Monday, November 12, 2007 |
Title | (Keynote Address) Prospects for Future ULSI Technology |
Author | Masataka Hirose (National Institure of Advanced Industrial Science and Technology, Japan) |
Page | pp. 1 - 2 |
Title | (Keynote Address) Current Topics of SiGe Heterodevices |
Author | E. Kasper (Univ. Stuttgart, Germany) |
Page | pp. 3 - 4 |
Title | (Invited Paper) Ballistic Transport in Nanoscale Transistor |
Author | Kenji Natori (Univ. of Tsukuba, Japan) |
Page | pp. 5 - 6 |
Title | (Invited Paper) A New Strain-Transfer Concept to Exploit Lattice Interactions at Semiconductor Interfaces for Strain Engineering in Transistors |
Author | Yee-Chia Yeo (National Univ. of Singapore, Singapore) |
Page | pp. 7 - 8 |
Title | (Invited Paper) Charge Transport in Boron-Doped Nano MOSFETs: Towards Single-Dopant Electronics |
Author | Yukinori Ono, Mohammed Khalafalla, Katsuhiko Nishiguchi, Kei Takashina, Akira Fujiwara (NTT, Japan), Seiji Horiguchi (Akita Univ., Japan), Hiroshi Inokawa (Shizuoka Univ., Japan), Yasuo Takahashi (Hokkaido Univ., Japan) |
Page | pp. 9 - 10 |
Title | (Invited Paper) Si Single-Electron Devices: Interaction with Individual Dopants and Photons |
Author | Michiharu Tabe, Ratno Nuryadi, Daniel Moraru, Zainal Arif Burhanudin, Hiroya Ikeda (Shizuoka Univ., Japan) |
Page | pp. 11 - 12 |
Title | (Invited Paper) Base Doping and Dopant Profile Control of SiGe NPN and PNP HBTs |
Author | Bernd Tillack, Bernd Heinemann, Dieter Knoll, Holger Rucker, Yuji Yamamoto (IHP, Germany) |
Page | pp. 13 - 14 |
Title | (Invited Paper) Interface Control in Dopant-Segregated Schottky Source/Drain Technology for Future CMOS |
Author | Junji Koga, Atsuhiro Kinoshita, Takashi Yamauchi (Toshiba Corp., Japan) |
Page | pp. 15 - 16 |
Title | (Invited Paper) 45nm CMOS Technology by SiGe Low Temperature Selective Epitaxial Technique |
Author | Naoyoshi Tamura, Yousuke Shimamune (Fujitsu Laboratories Ltd., Japan) |
Page | pp. 17 - 18 |
Title | (Invited Paper) Progress in III-V Material Integration with Si Substrates and Si Processing for III-V FET and Optoelectronic Integration |
Author | E.A. Fitzgerald, L. Yang, C. Dohrman, K. Chilukuri, S. Gupta, C. Cheng (MIT, United States) |
Page | pp. 19 - 20 |
Title | (Invited Paper) Reduced Self-Heating by Strained Silicon Substrate Engineering |
Author | Anthony O'Neill (Newcastle Univ., Great Britain) |
Page | pp. 21 - 22 |
Title | (Invited Paper) On True Silicon-on-nothing MOSFETs: Fabrication by Si Layer Transfer over the Pre-defined Cavity and Electrical Characterization |
Author | Valeriya Kilchytska (Université catholique de Louvain, Microelectronics Lab., Belgium), Tsung Ming Chung, Benoit Olbrechts (Université catholique de Louvain, Microwave Lab., Belgium), Yaroslav Vovk (Institute of Semiconductor Physics, Ukraine), Denis Flandre (Université catholique de Louvain, Microelectronics Lab., Belgium), Jean-Pierre Raskin (Université catholique de Louvain, Microwave Lab., Belgium) |
Page | pp. 23 - 24 |
Tuesday, November 13, 2007 |
Title | (Invited Paper) Interface Control of High k Gate Dielectrics and Ge |
Author | Matty Caymax, Michel Houssa, Geoffrey Pourtois, Florence Bellenger, Koen Martens, Annelies Delabie, Sven Van Elshocht (IMEC, Belgium) |
Page | pp. 25 - 26 |
Title | (Invited Paper) Low Temperature SiGe Films Formation with NFH Radical Precleaning |
Author | Michio Ishikawa, Eiichi Mizuno (Institute for Semiconductor Technologies, ULVAC, Inc., Japan), Seiichi Takahashi, Akira Jinzu (Semiconductor Division2, ULVAC, Inc., Japan) |
Page | pp. 27 - 28 |
Title | (Invited Paper) Si(Ge):Mn Based Materials for Spintronic Applications |
Author | V. Le Thanh, L. Michez, S. Olive-Mendez, A. Barski, J. Derrien (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille, France) |
Page | pp. 29 - 30 |
Title | (Invited Paper) Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures |
Author | Akira Sakai (Osaka Univ., Japan), Shotaro Takeuchi, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan) |
Page | pp. 31 - 32 |
Title | (Invited Paper) Optical and Electrical Evaluations of Defects in SiGe Thin Layer |
Author | Hiroshi Nakashima, Dong Wang (Kyushu Univ., Japan) |
Page | pp. 33 - 34 |
Title | (Invited Paper) Si Nano-photodiode with a Surface-Plasmon Antenna |
Author | Junichi Fujikata, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi (NEC Corp., Japan) |
Page | pp. 35 - 36 |
Title | (Invited Paper) Luminescence of β-FeSi2 and Application to Photonics |
Author | Yoshihito Maeda (Kyoto Univ., Japan) |
Page | pp. 37 - 38 |
Title | (Invited Paper) MBE Growth of SiGe with High Ge Content for Optical Applications |
Author | Michael Oehme, Jens Werner, Olaf Kirfel, Erich Kasper (Univ. Stuttgart, Germany) |
Page | pp. 39 - 40 |
Title | Characterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction |
Author | Osamu Nakatsuka, Katsunori Yukawa, Shogo Mochizuki (Nagoya Univ., Japan), Akira Sakai (Osaka Univ., Japan), Kazunori Fukuda, Shigeru Kimura, Osami Sakata (Japan Synchrotron Radiation Research Institute, Japan), Koji Izunome, Takeshi Senda, Eiji Toyoda (Covalent Materials Corp., Japan), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan) |
Page | pp. 41 - 42 |
Title | Strain Reduction in Heavily Arsenic Doped SiGe |
Author | Gaël Borot, Laurent Rubaldo (STMicroelectronics, France), Xavier Mescot, Martine Gri, Gérard Ghibaudo (IMEP, INPG, France), Didier Dutartre (STMicroelectronics, France) |
Page | pp. 43 - 44 |
Title | Carrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition |
Author | Cheng-Han Lee, C. -Y. Yu, C. M. Lin (National Taiwan Univ., Taiwan), H. Lin, W. -H. Chang (National Chiao Tung Univ., Taiwan), C. W. Liu (National Taiwan Univ., Taiwan) |
Page | pp. 45 - 46 |
Title | Low-Temperature Chemical Vapor Deposition of Highly-Doped n-Type Si at High Growth Rate |
Author | Ngoc Duy Nguyen, Roger Loo, Matty Caymax (IMEC, Belgium) |
Page | pp. 47 - 48 |
Title | Role of UV Irradiation during Si Etching Process in Chlorine Plasma |
Author | Butsurin Jinnai (Tohoku Univ., Japan), Fumihiko Oda, Yukihiro Morimoto (R&D Center, Ushio Inc., Japan), Seiji Samukawa (Tohoku Univ., Japan) |
Page | pp. 49 - 50 |
Title | High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films |
Author | Hirotaka Kaku, Seiichiro Higashi, Hirokazu Furukawa, Tatsuya Okada, Takuya Yorimoto, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ., Japan) |
Page | pp. 51 - 52 |
Title | Bias Dependence of RF Performance and Small-signal Equivalent Circuit in Diamond MISFETs |
Author | Kazuyuki Hirama, Yoshikatsu Jingu, Hidenori Takayanagi, Keiichiro Yohara (Waseda Univ., Japan), Hitoshi Umezawa (AIST, Japan), Hiroshi Kawarada (Waseda Univ., Japan) |
Page | pp. 53 - 54 |
Title | Images and Energy Distributions of Electrons Emitted from a Diamond pn-Junction Diode |
Author | Shozo Kono (Tohoku Univ., Japan), Satoshi Koizumi (NIMS, Japan) |
Page | pp. 55 - 56 |
Title | New Physical Model to Explain Logarithmic Time Dependence of Data Retention in Flash EEPROM |
Author | Shiro Kamohara, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan) |
Page | pp. 57 - 58 |
Title | Quantum Cascade Multi-Electron Injection into Si-Quantum-Dot Floating Gate Embedded in SiO2 Matrix |
Author | Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba, Japan) |
Page | pp. 59 - 60 |
Title | Electroabsorption of Oxidized SiGe |
Author | Jun Igarashi, Kiyoshi Kawamoto, S. Fukatsu (Univ. of Tokyo, Japan) |
Page | pp. 61 - 62 |
Title | C-V Characterization of Schottky- and MIS-gate SiGe/Si HEMT Structures |
Author | Norio Onojima, Akihumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (National Institute of Information and Communications Technology, Japan) |
Page | pp. 63 - 64 |
Title | Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation |
Author | Shin-ichi Takagi, Hiroshi Matsubara, Masashi Nishikawa, Takashi Sasada, Ryosho Nakane (Univ. of Tokyo, Japan), Satoshi Sugahara (Tokyo Inst. of Tech., Japan), Mitsuru Takenaka (Univ. of Tokyo, Japan) |
Page | pp. 65 - 66 |
Title | Control of Fermi-Level Pinning at Metal/Germanium Interface by Inserting Ultra-thin Oxides |
Author | Tomonori Nishimura, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 67 - 68 |
Title | Characterization of Ge MIS Interfaces with Si Passivation by Conductance Method |
Author | Noriyuki Taoka (MIRAI-ASRC, Japan), Masatomi Harada, Yoshimi Yamashita, Toyoji Yamamoto, Naoharu Sugiyama (MIRAI-ASET, Japan), Shin-ichi Takagi (Univ. of Tokyo, MIRAI-ASRC, Japan) |
Page | pp. 69 - 70 |
Title | Behavior of N Atoms on Atomic-Order Nitrided Si0.5Ge0.5(100) |
Author | Nao Akiyama, Masao Sakuraba (Tohoku Univ., Japan), Bernd Tillack (IHP, Germany), Junichi Murota (Tohoku Univ., Japan) |
Page | pp. 71 - 72 |
Title | Evaluation of Si3N4/Si Interface by UV Raman Spectroscopy |
Author | Tetsuya Yoshida, Kosuke Yamasaki, Daisuke Kosemura, Yasuto Kakemura (Meiji Univ., Japan), Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ., Japan), Atsushi Ogura (Meiji Univ., Japan) |
Page | pp. 73 - 74 |
Title | Dielectric Properties of the Interface between Si and SiO2 |
Author | Sadakazu Wakui, Jun Nakamura, Akiko Natori (Univ. of Electro-Communications, Japan) |
Page | pp. 75 - 76 |
Title | Growth of Half-Centimeter Long Single- and Double-Walled Carbon Nanotubes by Radical CVD |
Author | Takayuki Iwasaki, Tasuku Maki, Hiroshi Kawarada (Waseda Univ., Japan) |
Page | pp. 77 - 78 |
Title | Morphology Control of Carbon Nanowalls Using Radical Injection Plasma Enhanced CVD |
Author | Shigetoshi Maruyama (Nagoya Univ., Japan), Koji Yamakawa (Katagiri Engineering Co., Ltd., Japan), Hiroyuki Kano (NU Eco Engineering Co., Ltd., Japan), Mineo Hiramatsu (Meijo Univ., Japan), Masaru Hori (Nagoya Univ., Japan) |
Page | pp. 79 - 80 |
Title | Self-Assembling of Negative Islands during The Evolution of Three-Dimensional Microstructures in Photo-Excited Ge Homoepitaxy |
Author | Housei Akazawa (NTT, Japan) |
Page | pp. 81 - 82 |
Title | Artificially-Positioned Ge Dot Array Formed by Sputter Epitaxy |
Author | Yoshiyuki Suda, Yoichi Takahashi , Makoto Hirata, Hiroaki Hanafusa, Hiroyuki Ohashi (Tokyo Univ. of Agric. and Technol., Japan), Nobumitsu Hirose, Toshiaki Matsui (National Institute of Information and Communications Technology, Japan) |
Page | pp. 83 - 84 |
Title | Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates |
Author | Masahiro Yamazaki, Shotaro Takeuchi, Osamu Nakatsuka (Nagoya Univ., Japan), Akira Sakai (Osaka Univ., Japan), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan) |
Page | pp. 85 - 86 |
Title | Strain-induced Wrinkling Patterns |
Author | Wu-Ping Huang, Alexander I. Fedorchenko, Hung-Hsiang Cheng, An-Bang Wang (National Taiwan Univ., Taiwan) |
Page | pp. 87 - 88 |
Title | Structural Characterization of SiGe Nanoclusters Formed by Rapid Thermal Annealing |
Author | Alexandre M. P. dos Anjos, Ioshiaki Doi, José A. Diniz (State Univ. of Campinas, Brazil) |
Page | pp. 89 - 90 |
Title | Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain |
Author | Masanori Tanaka, Taizoh Sadoh (Kyushu Univ., Japan), Jun Morioka, Tokuhide Kitamura (Toshiba Semiconductor, Japan), Masanobu Miyao (Kyushu Univ., Japan) |
Page | pp. 91 - 92 |
Title | Control of Electronic Properties of HfO2 with Fluorine Doping from First-principles Calculation |
Author | Tatsuo Schimizu, Masato Koyama (Toshiba, Japan) |
Page | pp. 93 - 94 |
Title | Theoretical Study of Electron Mobility for Silicon-Caron Alloys |
Author | S. T. Chang, C. Y. Lin, S. H. Liao (National Chung Hsing Univ., Taiwan) |
Page | pp. 95 - 96 |
Title | Diffusion Behavior in Fe3Si/Ge Hybrid Structures and Related Degradation of Axial Orientation |
Author | Takafumi Jonishi (Kyoto Univ., Japan), Yu-chiro Ando (Kyushu Univ., Japan), Kazumasa Narumi (Japan Atomic Energy Agency, Japan), Mamoru Kumano, Koji Udeda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan), Yoshihito Maeda (Kyoto Univ., Japan) |
Page | pp. 97 - 98 |
Title | Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge |
Author | Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh (Kyushu Univ., Japan), Yoshihito Maeda (Kyoto Univ., Japan), Masanobu Miyao (Kyushu Univ., Japan) |
Page | pp. 99 - 100 |
Title | Breakdown Field of Lateral-type Schottky Diodes of Diamond |
Author | Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide (National Inst. for Materials Science, Japan), Toshimichi Ito (Osaka Univ., Japan) |
Page | pp. 101 - 102 |
Title | Preparation of ZrO2 Ultrathin Films as Gate Dielectrics by Reactive DC Magnetron Sputtering |
Author | Ying Zhou, Nobuo Kojima, Kimihiro Sasaki (Kanazawa Univ., Japan) |
Page | pp. 103 - 104 |
Title | Enhanced Growth of Low-Resistivity Cobalt Silicide by Using a Co/Au/Co Trilayer Film on Si0.8Ge0.2 Virtual Substrate |
Author | S. L. Cheng, H. Y. Chen, S. W. Lee (National Central Univ., Taiwan) |
Page | pp. 105 - 106 |
Title | Strained-Si with Carbon Incorporation for MOSFET Source/Drain Engineering |
Author | M. H. Lee (National Taiwan Normal Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan), S. W. Lee (National Central Univ., Taiwan), P. S. Chen (Minghsin Univ. of Science and Tech., Taiwan), K.-W. Shen (National Taiwan Normal Univ., Taiwan), W.-C. Wang (National Chung Hsing Univ., Taiwan) |
Page | pp. 107 - 108 |
Title | Growth and Modification of Thin a-Si:H/a-Ge:H Bilayers to Sacrificial c-SiGe Alloys Through ArF Excimer Laser Assisted Processing |
Author | Stefano Chiussi, F. Gontad, R. Rodriguez (Física Aplicada, E.T.S.I.I., Spain), C. Serra (Universidade de Vigo, Spain), J. Serra, B. Leon (Física Aplicada, E.T.S.I.I., Spain), T. Sulima, L. Höllt, L. Eisele (Universitaet der Bundeswehr Muenchen, Germany) |
Page | pp. 109 - 110 |
Title | Modification of Hydrogen Content and Crystallinity in Multi-layer Structures with Alternating Amorphous and Nano-crystalline Silicon Films Through Excimer Laser Assisted Processing |
Author | Stefano Chiussi, F. Gontad, P. Gonzalez, B. Leon (Física Aplicada, E.T.S.I.I., Spain), C. Serra (Universidade de Vigo, Spain), S. A. Filonovich, P. Alpuim (Universidade do Minho, Campus de Azurem, Portugal), A. Rolo (Universidade do Minho, Campus de Gualtar, Portugal) |
Page | pp. 111 - 112 |
Title | Internal Photoemission Study on Charge Trapping Behavior in Rapid Thermal Oxides on Strained-Si/SiGe Heterolayers |
Author | Milan Kumar Bera (City Univ. of Hong Kong, Hong Kong), Chandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), Sekhar Bhattacharya (Queen's Univ. of Belfast, Great Britain), Chinmay K. Maiti (Indian Inst. of Tech., Kharagpur, India) |
Page | pp. 113 - 114 |
Title | New Fabrication of Strained Si/Si1-yGey Dual Channel on Relaxed Si1-xGex Virtual Substrate Using Ge Rich layer Formed by Oxidation |
Author | Sang-Hoon Kim, Hyun-Cheol Bae, Sang-Heung Lee (Electronics and Telecommunications Research Institute, Republic of Korea) |
Page | pp. 115 - 116 |
Title | Low Temperature Formation of Silicon Nitride Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure |
Author | Mitsutaka Matsumoto, Youhei Inayoshi, Maki Suemitsu (Tohoku Univ., Japan), Eiji Miyamoto, Takuya Yara, Setsuo Nakajima, Tsuyoshi Uehara (Sekisui Chemicals Co. Ltd, Japan), Yasutake Toyoshima (Energy Technology Research Institute, Japan) |
Page | pp. 117 - 118 |
Title | Formation of Relaxed SiGe on the Buffer Consists of Modified SiGe Islands by Si Pre-intermixing |
Author | Pang Shiu Chen (Minghsin Univ. of Science and Tech., Taiwan), S. W. Lee (National Central Univ., Taiwan), M. H Lee (National Taiwan Normal Univ., Taiwan), C. W. Liu (National Taiwan Univ., Taiwan) |
Page | pp. 119 - 120 |
Title | Domain Structure of InSb Films Grown on Si(111) Substrate |
Author | Kazunori Murata, Norsuryati Binti Ahmad, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama, Japan) |
Page | pp. 121 - 122 |
Title | Clarification of Band Structure at Metal-diamond Contact Using Device Simulation |
Author | Tomoaki Masuzawa, Yoshifumi Shiraki, Yuki Kudo (International Christian Univ., Japan), Ichitaro Saito (Univ. of Cambridge, Great Britain), Hisato Yamaguchi (International Christian Univ., Japan), Takatoshi Yamada (National Institute of Advanced Industrial Science And Technology, Japan), Ken Okano (International Christian Univ., Japan) |
Page | pp. 123 - 124 |
Title | SR-PES Observation of Metastable Chemisorption State of Oxygen on Si(110)-16x2 Surface |
Author | Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Satoshi Hasegawa, Takuya Nakano, Seiichi Goto (Tohoku Univ., Japan), Yuden Teraoka, Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan) |
Page | pp. 125 - 126 |
Title | Interface Characterization and Current Conduction in HfO2-Gated MOS Capacitors |
Author | H. W. Chen, S. Y. Chen, H. S. Haung (National Taipei Univ. of Tech., Taiwan), F. C. Chiu, C. H. Liu (Ming Chuan Univ., Taiwan), L. W. Cheng, C. T. Lin, G. H. Ma (Central R&D Division, United Microelectronics Corp. (UMC), Taiwan), P. C. Juan (Mingchi Univ. of Tech., Taiwan), H. L. Hwang (National Tsing Hua Univ., Taiwan) |
Page | pp. 127 - 128 |
Title | Infrared Study of Tris(dimethylamino)silane (TDMAS) Adsorption and Ozone Irradiation on Si(100) for Atomic Layer Deposition of SiO2 |
Author | Fumihiko Hirose, Yuta Kinoshita (Yamagata Univ., Japan), Hironobu Miya (Hitachi Kokusai Electric Inc., Japan), Kazuhiro Hirahara (Shin-Etsu Chemical Co., Japan), Yasuo Kimura, Michio Niwano (Tohoku Univ., Japan) |
Page | pp. 129 - 130 |
Title | Infrared Study of Tetrakis(ethylmethylamino)hafnium (TEMAH) Adsorption and Ozone Irradiation for Atomic Layer Deposition of HfO2 |
Author | Hironobu Miya (Hitachi Kokusai Electric Inc., Japan), Fumihiko Hirose, Yuta Kinoshita (Yamagata Univ., Japan), Kazuhiro Hirahara (Shin-Etsu Chemical Co., Japan), Yasuo Kimura, Michio Niwano (Tohoku Univ., Japan) |
Page | pp. 131 - 132 |
Title | Molecular Dynamics Study of Oxidation Process with SiO Emission in the Si/SiO2 Interface |
Author | Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta (Fujitsu Laboratories Limited, Japan) |
Page | pp. 133 - 134 |
Title | “Temperature Oscillation” as a Real-Time Monitoring of the Growth of 3C-SiC on Si Substrate |
Author | Eiji Saito, Atsushi Konno, Takashi Ito (Tohoku Univ., Japan), Kanji Yasui (Nagaoka Univ. of Tech., Japan), Hideki Nakazawa (Hirosaki Univ., Japan), Tetsuo Endoh (Tohoku Univ., Japan), Yuzuru Narita (Kyushu Inst. of Tech., Japan), Maki Suemitsu (Tohoku Univ., Japan) |
Page | pp. 135 - 136 |
Title | Low Temperature Selective Epitaxial Growth of SiGe Layers Using Various Dielectric Mask Patterns and Process Conditions |
Author | A-Ram Choi, Sang-Sik Choi (Chonbuk National Univ., Republic of Korea), Jin-Tae Kim, Deok-Ho Cho, Tae-Hyun Han (AUK Corp., Republic of Korea), Kyu-Hwan Shim (Chonbuk National Univ., Republic of Korea) |
Page | pp. 137 - 138 |
Title | Characterization of the Soft-X-ray Detectors Fabricated with High-quality CVD Diamond Thin-films |
Author | Yoko Iwakaji, Masayuki Kanasugi, Osamu Maida (Osaka Univ., Japan), Yukiharu Takeda, Yuji Saitoh (Japan Atomic Energy Agency, Japan), Toshimichi Ito (Osaka Univ., Japan) |
Page | pp. 139 - 140 |
Title | Electronic Structure and Junction Property of Hetero-epitaxial CVD Diamond on Ir(001) |
Author | Naoki Amano, Hiroshi Kawata, Tadahiko Goto, Shozo Kono (Tohoku Univ., Japan) |
Page | p. 141 |
Title | Crystalline Quality Improvements of the Homoepitaxial CVD Diamond Films on the Vicinal Substrates |
Author | Osamu Maida, Hidetaka Miyatake (Osaka Univ., Japan), Tokuyuki Teraji (National Inst. for Materials Science, Japan), Toshimichi Ito (Osaka Univ., Japan) |
Page | pp. 143 - 144 |
Title | Characterization of Phosphor-Doped Homoepitaxial (100) Diamond Films Grown Using High-Power-Density MWPCVD Method with Conventional Quartz-Tube Chamber |
Author | Takahiro Nakai, Osamu Maida, Toshimichi Ito (Osaka Univ., Japan) |
Page | pp. 145 - 146 |
Title | In-Situ TEM Observation of Silicide Formation and Dopant Segregation in Ni Fully Silicided Gates |
Author | Takuji Hosoi, Kentaro Shibahara (Hiroshima Univ., Japan), Minghui Song, Kazuo Furuya (NIMS, Japan) |
Page | pp. 147 - 148 |
Title | Diffusion Control of Soft-X-Ray-Excited Carriers in High-Quality CVD Diamond Layers to the HPHT Substrate |
Author | Masayuki Kanasugi, Yoko Iwakaji, Takashi Yamamoto, Osamu Maida (Osaka Univ., Japan), Yukiharu Takeda, Yuji Saitoh (Japan Atomic Energy Agency, Japan), Toshimichi Ito (Osaka Univ., Japan) |
Page | pp. 149 - 150 |
Title | Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition |
Author | Hiroki Tanno, Masao Sakuraba (Tohoku Univ., Japan), Bernd Tillack (IHP, Germany), Junichi Murota (Tohoku Univ., Japan) |
Page | pp. 151 - 152 |
Title | Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si1-xGex/Si(100) Heterostructure |
Author | Takahiro Seo, Masao Sakuraba, Junichi Murota (Tohoku Univ., Japan) |
Page | pp. 153 - 154 |
Title | Modified Growth of Ge Quantum Dots Using C2H4 and SiCH6 Mediation by Ultra-high Vacuum Chemical Vapor Deposition |
Author | Sheng-Wei Lee (National Central Univ., Taiwan), Pang-Shiu Chen (Minghsin Univ. of Science and Tech., Taiwan), Min-Hung Lee (National Taiwan Normal Univ., Taiwan), Chee-Wee Liu (National Taiwan Univ., Taiwan) |
Page | pp. 155 - 156 |
Title | Fabrication and Kinetics Investigation of Vertically Aligned Si Nanowires on (111)Si Substrate |
Author | S. L. Cheng, Y. H. Chang, C. H. Chung (National Central Univ., Taiwan) |
Page | pp. 157 - 158 |
Title | Room Temperature Growth of Crystalline Si Thin Films on Nano-Scaled Substrates Using DC Magnetron Sputtering Deposition Method |
Author | Harunaka Yamaguchi, Osamu Maida, Toshimichi Ito (Osaka Univ., Japan) |
Page | pp. 159 - 160 |
Title | Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System |
Author | Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota (Res. Inst. Electr. Comm., Tohoku Univ., Japan), Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa (Hitachi Kokusai Electric Inc., Japan) |
Page | pp. 161 - 162 |
Title | Air Exposing Impact between Plasma Nitridation and Postnitridation Annealing on Fabrication of HfSiON Thin Film |
Author | Sadayoshi Horii (Hitachi Kokusai Electric Inc., Japan), Dai Ishikawa (Semiconductor Leading Edge Technologies Inc, Japan), Atsushi Sano (Hitachi Kokusai Electric Inc., Japan), Satoshi Kamiyama, Takayuki Aoyama, Yasuo Nara (Semiconductor Leading Edge Technologies Inc, Japan) |
Page | pp. 163 - 164 |
Title | Preparation of Thin TiNx Film and Its Application to Extremely Thin Diffusion Barrier Without Intermixing Interface Layer |
Author | Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech., Japan), Y. Hayasaka, E. Aoyagi (Tohoku Univ., Japan), Atsushi Noya (Kitami Inst. of Tech., Japan) |
Page | pp. 165 - 166 |
Title | Studies on Dielectric Relaxation and Defect Generation for Reliability Assessments in Ultrathin High-k Gate Dielectrics on Ge |
Author | Chandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), Milan Kumar Bera (City Univ. of Hong Kong, Hong Kong), Prabir Kumar Bose (Jadavpur Univ., Jadavpur, Kolkata, India), C. K. Maiti (Indian Inst. of Tech., Kharagpur, India) |
Page | pp. 167 - 168 |
Title | Electrical Characterization and Carrier Transportation in Hf-silicate Dielectric Using ALD Gate Stacks for 90 nm Node MOSFETs |
Author | H.W. Chen, K. C. Chen, S. Y. Chen, H. S. Haung (National Taipei Univ. of Tech., Taiwan), C. H. Liu, F. C. Chiu (Ming Chuan Univ., Taiwan), L. W. Cheng, C. T. Lin, G. H. Ma (Central R&D Division, United Microelectronics Corp. (UMC), Taiwan) |
Page | pp. 169 - 170 |
Title | Effect of In and Sb Mono-layers to Form Rotated InSb Films on Si(111) Substrate |
Author | Mitsufumi Saito, Masayuki Mori, Koichi Maezawa (Univ. of Toyama, Japan) |
Page | pp. 171 - 172 |
Title | Grain Boundaries Stuffed Ru Film for Advanced Cu Diffusion Barrier |
Author | Dung-Ching Perng, Jia-Bin Yeh, Kuo-Chung Hsu (National Cheng Kung Univ., Taiwan) |
Page | pp. 173 - 174 |
Title | Effect of Electrical Degenerated Layer on the Carrier Transport Property of ZnO Thin Films on YSZ substrate |
Author | Shinya Sakamoto, Takeshi Oshio, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura (Osaka Prefecture Univ., Japan) |
Page | pp. 175 - 176 |
Title | Dielectric Properties of Ferroelectric/DMS Heterointerface Using YMnO3 and Ce Doped Si |
Author | Daisuke Shindo, Takeshi Yoshimura, Norifumi Fujimura (Osaka Prefecture Univ., Japan) |
Page | pp. 177 - 178 |
Title | LEED and AFM Study of Cl-terminated Ge(111) Surfaces after HCl Dipping |
Author | Kazufumi Yoneda, Junichi Uchikoshi, Mizuho Morita, Kenta Arima (Osaka Univ., Japan) |
Page | pp. 179 - 180 |
Title | Evaluation of Effective Work Function in Ru/HfSiON/SiO2 Gate Stack Structures – Thickness Dependence in Bottom SiO2 layer |
Author | Hiromichi Yoshinaga, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Selete, Japan) |
Page | pp. 181 - 182 |
Title | Low Temperature Oxidation of SiGe by Liquid-Phase Deposition |
Author | Yu-Hung Chen, Chung-Yuan Kung (National Chung Hsing Univ., Taiwan), Jun-Dar Hwang, Hung-Yu Lin, Hsuan-Jung Chan (Da-Yeh Univ., Taiwan) |
Page | pp. 183 - 184 |
Title | Surface Passivation of InGaP/GaAs HBT Using Silicon Nitride Film Deposited by ECR-CVD Plasma |
Author | Leandro Tiago Manera, Leonardo Breseghello Zoccal, José Alexandre Diniz, Peter J. Tatsch, Ioshiaki Doi (State Univ. of Campinas, Brazil) |
Page | pp. 185 - 186 |
Title | Selective Vapor Phase Etching of SiGe by HCl in a RPCVD Reactor |
Author | Yuji Yamamoto, Klaus Köpke, Rainer Kurps, Bernd Tillack (IHP, Germany) |
Page | pp. 187 - 188 |
Title | Characterization of the Low Temperature Dopant Activation Behavior at NiSi/Silicon Interface Formed by Implant Into Silicide Method |
Author | Kow-Ming Chang, Jian-Hong Lin, Cheng-Yen Sun (National Chiao Tung Univ., Taiwan) |
Page | pp. 189 - 190 |
Title | Characterization of the Low Temperature Activated N+/P Junction Formed by Implant Into Silicide Method |
Author | Kow-Ming Chang, Jian-Hong Lin, Chih-Hsiang Yang (National Chiao Tung Univ., Taiwan) |
Page | pp. 191 - 192 |
Title | The Effects of Plasma Treatment on the Thermal Stability of HfO2 Thin Films |
Author | Kwo-Ming Chang, Bwo-Ning Chen, Shih-Ming Huang (National Chiao Tung Univ., Taiwan) |
Page | pp. 193 - 194 |
Title | Controlling the Strain of SiGe Virtual Substrate by Incorporating Boron (B) into the Underlying Si Layer |
Author | Wu-Ping Huang, Ke-Yao Wang (National Taiwan Univ., Taiwan), Wei-Shi Tan (Nanjing Univ. of Science and Tech., China), Hung-Hsiang Cheng (National Taiwan Univ., Taiwan) |
Page | pp. 195 - 196 |
Title | Design and Optimization of Embedded SiGe Source/Drain pMOSFETs |
Author | Tapas Maiti (Indian Inst. of Tech., Kharagpur, India), Arup Saha (Synopsys (India) Pvt. Ltd., India), Chinmay Maiti (Indian Inst. of Tech., Kharagpur, India) |
Page | pp. 197 - 198 |
Title | Low-Temperature Source/Drain Contact Formation Using Silicidation Induced Activation of Implanted Impurities |
Author | Tanemasa Asano, Masahiko Esaki, Gou Nakagawa (Kyushu Univ., Japan) |
Page | pp. 199 - 200 |
Title | Effects of High-Concentration Phosphorus-Doping on Crystal Quality and Lattice Strain in SiGe HBTs |
Author | Katsuya Oda, Makoto Miura (Central Research Laboratory, Hitachi Ltd., Japan), Hiromi Shimamoto (Renesas Northern Japan Semiconductor, Inc., Japan), Katsuyoshi Washio (Central Research Laboratory, Hitachi Ltd., Japan) |
Page | pp. 201 - 202 |
Title | Short Channel Effect Improved Strained-Si:C-Source/Drain PMOSFETs |
Author | M. H. Lee (National Taiwan Normal Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan), S. Maikap (Chang Gung Univ., Taiwan), K.-W. Shen (National Taiwan Normal Univ., Taiwan), W.-C. Wang (National Chung Hsing Univ., Taiwan) |
Page | pp. 203 - 204 |
Title | Si/SiGe/Si Quantum Well Schottky Barrier Diodes |
Author | Ping-Sheng Kuo, C. -H. Lin, C. -Y. Peng, Y. -C. Fu, C. W. Liu (National Taiwan Univ., Taiwan) |
Page | pp. 205 - 206 |
Title | The Switch of the Worst Case on NBTI and Hot Carrier Reliability for 0.13 µm PMOSFETs |
Author | Chia-Hao Tu, Shuang-Yuan Chen, Meng-Hong Lin, Zhen-Ying Hsieh (National Taipei Univ. of Tech., Taiwan), Mu-Chun Wang (Minghsin Univ. of Science and Tech., Taiwan), Ssu-Han Wu, Sam Jhou, Joe Ko (Special Technology Division, United Microelectronics Corp., Taiwan), Heng Sheng Haung (National Taipei Univ. of Tech., Taiwan) |
Page | pp. 207 - 208 |
Title | Valence Subband Properties of Strained Si1-xCx Alloys in PMOS Inversion Layer |
Author | Shu-Tong Chang, Jun Wei Fan, Chung-Yi Lin (National Chung Hsing Univ., Taiwan) |
Page | pp. 209 - 210 |
Title | Comparison Study about Low Frequency Noise and Hot-carrier Reliability of SiGe PD-SOI pMOSFETs |
Author | Sang-Sik Choi, A-Ram Choi, Jeon-Wook Yang (Chonbuk National Univ., Republic of Korea), Yong-Woo Hwang, Deok-Ho Cho (AUK, Republic of Korea), Kyu-Hwan Shim (Chonbuk National Univ., Republic of Korea) |
Page | pp. 211 - 212 |
Title | Leakage Current and Paramagnetic Defects in SiCN Dielectrics for Copper Diffusion Barrier |
Author | Kiyoteru Kobayashi, Hisashi Yokoyama, Masato Endoh, Satoshi Hosaka, Mitsuo Kato (Tokai Univ., Japan) |
Page | pp. 213 - 214 |
Wednesday, November 14, 2007 |
Title | Impact of Low Temperature Anneal on Effective Work Function and Chemical Bonding Features for Ru/HfSiON/SiON Gate Stack |
Author | Akio Ohta, Hiromichi Yoshinaga, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Semiconductor Leading Edge technologies, Inc., Japan) |
Page | pp. 215 - 216 |
Title | Band Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS |
Author | Kuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan) |
Page | pp. 217 - 218 |
Title | Counter-Dipole Formation at TaCX/HfO2 and HfCX/HfO2 Interfaces Compensating HfO2/SiO2 Dipole-induced VFB Shift in MeCX/HfO2/SiO2/Si Structures |
Author | Wataru Mizubayashi (MIRAI-ASRC, AIST, Japan), Koji Akiyama (MIRAI-ASET, Japan), Wenwu Wang (MIRAI-ASRC, AIST, Japan), Minoru Ikeda, Kunihiko Iwamoto, Yuuichi Kamimuta, Akito Hirano (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 219 - 220 |
Title | Role of Oxygen Vacancy in HfO2 and Al2O3 Dielectrics on Effective Workfunction Shifts Using HfxRu1-x Gates |
Author | Yu Nunoshige (Shibaura Inst. of Tech., Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan) |
Page | pp. 221 - 222 |
Title | Structural Optimization of HfTiSiO High-k Gate Dielectrics by Utilizing In-Situ PVD-Based Fabrication Method |
Author | Hiroaki Arimura, Shinya Horie (Osaka Univ., Japan), Takashi Minami, Naomu Kitano, Motomu Kosuda (Canon ANELVA Corp., Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan) |
Page | pp. 223 - 224 |
Title | Improving Hafnium Oxide Reliability by Using Plasma Immersion Ion Implantation of Aluminium |
Author | Banani Sen, Bingliang Yang, Hei Wong, C. W. Kok, P.K. Chu, Amping Huang (City Univ. of Hong Kong, Hong Kong) |
Page | pp. 225 - 226 |
Title | The Impact of Post Deposition NH3-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)3 |
Author | Ryo Yougauchi, Akio Ohta, Yuki Munetaka, Hideki Murakami, Seiichirou Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan) |
Page | pp. 227 - 228 |
Title | On the Optimization of SiGe PNP HBT in a High-voltage CBiCMOS Process |
Author | Tatsuya Tominari (Hitachi, Ltd., Japan), Makoto Miura (Central Research Laboratory, Hitachi Ltd., Japan), Mitsuru Arai (Hitachi ULSI Systems Co., Ltd., Japan), Yoshinori Yoshida, Hidenori Sato, Takayuki Aoki (Hitachi, Ltd., Japan), Katsuyoshi Washio (Central Research Laboratory, Hitachi Ltd., Japan), Takashi Hashimoto (Hitachi, Ltd., Japan) |
Page | pp. 229 - 230 |
Title | Fluctuation of Threshold Voltage in Strained Si MOSFETs Induced by Strain Variation in Strained-Si Channels on SGOI Substrates |
Author | Naoharu Sugiyama, Toshinori Numata, Norio Hirashita, Toshifumi Irisawa (MIRAI-ASET, Japan), Shin-ichi Takagi (Univ. of Tokyo, Japan) |
Page | pp. 231 - 232 |
Title | Effects of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method |
Author | Sanjeewa Dissanayake, Satoshi Tanabe (Univ. of Tokyo, Japan), Satoshi Sugahara (Tokyo Inst. of Tech., Japan), Mitsuru Takenaka, Shin-ichi Takagi (Univ. of Tokyo, Japan) |
Page | pp. 233 - 234 |
Title | Fabrication of Ge-channel MOSFETs by Using Replacement Gate Process and Selective Epitaxial Growth |
Author | Koichi Terashima, Akihito Tanabe, Takashi Nakagawa, Kaoru Mori, Taeko Ikarashi (NEC Corp., Japan), Junko Nakatsuru, Hiroki Date, Manabu Ikemoto (Canon ANELVA Corp., Japan), Toru Tatsumi (NEC Corp., Japan) |
Page | pp. 235 - 236 |
Title | Source/Drain Engineering for MOSFETs with e-Si:C Technology |
Author | Hiroshi Itokawa, Nobuaki Yasutake, Naoki Kusunoki, Shintaro Okamoto, Nobutoshi Aoki, Ichiro Mizushima (Toshiba Corp., Japan) |
Page | pp. 237 - 238 |
Title | Leakage Current Study of Si1-xCx Embedded Source/Drain Junctions |
Author | Eddy Simoen, Bertrand Vissouvanadin, Mireia Bargallo Gonzalez, Peter Verheyen, Roger Loo, Cor Claeys (IMEC, Belgium), Vladimir Machkaoutsan (ASM Belgium, Belgium), Mathias Bauer, Shawn Thomas (ASM America, United States), Joan-Ping Lu, Rick Wise (Texas Instruments, United States) |
Page | pp. 239 - 240 |
Title | Exploring Width Effect on Performance Enhancement in NMOSFETs with Silicon-Carbon Alloy Stressor and Tensile Stress Silicon Nitride Linear |
Author | Wei–Ching Wang, Shu-Tong Chang, Jacky Huang (National Chung Hsing Univ., Taiwan), Shu-Hui Liao (ChungChou Inst. of Tech., Taiwan), Chung-Yi Lin (National Chung Hsing Univ., Taiwan) |
Page | pp. 241 - 242 |
Title | (Invited Paper) Metal-Diamond Semiconductor Interface and Photodiode Application |
Author | Yasuo Koide (National Institute for Materials Science (NIMS), Japan) |
Page | pp. 243 - 244 |
Title | (Invited Paper) Surface, Interface and Doping Science of Diamond and FET Applications |
Author | Hiroshi Kawarada (Waseda Univ., Japan) |
Page | pp. 245 - 246 |
Title | (Invited Paper) The Present Status and Future of SiC Processes |
Author | Kenji Fukuda (Power Electronics Research Center, AIST, Japan) |
Page | pp. 247 - 248 |
Title | (Invited Paper) Control of High-k / Germanium Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilization |
Author | Koji Kita, Toshitake Takahashi, Hideyuki Nomura, Sho Suzuki, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 249 - 250 |
Title | (Invited Paper) Opportunities and Challenges for High-k/III-V Integration |
Author | Peide D. Ye (Purdue Univ., United States) |
Page | pp. 251 - 252 |
Title | (Invited Paper) High-k/Metal Gate Stack for Advanced CMOS Technology |
Author | Yasuo Nara (Selete, Japan) |
Page | pp. 253 - 254 |