: 11:35 - 13:15 Monday, November 12, 2007
Location: RoomA
Chairs: Y. Mochizuki (NEC, Japan), K. Washio (Hitachi, Japan)

I1-1 (Time: 11:35 - 12:00)

Title	(Invited Paper) Ballistic Transport in Nanoscale Transistor
Author	Kenji Natori (Univ. of Tsukuba, Japan)
Page	pp. 5 - 6

I1-2 (Time: 12:00 - 12:25)

Title	(Invited Paper) A New Strain-Transfer Concept to Exploit Lattice Interactions at Semiconductor Interfaces for Strain Engineering in Transistors
Author	Yee-Chia Yeo (National Univ. of Singapore, Singapore)
Page	pp. 7 - 8

I1-3 (Time: 12:25 - 12:50)

Title	(Invited Paper) Charge Transport in Boron-Doped Nano MOSFETs: Towards Single-Dopant Electronics
Author	Yukinori Ono, Mohammed Khalafalla, Katsuhiko Nishiguchi, Kei Takashina, Akira Fujiwara (NTT, Japan), Seiji Horiguchi (Akita Univ., Japan), Hiroshi Inokawa (Shizuoka Univ., Japan), Yasuo Takahashi (Hokkaido Univ., Japan)
Page	pp. 9 - 10

I1-4 (Time: 12:50 - 13:15)

Title	(Invited Paper) Si Single-Electron Devices: Interaction with Individual Dopants and Photons
Author	Michiharu Tabe, Ratno Nuryadi, Daniel Moraru, Zainal Arif Burhanudin, Hiroya Ikeda (Shizuoka Univ., Japan)
Page	pp. 11 - 12

Session I2 Invited Session: Source/Drain and Base Engineering
Time: 14:40 - 15:55 Monday, November 12, 2007
Location: RoomA
Chairs: M. Caymax (IMEC, Belgium), N. Sugii (Hitachi, Japan)

I2-1 (Time: 14:40 - 15:05)

Title	(Invited Paper) Base Doping and Dopant Profile Control of SiGe NPN and PNP HBTs
Author	Bernd Tillack, Bernd Heinemann, Dieter Knoll, Holger Rucker, Yuji Yamamoto (IHP, Germany)
Page	pp. 13 - 14

I2-2 (Time: 15:05 - 15:30)

Title	(Invited Paper) Interface Control in Dopant-Segregated Schottky Source/Drain Technology for Future CMOS
Author	Junji Koga, Atsuhiro Kinoshita, Takashi Yamauchi (Toshiba Corp., Japan)
Page	pp. 15 - 16

I2-3 (Time: 15:30 - 15:55)

Title	(Invited Paper) 45nm CMOS Technology by SiGe Low Temperature Selective Epitaxial Technique
Author	Naoyoshi Tamura, Yousuke Shimamune (Fujitsu Laboratories Ltd., Japan)
Page	pp. 17 - 18

Session I3 Invited Session: Substrate Engineering
Time: 16:10 - 17:25 Monday, November 12, 2007
Location: RoomA
Chairs: A. Sakai (Osaka Univ., Japan), N. Sugiyama (MIRAI-ASET, Japan)

I3-1 (Time: 16:10 - 16:35)

Title	(Invited Paper) Progress in III-V Material Integration with Si Substrates and Si Processing for III-V FET and Optoelectronic Integration
Author	E.A. Fitzgerald, L. Yang, C. Dohrman, K. Chilukuri, S. Gupta, C. Cheng (MIT, United States)
Page	pp. 19 - 20

I3-2 (Time: 16:35 - 17:00)

Title	(Invited Paper) Reduced Self-Heating by Strained Silicon Substrate Engineering
Author	Anthony O'Neill (Newcastle Univ., Great Britain)
Page	pp. 21 - 22

I3-3 (Time: 17:00 - 17:25)

Title	(Invited Paper) On True Silicon-on-nothing MOSFETs: Fabrication by Si Layer Transfer over the Pre-defined Cavity and Electrical Characterization
Author	Valeriya Kilchytska (Université catholique de Louvain, Microelectronics Lab., Belgium), Tsung Ming Chung, Benoit Olbrechts (Université catholique de Louvain, Microwave Lab., Belgium), Yaroslav Vovk (Institute of Semiconductor Physics, Ukraine), Denis Flandre (Université catholique de Louvain, Microelectronics Lab., Belgium), Jean-Pierre Raskin (Université catholique de Louvain, Microwave Lab., Belgium)
Page	pp. 23 - 24

Tuesday, November 13, 2007

Session I4 Invited Session: Control of Surface, Interface, and Heterostructure
Time: 9:00 - 10:40 Tuesday, November 13, 2007
Location: RoomA
Chairs: B. Tillack (IHP, Germany), A. O'Neill (Newcastle Univ., Great Britain)

I4-1 (Time: 9:00 - 9:25)

Title	(Invited Paper) Interface Control of High k Gate Dielectrics and Ge
Author	Matty Caymax, Michel Houssa, Geoffrey Pourtois, Florence Bellenger, Koen Martens, Annelies Delabie, Sven Van Elshocht (IMEC, Belgium)
Page	pp. 25 - 26

I4-2 (Time: 9:25 - 9:50)

Title	(Invited Paper) Low Temperature SiGe Films Formation with NFH Radical Precleaning
Author	Michio Ishikawa, Eiichi Mizuno (Institute for Semiconductor Technologies, ULVAC, Inc., Japan), Seiichi Takahashi, Akira Jinzu (Semiconductor Division2, ULVAC, Inc., Japan)
Page	pp. 27 - 28

I4-3 (Time: 9:50 - 10:15)

Title	(Invited Paper) Si(Ge):Mn Based Materials for Spintronic Applications
Author	V. Le Thanh, L. Michez, S. Olive-Mendez, A. Barski, J. Derrien (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille, France)
Page	pp. 29 - 30

I4-4 (Time: 10:15 - 10:40)

Title	(Invited Paper) Defect Control for Ge/Si and Ge_1-xSn_x/Ge/Si Heterostructures
Author	Akira Sakai (Osaka Univ., Japan), Shotaro Takeuchi, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 31 - 32

Session I5 Invited Session: Optical Properties of SiGe Thin Films and Dots
Time: 10:55 - 12:35 Tuesday, November 13, 2007
Location: RoomA
Chairs: S. Chiussi (Universidade de Vigo, Spain), V. Le Thanh (Univ. of Aix-Marseille, France)

I5-1 (Time: 10:55 - 11:20)

Title	(Invited Paper) Optical and Electrical Evaluations of Defects in SiGe Thin Layer
Author	Hiroshi Nakashima, Dong Wang (Kyushu Univ., Japan)
Page	pp. 33 - 34

I5-2 (Time: 11:20 - 11:45)

Title	(Invited Paper) Si Nano-photodiode with a Surface-Plasmon Antenna
Author	Junichi Fujikata, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi (NEC Corp., Japan)
Page	pp. 35 - 36

I5-3 (Time: 11:45 - 12:10)

Title	(Invited Paper) Luminescence of β-FeSi₂ and Application to Photonics
Author	Yoshihito Maeda (Kyoto Univ., Japan)
Page	pp. 37 - 38

I5-4 (Time: 12:10 - 12:35)

Title	(Invited Paper) MBE Growth of SiGe with High Ge Content for Optical Applications
Author	Michael Oehme, Jens Werner, Olaf Kirfel, Erich Kasper (Univ. Stuttgart, Germany)
Page	pp. 39 - 40

Session OA1 Growth and Process Technologies
Time: 14:00 - 15:30 Tuesday, November 13, 2007
Location: RoomA
Chairs: R. Loo (IMEC, Belgium), H. Nakashima (Kyushu Univ., Japan)

OA1-1 (Time: 14:00 - 14:15)

Title	Characterization of Local Strains in Si_1-xGe_x Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction
Author	Osamu Nakatsuka, Katsunori Yukawa, Shogo Mochizuki (Nagoya Univ., Japan), Akira Sakai (Osaka Univ., Japan), Kazunori Fukuda, Shigeru Kimura, Osami Sakata (Japan Synchrotron Radiation Research Institute, Japan), Koji Izunome, Takeshi Senda, Eiji Toyoda (Covalent Materials Corp., Japan), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 41 - 42

OA1-2 (Time: 14:15 - 14:30)

Title	Strain Reduction in Heavily Arsenic Doped SiGe
Author	Gaël Borot, Laurent Rubaldo (STMicroelectronics, France), Xavier Mescot, Martine Gri, Gérard Ghibaudo (IMEP, INPG, France), Didier Dutartre (STMicroelectronics, France)
Page	pp. 43 - 44

OA1-3 (Time: 14:30 - 14:45)

Title	Carrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition
Author	Cheng-Han Lee, C. -Y. Yu, C. M. Lin (National Taiwan Univ., Taiwan), H. Lin, W. -H. Chang (National Chiao Tung Univ., Taiwan), C. W. Liu (National Taiwan Univ., Taiwan)
Page	pp. 45 - 46

OA1-4 (Time: 14:45 - 15:00)

Title	Low-Temperature Chemical Vapor Deposition of Highly-Doped n-Type Si at High Growth Rate
Author	Ngoc Duy Nguyen, Roger Loo, Matty Caymax (IMEC, Belgium)
Page	pp. 47 - 48

OA1-5 (Time: 15:00 - 15:15)

Title	Role of UV Irradiation during Si Etching Process in Chlorine Plasma
Author	Butsurin Jinnai (Tohoku Univ., Japan), Fumihiko Oda, Yukihiro Morimoto (R&D Center, Ushio Inc., Japan), Seiji Samukawa (Tohoku Univ., Japan)
Page	pp. 49 - 50

OA1-6 (Time: 15:15 - 15:30)

Title	High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films
Author	Hirotaka Kaku, Seiichiro Higashi, Hirokazu Furukawa, Tatsuya Okada, Takuya Yorimoto, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ., Japan)
Page	pp. 51 - 52

Session OB1 Diamond Devices and Device-Oriented Characterizaion
Time: 14:00 - 15:30 Tuesday, November 13, 2007
Location: RoomB
Chairs: Y. Koide (NIMS, Japan), M. Oehme (Univ. of Stuttgart, Germany)

OB1-1 (Time: 14:00 - 14:15)

Title	Bias Dependence of RF Performance and Small-signal Equivalent Circuit in Diamond MISFETs
Author	Kazuyuki Hirama, Yoshikatsu Jingu, Hidenori Takayanagi, Keiichiro Yohara (Waseda Univ., Japan), Hitoshi Umezawa (AIST, Japan), Hiroshi Kawarada (Waseda Univ., Japan)
Page	pp. 53 - 54

OB1-2 (Time: 14:15 - 14:30)

Title	Images and Energy Distributions of Electrons Emitted from a Diamond pn-Junction Diode
Author	Shozo Kono (Tohoku Univ., Japan), Satoshi Koizumi (NIMS, Japan)
Page	pp. 55 - 56

OB1-3 (Time: 14:30 - 14:45)

Title	New Physical Model to Explain Logarithmic Time Dependence of Data Retention in Flash EEPROM
Author	Shiro Kamohara, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan)
Page	pp. 57 - 58

OB1-4 (Time: 14:45 - 15:00)

Title	Quantum Cascade Multi-Electron Injection into Si-Quantum-Dot Floating Gate Embedded in SiO₂ Matrix
Author	Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba, Japan)
Page	pp. 59 - 60

OB1-5 (Time: 15:00 - 15:15)

Title	Electroabsorption of Oxidized SiGe
Author	Jun Igarashi, Kiyoshi Kawamoto, S. Fukatsu (Univ. of Tokyo, Japan)
Page	pp. 61 - 62

OB1-6 (Time: 15:15 - 15:30)

Title	C-V Characterization of Schottky- and MIS-gate SiGe/Si HEMT Structures
Author	Norio Onojima, Akihumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (National Institute of Information and Communications Technology, Japan)
Page	pp. 63 - 64

Session OA2 Surface and Interface Control for Gate Stacks
Time: 15:45 - 17:15 Tuesday, November 13, 2007
Location: RoomA
Chairs: A. Toriumi (Univ. of Tokyo, Japan), M. Suemitsu (Tohoku Univ., Japan)

OA2-1 (Time: 15:45 - 16:00)

Title	Superior MOS Interface Properties of GeO₂/Ge Structures Fabricated by Ozone Oxidation
Author	Shin-ichi Takagi, Hiroshi Matsubara, Masashi Nishikawa, Takashi Sasada, Ryosho Nakane (Univ. of Tokyo, Japan), Satoshi Sugahara (Tokyo Inst. of Tech., Japan), Mitsuru Takenaka (Univ. of Tokyo, Japan)
Page	pp. 65 - 66

OA2-2 (Time: 16:00 - 16:15)

Title	Control of Fermi-Level Pinning at Metal/Germanium Interface by Inserting Ultra-thin Oxides
Author	Tomonori Nishimura, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 67 - 68

OA2-3 (Time: 16:15 - 16:30)

Title	Characterization of Ge MIS Interfaces with Si Passivation by Conductance Method
Author	Noriyuki Taoka (MIRAI-ASRC, Japan), Masatomi Harada, Yoshimi Yamashita, Toyoji Yamamoto, Naoharu Sugiyama (MIRAI-ASET, Japan), Shin-ichi Takagi (Univ. of Tokyo, MIRAI-ASRC, Japan)
Page	pp. 69 - 70

OA2-4 (Time: 16:30 - 16:45)

Title	Behavior of N Atoms on Atomic-Order Nitrided Si_0.5Ge_0.5(100)
Author	Nao Akiyama, Masao Sakuraba (Tohoku Univ., Japan), Bernd Tillack (IHP, Germany), Junichi Murota (Tohoku Univ., Japan)
Page	pp. 71 - 72

OA2-5 (Time: 16:45 - 17:00)

Title	Evaluation of Si₃N₄/Si Interface by UV Raman Spectroscopy
Author	Tetsuya Yoshida, Kosuke Yamasaki, Daisuke Kosemura, Yasuto Kakemura (Meiji Univ., Japan), Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ., Japan), Atsushi Ogura (Meiji Univ., Japan)
Page	pp. 73 - 74

OA2-6 (Time: 17:00 - 17:15)

Title	Dielectric Properties of the Interface between Si and SiO₂
Author	Sadakazu Wakui, Jun Nakamura, Akiko Natori (Univ. of Electro-Communications, Japan)
Page	pp. 75 - 76

Session OB2 Nanostructures
Time: 15:45 - 17:15 Tuesday, November 13, 2007
Location: RoomB
Chairs: M. Tabe (Shizuoka Univ., Japan), Y. Ono (NTT, Japan)

OB2-1 (Time: 15:45 - 16:00)

Title	Growth of Half-Centimeter Long Single- and Double-Walled Carbon Nanotubes by Radical CVD
Author	Takayuki Iwasaki, Tasuku Maki, Hiroshi Kawarada (Waseda Univ., Japan)
Page	pp. 77 - 78

OB2-2 (Time: 16:00 - 16:15)

Title	Morphology Control of Carbon Nanowalls Using Radical Injection Plasma Enhanced CVD
Author	Shigetoshi Maruyama (Nagoya Univ., Japan), Koji Yamakawa (Katagiri Engineering Co., Ltd., Japan), Hiroyuki Kano (NU Eco Engineering Co., Ltd., Japan), Mineo Hiramatsu (Meijo Univ., Japan), Masaru Hori (Nagoya Univ., Japan)
Page	pp. 79 - 80

OB2-3 (Time: 16:15 - 16:30)

Title	Self-Assembling of Negative Islands during The Evolution of Three-Dimensional Microstructures in Photo-Excited Ge Homoepitaxy
Author	Housei Akazawa (NTT, Japan)
Page	pp. 81 - 82

OB2-4 (Time: 16:30 - 16:45)

Title	Artificially-Positioned Ge Dot Array Formed by Sputter Epitaxy
Author	Yoshiyuki Suda, Yoichi Takahashi , Makoto Hirata, Hiroaki Hanafusa, Hiroyuki Ohashi (Tokyo Univ. of Agric. and Technol., Japan), Nobumitsu Hirose, Toshiaki Matsui (National Institute of Information and Communications Technology, Japan)
Page	pp. 83 - 84

OB2-5 (Time: 16:45 - 17:00)

Title	Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_1-xSn_x Layers on Ge(001) Substrates
Author	Masahiro Yamazaki, Shotaro Takeuchi, Osamu Nakatsuka (Nagoya Univ., Japan), Akira Sakai (Osaka Univ., Japan), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 85 - 86

OB2-6 (Time: 17:00 - 17:15)

Title	Strain-induced Wrinkling Patterns
Author	Wu-Ping Huang, Alexander I. Fedorchenko, Hung-Hsiang Cheng, An-Bang Wang (National Taiwan Univ., Taiwan)
Page	pp. 87 - 88

Session P Poster Session
Time: 17:30 - 19:30 Tuesday, November 13, 2007
Location: RoomC

P-1 (Growth and Characterization)

Title	Structural Characterization of SiGe Nanoclusters Formed by Rapid Thermal Annealing
Author	Alexandre M. P. dos Anjos, Ioshiaki Doi, José A. Diniz (State Univ. of Campinas, Brazil)
Page	pp. 89 - 90

P-2 (Growth and Characterization)

Title	Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain
Author	Masanori Tanaka, Taizoh Sadoh (Kyushu Univ., Japan), Jun Morioka, Tokuhide Kitamura (Toshiba Semiconductor, Japan), Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 91 - 92

P-3 (Growth and Characterization)

Title	Control of Electronic Properties of HfO₂ with Fluorine Doping from First-principles Calculation
Author	Tatsuo Schimizu, Masato Koyama (Toshiba, Japan)
Page	pp. 93 - 94

P-4 (Growth and Characterization)

Title	Theoretical Study of Electron Mobility for Silicon-Caron Alloys
Author	S. T. Chang, C. Y. Lin, S. H. Liao (National Chung Hsing Univ., Taiwan)
Page	pp. 95 - 96

P-5 (Growth and Characterization)

Title	Diffusion Behavior in Fe₃Si/Ge Hybrid Structures and Related Degradation of Axial Orientation
Author	Takafumi Jonishi (Kyoto Univ., Japan), Yu-chiro Ando (Kyushu Univ., Japan), Kazumasa Narumi (Japan Atomic Energy Agency, Japan), Mamoru Kumano, Koji Udeda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan), Yoshihito Maeda (Kyoto Univ., Japan)
Page	pp. 97 - 98

P-6 (Growth and Characterization)

Title	Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe₃Si and Ge
Author	Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh (Kyushu Univ., Japan), Yoshihito Maeda (Kyoto Univ., Japan), Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 99 - 100

P-7 (Growth and Characterization)

Title	Breakdown Field of Lateral-type Schottky Diodes of Diamond
Author	Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide (National Inst. for Materials Science, Japan), Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 101 - 102

P-8 (Growth and Characterization)

Title	Preparation of ZrO₂ Ultrathin Films as Gate Dielectrics by Reactive DC Magnetron Sputtering
Author	Ying Zhou, Nobuo Kojima, Kimihiro Sasaki (Kanazawa Univ., Japan)
Page	pp. 103 - 104

P-9 (Growth and Characterization)

Title	Enhanced Growth of Low-Resistivity Cobalt Silicide by Using a Co/Au/Co Trilayer Film on Si_0.8Ge_0.2 Virtual Substrate
Author	S. L. Cheng, H. Y. Chen, S. W. Lee (National Central Univ., Taiwan)
Page	pp. 105 - 106

P-10 (Growth and Characterization)

Title	Strained-Si with Carbon Incorporation for MOSFET Source/Drain Engineering
Author	M. H. Lee (National Taiwan Normal Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan), S. W. Lee (National Central Univ., Taiwan), P. S. Chen (Minghsin Univ. of Science and Tech., Taiwan), K.-W. Shen (National Taiwan Normal Univ., Taiwan), W.-C. Wang (National Chung Hsing Univ., Taiwan)
Page	pp. 107 - 108

P-11 (Growth and Characterization)

Title	Growth and Modification of Thin a-Si:H/a-Ge:H Bilayers to Sacrificial c-SiGe Alloys Through ArF Excimer Laser Assisted Processing
Author	Stefano Chiussi, F. Gontad, R. Rodriguez (Física Aplicada, E.T.S.I.I., Spain), C. Serra (Universidade de Vigo, Spain), J. Serra, B. Leon (Física Aplicada, E.T.S.I.I., Spain), T. Sulima, L. Höllt, L. Eisele (Universitaet der Bundeswehr Muenchen, Germany)
Page	pp. 109 - 110

P-12 (Growth and Characterization)

Title	Modification of Hydrogen Content and Crystallinity in Multi-layer Structures with Alternating Amorphous and Nano-crystalline Silicon Films Through Excimer Laser Assisted Processing
Author	Stefano Chiussi, F. Gontad, P. Gonzalez, B. Leon (Física Aplicada, E.T.S.I.I., Spain), C. Serra (Universidade de Vigo, Spain), S. A. Filonovich, P. Alpuim (Universidade do Minho, Campus de Azurem, Portugal), A. Rolo (Universidade do Minho, Campus de Gualtar, Portugal)
Page	pp. 111 - 112

P-13 (Growth and Characterization)

Title	Internal Photoemission Study on Charge Trapping Behavior in Rapid Thermal Oxides on Strained-Si/SiGe Heterolayers
Author	Milan Kumar Bera (City Univ. of Hong Kong, Hong Kong), Chandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), Sekhar Bhattacharya (Queen's Univ. of Belfast, Great Britain), Chinmay K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Page	pp. 113 - 114

P-14 (Growth and Characterization)

Title	New Fabrication of Strained Si/Si_1-yGe_y Dual Channel on Relaxed Si_1-xGe_x Virtual Substrate Using Ge Rich layer Formed by Oxidation
Author	Sang-Hoon Kim, Hyun-Cheol Bae, Sang-Heung Lee (Electronics and Telecommunications Research Institute, Republic of Korea)
Page	pp. 115 - 116

P-15 (Growth and Characterization)

Title	Low Temperature Formation of Silicon Nitride Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure
Author	Mitsutaka Matsumoto, Youhei Inayoshi, Maki Suemitsu (Tohoku Univ., Japan), Eiji Miyamoto, Takuya Yara, Setsuo Nakajima, Tsuyoshi Uehara (Sekisui Chemicals Co. Ltd, Japan), Yasutake Toyoshima (Energy Technology Research Institute, Japan)
Page	pp. 117 - 118

P-16 (Growth and Characterization)

Title	Formation of Relaxed SiGe on the Buffer Consists of Modified SiGe Islands by Si Pre-intermixing
Author	Pang Shiu Chen (Minghsin Univ. of Science and Tech., Taiwan), S. W. Lee (National Central Univ., Taiwan), M. H Lee (National Taiwan Normal Univ., Taiwan), C. W. Liu (National Taiwan Univ., Taiwan)
Page	pp. 119 - 120

P-17 (Growth and Characterization)

Title	Domain Structure of InSb Films Grown on Si(111) Substrate
Author	Kazunori Murata, Norsuryati Binti Ahmad, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama, Japan)
Page	pp. 121 - 122

P-18 (Growth and Characterization)

Title	Clarification of Band Structure at Metal-diamond Contact Using Device Simulation
Author	Tomoaki Masuzawa, Yoshifumi Shiraki, Yuki Kudo (International Christian Univ., Japan), Ichitaro Saito (Univ. of Cambridge, Great Britain), Hisato Yamaguchi (International Christian Univ., Japan), Takatoshi Yamada (National Institute of Advanced Industrial Science And Technology, Japan), Ken Okano (International Christian Univ., Japan)
Page	pp. 123 - 124

P-19 (Growth and Characterization)

Title	SR-PES Observation of Metastable Chemisorption State of Oxygen on Si(110)-16x2 Surface
Author	Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Satoshi Hasegawa, Takuya Nakano, Seiichi Goto (Tohoku Univ., Japan), Yuden Teraoka, Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan)
Page	pp. 125 - 126

P-20 (Growth and Characterization)

Title	Interface Characterization and Current Conduction in HfO₂-Gated MOS Capacitors
Author	H. W. Chen, S. Y. Chen, H. S. Haung (National Taipei Univ. of Tech., Taiwan), F. C. Chiu, C. H. Liu (Ming Chuan Univ., Taiwan), L. W. Cheng, C. T. Lin, G. H. Ma (Central R&D Division, United Microelectronics Corp. (UMC), Taiwan), P. C. Juan (Mingchi Univ. of Tech., Taiwan), H. L. Hwang (National Tsing Hua Univ., Taiwan)
Page	pp. 127 - 128

P-21 (Growth and Characterization)

Title	Infrared Study of Tris(dimethylamino)silane (TDMAS) Adsorption and Ozone Irradiation on Si(100) for Atomic Layer Deposition of SiO₂
Author	Fumihiko Hirose, Yuta Kinoshita (Yamagata Univ., Japan), Hironobu Miya (Hitachi Kokusai Electric Inc., Japan), Kazuhiro Hirahara (Shin-Etsu Chemical Co., Japan), Yasuo Kimura, Michio Niwano (Tohoku Univ., Japan)
Page	pp. 129 - 130

P-22 (Growth and Characterization)

Title	Infrared Study of Tetrakis(ethylmethylamino)hafnium (TEMAH) Adsorption and Ozone Irradiation for Atomic Layer Deposition of HfO₂
Author	Hironobu Miya (Hitachi Kokusai Electric Inc., Japan), Fumihiko Hirose, Yuta Kinoshita (Yamagata Univ., Japan), Kazuhiro Hirahara (Shin-Etsu Chemical Co., Japan), Yasuo Kimura, Michio Niwano (Tohoku Univ., Japan)
Page	pp. 131 - 132

P-23 (Growth and Characterization)

Title	Molecular Dynamics Study of Oxidation Process with SiO Emission in the Si/SiO₂ Interface
Author	Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta (Fujitsu Laboratories Limited, Japan)
Page	pp. 133 - 134

P-24 (Growth and Characterization)

Title	“Temperature Oscillation” as a Real-Time Monitoring of the Growth of 3C-SiC on Si Substrate
Author	Eiji Saito, Atsushi Konno, Takashi Ito (Tohoku Univ., Japan), Kanji Yasui (Nagaoka Univ. of Tech., Japan), Hideki Nakazawa (Hirosaki Univ., Japan), Tetsuo Endoh (Tohoku Univ., Japan), Yuzuru Narita (Kyushu Inst. of Tech., Japan), Maki Suemitsu (Tohoku Univ., Japan)
Page	pp. 135 - 136

P-25 (Growth and Characterization)

Title	Low Temperature Selective Epitaxial Growth of SiGe Layers Using Various Dielectric Mask Patterns and Process Conditions
Author	A-Ram Choi, Sang-Sik Choi (Chonbuk National Univ., Republic of Korea), Jin-Tae Kim, Deok-Ho Cho, Tae-Hyun Han (AUK Corp., Republic of Korea), Kyu-Hwan Shim (Chonbuk National Univ., Republic of Korea)
Page	pp. 137 - 138

P-26 (Growth and Characterization)

Title	Characterization of the Soft-X-ray Detectors Fabricated with High-quality CVD Diamond Thin-films
Author	Yoko Iwakaji, Masayuki Kanasugi, Osamu Maida (Osaka Univ., Japan), Yukiharu Takeda, Yuji Saitoh (Japan Atomic Energy Agency, Japan), Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 139 - 140

P-27 (Growth and Characterization)

Title	Electronic Structure and Junction Property of Hetero-epitaxial CVD Diamond on Ir(001)
Author	Naoki Amano, Hiroshi Kawata, Tadahiko Goto, Shozo Kono (Tohoku Univ., Japan)
Page	p. 141

P-28 (Growth and Characterization)

Title	Crystalline Quality Improvements of the Homoepitaxial CVD Diamond Films on the Vicinal Substrates
Author	Osamu Maida, Hidetaka Miyatake (Osaka Univ., Japan), Tokuyuki Teraji (National Inst. for Materials Science, Japan), Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 143 - 144

P-29 (Growth and Characterization)

Title	Characterization of Phosphor-Doped Homoepitaxial (100) Diamond Films Grown Using High-Power-Density MWPCVD Method with Conventional Quartz-Tube Chamber
Author	Takahiro Nakai, Osamu Maida, Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 145 - 146

P-30 (Growth and Characterization)

Title	In-Situ TEM Observation of Silicide Formation and Dopant Segregation in Ni Fully Silicided Gates
Author	Takuji Hosoi, Kentaro Shibahara (Hiroshima Univ., Japan), Minghui Song, Kazuo Furuya (NIMS, Japan)
Page	pp. 147 - 148

P-31 (Growth and Characterization)

Title	Diffusion Control of Soft-X-Ray-Excited Carriers in High-Quality CVD Diamond Layers to the HPHT Substrate
Author	Masayuki Kanasugi, Yoko Iwakaji, Takashi Yamamoto, Osamu Maida (Osaka Univ., Japan), Yukiharu Takeda, Yuji Saitoh (Japan Atomic Energy Agency, Japan), Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 149 - 150

P-32 (Growth and Characterization)

Title	Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition
Author	Hiroki Tanno, Masao Sakuraba (Tohoku Univ., Japan), Bernd Tillack (IHP, Germany), Junichi Murota (Tohoku Univ., Japan)
Page	pp. 151 - 152

P-33 (Growth and Characterization)

Title	Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_1-xGe_x/Si(100) Heterostructure
Author	Takahiro Seo, Masao Sakuraba, Junichi Murota (Tohoku Univ., Japan)
Page	pp. 153 - 154

P-34 (Formation and Characterization of Nanostructures)

Title	Modified Growth of Ge Quantum Dots Using C₂H₄ and SiCH₆ Mediation by Ultra-high Vacuum Chemical Vapor Deposition
Author	Sheng-Wei Lee (National Central Univ., Taiwan), Pang-Shiu Chen (Minghsin Univ. of Science and Tech., Taiwan), Min-Hung Lee (National Taiwan Normal Univ., Taiwan), Chee-Wee Liu (National Taiwan Univ., Taiwan)
Page	pp. 155 - 156

P-35 (Formation and Characterization of Nanostructures)

Title	Fabrication and Kinetics Investigation of Vertically Aligned Si Nanowires on (111)Si Substrate
Author	S. L. Cheng, Y. H. Chang, C. H. Chung (National Central Univ., Taiwan)
Page	pp. 157 - 158

P-36 (Formation and Characterization of Nanostructures)

Title	Room Temperature Growth of Crystalline Si Thin Films on Nano-Scaled Substrates Using DC Magnetron Sputtering Deposition Method
Author	Harunaka Yamaguchi, Osamu Maida, Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 159 - 160

P-37 (Formation and Characterization of Nanostructures)

Title	Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System
Author	Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota (Res. Inst. Electr. Comm., Tohoku Univ., Japan), Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa (Hitachi Kokusai Electric Inc., Japan)
Page	pp. 161 - 162

P-38 (Surface and Interface Control)

Title	Air Exposing Impact between Plasma Nitridation and Postnitridation Annealing on Fabrication of HfSiON Thin Film
Author	Sadayoshi Horii (Hitachi Kokusai Electric Inc., Japan), Dai Ishikawa (Semiconductor Leading Edge Technologies Inc, Japan), Atsushi Sano (Hitachi Kokusai Electric Inc., Japan), Satoshi Kamiyama, Takayuki Aoyama, Yasuo Nara (Semiconductor Leading Edge Technologies Inc, Japan)
Page	pp. 163 - 164

P-39 (Surface and Interface Control)

Title	Preparation of Thin TiN_x Film and Its Application to Extremely Thin Diffusion Barrier Without Intermixing Interface Layer
Author	Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech., Japan), Y. Hayasaka, E. Aoyagi (Tohoku Univ., Japan), Atsushi Noya (Kitami Inst. of Tech., Japan)
Page	pp. 165 - 166

P-40 (Surface and Interface Control)

Title	Studies on Dielectric Relaxation and Defect Generation for Reliability Assessments in Ultrathin High-k Gate Dielectrics on Ge
Author	Chandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), Milan Kumar Bera (City Univ. of Hong Kong, Hong Kong), Prabir Kumar Bose (Jadavpur Univ., Jadavpur, Kolkata, India), C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Page	pp. 167 - 168

P-41 (Surface and Interface Control)

Title	Electrical Characterization and Carrier Transportation in Hf-silicate Dielectric Using ALD Gate Stacks for 90 nm Node MOSFETs
Author	H.W. Chen, K. C. Chen, S. Y. Chen, H. S. Haung (National Taipei Univ. of Tech., Taiwan), C. H. Liu, F. C. Chiu (Ming Chuan Univ., Taiwan), L. W. Cheng, C. T. Lin, G. H. Ma (Central R&D Division, United Microelectronics Corp. (UMC), Taiwan)
Page	pp. 169 - 170

P-42 (Surface and Interface Control)

Title	Effect of In and Sb Mono-layers to Form Rotated InSb Films on Si(111) Substrate
Author	Mitsufumi Saito, Masayuki Mori, Koichi Maezawa (Univ. of Toyama, Japan)
Page	pp. 171 - 172

P-43 (Surface and Interface Control)

Title	Grain Boundaries Stuffed Ru Film for Advanced Cu Diffusion Barrier
Author	Dung-Ching Perng, Jia-Bin Yeh, Kuo-Chung Hsu (National Cheng Kung Univ., Taiwan)
Page	pp. 173 - 174

P-44 (Surface and Interface Control)

Title	Effect of Electrical Degenerated Layer on the Carrier Transport Property of ZnO Thin Films on YSZ substrate
Author	Shinya Sakamoto, Takeshi Oshio, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura (Osaka Prefecture Univ., Japan)
Page	pp. 175 - 176

P-45 (Surface and Interface Control)

Title	Dielectric Properties of Ferroelectric/DMS Heterointerface Using YMnO₃ and Ce Doped Si
Author	Daisuke Shindo, Takeshi Yoshimura, Norifumi Fujimura (Osaka Prefecture Univ., Japan)
Page	pp. 177 - 178

P-46 (Surface and Interface Control)

Title	LEED and AFM Study of Cl-terminated Ge(111) Surfaces after HCl Dipping
Author	Kazufumi Yoneda, Junichi Uchikoshi, Mizuho Morita, Kenta Arima (Osaka Univ., Japan)
Page	pp. 179 - 180

P-47 (Surface and Interface Control)

Title	Evaluation of Effective Work Function in Ru/HfSiON/SiO₂ Gate Stack Structures – Thickness Dependence in Bottom SiO₂ layer
Author	Hiromichi Yoshinaga, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Selete, Japan)
Page	pp. 181 - 182

P-48 (Process Technology)

Title	Low Temperature Oxidation of SiGe by Liquid-Phase Deposition
Author	Yu-Hung Chen, Chung-Yuan Kung (National Chung Hsing Univ., Taiwan), Jun-Dar Hwang, Hung-Yu Lin, Hsuan-Jung Chan (Da-Yeh Univ., Taiwan)
Page	pp. 183 - 184

P-49 (Process Technology)

Title	Surface Passivation of InGaP/GaAs HBT Using Silicon Nitride Film Deposited by ECR-CVD Plasma
Author	Leandro Tiago Manera, Leonardo Breseghello Zoccal, José Alexandre Diniz, Peter J. Tatsch, Ioshiaki Doi (State Univ. of Campinas, Brazil)
Page	pp. 185 - 186

P-50 (Process Technology)

Title	Selective Vapor Phase Etching of SiGe by HCl in a RPCVD Reactor
Author	Yuji Yamamoto, Klaus Köpke, Rainer Kurps, Bernd Tillack (IHP, Germany)
Page	pp. 187 - 188

P-51 (Process Technology)

Title	Characterization of the Low Temperature Dopant Activation Behavior at NiSi/Silicon Interface Formed by Implant Into Silicide Method
Author	Kow-Ming Chang, Jian-Hong Lin, Cheng-Yen Sun (National Chiao Tung Univ., Taiwan)
Page	pp. 189 - 190

P-52 (Process Technology)

Title	Characterization of the Low Temperature Activated N⁺/P Junction Formed by Implant Into Silicide Method
Author	Kow-Ming Chang, Jian-Hong Lin, Chih-Hsiang Yang (National Chiao Tung Univ., Taiwan)
Page	pp. 191 - 192

P-53 (Process Technology)

Title	The Effects of Plasma Treatment on the Thermal Stability of HfO₂ Thin Films
Author	Kwo-Ming Chang, Bwo-Ning Chen, Shih-Ming Huang (National Chiao Tung Univ., Taiwan)
Page	pp. 193 - 194

P-54 (Process Technology)

Title	Controlling the Strain of SiGe Virtual Substrate by Incorporating Boron (B) into the Underlying Si Layer
Author	Wu-Ping Huang, Ke-Yao Wang (National Taiwan Univ., Taiwan), Wei-Shi Tan (Nanjing Univ. of Science and Tech., China), Hung-Hsiang Cheng (National Taiwan Univ., Taiwan)
Page	pp. 195 - 196

P-55 (Process Technology)

Title	Design and Optimization of Embedded SiGe Source/Drain pMOSFETs
Author	Tapas Maiti (Indian Inst. of Tech., Kharagpur, India), Arup Saha (Synopsys (India) Pvt. Ltd., India), Chinmay Maiti (Indian Inst. of Tech., Kharagpur, India)
Page	pp. 197 - 198

P-56 (Process Technology)

Title	Low-Temperature Source/Drain Contact Formation Using Silicidation Induced Activation of Implanted Impurities
Author	Tanemasa Asano, Masahiko Esaki, Gou Nakagawa (Kyushu Univ., Japan)
Page	pp. 199 - 200

P-57 (Process Technology)

Title	Effects of High-Concentration Phosphorus-Doping on Crystal Quality and Lattice Strain in SiGe HBTs
Author	Katsuya Oda, Makoto Miura (Central Research Laboratory, Hitachi Ltd., Japan), Hiromi Shimamoto (Renesas Northern Japan Semiconductor, Inc., Japan), Katsuyoshi Washio (Central Research Laboratory, Hitachi Ltd., Japan)
Page	pp. 201 - 202

P-58 (Device Technology:)

Title	Short Channel Effect Improved Strained-Si:C-Source/Drain PMOSFETs
Author	M. H. Lee (National Taiwan Normal Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan), S. Maikap (Chang Gung Univ., Taiwan), K.-W. Shen (National Taiwan Normal Univ., Taiwan), W.-C. Wang (National Chung Hsing Univ., Taiwan)
Page	pp. 203 - 204

P-59 (Device Technology:)

Title	Si/SiGe/Si Quantum Well Schottky Barrier Diodes
Author	Ping-Sheng Kuo, C. -H. Lin, C. -Y. Peng, Y. -C. Fu, C. W. Liu (National Taiwan Univ., Taiwan)
Page	pp. 205 - 206

P-60 (Device Technology:)

Title	The Switch of the Worst Case on NBTI and Hot Carrier Reliability for 0.13 µm PMOSFETs
Author	Chia-Hao Tu, Shuang-Yuan Chen, Meng-Hong Lin, Zhen-Ying Hsieh (National Taipei Univ. of Tech., Taiwan), Mu-Chun Wang (Minghsin Univ. of Science and Tech., Taiwan), Ssu-Han Wu, Sam Jhou, Joe Ko (Special Technology Division, United Microelectronics Corp., Taiwan), Heng Sheng Haung (National Taipei Univ. of Tech., Taiwan)
Page	pp. 207 - 208

P-61 (Device Technology:)

Title	Valence Subband Properties of Strained Si_1-xC_x Alloys in PMOS Inversion Layer
Author	Shu-Tong Chang, Jun Wei Fan, Chung-Yi Lin (National Chung Hsing Univ., Taiwan)
Page	pp. 209 - 210

P-62 (Device Technology:)

Title	Comparison Study about Low Frequency Noise and Hot-carrier Reliability of SiGe PD-SOI pMOSFETs
Author	Sang-Sik Choi, A-Ram Choi, Jeon-Wook Yang (Chonbuk National Univ., Republic of Korea), Yong-Woo Hwang, Deok-Ho Cho (AUK, Republic of Korea), Kyu-Hwan Shim (Chonbuk National Univ., Republic of Korea)
Page	pp. 211 - 212

P-63 (Others)

Title	Leakage Current and Paramagnetic Defects in SiCN Dielectrics for Copper Diffusion Barrier
Author	Kiyoteru Kobayashi, Hisashi Yokoyama, Masato Endoh, Satoshi Hosaka, Mitsuo Kato (Tokai Univ., Japan)
Page	pp. 213 - 214

Wednesday, November 14, 2007

Session OA3 High-k Gate Stacks
Time: 9:00 - 10:45 Wednesday, November 14, 2007
Location: RoomA
Chairs: Y. Nara (Selete, Japan), P. D. Ye (Purdue Univ., United States)

OA3-1 (Time: 9:00 - 9:15)

Title	Impact of Low Temperature Anneal on Effective Work Function and Chemical Bonding Features for Ru/HfSiON/SiON Gate Stack
Author	Akio Ohta, Hiromichi Yoshinaga, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Semiconductor Leading Edge technologies, Inc., Japan)
Page	pp. 215 - 216

OA3-2 (Time: 9:15 - 9:30)

Title	Band Bending Measurement of HfO₂/SiO₂/Si Capacitor with ultra-thin La₂O₃ Insertion by XPS
Author	Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 217 - 218

OA3-3 (Time: 9:30 - 9:45)

Title	Counter-Dipole Formation at TaC_X/HfO₂ and HfC_X/HfO₂ Interfaces Compensating HfO₂/SiO₂ Dipole-induced V_FB Shift in MeC_X/HfO₂/SiO₂/Si Structures
Author	Wataru Mizubayashi (MIRAI-ASRC, AIST, Japan), Koji Akiyama (MIRAI-ASET, Japan), Wenwu Wang (MIRAI-ASRC, AIST, Japan), Minoru Ikeda, Kunihiko Iwamoto, Yuuichi Kamimuta, Akito Hirano (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 219 - 220

OA3-4 (Time: 9:45 - 10:00)

Title	Role of Oxygen Vacancy in HfO₂ and Al₂O₃ Dielectrics on Effective Workfunction Shifts Using Hf_xRu_1-x Gates
Author	Yu Nunoshige (Shibaura Inst. of Tech., Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan)
Page	pp. 221 - 222

OA3-5 (Time: 10:00 - 10:15)

Title	Structural Optimization of HfTiSiO High-k Gate Dielectrics by Utilizing In-Situ PVD-Based Fabrication Method
Author	Hiroaki Arimura, Shinya Horie (Osaka Univ., Japan), Takashi Minami, Naomu Kitano, Motomu Kosuda (Canon ANELVA Corp., Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 223 - 224

OA3-6 (Time: 10:15 - 10:30)

Title	Improving Hafnium Oxide Reliability by Using Plasma Immersion Ion Implantation of Aluminium
Author	Banani Sen, Bingliang Yang, Hei Wong, C. W. Kok, P.K. Chu, Amping Huang (City Univ. of Hong Kong, Hong Kong)
Page	pp. 225 - 226

OA3-7 (Time: 10:30 - 10:45)

Title	The Impact of Post Deposition NH₃-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)₃
Author	Ryo Yougauchi, Akio Ohta, Yuki Munetaka, Hideki Murakami, Seiichirou Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan)
Page	pp. 227 - 228

Session OB3 Si/Ge-based Transistors
Time: 9:00 - 10:45 Wednesday, November 14, 2007
Location: RoomB
Chairs: Y. C. Yeo (National Univ. of Singapore, Singapore), K. Natori (Univ. of Tsukuba, Japan)

OB3-1 (Time: 9:00 - 9:15)

Title	On the Optimization of SiGe PNP HBT in a High-voltage CBiCMOS Process
Author	Tatsuya Tominari (Hitachi, Ltd., Japan), Makoto Miura (Central Research Laboratory, Hitachi Ltd., Japan), Mitsuru Arai (Hitachi ULSI Systems Co., Ltd., Japan), Yoshinori Yoshida, Hidenori Sato, Takayuki Aoki (Hitachi, Ltd., Japan), Katsuyoshi Washio (Central Research Laboratory, Hitachi Ltd., Japan), Takashi Hashimoto (Hitachi, Ltd., Japan)
Page	pp. 229 - 230

OB3-2 (Time: 9:15 - 9:30)

Title	Fluctuation of Threshold Voltage in Strained Si MOSFETs Induced by Strain Variation in Strained-Si Channels on SGOI Substrates
Author	Naoharu Sugiyama, Toshinori Numata, Norio Hirashita, Toshifumi Irisawa (MIRAI-ASET, Japan), Shin-ichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 231 - 232

OB3-3 (Time: 9:30 - 9:45)

Title	Effects of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method
Author	Sanjeewa Dissanayake, Satoshi Tanabe (Univ. of Tokyo, Japan), Satoshi Sugahara (Tokyo Inst. of Tech., Japan), Mitsuru Takenaka, Shin-ichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 233 - 234

OB3-4 (Time: 9:45 - 10:00)

Title	Fabrication of Ge-channel MOSFETs by Using Replacement Gate Process and Selective Epitaxial Growth
Author	Koichi Terashima, Akihito Tanabe, Takashi Nakagawa, Kaoru Mori, Taeko Ikarashi (NEC Corp., Japan), Junko Nakatsuru, Hiroki Date, Manabu Ikemoto (Canon ANELVA Corp., Japan), Toru Tatsumi (NEC Corp., Japan)
Page	pp. 235 - 236

OB3-5 (Time: 10:00 - 10:15)

Title	Source/Drain Engineering for MOSFETs with e-Si:C Technology
Author	Hiroshi Itokawa, Nobuaki Yasutake, Naoki Kusunoki, Shintaro Okamoto, Nobutoshi Aoki, Ichiro Mizushima (Toshiba Corp., Japan)
Page	pp. 237 - 238

OB3-6 (Time: 10:15 - 10:30)

Title	Leakage Current Study of Si1-xCx Embedded Source/Drain Junctions
Author	Eddy Simoen, Bertrand Vissouvanadin, Mireia Bargallo Gonzalez, Peter Verheyen, Roger Loo, Cor Claeys (IMEC, Belgium), Vladimir Machkaoutsan (ASM Belgium, Belgium), Mathias Bauer, Shawn Thomas (ASM America, United States), Joan-Ping Lu, Rick Wise (Texas Instruments, United States)
Page	pp. 239 - 240

OB3-7 (Time: 10:30 - 10:45)

Title	Exploring Width Effect on Performance Enhancement in NMOSFETs with Silicon-Carbon Alloy Stressor and Tensile Stress Silicon Nitride Linear
Author	Wei–Ching Wang, Shu-Tong Chang, Jacky Huang (National Chung Hsing Univ., Taiwan), Shu-Hui Liao (ChungChou Inst. of Tech., Taiwan), Chung-Yi Lin (National Chung Hsing Univ., Taiwan)
Page	pp. 241 - 242

Session I6 Invited Session: Diamond and C-Related Film Formation and Its Applications
Time: 11:10 - 12:25 Wednesday, November 14, 2007
Location: RoomA
Chairs: T. Ito (Osaka Univ., Japan), H. Kawarada (Waseda Univ., Japan)

I6-1 (Time: 11:10 - 11:35)

Title	(Invited Paper) Metal-Diamond Semiconductor Interface and Photodiode Application
Author	Yasuo Koide (National Institute for Materials Science (NIMS), Japan)
Page	pp. 243 - 244

I6-2 (Time: 11:35 - 12:00)

Title	(Invited Paper) Surface, Interface and Doping Science of Diamond and FET Applications
Author	Hiroshi Kawarada (Waseda Univ., Japan)
Page	pp. 245 - 246

I6-3 (Time: 12:00 - 12:25)

Title	(Invited Paper) The Present Status and Future of SiC Processes
Author	Kenji Fukuda (Power Electronics Research Center, AIST, Japan)
Page	pp. 247 - 248

Session I7 Invited Session: High-k Materials on Semiconductors
Time: 14:00 - 15:15 Wednesday, November 14, 2007
Location: RoomA
Chairs: S. Miyazaki (Hiroshima Univ., Japan), S. Zaima (Nagoya Univ., Japan)

I7-1 (Time: 14:00 - 14:25)

Title	(Invited Paper) Control of High-k / Germanium Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilization
Author	Koji Kita, Toshitake Takahashi, Hideyuki Nomura, Sho Suzuki, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 249 - 250

I7-2 (Time: 14:25 - 14:50)

Title	(Invited Paper) Opportunities and Challenges for High-k/III-V Integration
Author	Peide D. Ye (Purdue Univ., United States)
Page	pp. 251 - 252

I7-3 (Time: 14:50 - 15:15)

Title	(Invited Paper) High-k/Metal Gate Stack for Advanced CMOS Technology
Author	Yasuo Nara (Selete, Japan)
Page	pp. 253 - 254

Session C2 Closing
Time: 15:15 - 15:30 Wednesday, November 14, 2007
Location: RoomA
Chair: T. Okumura (Tokyo Metropolitan Univ., Japan)

Fifth International Symposium on Control of Semiconductor Interfaces Technical Program

Session Schedule

List of Papers

Fifth International Symposium on Control of Semiconductor Interfaces
Technical Program