Fifth International Symposium on Control of Semiconductor Interfaces
Author Index

Table of Contents:   A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  R  S  T  U  V  W  Y  Z  

A

Adachi, Manabu (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Ahmad, Norsuryati Binti (Univ. of Toyama)   p. 121 (P-17)
Ahmet, Parhat (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Akazawa, Housei (NTT)   p. 81 (OB2-3)
Akiyama, Koji (MIRAI-ASET)   p. 219 (OA3-3)
Akiyama, Nao (Tohoku Univ.)   p. 71 (OA2-4)
Alpuim, P. (Universidade do Minho, Campus de Azurem)   p. 111 (P-12)
Amano, Naoki (Tohoku Univ.)   p. 141 (P-27)
Ando, Yu-chiro (Kyushu Univ.)   p. 97 (P-5)
Ando, Yuichiro (Kyushu Univ.)   p. 99 (P-6)
Aoki, Nobutoshi (Toshiba Corp.)   p. 237 (OB3-5)
Aoki, Takayuki (Hitachi, Ltd.)   p. 229 (OB3-1)
Aoyagi, E. (Tohoku Univ.)   p. 165 (P-39)
Aoyama, Takayuki (Semiconductor Leading Edge Technologies Inc)   p. 163 (P-38)
Arai, Mitsuru (Hitachi ULSI Systems Co., Ltd.)   p. 229 (OB3-1)
Aratani, Takashi (Tohoku Univ.)   p. 73 (OA2-5)
Arima, Kenta (Osaka Univ.)   p. 179 (P-46)
Arimura, Hiroaki (Osaka Univ.)   p. 223 (OA3-5)
Asano, Tanemasa (Kyushu Univ.)   p. 199 (P-56)
Ashida, Atsushi (Osaka Prefecture Univ.)   p. 175 (P-44)

B

Bae, Hyun-Cheol (Electronics and Telecommunications Research Institute)   p. 115 (P-14)
Bargallo Gonzalez, Mireia (IMEC)   p. 239 (OB3-6)
Barski, A. (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille)   p. 29 (I4-3)
Bauer, Mathias (ASM America)   p. 239 (OB3-6)
Bellenger, Florence (IMEC)   p. 25 (I4-1)
Bera, Milan Kumar (City Univ. of Hong Kong)   p. 113 (P-13)
Bera, Milan Kumar (City Univ. of Hong Kong)   p. 167 (P-40)
Bhattacharya, Sekhar (Queen's Univ. of Belfast)   p. 113 (P-13)
Borot, Gaël (STMicroelectronics)   p. 43 (OA1-2)
Bose, Prabir Kumar (Jadavpur Univ., Jadavpur, Kolkata)   p. 167 (P-40)
Burhanudin, Zainal Arif (Shizuoka Univ.)   p. 11 (I1-4)

C

Caymax, Matty (IMEC)   p. 25 (I4-1)
Caymax, Matty (IMEC)   p. 47 (OA1-4)
Chan, Hsuan-Jung (Da-Yeh Univ.)   p. 183 (P-48)
Chang, Kow-Ming (National Chiao Tung Univ.)   p. 189 (P-51)
Chang, Kow-Ming (National Chiao Tung Univ.)   p. 191 (P-52)
Chang, Kwo-Ming (National Chiao Tung Univ.)   p. 193 (P-53)
Chang, S. T. (National Chung Hsing Univ.)   p. 95 (P-4)
Chang, S. T. (National Chung Hsing Univ.)   p. 107 (P-10)
Chang, S. T. (National Chung Hsing Univ.)   p. 203 (P-58)
Chang, Shu-Tong (National Chung Hsing Univ.)   p. 209 (P-61)
Chang, Shu-Tong (National Chung Hsing Univ.)   p. 241 (OB3-7)
Chang, W. -H. (National Chiao Tung Univ.)   p. 45 (OA1-3)
Chang, Y. H. (National Central Univ.)   p. 157 (P-35)
Chen, Bwo-Ning (National Chiao Tung Univ.)   p. 193 (P-53)
Chen, H. W. (National Taipei Univ. of Tech.)   p. 127 (P-20)
Chen, H. Y. (National Central Univ.)   p. 105 (P-9)
Chen, H.W. (National Taipei Univ. of Tech.)   p. 169 (P-41)
Chen, K. C. (National Taipei Univ. of Tech.)   p. 169 (P-41)
Chen, P. S. (Minghsin Univ. of Science and Tech.)   p. 107 (P-10)
Chen, Pang Shiu (Minghsin Univ. of Science and Tech.)   p. 119 (P-16)
Chen, Pang-Shiu (Minghsin Univ. of Science and Tech.)   p. 155 (P-34)
Chen, S. Y. (National Taipei Univ. of Tech.)   p. 127 (P-20)
Chen, S. Y. (National Taipei Univ. of Tech.)   p. 169 (P-41)
Chen, Shuang-Yuan (National Taipei Univ. of Tech.)   p. 207 (P-60)
Chen, Yu-Hung (National Chung Hsing Univ.)   p. 183 (P-48)
Cheng, C. (MIT)   p. 19 (I3-1)
Cheng, Hung-Hsiang (National Taiwan Univ.)   p. 87 (OB2-6)
Cheng, Hung-Hsiang (National Taiwan Univ.)   p. 195 (P-54)
Cheng, L. W. (Central R&D Division, United Microelectronics Corp. (UMC))   p. 127 (P-20)
Cheng, L. W. (Central R&D Division, United Microelectronics Corp. (UMC))   p. 169 (P-41)
Cheng, S. L. (National Central Univ.)   p. 105 (P-9)
Cheng, S. L. (National Central Univ.)   p. 157 (P-35)
Chilukuri, K. (MIT)   p. 19 (I3-1)
Chiu, F. C. (Ming Chuan Univ.)   p. 127 (P-20)
Chiu, F. C. (Ming Chuan Univ.)   p. 169 (P-41)
Chiussi, Stefano (Física Aplicada, E.T.S.I.I.)   p. 109 (P-11)
Chiussi, Stefano (Física Aplicada, E.T.S.I.I.)   p. 111 (P-12)
Cho, Deok-Ho (AUK Corp.)   p. 137 (P-25)
Cho, Deok-Ho (AUK)   p. 211 (P-62)
Choi, A-Ram (Chonbuk National Univ.)   p. 137 (P-25)
Choi, A-Ram (Chonbuk National Univ.)   p. 211 (P-62)
Choi, Sang-Sik (Chonbuk National Univ.)   p. 137 (P-25)
Choi, Sang-Sik (Chonbuk National Univ.)   p. 211 (P-62)
Chu, P.K. (City Univ. of Hong Kong)   p. 225 (OA3-6)
Chung, C. H. (National Central Univ.)   p. 157 (P-35)
Chung, Tsung Ming (Université catholique de Louvain, Microwave Lab.)   p. 23 (I3-3)
Claeys, Cor (IMEC)   p. 239 (OB3-6)

D

Date, Hiroki (Canon ANELVA Corp.)   p. 235 (OB3-4)
Delabie, Annelies (IMEC)   p. 25 (I4-1)
Derrien, J. (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille)   p. 29 (I4-3)
Diniz, José A. (State Univ. of Campinas)   p. 89 (P-1)
Diniz, José Alexandre (State Univ. of Campinas)   p. 185 (P-49)
Dissanayake, Sanjeewa (Univ. of Tokyo)   p. 233 (OB3-3)
Dohrman, C. (MIT)   p. 19 (I3-1)
Doi, Ioshiaki (State Univ. of Campinas)   p. 89 (P-1)
Doi, Ioshiaki (State Univ. of Campinas)   p. 185 (P-49)
dos Anjos, Alexandre M. P. (State Univ. of Campinas)   p. 89 (P-1)
Dutartre, Didier (STMicroelectronics)   p. 43 (OA1-2)

E

Eisele, L. (Universitaet der Bundeswehr Muenchen)   p. 109 (P-11)
Endoh, Masato (Tokai Univ.)   p. 213 (P-63)
Endoh, Tetsuo (Tohoku Univ.)   p. 135 (P-24)
Esaki, Masahiko (Kyushu Univ.)   p. 199 (P-56)

F

Fan, Jun Wei (National Chung Hsing Univ.)   p. 209 (P-61)
Fedorchenko, Alexander I. (National Taiwan Univ.)   p. 87 (OB2-6)
Filonovich, S. A. (Universidade do Minho, Campus de Azurem)   p. 111 (P-12)
Fitzgerald, E.A. (MIT)   p. 19 (I3-1)
Flandre, Denis (Université catholique de Louvain, Microelectronics Lab.)   p. 23 (I3-3)
Fu, Y. -C. (National Taiwan Univ.)   p. 205 (P-59)
Fujikata, Junichi (NEC)   p. 35 (I5-2)
Fujimura, Norifumi (Osaka Prefecture Univ.)   p. 175 (P-44)
Fujimura, Norifumi (Osaka Prefecture Univ.)   p. 177 (P-45)
Fujiwara, Akira (NTT)   p. 9 (I1-3)
Fukatsu, S. (Univ. of Tokyo)   p. 61 (OB1-5)
Fukuda, Kazunori (Japan Synchrotron Radiation Research Institute)   p. 41 (OA1-1)
Fukuda, Kenji (Power Electronics Research Center, AIST)   p. 247 (I6-3)
Furukawa, Hirokazu (Hiroshima Univ.)   p. 51 (OA1-6)
Furuya, Kazuo (NIMS)   p. 147 (P-30)

G

Ghibaudo, Gérard (IMEP, INPG)   p. 43 (OA1-2)
Gontad, F. (Física Aplicada, E.T.S.I.I.)   p. 109 (P-11)
Gontad, F. (Física Aplicada, E.T.S.I.I.)   p. 111 (P-12)
Gonzalez, P. (Física Aplicada, E.T.S.I.I.)   p. 111 (P-12)
Goto, Seiichi (Tohoku Univ.)   p. 125 (P-19)
Goto, Tadahiko (Tohoku Univ.)   p. 141 (P-27)
Gri, Martine (IMEP, INPG)   p. 43 (OA1-2)
Gupta, S. (MIT)   p. 19 (I3-1)

H

Han, Tae-Hyun (AUK Corp.)   p. 137 (P-25)
Hanafusa, Hiroaki (Tokyo Univ. of Agric. and Technol.)   p. 83 (OB2-4)
Harada, Masatomi (MIRAI-ASET)   p. 69 (OA2-3)
Hasegawa, Satoshi (Tohoku Univ.)   p. 125 (P-19)
Hashimoto, Takashi (Hitachi, Ltd.)   p. 229 (OB3-1)
Hattori, Takeo (Tohoku Univ.)   p. 73 (OA2-5)
Hattori, Takeo (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Haung, H. S. (National Taipei Univ. of Tech.)   p. 127 (P-20)
Haung, H. S. (National Taipei Univ. of Tech.)   p. 169 (P-41)
Haung, Heng Sheng (National Taipei Univ. of Tech.)   p. 207 (P-60)
Hayasaka, Y. (Tohoku Univ.)   p. 165 (P-39)
Heinemann, Bernd (IHP)   p. 13 (I2-1)
Higashi, Seiichiro (Hiroshima Univ.)   p. 51 (OA1-6)
Higashi, Seiichiro (Hiroshima Univ.)   p. 181 (P-47)
Higashi, Seiichiro (Hiroshima Univ.)   p. 215 (OA3-1)
Higashi, Seiichirou (Hiroshima Univ.)   p. 227 (OA3-7)
Higuchi, Masaaki (Tohoku Univ.)   p. 73 (OA2-5)
Hirahara, Kazuhiro (Shin-Etsu Chemical Co.)   p. 129 (P-21)
Hirahara, Kazuhiro (Shin-Etsu Chemical Co.)   p. 131 (P-22)
Hirama, Kazuyuki (Waseda Univ.)   p. 53 (OB1-1)
Hiramatsu, Mineo (Meijo Univ.)   p. 79 (OB2-2)
Hirano, Akito (MIRAI-ASET)   p. 219 (OA3-3)
Hirashita, Norio (MIRAI-ASET)   p. 231 (OB3-2)
Hirata, Makoto (Tokyo Univ. of Agric. and Technol.)   p. 83 (OB2-4)
Hirose, Fumihiko (Yamagata Univ.)   p. 129 (P-21)
Hirose, Fumihiko (Yamagata Univ.)   p. 131 (P-22)
Hirose, Masataka (National Institure of Advanced Industrial Science and Technology)   p. 1 (K-1)
Hirose, Nobumitsu (National Institute of Information and Communications Technology)   p. 63 (OB1-6)
Hirose, Nobumitsu (National Institute of Information and Communications Technology)   p. 83 (OB2-4)
Höllt, L. (Universitaet der Bundeswehr Muenchen)   p. 109 (P-11)
Hori, Masaru (Nagoya Univ.)   p. 79 (OB2-2)
Horie, Shinya (Osaka Univ.)   p. 223 (OA3-5)
Horiguchi, Seiji (Akita Univ.)   p. 9 (I1-3)
Horii, Sadayoshi (Hitachi Kokusai Electric Inc.)   p. 163 (P-38)
Hosaka, Satoshi (Tokai Univ.)   p. 213 (P-63)
Hosoi, Takuji (Hiroshima Univ.)   p. 147 (P-30)
Hosoi, Takuji (Osaka Univ.)   p. 223 (OA3-5)
Houssa, Michel (IMEC)   p. 25 (I4-1)
Hsieh, Zhen-Ying (National Taipei Univ. of Tech.)   p. 207 (P-60)
Hsu, Kuo-Chung (National Cheng Kung Univ.)   p. 173 (P-43)
Huang, Amping (City Univ. of Hong Kong)   p. 225 (OA3-6)
Huang, Jacky (National Chung Hsing Univ.)   p. 241 (OB3-7)
Huang, Shih-Ming (National Chiao Tung Univ.)   p. 193 (P-53)
Huang, Wu-Ping (National Taiwan Univ.)   p. 87 (OB2-6)
Huang, Wu-Ping (National Taiwan Univ.)   p. 195 (P-54)
Hwang, H. L. (National Tsing Hua Univ.)   p. 127 (P-20)
Hwang, Jun-Dar (Da-Yeh Univ.)   p. 183 (P-48)
Hwang, Yong-Woo (AUK)   p. 211 (P-62)

I

Igarashi, Jun (Univ. of Tokyo)   p. 61 (OB1-5)
Ikarashi, Taeko (NEC)   p. 235 (OB3-4)
Ikeda, Hiroya (Shizuoka Univ.)   p. 11 (I1-4)
Ikeda, Minoru (MIRAI-ASET)   p. 219 (OA3-3)
Ikemoto, Manabu (Canon ANELVA Corp.)   p. 235 (OB3-4)
Inayoshi, Youhei (Tohoku Univ.)   p. 117 (P-15)
Inokawa, Hiroshi (Shizuoka Univ.)   p. 9 (I1-3)
Inokuchi, Yasuhiro (Hitachi Kokusai Electric Inc.)   p. 161 (P-37)
Irisawa, Toshifumi (MIRAI-ASET)   p. 231 (OB3-2)
Ishibashi, Kiyohisa (Res. Inst. Electr. Comm., Tohoku Univ.)   p. 161 (P-37)
Ishikawa, Dai (Semiconductor Leading Edge Technologies Inc)   p. 163 (P-38)
Ishikawa, Michio (Institute for Semiconductor Technologies, ULVAC, Inc.)   p. 27 (I4-2)
Ito, Takashi (Tohoku Univ.)   p. 135 (P-24)
Ito, Toshimichi (Osaka Univ.)   p. 101 (P-7)
Ito, Toshimichi (Osaka Univ.)   p. 139 (P-26)
Ito, Toshimichi (Osaka Univ.)   p. 143 (P-28)
Ito, Toshimichi (Osaka Univ.)   p. 145 (P-29)
Ito, Toshimichi (Osaka Univ.)   p. 149 (P-31)
Ito, Toshimichi (Osaka Univ.)   p. 159 (P-36)
Itokawa, Hiroshi (Toshiba Corp.)   p. 237 (OB3-5)
Iwai, Hiroshi (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Iwakaji, Yoko (Osaka Univ.)   p. 139 (P-26)
Iwakaji, Yoko (Osaka Univ.)   p. 149 (P-31)
Iwamoto, Kunihiko (MIRAI-ASET)   p. 219 (OA3-3)
Iwasaki, Takayuki (Waseda Univ.)   p. 77 (OB2-1)
Izunome, Koji (Covalent Materials Corp.)   p. 41 (OA1-1)

J

Jhou, Sam (Special Technology Division, United Microelectronics Corp.)   p. 207 (P-60)
Jingu, Yoshikatsu (Waseda Univ.)   p. 53 (OB1-1)
Jinnai, Butsurin (Tohoku Univ.)   p. 49 (OA1-5)
Jinzu, Akira (Semiconductor Division2, ULVAC, Inc.)   p. 27 (I4-2)
Jonishi, Takafumi (Kyoto Univ.)   p. 97 (P-5)
Juan, P. C. (Mingchi Univ. of Tech.)   p. 127 (P-20)

K

Kadoshima, Masaru (Selete)   p. 181 (P-47)
Kadoshima, Masaru (Semiconductor Leading Edge technologies, Inc.)   p. 215 (OA3-1)
Kakemura, Yasuto (Meiji Univ.)   p. 73 (OA2-5)
Kaku, Hirotaka (Hiroshima Univ.)   p. 51 (OA1-6)
Kakushima, Kuniyuki (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Kamimuta, Yuuichi (MIRAI-ASET)   p. 219 (OA3-3)
Kamiyama, Satoshi (Semiconductor Leading Edge Technologies Inc)   p. 163 (P-38)
Kamohara, Shiro (Tokyo Metropolitan Univ.)   p. 57 (OB1-3)
Kanasugi, Masayuki (Osaka Univ.)   p. 139 (P-26)
Kanasugi, Masayuki (Osaka Univ.)   p. 149 (P-31)
Kaneta, Chioko (Fujitsu Laboratories Limited)   p. 133 (P-23)
Kano, Hiroyuki (NU Eco Engineering Co., Ltd.)   p. 79 (OB2-2)
Kasamatsu, Akihumi (National Institute of Information and Communications Technology)   p. 63 (OB1-6)
Kasper, E. (Univ. Stuttgart)   p. 3 (K-2)
Kasper, Erich (Univ. Stuttgart)   p. 39 (I5-4)
Kato, Atsushi (Tohoku Univ.)   p. 125 (P-19)
Kato, Mitsuo (Tokai Univ.)   p. 213 (P-63)
Kawamoto, Kiyoshi (Univ. of Tokyo)   p. 61 (OB1-5)
Kawanago, Takamasa (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Kawarada, Hiroshi (Waseda Univ.)   p. 53 (OB1-1)
Kawarada, Hiroshi (Waseda Univ.)   p. 77 (OB2-1)
Kawarada, Hiroshi (Waseda Univ.)   p. 245 (I6-2)
Kawata, Hiroshi (Tohoku Univ.)   p. 141 (P-27)
Khalafalla, Mohammed (NTT)   p. 9 (I1-3)
Kilchytska, Valeriya (Université catholique de Louvain, Microelectronics Lab.)   p. 23 (I3-3)
Kim, Jin-Tae (AUK Corp.)   p. 137 (P-25)
Kim, Sang-Hoon (Electronics and Telecommunications Research Institute)   p. 115 (P-14)
Kimura, Shigeru (Japan Synchrotron Radiation Research Institute)   p. 41 (OA1-1)
Kimura, Yasuo (Tohoku Univ.)   p. 129 (P-21)
Kimura, Yasuo (Tohoku Univ.)   p. 131 (P-22)
Kinoshita, Atsuhiro (Toshiba Corp.)   p. 15 (I2-2)
Kinoshita, Yuta (Yamagata Univ.)   p. 129 (P-21)
Kinoshita, Yuta (Yamagata Univ.)   p. 131 (P-22)
Kirfel, Olaf (Univ. Stuttgart)   p. 39 (I5-4)
Kita, Koji (Univ. of Tokyo)   p. 67 (OA2-2)
Kita, Koji (Univ. of Tokyo)   p. 249 (I7-1)
Kitamura, Tokuhide (Toshiba Semiconductor)   p. 91 (P-2)
Kitano, Naomu (Canon ANELVA Corp.)   p. 223 (OA3-5)
Knoll, Dieter (IHP)   p. 13 (I2-1)
Ko, Joe (Special Technology Division, United Microelectronics Corp.)   p. 207 (P-60)
Kobayashi, Kiyoteru (Tokai Univ.)   p. 213 (P-63)
Koga, Junji (Toshiba Corp.)   p. 15 (I2-2)
Koide, Yasuo (National Inst. for Materials Science)   p. 101 (P-7)
Koide, Yasuo (National Institute for Materials Science (NIMS))   p. 243 (I6-1)
Koizumi, Satoshi (NIMS)   p. 55 (OB1-2)
Koizumi, Satoshi (National Inst. for Materials Science)   p. 101 (P-7)
Kojima, Nobuo (Kanazawa Univ.)   p. 103 (P-8)
Kok, C. W. (City Univ. of Hong Kong)   p. 225 (OA3-6)
Konno, Atsushi (Tohoku Univ.)   p. 135 (P-24)
Kono, Shozo (Tohoku Univ.)   p. 55 (OB1-2)
Kono, Shozo (Tohoku Univ.)   p. 141 (P-27)
Köpke, Klaus (IHP)   p. 187 (P-50)
Kosemura, Daisuke (Meiji Univ.)   p. 73 (OA2-5)
Kosuda, Motomu (Canon ANELVA Corp.)   p. 223 (OA3-5)
Koyama, Masato (Toshiba)   p. 93 (P-3)
Kudo, Yuki (International Christian Univ.)   p. 123 (P-18)
Kumano, Mamoru (Kyushu Univ.)   p. 97 (P-5)
Kumano, Mamoru (Kyushu Univ.)   p. 99 (P-6)
Kung, Chung-Yuan (National Chung Hsing Univ.)   p. 183 (P-48)
Kunii, Yasuo (Hitachi Kokusai Electric Inc.)   p. 161 (P-37)
Kuo, Ping-Sheng (National Taiwan Univ.)   p. 205 (P-59)
Kurokawa, Harushige (Hitachi Kokusai Electric Inc.)   p. 161 (P-37)
Kurps, Rainer (IHP)   p. 187 (P-50)
Kusunoki, Naoki (Toshiba Corp.)   p. 237 (OB3-5)

L

Lee, Cheng-Han (National Taiwan Univ.)   p. 45 (OA1-3)
Lee, M. H (National Taiwan Normal Univ.)   p. 119 (P-16)
Lee, M. H. (National Taiwan Normal Univ.)   p. 107 (P-10)
Lee, M. H. (National Taiwan Normal Univ.)   p. 203 (P-58)
Lee, Min-Hung (National Taiwan Normal Univ.)   p. 155 (P-34)
Lee, S. W. (National Central Univ.)   p. 105 (P-9)
Lee, S. W. (National Central Univ.)   p. 107 (P-10)
Lee, S. W. (National Central Univ.)   p. 119 (P-16)
Lee, Sang-Heung (Electronics and Telecommunications Research Institute)   p. 115 (P-14)
Lee, Sheng-Wei (National Central Univ.)   p. 155 (P-34)
Leon, B. (Física Aplicada, E.T.S.I.I.)   p. 109 (P-11)
Leon, B. (Física Aplicada, E.T.S.I.I.)   p. 111 (P-12)
Liao, S. H. (National Chung Hsing Univ.)   p. 95 (P-4)
Liao, Shu-Hui (ChungChou Inst. of Tech.)   p. 241 (OB3-7)
Lin, C. -H. (National Taiwan Univ.)   p. 205 (P-59)
Lin, C. M. (National Taiwan Univ.)   p. 45 (OA1-3)
Lin, C. T. (Central R&D Division, United Microelectronics Corp. (UMC))   p. 127 (P-20)
Lin, C. T. (Central R&D Division, United Microelectronics Corp. (UMC))   p. 169 (P-41)
Lin, C. Y. (National Chung Hsing Univ.)   p. 95 (P-4)
Lin, Chung-Yi (National Chung Hsing Univ.)   p. 209 (P-61)
Lin, Chung-Yi (National Chung Hsing Univ.)   p. 241 (OB3-7)
Lin, H. (National Chiao Tung Univ.)   p. 45 (OA1-3)
Lin, Hung-Yu (Da-Yeh Univ.)   p. 183 (P-48)
Lin, Jian-Hong (National Chiao Tung Univ.)   p. 189 (P-51)
Lin, Jian-Hong (National Chiao Tung Univ.)   p. 191 (P-52)
Lin, Meng-Hong (National Taipei Univ. of Tech.)   p. 207 (P-60)
Liu, C. H. (Ming Chuan Univ.)   p. 127 (P-20)
Liu, C. H. (Ming Chuan Univ.)   p. 169 (P-41)
Liu, C. W. (National Taiwan Univ.)   p. 45 (OA1-3)
Liu, C. W. (National Taiwan Univ.)   p. 119 (P-16)
Liu, C. W. (National Taiwan Univ.)   p. 205 (P-59)
Liu, Chee-Wee (National Taiwan Univ.)   p. 155 (P-34)
Loo, Roger (IMEC)   p. 47 (OA1-4)
Loo, Roger (IMEC)   p. 239 (OB3-6)
Lu, Joan-Ping (Texas Instruments)   p. 239 (OB3-6)

M

Ma, G. H. (Central R&D Division, United Microelectronics Corp. (UMC))   p. 127 (P-20)
Ma, G. H. (Central R&D Division, United Microelectronics Corp. (UMC))   p. 169 (P-41)
Machkaoutsan, Vladimir (ASM Belgium)   p. 239 (OB3-6)
Maeda, Yoshihito (Kyoto Univ.)   p. 37 (I5-3)
Maeda, Yoshihito (Kyoto Univ.)   p. 97 (P-5)
Maeda, Yoshihito (Kyoto Univ.)   p. 99 (P-6)
Maezawa, Koichi (Univ. of Toyama)   p. 121 (P-17)
Maezawa, Koichi (Univ. of Toyama)   p. 171 (P-42)
Mahata, Chandreswar (Indian Inst. of Tech., Kharagpur)   p. 113 (P-13)
Mahata, Chandreswar (Indian Inst. of Tech., Kharagpur)   p. 167 (P-40)
Maida, Osamu (Osaka Univ.)   p. 139 (P-26)
Maida, Osamu (Osaka Univ.)   p. 143 (P-28)
Maida, Osamu (Osaka Univ.)   p. 145 (P-29)
Maida, Osamu (Osaka Univ.)   p. 149 (P-31)
Maida, Osamu (Osaka Univ.)   p. 159 (P-36)
Maikap, S. (Chang Gung Univ.)   p. 203 (P-58)
Maiti, C. K. (Indian Inst. of Tech., Kharagpur)   p. 167 (P-40)
Maiti, Chinmay (Indian Inst. of Tech., Kharagpur)   p. 197 (P-55)
Maiti, Chinmay K. (Indian Inst. of Tech., Kharagpur)   p. 113 (P-13)
Maiti, Tapas (Indian Inst. of Tech., Kharagpur)   p. 197 (P-55)
Maki, Tasuku (Waseda Univ.)   p. 77 (OB2-1)
Manera, Leandro Tiago (State Univ. of Campinas)   p. 185 (P-49)
Martens, Koen (IMEC)   p. 25 (I4-1)
Maruyama, Shigetoshi (Nagoya Univ.)   p. 79 (OB2-2)
Masuzawa, Tomoaki (International Christian Univ.)   p. 123 (P-18)
Matsubara, Hiroshi (Univ. of Tokyo)   p. 65 (OA2-1)
Matsui, Toshiaki (National Institute of Information and Communications Technology)   p. 63 (OB1-6)
Matsui, Toshiaki (National Institute of Information and Communications Technology)   p. 83 (OB2-4)
Matsumoto, Mitsutaka (Tohoku Univ.)   p. 117 (P-15)
Mescot, Xavier (IMEP, INPG)   p. 43 (OA1-2)
Michez, L. (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille)   p. 29 (I4-3)
Mimura, Takashi (National Institute of Information and Communications Technology)   p. 63 (OB1-6)
Minami, Takashi (Canon ANELVA Corp.)   p. 223 (OA3-5)
Miura, Makoto (Central Research Laboratory, Hitachi Ltd.)   p. 201 (P-57)
Miura, Makoto (Central Research Laboratory, Hitachi Ltd.)   p. 229 (OB3-1)
Miya, Hironobu (Hitachi Kokusai Electric Inc.)   p. 129 (P-21)
Miya, Hironobu (Hitachi Kokusai Electric Inc.)   p. 131 (P-22)
Miyamoto, Eiji (Sekisui Chemicals Co. Ltd)   p. 117 (P-15)
Miyao, Masanobu (Kyushu Univ.)   p. 91 (P-2)
Miyao, Masanobu (Kyushu Univ.)   p. 97 (P-5)
Miyao, Masanobu (Kyushu Univ.)   p. 99 (P-6)
Miyatake, Hidetaka (Osaka Univ.)   p. 143 (P-28)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 51 (OA1-6)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 181 (P-47)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 215 (OA3-1)
Miyazaki, Seiichi (Hiroshima Univ.)   p. 227 (OA3-7)
Mizubayashi, Wataru (MIRAI-ASRC, AIST)   p. 219 (OA3-3)
Mizuno, Eiichi (Institute for Semiconductor Technologies, ULVAC, Inc.)   p. 27 (I4-2)
Mizushima, Ichiro (Toshiba Corp.)   p. 237 (OB3-5)
Mochizuki, Shogo (Nagoya Univ.)   p. 41 (OA1-1)
Moraru, Daniel (Shizuoka Univ.)   p. 11 (I1-4)
Mori, Kaoru (NEC)   p. 235 (OB3-4)
Mori, Masayuki (Univ. of Toyama)   p. 121 (P-17)
Mori, Masayuki (Univ. of Toyama)   p. 171 (P-42)
Morimoto, Yukihiro (R&D Center, Ushio Inc.)   p. 49 (OA1-5)
Morioka, Jun (Toshiba Semiconductor)   p. 91 (P-2)
Morita, Mizuho (Osaka Univ.)   p. 179 (P-46)
Munetaka, Yuki (Hiroshima Univ.)   p. 227 (OA3-7)
Muraguchi, Masakazu (Univ. of Tsukuba)   p. 59 (OB1-4)
Murakami, Hideki (Hiroshima Univ.)   p. 51 (OA1-6)
Murakami, Hideki (Hiroshima Univ.)   p. 181 (P-47)
Murakami, Hideki (Hiroshima Univ.)   p. 215 (OA3-1)
Murakami, Hideki (Hiroshima Univ.)   p. 227 (OA3-7)
Murata, Kazunori (Univ. of Toyama)   p. 121 (P-17)
Murota, Junichi (Tohoku Univ.)   p. 71 (OA2-4)
Murota, Junichi (Tohoku Univ.)   p. 151 (P-32)
Murota, Junichi (Tohoku Univ.)   p. 153 (P-33)
Murota, Junichi (Res. Inst. Electr. Comm., Tohoku Univ.)   p. 161 (P-37)

N

Nabatame, Toshihide (MIRAI-ASET)   p. 219 (OA3-3)
Nabatame, Toshihide (MIRAI-ASET)   p. 221 (OA3-4)
Nakagawa, Gou (Kyushu Univ.)   p. 199 (P-56)
Nakagawa, Takashi (NEC)   p. 235 (OB3-4)
Nakai, Takahiro (Osaka Univ.)   p. 145 (P-29)
Nakajima, Setsuo (Sekisui Chemicals Co. Ltd)   p. 117 (P-15)
Nakamura, Jun (Univ. of Electro-Communications)   p. 75 (OA2-6)
Nakane, Ryosho (Univ. of Tokyo)   p. 65 (OA2-1)
Nakano, Takuya (Tohoku Univ.)   p. 125 (P-19)
Nakashima, Hiroshi (Kyushu Univ.)   p. 33 (I5-1)
Nakatsuka, Osamu (Nagoya Univ.)   p. 31 (I4-4)
Nakatsuka, Osamu (Nagoya Univ.)   p. 41 (OA1-1)
Nakatsuka, Osamu (Nagoya Univ.)   p. 85 (OB2-5)
Nakatsuru, Junko (Canon ANELVA Corp.)   p. 235 (OB3-4)
Nakazawa, Hideki (Hirosaki Univ.)   p. 135 (P-24)
Nara, Yasuo (Semiconductor Leading Edge Technologies Inc)   p. 163 (P-38)
Nara, Yasuo (Selete)   p. 181 (P-47)
Nara, Yasuo (Semiconductor Leading Edge technologies, Inc.)   p. 215 (OA3-1)
Nara, Yasuo (Selete)   p. 253 (I7-3)
Narita, Yuzuru (Kyushu Inst. of Tech.)   p. 135 (P-24)
Narumi, Kazumasa (Japan Atomic Energy Agency)   p. 97 (P-5)
Natori, Akiko (Univ. of Electro-Communications)   p. 75 (OA2-6)
Natori, Kenji (Univ. of Tsukuba)   p. 5 (I1-1)
Nguyen, Ngoc Duy (IMEC)   p. 47 (OA1-4)
Nishi, Kenichi (NEC)   p. 35 (I5-2)
Nishiguchi, Katsuhiko (NTT)   p. 9 (I1-3)
Nishikawa, Masashi (Univ. of Tokyo)   p. 65 (OA2-1)
Nishimura, Tomonori (Univ. of Tokyo)   p. 67 (OA2-2)
Nishimura, Tomonori (Univ. of Tokyo)   p. 249 (I7-1)
Niwano, Michio (Tohoku Univ.)   p. 129 (P-21)
Niwano, Michio (Tohoku Univ.)   p. 131 (P-22)
Nomura, Hideyuki (Univ. of Tokyo)   p. 249 (I7-1)
Noya, Atsushi (Kitami Inst. of Tech.)   p. 165 (P-39)
Numata, Toshinori (MIRAI-ASET)   p. 231 (OB3-2)
Nunoshige, Yu (Shibaura Inst. of Tech.)   p. 221 (OA3-4)
Nuryadi, Ratno (Shizuoka Univ.)   p. 11 (I1-4)

O

O'Neill, Anthony (Newcastle Univ.)   p. 21 (I3-2)
Oda, Fumihiko (R&D Center, Ushio Inc.)   p. 49 (OA1-5)
Oda, Katsuya (Central Research Laboratory, Hitachi Ltd.)   p. 201 (P-57)
Oehme, Michael (Univ. Stuttgart)   p. 39 (I5-4)
Ogawa, Masaki (Nagoya Univ.)   p. 31 (I4-4)
Ogawa, Masaki (Nagoya Univ.)   p. 41 (OA1-1)
Ogawa, Masaki (Nagoya Univ.)   p. 85 (OB2-5)
Ogura, Atsushi (Meiji Univ.)   p. 73 (OA2-5)
Ohashi, Hiroyuki (Tokyo Univ. of Agric. and Technol.)   p. 83 (OB2-4)
Ohashi, Keishi (NEC)   p. 35 (I5-2)
Ohishi, Tomoji (Shibaura Inst. of Tech.)   p. 221 (OA3-4)
Ohmi, Tadahiro (Tohoku Univ.)   p. 73 (OA2-5)
Ohta, Akio (Hiroshima Univ.)   p. 181 (P-47)
Ohta, Akio (Hiroshima Univ.)   p. 215 (OA3-1)
Ohta, Akio (Hiroshima Univ.)   p. 227 (OA3-7)
Okada, Tatsuya (Hiroshima Univ.)   p. 51 (OA1-6)
Okamoto, Daisuke (NEC)   p. 35 (I5-2)
Okamoto, Kouichi (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Okamoto, Shintaro (Toshiba Corp.)   p. 237 (OB3-5)
Okano, Ken (International Christian Univ.)   p. 123 (P-18)
Okumura, Tsugunori (Tokyo Metropolitan Univ.)   p. 57 (OB1-3)
Olbrechts, Benoit (Université catholique de Louvain, Microwave Lab.)   p. 23 (I3-3)
Olive-Mendez, S. (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille)   p. 29 (I4-3)
Ono, Yukinori (NTT)   p. 9 (I1-3)
Onojima, Norio (National Institute of Information and Communications Technology)   p. 63 (OB1-6)
Oshio, Takeshi (Osaka Prefecture Univ.)   p. 175 (P-44)
Ota, Hiroyuki (MIRAI-ASRC, AIST)   p. 219 (OA3-3)
Ota, Hiroyuki (MIRAI-ASRC, AIST)   p. 221 (OA3-4)

P

Peng, C. -Y. (National Taiwan Univ.)   p. 205 (P-59)
Perng, Dung-Ching (National Cheng Kung Univ.)   p. 173 (P-43)
Pourtois, Geoffrey (IMEC)   p. 25 (I4-1)

R

Raskin, Jean-Pierre (Université catholique de Louvain, Microwave Lab.)   p. 23 (I3-3)
Rodriguez, R. (Física Aplicada, E.T.S.I.I.)   p. 109 (P-11)
Rolo, A. (Universidade do Minho, Campus de Gualtar)   p. 111 (P-12)
Rubaldo, Laurent (STMicroelectronics)   p. 43 (OA1-2)
Rucker, Holger (IHP)   p. 13 (I2-1)

S

Sadoh, Taizoh (Kyushu Univ.)   p. 91 (P-2)
Sadoh, Taizoh (Kyushu Univ.)   p. 97 (P-5)
Sadoh, Taizoh (Kyushu Univ.)   p. 99 (P-6)
Saha, Arup (Synopsys (India) Pvt. Ltd.)   p. 197 (P-55)
Saito, Eiji (Tohoku Univ.)   p. 135 (P-24)
Saito, Ichitaro (Univ. of Cambridge)   p. 123 (P-18)
Saito, Mitsufumi (Univ. of Toyama)   p. 171 (P-42)
Saitoh, Yuji (Japan Atomic Energy Agency)   p. 139 (P-26)
Saitoh, Yuji (Japan Atomic Energy Agency)   p. 149 (P-31)
Sakai, Akira (Osaka Univ.)   p. 31 (I4-4)
Sakai, Akira (Osaka Univ.)   p. 41 (OA1-1)
Sakai, Akira (Osaka Univ.)   p. 85 (OB2-5)
Sakamoto, Shinya (Osaka Prefecture Univ.)   p. 175 (P-44)
Sakata, Osami (Japan Synchrotron Radiation Research Institute)   p. 41 (OA1-1)
Sakuraba, Masao (Tohoku Univ.)   p. 71 (OA2-4)
Sakuraba, Masao (Tohoku Univ.)   p. 151 (P-32)
Sakuraba, Masao (Tohoku Univ.)   p. 153 (P-33)
Sakuraba, Masao (Res. Inst. Electr. Comm., Tohoku Univ.)   p. 161 (P-37)
Samukawa, Seiji (Tohoku Univ.)   p. 49 (OA1-5)
Sano, Atsushi (Hitachi Kokusai Electric Inc.)   p. 163 (P-38)
Sasada, Takashi (Univ. of Tokyo)   p. 65 (OA2-1)
Sasaki, Kimihiro (Kanazawa Univ.)   p. 103 (P-8)
Sato, Hidenori (Hitachi, Ltd.)   p. 229 (OB3-1)
Sato, Masaru (Kitami Inst. of Tech.)   p. 165 (P-39)
Sato, Soushi (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Schimizu, Tatsuo (Toshiba)   p. 93 (P-3)
Sen, Banani (City Univ. of Hong Kong)   p. 225 (OA3-6)
Senda, Takeshi (Covalent Materials Corp.)   p. 41 (OA1-1)
Seo, Takahiro (Tohoku Univ.)   p. 153 (P-33)
Serra, C. (Universidade de Vigo)   p. 109 (P-11)
Serra, C. (Universidade de Vigo)   p. 111 (P-12)
Serra, J. (Física Aplicada, E.T.S.I.I.)   p. 109 (P-11)
Shen, K.-W. (National Taiwan Normal Univ.)   p. 107 (P-10)
Shen, K.-W. (National Taiwan Normal Univ.)   p. 203 (P-58)
Shibahara, Kentaro (Hiroshima Univ.)   p. 147 (P-30)
Shim, Kyu-Hwan (Chonbuk National Univ.)   p. 137 (P-25)
Shim, Kyu-Hwan (Chonbuk National Univ.)   p. 211 (P-62)
Shimamoto, Hiromi (Renesas Northern Japan Semiconductor, Inc.)   p. 201 (P-57)
Shimamune, Yousuke (Fujitsu Laboratories Ltd.)   p. 17 (I2-3)
Shimura, Takayoshi (Osaka Univ.)   p. 223 (OA3-5)
Shindo, Daisuke (Osaka Prefecture Univ.)   p. 177 (P-45)
Shiraishi, Kenji (Univ. of Tsukuba)   p. 59 (OB1-4)
Shiraki, Yoshifumi (International Christian Univ.)   p. 123 (P-18)
Simoen, Eddy (IMEC)   p. 239 (OB3-6)
Song, Jaeyeol (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Song, Minghui (NIMS)   p. 147 (P-30)
Suda, Yoshiyuki (Tokyo Univ. of Agric. and Technol.)   p. 83 (OB2-4)
Suemitsu, Maki (Tohoku Univ.)   p. 117 (P-15)
Suemitsu, Maki (Tohoku Univ.)   p. 135 (P-24)
Sugahara, Satoshi (Tokyo Inst. of Tech.)   p. 65 (OA2-1)
Sugahara, Satoshi (Tokyo Inst. of Tech.)   p. 233 (OB3-3)
Sugawa, Shigetoshi (Tohoku Univ.)   p. 73 (OA2-5)
Sugii, Nobuyuki (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Sugiyama, Naoharu (MIRAI-ASET)   p. 69 (OA2-3)
Sugiyama, Naoharu (MIRAI-ASET)   p. 231 (OB3-2)
Sulima, T. (Universitaet der Bundeswehr Muenchen)   p. 109 (P-11)
Sun, Cheng-Yen (National Chiao Tung Univ.)   p. 189 (P-51)
Suzuki, Sho (Univ. of Tokyo)   p. 249 (I7-1)

T

Tabe, Michiharu (Shizuoka Univ.)   p. 11 (I1-4)
Tachi, Kiichi (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Takada, Yukihiro (Univ. of Tsukuba)   p. 59 (OB1-4)
Takagi, Shin-ichi (Univ. of Tokyo)   p. 65 (OA2-1)
Takagi, Shin-ichi (Univ. of Tokyo, MIRAI-ASRC)   p. 69 (OA2-3)
Takagi, Shin-ichi (Univ. of Tokyo)   p. 231 (OB3-2)
Takagi, Shin-ichi (Univ. of Tokyo)   p. 233 (OB3-3)
Takahashi, Norihiko (Fujitsu Laboratories Limited)   p. 133 (P-23)
Takahashi, Seiichi (Semiconductor Division2, ULVAC, Inc.)   p. 27 (I4-2)
Takahashi, Toshitake (Univ. of Tokyo)   p. 249 (I7-1)
Takahashi, Yasuo (Hokkaido Univ.)   p. 9 (I1-3)
Takahashi, Yoichi (Tokyo Univ. of Agric. and Technol.)   p. 83 (OB2-4)
Takashina, Kei (NTT)   p. 9 (I1-3)
Takayanagi, Hidenori (Waseda Univ.)   p. 53 (OB1-1)
Takeda, Yukiharu (Japan Atomic Energy Agency)   p. 139 (P-26)
Takeda, Yukiharu (Japan Atomic Energy Agency)   p. 149 (P-31)
Takenaka, Mitsuru (Univ. of Tokyo)   p. 65 (OA2-1)
Takenaka, Mitsuru (Univ. of Tokyo)   p. 233 (OB3-3)
Takeuchi, Shotaro (Nagoya Univ.)   p. 31 (I4-4)
Takeuchi, Shotaro (Nagoya Univ.)   p. 85 (OB2-5)
Takeyama, Mayumi B. (Kitami Inst. of Tech.)   p. 165 (P-39)
Tambo, Toyokazu (Univ. of Toyama)   p. 121 (P-17)
Tamura, Naoyoshi (Fujitsu Laboratories Ltd.)   p. 17 (I2-3)
Tan, Wei-Shi (Nanjing Univ. of Science and Tech.)   p. 195 (P-54)
Tanabe, Akihito (NEC)   p. 235 (OB3-4)
Tanabe, Satoshi (Univ. of Tokyo)   p. 233 (OB3-3)
Tanaka, Masanori (Kyushu Univ.)   p. 91 (P-2)
Tanno, Hiroki (Tohoku Univ.)   p. 151 (P-32)
Taoka, Noriyuki (MIRAI-ASRC)   p. 69 (OA2-3)
Tatsch, Peter J. (State Univ. of Campinas)   p. 185 (P-49)
Tatsumi, Toru (NEC)   p. 235 (OB3-4)
Teraji, Tokuyuki (National Inst. for Materials Science)   p. 101 (P-7)
Teraji, Tokuyuki (National Inst. for Materials Science)   p. 143 (P-28)
Teramoto, Akinobu (Tohoku Univ.)   p. 73 (OA2-5)
Teraoka, Yuden (Japan Atomic Energy Agency)   p. 125 (P-19)
Terashima, Koichi (NEC)   p. 235 (OB3-4)
Thanh, V. Le (CRMCN - CNRS, Univ. of Mediterranean, Luminy, Marseille)   p. 29 (I4-3)
Thomas, Shawn (ASM America)   p. 239 (OB3-6)
Tillack, Bernd (IHP)   p. 13 (I2-1)
Tillack, Bernd (IHP)   p. 71 (OA2-4)
Tillack, Bernd (IHP)   p. 151 (P-32)
Tillack, Bernd (IHP)   p. 187 (P-50)
Togashi, Hideaki (Tohoku Univ.)   p. 125 (P-19)
Tominari, Tatsuya (Hitachi, Ltd.)   p. 229 (OB3-1)
Toriumi, Akira (Univ. of Tokyo)   p. 67 (OA2-2)
Toriumi, Akira (Univ. of Tokyo)   p. 219 (OA3-3)
Toriumi, Akira (Univ. of Tokyo)   p. 221 (OA3-4)
Toriumi, Akira (Univ. of Tokyo)   p. 249 (I7-1)
Toyoda, Eiji (Covalent Materials Corp.)   p. 41 (OA1-1)
Toyoshima, Yasutake (Energy Technology Research Institute)   p. 117 (P-15)
Tsutsui, Kazuo (Tokyo Inst. of Tech.)   p. 217 (OA3-2)
Tu, Chia-Hao (National Taipei Univ. of Tech.)   p. 207 (P-60)

U

Uchikoshi, Junichi (Osaka Univ.)   p. 179 (P-46)
Udeda, Koji (Kyushu Univ.)   p. 97 (P-5)
Ueda, Koji (Kyushu Univ.)   p. 99 (P-6)
Uehara, Tsuyoshi (Sekisui Chemicals Co. Ltd)   p. 117 (P-15)
Umezawa, Hitoshi (AIST)   p. 53 (OB1-1)

V

Van Elshocht, Sven (IMEC)   p. 25 (I4-1)
Verheyen, Peter (IMEC)   p. 239 (OB3-6)
Vissouvanadin, Bertrand (IMEC)   p. 239 (OB3-6)
Vovk, Yaroslav (Institute of Semiconductor Physics)   p. 23 (I3-3)

W

Wakui, Sadakazu (Univ. of Electro-Communications)   p. 75 (OA2-6)
Wang, An-Bang (National Taiwan Univ.)   p. 87 (OB2-6)
Wang, Dong (Kyushu Univ.)   p. 33 (I5-1)
Wang, Ke-Yao (National Taiwan Univ.)   p. 195 (P-54)
Wang, Mu-Chun (Minghsin Univ. of Science and Tech.)   p. 207 (P-60)
Wang, W.-C. (National Chung Hsing Univ.)   p. 107 (P-10)
Wang, W.-C. (National Chung Hsing Univ.)   p. 203 (P-58)
Wang, Wei–Ching (National Chung Hsing Univ.)   p. 241 (OB3-7)
Wang, Wenwu (MIRAI-ASRC, AIST)   p. 219 (OA3-3)
Washio, Katsuyoshi (Central Research Laboratory, Hitachi Ltd.)   p. 201 (P-57)
Washio, Katsuyoshi (Central Research Laboratory, Hitachi Ltd.)   p. 229 (OB3-1)
Watanabe, Heiji (Osaka Univ.)   p. 223 (OA3-5)
Werner, Jens (Univ. Stuttgart)   p. 39 (I5-4)
Wise, Rick (Texas Instruments)   p. 239 (OB3-6)
Wong, Hei (City Univ. of Hong Kong)   p. 225 (OA3-6)
Wu, Ssu-Han (Special Technology Division, United Microelectronics Corp.)   p. 207 (P-60)

Y

Yamada, Takatoshi (National Institute of Advanced Industrial Science And Technology)   p. 123 (P-18)
Yamaguchi, Harunaka (Osaka Univ.)   p. 159 (P-36)
Yamaguchi, Hisato (International Christian Univ.)   p. 123 (P-18)
Yamakawa, Koji (Katagiri Engineering Co., Ltd.)   p. 79 (OB2-2)
Yamamoto, Takashi (Osaka Univ.)   p. 149 (P-31)
Yamamoto, Toyoji (MIRAI-ASET)   p. 69 (OA2-3)
Yamamoto, Yoshihisa (Tohoku Univ.)   p. 125 (P-19)
Yamamoto, Yuji (IHP)   p. 13 (I2-1)
Yamamoto, Yuji (IHP)   p. 187 (P-50)
Yamasaki, Kosuke (Meiji Univ.)   p. 73 (OA2-5)
Yamasaki, Takahiro (Fujitsu Laboratories Limited)   p. 133 (P-23)
Yamashita, Yoshimi (MIRAI-ASET)   p. 69 (OA2-3)
Yamauchi, Takashi (Toshiba Corp.)   p. 15 (I2-2)
Yamazaki, Masahiro (Nagoya Univ.)   p. 85 (OB2-5)
Yang, Bingliang (City Univ. of Hong Kong)   p. 225 (OA3-6)
Yang, Chih-Hsiang (National Chiao Tung Univ.)   p. 191 (P-52)
Yang, Jeon-Wook (Chonbuk National Univ.)   p. 211 (P-62)
Yang, L. (MIT)   p. 19 (I3-1)
Yara, Takuya (Sekisui Chemicals Co. Ltd)   p. 117 (P-15)
Yasui, Kanji (Nagaoka Univ. of Tech.)   p. 135 (P-24)
Yasutake, Nobuaki (Toshiba Corp.)   p. 237 (OB3-5)
Ye, Peide D. (Purdue Univ.)   p. 251 (I7-2)
Yeh, Jia-Bin (National Cheng Kung Univ.)   p. 173 (P-43)
Yeo, Yee-Chia (National Univ. of Singapore)   p. 7 (I1-2)
Yohara, Keiichiro (Waseda Univ.)   p. 53 (OB1-1)
Yokogawa, Takashi (Res. Inst. Electr. Comm., Tohoku Univ.)   p. 161 (P-37)
Yokoyama, Hisashi (Tokai Univ.)   p. 213 (P-63)
Yoneda, Kazufumi (Osaka Univ.)   p. 179 (P-46)
Yorimoto, Takuya (Hiroshima Univ.)   p. 51 (OA1-6)
Yoshida, Tetsuya (Meiji Univ.)   p. 73 (OA2-5)
Yoshida, Yoshinori (Hitachi, Ltd.)   p. 229 (OB3-1)
Yoshigoe, Akitaka (Japan Atomic Energy Agency)   p. 125 (P-19)
Yoshimura, Takeshi (Osaka Prefecture Univ.)   p. 175 (P-44)
Yoshimura, Takeshi (Osaka Prefecture Univ.)   p. 177 (P-45)
Yoshinaga, Hiromichi (Hiroshima Univ.)   p. 181 (P-47)
Yoshinaga, Hiromichi (Hiroshima Univ.)   p. 215 (OA3-1)
Yougauchi, Ryo (Hiroshima Univ.)   p. 227 (OA3-7)
Yu, C. -Y. (National Taiwan Univ.)   p. 45 (OA1-3)
Yukawa, Katsunori (Nagoya Univ.)   p. 41 (OA1-1)

Z

Zaima, Shigeaki (Nagoya Univ.)   p. 31 (I4-4)
Zaima, Shigeaki (Nagoya Univ.)   p. 41 (OA1-1)
Zaima, Shigeaki (Nagoya Univ.)   p. 85 (OB2-5)
Zhou, Ying (Kanazawa Univ.)   p. 103 (P-8)
Zoccal, Leonardo Breseghello (State Univ. of Campinas)   p. 185 (P-49)