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Fifth International Symposium on Control of Semiconductor Interfaces
Technical Program


Technical Program:   One Page (Not Separated) version
Author Index:   HERE

Session Schedule


Monday, November 12, 2007

C1 (RoomA)
Opening Address

9:50 - 10:00
K (RoomA)
Keynote Speech

10:00 - 11:20
Coffee Break
11:20 - 11:35
I1 (RoomA)
Invited Session: Device

11:35 - 13:15
Lunch
13:15 - 14:40
I2 (RoomA)
Invited Session: Source/Drain and Base Engineering

14:40 - 15:55
Coffee Break
15:55 - 16:10
I3 (RoomA)
Invited Session: Substrate Engineering

16:10 - 17:25
Banquet (Restaurant)
18:00 - 20:00

Tuesday, November 13, 2007

I4 (RoomA)
Invited Session: Control of Surface, Interface, and Heterostructure

9:00 - 10:40

Coffee Break
10:40 - 10:55
I5 (RoomA)
Invited Session: Optical Properties of SiGe Thin Films and Dots

10:55 - 12:35

Lunch
12:35 - 14:00
OA1 (RoomA)
Growth and Process Technologies

14:00 - 15:30
OB1 (RoomB)
Diamond Devices and Device-Oriented Characterizaion

14:00 - 15:30
Coffee Break
15:30 - 15:45
OA2 (RoomA)
Surface and Interface Control for Gate Stacks

15:45 - 17:15
OB2 (RoomB)
Nanostructures

15:45 - 17:15
Intermission
17:15 - 17:30
P (RoomC)
Poster Session

17:30 - 19:30


Wednesday, November 14, 2007

OA3 (RoomA)
High-k Gate Stacks

9:00 - 10:45
OB3 (RoomB)
Si/Ge-based Transistors

9:00 - 10:45
Coffee Break
10:45 - 11:10
I6 (RoomA)
Invited Session: Diamond and C-Related Film Formation and Its Applications

11:10 - 12:25

Lunch
12:25 - 14:00
I7 (RoomA)
Invited Session: High-k Materials on Semiconductors

14:00 - 15:15

C2 (RoomA)
Closing

15:15 - 15:30




List of Papers



Monday, November 12, 2007

Session C1  Opening Address
Time: 9:50 - 10:00 Monday, November 12, 2007
Location: RoomA
Chairs: J. Murota (Tohoku Univ., Japan), S. Zaima (Nagoya Univ., Japan)


Session K  Keynote Speech
Time: 10:00 - 11:20 Monday, November 12, 2007
Location: RoomA
Chairs: J. Murota (Tohoku Univ., Japan), S. Zaima (Nagoya Univ., Japan)

K-1 (Time: 10:00 - 10:40)
Title(Keynote Address) Prospects for Future ULSI Technology
AuthorMasataka Hirose (National Institure of Advanced Industrial Science and Technology, Japan)
Pagepp. 1 - 2

K-2 (Time: 10:40 - 11:20)
Title(Keynote Address) Current Topics of SiGe Heterodevices
AuthorE. Kasper (Univ. Stuttgart, Germany)
Pagepp. 3 - 4


Session I1  Invited Session: Device
Time: 11:35 - 13:15 Monday, November 12, 2007
Location: RoomA
Chairs: Y. Mochizuki (NEC, Japan), K. Washio (Hitachi, Japan)

I1-1 (Time: 11:35 - 12:00)
Title(Invited Paper) Ballistic Transport in Nanoscale Transistor
AuthorKenji Natori (Univ. of Tsukuba, Japan)
Pagepp. 5 - 6

I1-2 (Time: 12:00 - 12:25)
Title(Invited Paper) A New Strain-Transfer Concept to Exploit Lattice Interactions at Semiconductor Interfaces for Strain Engineering in Transistors
AuthorYee-Chia Yeo (National Univ. of Singapore, Singapore)
Pagepp. 7 - 8

I1-3 (Time: 12:25 - 12:50)
Title(Invited Paper) Charge Transport in Boron-Doped Nano MOSFETs: Towards Single-Dopant Electronics
AuthorYukinori Ono, Mohammed Khalafalla, Katsuhiko Nishiguchi, Kei Takashina, Akira Fujiwara (NTT, Japan), Seiji Horiguchi (Akita Univ., Japan), Hiroshi Inokawa (Shizuoka Univ., Japan), Yasuo Takahashi (Hokkaido Univ., Japan)
Pagepp. 9 - 10

I1-4 (Time: 12:50 - 13:15)
Title(Invited Paper) Si Single-Electron Devices: Interaction with Individual Dopants and Photons
AuthorMichiharu Tabe, Ratno Nuryadi, Daniel Moraru, Zainal Arif Burhanudin, Hiroya Ikeda (Shizuoka Univ., Japan)
Pagepp. 11 - 12


Session I2  Invited Session: Source/Drain and Base Engineering
Time: 14:40 - 15:55 Monday, November 12, 2007
Location: RoomA
Chairs: M. Caymax (IMEC, Belgium), N. Sugii (Hitachi, Japan)

I2-1 (Time: 14:40 - 15:05)
Title(Invited Paper) Base Doping and Dopant Profile Control of SiGe NPN and PNP HBTs
AuthorBernd Tillack, Bernd Heinemann, Dieter Knoll, Holger Rucker, Yuji Yamamoto (IHP, Germany)
Pagepp. 13 - 14

I2-2 (Time: 15:05 - 15:30)
Title(Invited Paper) Interface Control in Dopant-Segregated Schottky Source/Drain Technology for Future CMOS
AuthorJunji Koga, Atsuhiro Kinoshita, Takashi Yamauchi (Toshiba Corp., Japan)
Pagepp. 15 - 16

I2-3 (Time: 15:30 - 15:55)
Title(Invited Paper) 45nm CMOS Technology by SiGe Low Temperature Selective Epitaxial Technique
AuthorNaoyoshi Tamura, Yousuke Shimamune (Fujitsu Laboratories Ltd., Japan)
Pagepp. 17 - 18


Session I3  Invited Session: Substrate Engineering
Time: 16:10 - 17:25 Monday, November 12, 2007
Location: RoomA
Chairs: A. Sakai (Osaka Univ., Japan), N. Sugiyama (MIRAI-ASET, Japan)

I3-1 (Time: 16:10 - 16:35)
Title(Invited Paper) Progress in III-V Material Integration with Si Substrates and Si Processing for III-V FET and Optoelectronic Integration
AuthorE.A. Fitzgerald, L. Yang, C. Dohrman, K. Chilukuri, S. Gupta, C. Cheng (MIT, United States)
Pagepp. 19 - 20

I3-2 (Time: 16:35 - 17:00)
Title(Invited Paper) Reduced Self-Heating by Strained Silicon Substrate Engineering
AuthorAnthony O'Neill (Newcastle Univ., Great Britain)
Pagepp. 21 - 22

I3-3 (Time: 17:00 - 17:25)
Title(Invited Paper) On True Silicon-on-nothing MOSFETs: Fabrication by Si Layer Transfer over the Pre-defined Cavity and Electrical Characterization
AuthorValeriya Kilchytska (Université catholique de Louvain, Microelectronics Lab., Belgium), Tsung Ming Chung, Benoit Olbrechts (Université catholique de Louvain, Microwave Lab., Belgium), Yaroslav Vovk (Institute of Semiconductor Physics, Ukraine), Denis Flandre (Université catholique de Louvain, Microelectronics Lab., Belgium), Jean-Pierre Raskin (Université catholique de Louvain, Microwave Lab., Belgium)
Pagepp. 23 - 24



Tuesday, November 13, 2007

Session I4  Invited Session: Control of Surface, Interface, and Heterostructure
Time: 9:00 - 10:40 Tuesday, November 13, 2007
Location: RoomA
Chairs: B. Tillack (IHP, Germany), A. O'Neill (Newcastle Univ., Great Britain)

I4-1 (Time: 9:00 - 9:25)
Title(Invited Paper) Interface Control of High k Gate Dielectrics and Ge
AuthorMatty Caymax, Michel Houssa, Geoffrey Pourtois, Florence Bellenger, Koen Martens, Annelies Delabie, Sven Van Elshocht (IMEC, Belgium)
Pagepp. 25 - 26

I4-2 (Time: 9:25 - 9:50)
Title(Invited Paper) Low Temperature SiGe Films Formation with NFH Radical Precleaning
AuthorMichio Ishikawa, Eiichi Mizuno (Institute for Semiconductor Technologies, ULVAC, Inc., Japan), Seiichi Takahashi, Akira Jinzu (Semiconductor Division2, ULVAC, Inc., Japan)
Pagepp. 27 - 28

I4-3 (Time: 9:50 - 10:15)
Title(Invited Paper) Si(Ge):Mn Based Materials for Spintronic Applications
AuthorV. Le Thanh, L. Michez, S. Olive-Mendez, A. Barski, J. Derrien (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille, France)
Pagepp. 29 - 30

I4-4 (Time: 10:15 - 10:40)
Title(Invited Paper) Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures
AuthorAkira Sakai (Osaka Univ., Japan), Shotaro Takeuchi, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 31 - 32


Session I5  Invited Session: Optical Properties of SiGe Thin Films and Dots
Time: 10:55 - 12:35 Tuesday, November 13, 2007
Location: RoomA
Chairs: S. Chiussi (Universidade de Vigo, Spain), V. Le Thanh (Univ. of Aix-Marseille, France)

I5-1 (Time: 10:55 - 11:20)
Title(Invited Paper) Optical and Electrical Evaluations of Defects in SiGe Thin Layer
AuthorHiroshi Nakashima, Dong Wang (Kyushu Univ., Japan)
Pagepp. 33 - 34

I5-2 (Time: 11:20 - 11:45)
Title(Invited Paper) Si Nano-photodiode with a Surface-Plasmon Antenna
AuthorJunichi Fujikata, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi (NEC Corp., Japan)
Pagepp. 35 - 36

I5-3 (Time: 11:45 - 12:10)
Title(Invited Paper) Luminescence of β-FeSi2 and Application to Photonics
AuthorYoshihito Maeda (Kyoto Univ., Japan)
Pagepp. 37 - 38

I5-4 (Time: 12:10 - 12:35)
Title(Invited Paper) MBE Growth of SiGe with High Ge Content for Optical Applications
AuthorMichael Oehme, Jens Werner, Olaf Kirfel, Erich Kasper (Univ. Stuttgart, Germany)
Pagepp. 39 - 40


Session OA1  Growth and Process Technologies
Time: 14:00 - 15:30 Tuesday, November 13, 2007
Location: RoomA
Chairs: R. Loo (IMEC, Belgium), H. Nakashima (Kyushu Univ., Japan)

OA1-1 (Time: 14:00 - 14:15)
TitleCharacterization of Local Strains in Si1-xGex Hetero-mesa Structures on Si(001) Substrates by Using X-ray Microdiffraction
AuthorOsamu Nakatsuka, Katsunori Yukawa, Shogo Mochizuki (Nagoya Univ., Japan), Akira Sakai (Osaka Univ., Japan), Kazunori Fukuda, Shigeru Kimura, Osami Sakata (Japan Synchrotron Radiation Research Institute, Japan), Koji Izunome, Takeshi Senda, Eiji Toyoda (Covalent Materials Corp., Japan), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 41 - 42

OA1-2 (Time: 14:15 - 14:30)
TitleStrain Reduction in Heavily Arsenic Doped SiGe
AuthorGaël Borot, Laurent Rubaldo (STMicroelectronics, France), Xavier Mescot, Martine Gri, Gérard Ghibaudo (IMEP, INPG, France), Didier Dutartre (STMicroelectronics, France)
Pagepp. 43 - 44

OA1-3 (Time: 14:30 - 14:45)
TitleCarrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition
AuthorCheng-Han Lee, C. -Y. Yu, C. M. Lin (National Taiwan Univ., Taiwan), H. Lin, W. -H. Chang (National Chiao Tung Univ., Taiwan), C. W. Liu (National Taiwan Univ., Taiwan)
Pagepp. 45 - 46

OA1-4 (Time: 14:45 - 15:00)
TitleLow-Temperature Chemical Vapor Deposition of Highly-Doped n-Type Si at High Growth Rate
AuthorNgoc Duy Nguyen, Roger Loo, Matty Caymax (IMEC, Belgium)
Pagepp. 47 - 48

OA1-5 (Time: 15:00 - 15:15)
TitleRole of UV Irradiation during Si Etching Process in Chlorine Plasma
AuthorButsurin Jinnai (Tohoku Univ., Japan), Fumihiko Oda, Yukihiro Morimoto (R&D Center, Ushio Inc., Japan), Seiji Samukawa (Tohoku Univ., Japan)
Pagepp. 49 - 50

OA1-6 (Time: 15:15 - 15:30)
TitleHigh Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films
AuthorHirotaka Kaku, Seiichiro Higashi, Hirokazu Furukawa, Tatsuya Okada, Takuya Yorimoto, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ., Japan)
Pagepp. 51 - 52


Session OB1  Diamond Devices and Device-Oriented Characterizaion
Time: 14:00 - 15:30 Tuesday, November 13, 2007
Location: RoomB
Chairs: Y. Koide (NIMS, Japan), M. Oehme (Univ. of Stuttgart, Germany)

OB1-1 (Time: 14:00 - 14:15)
TitleBias Dependence of RF Performance and Small-signal Equivalent Circuit in Diamond MISFETs
AuthorKazuyuki Hirama, Yoshikatsu Jingu, Hidenori Takayanagi, Keiichiro Yohara (Waseda Univ., Japan), Hitoshi Umezawa (AIST, Japan), Hiroshi Kawarada (Waseda Univ., Japan)
Pagepp. 53 - 54

OB1-2 (Time: 14:15 - 14:30)
TitleImages and Energy Distributions of Electrons Emitted from a Diamond pn-Junction Diode
AuthorShozo Kono (Tohoku Univ., Japan), Satoshi Koizumi (NIMS, Japan)
Pagepp. 55 - 56

OB1-3 (Time: 14:30 - 14:45)
TitleNew Physical Model to Explain Logarithmic Time Dependence of Data Retention in Flash EEPROM
AuthorShiro Kamohara, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan)
Pagepp. 57 - 58

OB1-4 (Time: 14:45 - 15:00)
TitleQuantum Cascade Multi-Electron Injection into Si-Quantum-Dot Floating Gate Embedded in SiO2 Matrix
AuthorYukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba, Japan)
Pagepp. 59 - 60

OB1-5 (Time: 15:00 - 15:15)
TitleElectroabsorption of Oxidized SiGe
AuthorJun Igarashi, Kiyoshi Kawamoto, S. Fukatsu (Univ. of Tokyo, Japan)
Pagepp. 61 - 62

OB1-6 (Time: 15:15 - 15:30)
TitleC-V Characterization of Schottky- and MIS-gate SiGe/Si HEMT Structures
AuthorNorio Onojima, Akihumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (National Institute of Information and Communications Technology, Japan)
Pagepp. 63 - 64


Session OA2  Surface and Interface Control for Gate Stacks
Time: 15:45 - 17:15 Tuesday, November 13, 2007
Location: RoomA
Chairs: A. Toriumi (Univ. of Tokyo, Japan), M. Suemitsu (Tohoku Univ., Japan)

OA2-1 (Time: 15:45 - 16:00)
TitleSuperior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation
AuthorShin-ichi Takagi, Hiroshi Matsubara, Masashi Nishikawa, Takashi Sasada, Ryosho Nakane (Univ. of Tokyo, Japan), Satoshi Sugahara (Tokyo Inst. of Tech., Japan), Mitsuru Takenaka (Univ. of Tokyo, Japan)
Pagepp. 65 - 66

OA2-2 (Time: 16:00 - 16:15)
TitleControl of Fermi-Level Pinning at Metal/Germanium Interface by Inserting Ultra-thin Oxides
AuthorTomonori Nishimura, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 67 - 68

OA2-3 (Time: 16:15 - 16:30)
TitleCharacterization of Ge MIS Interfaces with Si Passivation by Conductance Method
AuthorNoriyuki Taoka (MIRAI-ASRC, Japan), Masatomi Harada, Yoshimi Yamashita, Toyoji Yamamoto, Naoharu Sugiyama (MIRAI-ASET, Japan), Shin-ichi Takagi (Univ. of Tokyo, MIRAI-ASRC, Japan)
Pagepp. 69 - 70

OA2-4 (Time: 16:30 - 16:45)
TitleBehavior of N Atoms on Atomic-Order Nitrided Si0.5Ge0.5(100)
AuthorNao Akiyama, Masao Sakuraba (Tohoku Univ., Japan), Bernd Tillack (IHP, Germany), Junichi Murota (Tohoku Univ., Japan)
Pagepp. 71 - 72

OA2-5 (Time: 16:45 - 17:00)
TitleEvaluation of Si3N4/Si Interface by UV Raman Spectroscopy
AuthorTetsuya Yoshida, Kosuke Yamasaki, Daisuke Kosemura, Yasuto Kakemura (Meiji Univ., Japan), Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ., Japan), Atsushi Ogura (Meiji Univ., Japan)
Pagepp. 73 - 74

OA2-6 (Time: 17:00 - 17:15)
TitleDielectric Properties of the Interface between Si and SiO2
AuthorSadakazu Wakui, Jun Nakamura, Akiko Natori (Univ. of Electro-Communications, Japan)
Pagepp. 75 - 76


Session OB2  Nanostructures
Time: 15:45 - 17:15 Tuesday, November 13, 2007
Location: RoomB
Chairs: M. Tabe (Shizuoka Univ., Japan), Y. Ono (NTT, Japan)

OB2-1 (Time: 15:45 - 16:00)
TitleGrowth of Half-Centimeter Long Single- and Double-Walled Carbon Nanotubes by Radical CVD
AuthorTakayuki Iwasaki, Tasuku Maki, Hiroshi Kawarada (Waseda Univ., Japan)
Pagepp. 77 - 78

OB2-2 (Time: 16:00 - 16:15)
TitleMorphology Control of Carbon Nanowalls Using Radical Injection Plasma Enhanced CVD
AuthorShigetoshi Maruyama (Nagoya Univ., Japan), Koji Yamakawa (Katagiri Engineering Co., Ltd., Japan), Hiroyuki Kano (NU Eco Engineering Co., Ltd., Japan), Mineo Hiramatsu (Meijo Univ., Japan), Masaru Hori (Nagoya Univ., Japan)
Pagepp. 79 - 80

OB2-3 (Time: 16:15 - 16:30)
TitleSelf-Assembling of Negative Islands during The Evolution of Three-Dimensional Microstructures in Photo-Excited Ge Homoepitaxy
AuthorHousei Akazawa (NTT, Japan)
Pagepp. 81 - 82

OB2-4 (Time: 16:30 - 16:45)
TitleArtificially-Positioned Ge Dot Array Formed by Sputter Epitaxy
AuthorYoshiyuki Suda, Yoichi Takahashi , Makoto Hirata, Hiroaki Hanafusa, Hiroyuki Ohashi (Tokyo Univ. of Agric. and Technol., Japan), Nobumitsu Hirose, Toshiaki Matsui (National Institute of Information and Communications Technology, Japan)
Pagepp. 83 - 84

OB2-5 (Time: 16:45 - 17:00)
TitleScanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates
AuthorMasahiro Yamazaki, Shotaro Takeuchi, Osamu Nakatsuka (Nagoya Univ., Japan), Akira Sakai (Osaka Univ., Japan), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 85 - 86

OB2-6 (Time: 17:00 - 17:15)
TitleStrain-induced Wrinkling Patterns
AuthorWu-Ping Huang, Alexander I. Fedorchenko, Hung-Hsiang Cheng, An-Bang Wang (National Taiwan Univ., Taiwan)
Pagepp. 87 - 88


Session P  Poster Session
Time: 17:30 - 19:30 Tuesday, November 13, 2007
Location: RoomC

P-1 (Growth and Characterization)
TitleStructural Characterization of SiGe Nanoclusters Formed by Rapid Thermal Annealing
AuthorAlexandre M. P. dos Anjos, Ioshiaki Doi, José A. Diniz (State Univ. of Campinas, Brazil)
Pagepp. 89 - 90

P-2 (Growth and Characterization)
TitleInfluences of Si Pillar Geometry on SiN-Stressor Induced Local Strain
AuthorMasanori Tanaka, Taizoh Sadoh (Kyushu Univ., Japan), Jun Morioka, Tokuhide Kitamura (Toshiba Semiconductor, Japan), Masanobu Miyao (Kyushu Univ., Japan)
Pagepp. 91 - 92

P-3 (Growth and Characterization)
TitleControl of Electronic Properties of HfO2 with Fluorine Doping from First-principles Calculation
AuthorTatsuo Schimizu, Masato Koyama (Toshiba, Japan)
Pagepp. 93 - 94

P-4 (Growth and Characterization)
TitleTheoretical Study of Electron Mobility for Silicon-Caron Alloys
AuthorS. T. Chang, C. Y. Lin, S. H. Liao (National Chung Hsing Univ., Taiwan)
Pagepp. 95 - 96

P-5 (Growth and Characterization)
TitleDiffusion Behavior in Fe3Si/Ge Hybrid Structures and Related Degradation of Axial Orientation
AuthorTakafumi Jonishi (Kyoto Univ., Japan), Yu-chiro Ando (Kyushu Univ., Japan), Kazumasa Narumi (Japan Atomic Energy Agency, Japan), Mamoru Kumano, Koji Udeda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan), Yoshihito Maeda (Kyoto Univ., Japan)
Pagepp. 97 - 98

P-6 (Growth and Characterization)
TitleLow Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge
AuthorKoji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh (Kyushu Univ., Japan), Yoshihito Maeda (Kyoto Univ., Japan), Masanobu Miyao (Kyushu Univ., Japan)
Pagepp. 99 - 100

P-7 (Growth and Characterization)
TitleBreakdown Field of Lateral-type Schottky Diodes of Diamond
AuthorTokuyuki Teraji, Satoshi Koizumi, Yasuo Koide (National Inst. for Materials Science, Japan), Toshimichi Ito (Osaka Univ., Japan)
Pagepp. 101 - 102

P-8 (Growth and Characterization)
TitlePreparation of ZrO2 Ultrathin Films as Gate Dielectrics by Reactive DC Magnetron Sputtering
AuthorYing Zhou, Nobuo Kojima, Kimihiro Sasaki (Kanazawa Univ., Japan)
Pagepp. 103 - 104

P-9 (Growth and Characterization)
TitleEnhanced Growth of Low-Resistivity Cobalt Silicide by Using a Co/Au/Co Trilayer Film on Si0.8Ge0.2 Virtual Substrate
AuthorS. L. Cheng, H. Y. Chen, S. W. Lee (National Central Univ., Taiwan)
Pagepp. 105 - 106

P-10 (Growth and Characterization)
TitleStrained-Si with Carbon Incorporation for MOSFET Source/Drain Engineering
AuthorM. H. Lee (National Taiwan Normal Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan), S. W. Lee (National Central Univ., Taiwan), P. S. Chen (Minghsin Univ. of Science and Tech., Taiwan), K.-W. Shen (National Taiwan Normal Univ., Taiwan), W.-C. Wang (National Chung Hsing Univ., Taiwan)
Pagepp. 107 - 108

P-11 (Growth and Characterization)
TitleGrowth and Modification of Thin a-Si:H/a-Ge:H Bilayers to Sacrificial c-SiGe Alloys Through ArF Excimer Laser Assisted Processing
AuthorStefano Chiussi, F. Gontad, R. Rodriguez (Física Aplicada, E.T.S.I.I., Spain), C. Serra (Universidade de Vigo, Spain), J. Serra, B. Leon (Física Aplicada, E.T.S.I.I., Spain), T. Sulima, L. Höllt, L. Eisele (Universitaet der Bundeswehr Muenchen, Germany)
Pagepp. 109 - 110

P-12 (Growth and Characterization)
TitleModification of Hydrogen Content and Crystallinity in Multi-layer Structures with Alternating Amorphous and Nano-crystalline Silicon Films Through Excimer Laser Assisted Processing
AuthorStefano Chiussi, F. Gontad, P. Gonzalez, B. Leon (Física Aplicada, E.T.S.I.I., Spain), C. Serra (Universidade de Vigo, Spain), S. A. Filonovich, P. Alpuim (Universidade do Minho, Campus de Azurem, Portugal), A. Rolo (Universidade do Minho, Campus de Gualtar, Portugal)
Pagepp. 111 - 112

P-13 (Growth and Characterization)
TitleInternal Photoemission Study on Charge Trapping Behavior in Rapid Thermal Oxides on Strained-Si/SiGe Heterolayers
AuthorMilan Kumar Bera (City Univ. of Hong Kong, Hong Kong), Chandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), Sekhar Bhattacharya (Queen's Univ. of Belfast, Great Britain), Chinmay K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Pagepp. 113 - 114

P-14 (Growth and Characterization)
TitleNew Fabrication of Strained Si/Si1-yGey Dual Channel on Relaxed Si1-xGex Virtual Substrate Using Ge Rich layer Formed by Oxidation
AuthorSang-Hoon Kim, Hyun-Cheol Bae, Sang-Heung Lee (Electronics and Telecommunications Research Institute, Republic of Korea)
Pagepp. 115 - 116

P-15 (Growth and Characterization)
TitleLow Temperature Formation of Silicon Nitride Films Using Pulsed-Plasma CVD under Near Atmospheric Pressure
AuthorMitsutaka Matsumoto, Youhei Inayoshi, Maki Suemitsu (Tohoku Univ., Japan), Eiji Miyamoto, Takuya Yara, Setsuo Nakajima, Tsuyoshi Uehara (Sekisui Chemicals Co. Ltd, Japan), Yasutake Toyoshima (Energy Technology Research Institute, Japan)
Pagepp. 117 - 118

P-16 (Growth and Characterization)
TitleFormation of Relaxed SiGe on the Buffer Consists of Modified SiGe Islands by Si Pre-intermixing
AuthorPang Shiu Chen (Minghsin Univ. of Science and Tech., Taiwan), S. W. Lee (National Central Univ., Taiwan), M. H Lee (National Taiwan Normal Univ., Taiwan), C. W. Liu (National Taiwan Univ., Taiwan)
Pagepp. 119 - 120

P-17 (Growth and Characterization)
TitleDomain Structure of InSb Films Grown on Si(111) Substrate
AuthorKazunori Murata, Norsuryati Binti Ahmad, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama, Japan)
Pagepp. 121 - 122

P-18 (Growth and Characterization)
TitleClarification of Band Structure at Metal-diamond Contact Using Device Simulation
AuthorTomoaki Masuzawa, Yoshifumi Shiraki, Yuki Kudo (International Christian Univ., Japan), Ichitaro Saito (Univ. of Cambridge, Great Britain), Hisato Yamaguchi (International Christian Univ., Japan), Takatoshi Yamada (National Institute of Advanced Industrial Science And Technology, Japan), Ken Okano (International Christian Univ., Japan)
Pagepp. 123 - 124

P-19 (Growth and Characterization)
TitleSR-PES Observation of Metastable Chemisorption State of Oxygen on Si(110)-16x2 Surface
AuthorYoshihisa Yamamoto, Hideaki Togashi, Atsushi Kato, Satoshi Hasegawa, Takuya Nakano, Seiichi Goto (Tohoku Univ., Japan), Yuden Teraoka, Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan)
Pagepp. 125 - 126

P-20 (Growth and Characterization)
TitleInterface Characterization and Current Conduction in HfO2-Gated MOS Capacitors
AuthorH. W. Chen, S. Y. Chen, H. S. Haung (National Taipei Univ. of Tech., Taiwan), F. C. Chiu, C. H. Liu (Ming Chuan Univ., Taiwan), L. W. Cheng, C. T. Lin, G. H. Ma (Central R&D Division, United Microelectronics Corp. (UMC), Taiwan), P. C. Juan (Mingchi Univ. of Tech., Taiwan), H. L. Hwang (National Tsing Hua Univ., Taiwan)
Pagepp. 127 - 128

P-21 (Growth and Characterization)
TitleInfrared Study of Tris(dimethylamino)silane (TDMAS) Adsorption and Ozone Irradiation on Si(100) for Atomic Layer Deposition of SiO2
AuthorFumihiko Hirose, Yuta Kinoshita (Yamagata Univ., Japan), Hironobu Miya (Hitachi Kokusai Electric Inc., Japan), Kazuhiro Hirahara (Shin-Etsu Chemical Co., Japan), Yasuo Kimura, Michio Niwano (Tohoku Univ., Japan)
Pagepp. 129 - 130

P-22 (Growth and Characterization)
TitleInfrared Study of Tetrakis(ethylmethylamino)hafnium (TEMAH) Adsorption and Ozone Irradiation for Atomic Layer Deposition of HfO2
AuthorHironobu Miya (Hitachi Kokusai Electric Inc., Japan), Fumihiko Hirose, Yuta Kinoshita (Yamagata Univ., Japan), Kazuhiro Hirahara (Shin-Etsu Chemical Co., Japan), Yasuo Kimura, Michio Niwano (Tohoku Univ., Japan)
Pagepp. 131 - 132

P-23 (Growth and Characterization)
TitleMolecular Dynamics Study of Oxidation Process with SiO Emission in the Si/SiO2 Interface
AuthorNorihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta (Fujitsu Laboratories Limited, Japan)
Pagepp. 133 - 134

P-24 (Growth and Characterization)
Title“Temperature Oscillation” as a Real-Time Monitoring of the Growth of 3C-SiC on Si Substrate
AuthorEiji Saito, Atsushi Konno, Takashi Ito (Tohoku Univ., Japan), Kanji Yasui (Nagaoka Univ. of Tech., Japan), Hideki Nakazawa (Hirosaki Univ., Japan), Tetsuo Endoh (Tohoku Univ., Japan), Yuzuru Narita (Kyushu Inst. of Tech., Japan), Maki Suemitsu (Tohoku Univ., Japan)
Pagepp. 135 - 136

P-25 (Growth and Characterization)
TitleLow Temperature Selective Epitaxial Growth of SiGe Layers Using Various Dielectric Mask Patterns and Process Conditions
AuthorA-Ram Choi, Sang-Sik Choi (Chonbuk National Univ., Republic of Korea), Jin-Tae Kim, Deok-Ho Cho, Tae-Hyun Han (AUK Corp., Republic of Korea), Kyu-Hwan Shim (Chonbuk National Univ., Republic of Korea)
Pagepp. 137 - 138

P-26 (Growth and Characterization)
TitleCharacterization of the Soft-X-ray Detectors Fabricated with High-quality CVD Diamond Thin-films
AuthorYoko Iwakaji, Masayuki Kanasugi, Osamu Maida (Osaka Univ., Japan), Yukiharu Takeda, Yuji Saitoh (Japan Atomic Energy Agency, Japan), Toshimichi Ito (Osaka Univ., Japan)
Pagepp. 139 - 140

P-27 (Growth and Characterization)
TitleElectronic Structure and Junction Property of Hetero-epitaxial CVD Diamond on Ir(001)
AuthorNaoki Amano, Hiroshi Kawata, Tadahiko Goto, Shozo Kono (Tohoku Univ., Japan)
Pagep. 141

P-28 (Growth and Characterization)
TitleCrystalline Quality Improvements of the Homoepitaxial CVD Diamond Films on the Vicinal Substrates
AuthorOsamu Maida, Hidetaka Miyatake (Osaka Univ., Japan), Tokuyuki Teraji (National Inst. for Materials Science, Japan), Toshimichi Ito (Osaka Univ., Japan)
Pagepp. 143 - 144

P-29 (Growth and Characterization)
TitleCharacterization of Phosphor-Doped Homoepitaxial (100) Diamond Films Grown Using High-Power-Density MWPCVD Method with Conventional Quartz-Tube Chamber
AuthorTakahiro Nakai, Osamu Maida, Toshimichi Ito (Osaka Univ., Japan)
Pagepp. 145 - 146

P-30 (Growth and Characterization)
TitleIn-Situ TEM Observation of Silicide Formation and Dopant Segregation in Ni Fully Silicided Gates
AuthorTakuji Hosoi, Kentaro Shibahara (Hiroshima Univ., Japan), Minghui Song, Kazuo Furuya (NIMS, Japan)
Pagepp. 147 - 148

P-31 (Growth and Characterization)
TitleDiffusion Control of Soft-X-Ray-Excited Carriers in High-Quality CVD Diamond Layers to the HPHT Substrate
AuthorMasayuki Kanasugi, Yoko Iwakaji, Takashi Yamamoto, Osamu Maida (Osaka Univ., Japan), Yukiharu Takeda, Yuji Saitoh (Japan Atomic Energy Agency, Japan), Toshimichi Ito (Osaka Univ., Japan)
Pagepp. 149 - 150

P-32 (Growth and Characterization)
TitleHeavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition
AuthorHiroki Tanno, Masao Sakuraba (Tohoku Univ., Japan), Bernd Tillack (IHP, Germany), Junichi Murota (Tohoku Univ., Japan)
Pagepp. 151 - 152

P-33 (Growth and Characterization)
TitleElectrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si1-xGex/Si(100) Heterostructure
AuthorTakahiro Seo, Masao Sakuraba, Junichi Murota (Tohoku Univ., Japan)
Pagepp. 153 - 154

P-34 (Formation and Characterization of Nanostructures)
TitleModified Growth of Ge Quantum Dots Using C2H4 and SiCH6 Mediation by Ultra-high Vacuum Chemical Vapor Deposition
AuthorSheng-Wei Lee (National Central Univ., Taiwan), Pang-Shiu Chen (Minghsin Univ. of Science and Tech., Taiwan), Min-Hung Lee (National Taiwan Normal Univ., Taiwan), Chee-Wee Liu (National Taiwan Univ., Taiwan)
Pagepp. 155 - 156

P-35 (Formation and Characterization of Nanostructures)
TitleFabrication and Kinetics Investigation of Vertically Aligned Si Nanowires on (111)Si Substrate
AuthorS. L. Cheng, Y. H. Chang, C. H. Chung (National Central Univ., Taiwan)
Pagepp. 157 - 158

P-36 (Formation and Characterization of Nanostructures)
TitleRoom Temperature Growth of Crystalline Si Thin Films on Nano-Scaled Substrates Using DC Magnetron Sputtering Deposition Method
AuthorHarunaka Yamaguchi, Osamu Maida, Toshimichi Ito (Osaka Univ., Japan)
Pagepp. 159 - 160

P-37 (Formation and Characterization of Nanostructures)
TitleSelf-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System
AuthorTakashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota (Res. Inst. Electr. Comm., Tohoku Univ., Japan), Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa (Hitachi Kokusai Electric Inc., Japan)
Pagepp. 161 - 162

P-38 (Surface and Interface Control)
TitleAir Exposing Impact between Plasma Nitridation and Postnitridation Annealing on Fabrication of HfSiON Thin Film
AuthorSadayoshi Horii (Hitachi Kokusai Electric Inc., Japan), Dai Ishikawa (Semiconductor Leading Edge Technologies Inc, Japan), Atsushi Sano (Hitachi Kokusai Electric Inc., Japan), Satoshi Kamiyama, Takayuki Aoyama, Yasuo Nara (Semiconductor Leading Edge Technologies Inc, Japan)
Pagepp. 163 - 164

P-39 (Surface and Interface Control)
TitlePreparation of Thin TiNx Film and Its Application to Extremely Thin Diffusion Barrier Without Intermixing Interface Layer
AuthorMayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech., Japan), Y. Hayasaka, E. Aoyagi (Tohoku Univ., Japan), Atsushi Noya (Kitami Inst. of Tech., Japan)
Pagepp. 165 - 166

P-40 (Surface and Interface Control)
TitleStudies on Dielectric Relaxation and Defect Generation for Reliability Assessments in Ultrathin High-k Gate Dielectrics on Ge
AuthorChandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), Milan Kumar Bera (City Univ. of Hong Kong, Hong Kong), Prabir Kumar Bose (Jadavpur Univ., Jadavpur, Kolkata, India), C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Pagepp. 167 - 168

P-41 (Surface and Interface Control)
TitleElectrical Characterization and Carrier Transportation in Hf-silicate Dielectric Using ALD Gate Stacks for 90 nm Node MOSFETs
AuthorH.W. Chen, K. C. Chen, S. Y. Chen, H. S. Haung (National Taipei Univ. of Tech., Taiwan), C. H. Liu, F. C. Chiu (Ming Chuan Univ., Taiwan), L. W. Cheng, C. T. Lin, G. H. Ma (Central R&D Division, United Microelectronics Corp. (UMC), Taiwan)
Pagepp. 169 - 170

P-42 (Surface and Interface Control)
TitleEffect of In and Sb Mono-layers to Form Rotated InSb Films on Si(111) Substrate
AuthorMitsufumi Saito, Masayuki Mori, Koichi Maezawa (Univ. of Toyama, Japan)
Pagepp. 171 - 172

P-43 (Surface and Interface Control)
TitleGrain Boundaries Stuffed Ru Film for Advanced Cu Diffusion Barrier
AuthorDung-Ching Perng, Jia-Bin Yeh, Kuo-Chung Hsu (National Cheng Kung Univ., Taiwan)
Pagepp. 173 - 174

P-44 (Surface and Interface Control)
TitleEffect of Electrical Degenerated Layer on the Carrier Transport Property of ZnO Thin Films on YSZ substrate
AuthorShinya Sakamoto, Takeshi Oshio, Atsushi Ashida, Takeshi Yoshimura, Norifumi Fujimura (Osaka Prefecture Univ., Japan)
Pagepp. 175 - 176

P-45 (Surface and Interface Control)
TitleDielectric Properties of Ferroelectric/DMS Heterointerface Using YMnO3 and Ce Doped Si
AuthorDaisuke Shindo, Takeshi Yoshimura, Norifumi Fujimura (Osaka Prefecture Univ., Japan)
Pagepp. 177 - 178

P-46 (Surface and Interface Control)
TitleLEED and AFM Study of Cl-terminated Ge(111) Surfaces after HCl Dipping
AuthorKazufumi Yoneda, Junichi Uchikoshi, Mizuho Morita, Kenta Arima (Osaka Univ., Japan)
Pagepp. 179 - 180

P-47 (Surface and Interface Control)
TitleEvaluation of Effective Work Function in Ru/HfSiON/SiO2 Gate Stack Structures – Thickness Dependence in Bottom SiO2 layer
AuthorHiromichi Yoshinaga, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Selete, Japan)
Pagepp. 181 - 182

P-48 (Process Technology)
TitleLow Temperature Oxidation of SiGe by Liquid-Phase Deposition
AuthorYu-Hung Chen, Chung-Yuan Kung (National Chung Hsing Univ., Taiwan), Jun-Dar Hwang, Hung-Yu Lin, Hsuan-Jung Chan (Da-Yeh Univ., Taiwan)
Pagepp. 183 - 184

P-49 (Process Technology)
TitleSurface Passivation of InGaP/GaAs HBT Using Silicon Nitride Film Deposited by ECR-CVD Plasma
AuthorLeandro Tiago Manera, Leonardo Breseghello Zoccal, José Alexandre Diniz, Peter J. Tatsch, Ioshiaki Doi (State Univ. of Campinas, Brazil)
Pagepp. 185 - 186

P-50 (Process Technology)
TitleSelective Vapor Phase Etching of SiGe by HCl in a RPCVD Reactor
AuthorYuji Yamamoto, Klaus Köpke, Rainer Kurps, Bernd Tillack (IHP, Germany)
Pagepp. 187 - 188

P-51 (Process Technology)
TitleCharacterization of the Low Temperature Dopant Activation Behavior at NiSi/Silicon Interface Formed by Implant Into Silicide Method
AuthorKow-Ming Chang, Jian-Hong Lin, Cheng-Yen Sun (National Chiao Tung Univ., Taiwan)
Pagepp. 189 - 190

P-52 (Process Technology)
TitleCharacterization of the Low Temperature Activated N+/P Junction Formed by Implant Into Silicide Method
AuthorKow-Ming Chang, Jian-Hong Lin, Chih-Hsiang Yang (National Chiao Tung Univ., Taiwan)
Pagepp. 191 - 192

P-53 (Process Technology)
TitleThe Effects of Plasma Treatment on the Thermal Stability of HfO2 Thin Films
AuthorKwo-Ming Chang, Bwo-Ning Chen, Shih-Ming Huang (National Chiao Tung Univ., Taiwan)
Pagepp. 193 - 194

P-54 (Process Technology)
TitleControlling the Strain of SiGe Virtual Substrate by Incorporating Boron (B) into the Underlying Si Layer
AuthorWu-Ping Huang, Ke-Yao Wang (National Taiwan Univ., Taiwan), Wei-Shi Tan (Nanjing Univ. of Science and Tech., China), Hung-Hsiang Cheng (National Taiwan Univ., Taiwan)
Pagepp. 195 - 196

P-55 (Process Technology)
TitleDesign and Optimization of Embedded SiGe Source/Drain pMOSFETs
AuthorTapas Maiti (Indian Inst. of Tech., Kharagpur, India), Arup Saha (Synopsys (India) Pvt. Ltd., India), Chinmay Maiti (Indian Inst. of Tech., Kharagpur, India)
Pagepp. 197 - 198

P-56 (Process Technology)
TitleLow-Temperature Source/Drain Contact Formation Using Silicidation Induced Activation of Implanted Impurities
AuthorTanemasa Asano, Masahiko Esaki, Gou Nakagawa (Kyushu Univ., Japan)
Pagepp. 199 - 200

P-57 (Process Technology)
TitleEffects of High-Concentration Phosphorus-Doping on Crystal Quality and Lattice Strain in SiGe HBTs
AuthorKatsuya Oda, Makoto Miura (Central Research Laboratory, Hitachi Ltd., Japan), Hiromi Shimamoto (Renesas Northern Japan Semiconductor, Inc., Japan), Katsuyoshi Washio (Central Research Laboratory, Hitachi Ltd., Japan)
Pagepp. 201 - 202

P-58 (Device Technology:)
TitleShort Channel Effect Improved Strained-Si:C-Source/Drain PMOSFETs
AuthorM. H. Lee (National Taiwan Normal Univ., Taiwan), S. T. Chang (National Chung Hsing Univ., Taiwan), S. Maikap (Chang Gung Univ., Taiwan), K.-W. Shen (National Taiwan Normal Univ., Taiwan), W.-C. Wang (National Chung Hsing Univ., Taiwan)
Pagepp. 203 - 204

P-59 (Device Technology:)
TitleSi/SiGe/Si Quantum Well Schottky Barrier Diodes
AuthorPing-Sheng Kuo, C. -H. Lin, C. -Y. Peng, Y. -C. Fu, C. W. Liu (National Taiwan Univ., Taiwan)
Pagepp. 205 - 206

P-60 (Device Technology:)
TitleThe Switch of the Worst Case on NBTI and Hot Carrier Reliability for 0.13 µm PMOSFETs
AuthorChia-Hao Tu, Shuang-Yuan Chen, Meng-Hong Lin, Zhen-Ying Hsieh (National Taipei Univ. of Tech., Taiwan), Mu-Chun Wang (Minghsin Univ. of Science and Tech., Taiwan), Ssu-Han Wu, Sam Jhou, Joe Ko (Special Technology Division, United Microelectronics Corp., Taiwan), Heng Sheng Haung (National Taipei Univ. of Tech., Taiwan)
Pagepp. 207 - 208

P-61 (Device Technology:)
TitleValence Subband Properties of Strained Si1-xCx Alloys in PMOS Inversion Layer
AuthorShu-Tong Chang, Jun Wei Fan, Chung-Yi Lin (National Chung Hsing Univ., Taiwan)
Pagepp. 209 - 210

P-62 (Device Technology:)
TitleComparison Study about Low Frequency Noise and Hot-carrier Reliability of SiGe PD-SOI pMOSFETs
AuthorSang-Sik Choi, A-Ram Choi, Jeon-Wook Yang (Chonbuk National Univ., Republic of Korea), Yong-Woo Hwang, Deok-Ho Cho (AUK, Republic of Korea), Kyu-Hwan Shim (Chonbuk National Univ., Republic of Korea)
Pagepp. 211 - 212

P-63 (Others)
TitleLeakage Current and Paramagnetic Defects in SiCN Dielectrics for Copper Diffusion Barrier
AuthorKiyoteru Kobayashi, Hisashi Yokoyama, Masato Endoh, Satoshi Hosaka, Mitsuo Kato (Tokai Univ., Japan)
Pagepp. 213 - 214



Wednesday, November 14, 2007

Session OA3  High-k Gate Stacks
Time: 9:00 - 10:45 Wednesday, November 14, 2007
Location: RoomA
Chairs: Y. Nara (Selete, Japan), P. D. Ye (Purdue Univ., United States)

OA3-1 (Time: 9:00 - 9:15)
TitleImpact of Low Temperature Anneal on Effective Work Function and Chemical Bonding Features for Ru/HfSiON/SiON Gate Stack
AuthorAkio Ohta, Hiromichi Yoshinaga, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Semiconductor Leading Edge technologies, Inc., Japan)
Pagepp. 215 - 216

OA3-2 (Time: 9:15 - 9:30)
TitleBand Bending Measurement of HfO2/SiO2/Si Capacitor with ultra-thin La2O3 Insertion by XPS
AuthorKuniyuki Kakushima, Kouichi Okamoto, Manabu Adachi, Kiichi Tachi, Jaeyeol Song, Soushi Sato, Takamasa Kawanago, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Pagepp. 217 - 218

OA3-3 (Time: 9:30 - 9:45)
TitleCounter-Dipole Formation at TaCX/HfO2 and HfCX/HfO2 Interfaces Compensating HfO2/SiO2 Dipole-induced VFB Shift in MeCX/HfO2/SiO2/Si Structures
AuthorWataru Mizubayashi (MIRAI-ASRC, AIST, Japan), Koji Akiyama (MIRAI-ASET, Japan), Wenwu Wang (MIRAI-ASRC, AIST, Japan), Minoru Ikeda, Kunihiko Iwamoto, Yuuichi Kamimuta, Akito Hirano (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 219 - 220

OA3-4 (Time: 9:45 - 10:00)
TitleRole of Oxygen Vacancy in HfO2 and Al2O3 Dielectrics on Effective Workfunction Shifts Using HfxRu1-x Gates
AuthorYu Nunoshige (Shibaura Inst. of Tech., Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan)
Pagepp. 221 - 222

OA3-5 (Time: 10:00 - 10:15)
TitleStructural Optimization of HfTiSiO High-k Gate Dielectrics by Utilizing In-Situ PVD-Based Fabrication Method
AuthorHiroaki Arimura, Shinya Horie (Osaka Univ., Japan), Takashi Minami, Naomu Kitano, Motomu Kosuda (Canon ANELVA Corp., Japan), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 223 - 224

OA3-6 (Time: 10:15 - 10:30)
TitleImproving Hafnium Oxide Reliability by Using Plasma Immersion Ion Implantation of Aluminium
AuthorBanani Sen, Bingliang Yang, Hei Wong, C. W. Kok, P.K. Chu, Amping Huang (City Univ. of Hong Kong, Hong Kong)
Pagepp. 225 - 226

OA3-7 (Time: 10:30 - 10:45)
TitleThe Impact of Post Deposition NH3-Anneal on La Oxide Films Formed by MOCVD Using La(DPM)3
AuthorRyo Yougauchi, Akio Ohta, Yuki Munetaka, Hideki Murakami, Seiichirou Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan)
Pagepp. 227 - 228


Session OB3  Si/Ge-based Transistors
Time: 9:00 - 10:45 Wednesday, November 14, 2007
Location: RoomB
Chairs: Y. C. Yeo (National Univ. of Singapore, Singapore), K. Natori (Univ. of Tsukuba, Japan)

OB3-1 (Time: 9:00 - 9:15)
TitleOn the Optimization of SiGe PNP HBT in a High-voltage CBiCMOS Process
AuthorTatsuya Tominari (Hitachi, Ltd., Japan), Makoto Miura (Central Research Laboratory, Hitachi Ltd., Japan), Mitsuru Arai (Hitachi ULSI Systems Co., Ltd., Japan), Yoshinori Yoshida, Hidenori Sato, Takayuki Aoki (Hitachi, Ltd., Japan), Katsuyoshi Washio (Central Research Laboratory, Hitachi Ltd., Japan), Takashi Hashimoto (Hitachi, Ltd., Japan)
Pagepp. 229 - 230

OB3-2 (Time: 9:15 - 9:30)
TitleFluctuation of Threshold Voltage in Strained Si MOSFETs Induced by Strain Variation in Strained-Si Channels on SGOI Substrates
AuthorNaoharu Sugiyama, Toshinori Numata, Norio Hirashita, Toshifumi Irisawa (MIRAI-ASET, Japan), Shin-ichi Takagi (Univ. of Tokyo, Japan)
Pagepp. 231 - 232

OB3-3 (Time: 9:30 - 9:45)
TitleEffects of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method
AuthorSanjeewa Dissanayake, Satoshi Tanabe (Univ. of Tokyo, Japan), Satoshi Sugahara (Tokyo Inst. of Tech., Japan), Mitsuru Takenaka, Shin-ichi Takagi (Univ. of Tokyo, Japan)
Pagepp. 233 - 234

OB3-4 (Time: 9:45 - 10:00)
TitleFabrication of Ge-channel MOSFETs by Using Replacement Gate Process and Selective Epitaxial Growth
AuthorKoichi Terashima, Akihito Tanabe, Takashi Nakagawa, Kaoru Mori, Taeko Ikarashi (NEC Corp., Japan), Junko Nakatsuru, Hiroki Date, Manabu Ikemoto (Canon ANELVA Corp., Japan), Toru Tatsumi (NEC Corp., Japan)
Pagepp. 235 - 236

OB3-5 (Time: 10:00 - 10:15)
TitleSource/Drain Engineering for MOSFETs with e-Si:C Technology
AuthorHiroshi Itokawa, Nobuaki Yasutake, Naoki Kusunoki, Shintaro Okamoto, Nobutoshi Aoki, Ichiro Mizushima (Toshiba Corp., Japan)
Pagepp. 237 - 238

OB3-6 (Time: 10:15 - 10:30)
TitleLeakage Current Study of Si1-xCx Embedded Source/Drain Junctions
AuthorEddy Simoen, Bertrand Vissouvanadin, Mireia Bargallo Gonzalez, Peter Verheyen, Roger Loo, Cor Claeys (IMEC, Belgium), Vladimir Machkaoutsan (ASM Belgium, Belgium), Mathias Bauer, Shawn Thomas (ASM America, United States), Joan-Ping Lu, Rick Wise (Texas Instruments, United States)
Pagepp. 239 - 240

OB3-7 (Time: 10:30 - 10:45)
TitleExploring Width Effect on Performance Enhancement in NMOSFETs with Silicon-Carbon Alloy Stressor and Tensile Stress Silicon Nitride Linear
AuthorWei–Ching Wang, Shu-Tong Chang, Jacky Huang (National Chung Hsing Univ., Taiwan), Shu-Hui Liao (ChungChou Inst. of Tech., Taiwan), Chung-Yi Lin (National Chung Hsing Univ., Taiwan)
Pagepp. 241 - 242


Session I6  Invited Session: Diamond and C-Related Film Formation and Its Applications
Time: 11:10 - 12:25 Wednesday, November 14, 2007
Location: RoomA
Chairs: T. Ito (Osaka Univ., Japan), H. Kawarada (Waseda Univ., Japan)

I6-1 (Time: 11:10 - 11:35)
Title(Invited Paper) Metal-Diamond Semiconductor Interface and Photodiode Application
AuthorYasuo Koide (National Institute for Materials Science (NIMS), Japan)
Pagepp. 243 - 244

I6-2 (Time: 11:35 - 12:00)
Title(Invited Paper) Surface, Interface and Doping Science of Diamond and FET Applications
AuthorHiroshi Kawarada (Waseda Univ., Japan)
Pagepp. 245 - 246

I6-3 (Time: 12:00 - 12:25)
Title(Invited Paper) The Present Status and Future of SiC Processes
AuthorKenji Fukuda (Power Electronics Research Center, AIST, Japan)
Pagepp. 247 - 248


Session I7  Invited Session: High-k Materials on Semiconductors
Time: 14:00 - 15:15 Wednesday, November 14, 2007
Location: RoomA
Chairs: S. Miyazaki (Hiroshima Univ., Japan), S. Zaima (Nagoya Univ., Japan)

I7-1 (Time: 14:00 - 14:25)
Title(Invited Paper) Control of High-k / Germanium Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilization
AuthorKoji Kita, Toshitake Takahashi, Hideyuki Nomura, Sho Suzuki, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 249 - 250

I7-2 (Time: 14:25 - 14:50)
Title(Invited Paper) Opportunities and Challenges for High-k/III-V Integration
AuthorPeide D. Ye (Purdue Univ., United States)
Pagepp. 251 - 252

I7-3 (Time: 14:50 - 15:15)
Title(Invited Paper) High-k/Metal Gate Stack for Advanced CMOS Technology
AuthorYasuo Nara (Selete, Japan)
Pagepp. 253 - 254


Session C2  Closing
Time: 15:15 - 15:30 Wednesday, November 14, 2007
Location: RoomA
Chair: T. Okumura (Tokyo Metropolitan Univ., Japan)