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2022ǯ1·î29Æü(ÅÚ)

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2022ǯ1·î28Æü(¶â)

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¥»¥Ã¥·¥ç¥ó 1  ¥Á¥å¡¼¥È¥ê¥¢¥ë¡¿´ðÄ´¹Ö±é
Æü»þ: 2022ǯ1·î28Æü(¶â) 9:10 - 11:00
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: ±º²¬ ¹Ô¼£ (NAIST), ²¬ÅÄ ·ò¼£ (¥¿¥ï¡¼ ¥Ñ¡¼¥È¥Ê¡¼¥º ¥»¥ß¥³¥ó¥À¥¯¥¿¡¼)

1-1 (»þ´Ö: 9:10 - 10:10)
Âê̾¥¤¥ó¥Æ¥ê¥¸¥§¥ó¥ÈÀ©¸æ¤Ë¤è¤ëȾƳÂÎÀ½Â¤ÁõÃ֤Υ¤¥Î¥Ù¡¼¥·¥ç¥ó
Ãø¼Ô*¼é²° ¹ä (Åìµþ¥¨¥ì¥¯¥È¥í¥ó)
TitleInnovation of Semiconductor Manufacturing Equipment by Intelligent control
Author*Tsuyoshi Moriya (Tokyo Electron)
Pagepp. 1 - 2

1-2 (»þ´Ö: 10:10 - 11:00)
Âê̾(´ðÄ´¹Ö±é) ÆüËܤǽé¤á¤Æ¤Î¾¦ÍÑ¥²¡¼¥È·¿Î̻ҥ³¥ó¥Ô¥å¡¼¥¿
Ãø¼Ô*ÃæÌî Âç¼ù (ÆüËÜIBM)
Title(Keynote Speech) The First Quantum Computer Installed in Japan
Author*Daiju Nakano (IBM Research - Tokyo)
Pagepp. 3 - 4


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¥»¥Ã¥·¥ç¥ó 2  MRAM¡¦¥Õ¥©¥È¥Ë¥¯¥¹ºàÎÁ
Æü»þ: 2022ǯ1·î28Æü(¶â) 11:20 - 12:20
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: ß·Ìî ·ûÂÀϺ (ÅìµþÅÔ»ÔÂç)

2-1 (»þ´Ö: 11:20 - 11:40)
Âê̾MgOÃæ¤Î㳦¤¬STT-MRAM¤ÎFe/MgO¤Î³¦ÌÌ¿âľ¼§µ¤°ÛÊýÀ­¤ËÍ¿¤¨¤ë±Æ¶Á¤ÎÍýÏÀŪ¸¦µæ
Ãø¼Ô*¿¹²¼ ²ÂÍ´ (̾Âç), ¸¶Åè ÍDzð (ÃÞÇÈÂç), ÀöÊ¿ ¾»¹¸ (̾Âç), ±óÆ£ ůϺ (ÅìËÌÂç), ÇòÀÐ ¸­Æó (̾Âç)
TitleEffect of Grain Boundaries in MgO on Interfacial Perpendicular Magnetic Anisotropy Energy at Fe/MgO Interface in STT-MRAM
Author*Keisuke Morishita (Nagoya Univ.), Yosuke Harashima (Univ. of Tsukuba), Masaaki Araidai (Nagoya Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.)
Pagepp. 5 - 9

2-2 (»þ´Ö: 11:40 - 12:00)
Âê̾In2O3·Ï¶áÀÖ³°°èÆ©ÌÀƳÅÅË쥲¡¼¥È¤òÍѤ¤¤¿ InGaAs PhotoFETs¤ÎÆ°ºî¼Â¾Ú
Ãø¼Ô*ÂçÀÐ ÏÂÌÀ (ÅìµþÍý²ÊÂç), ¸ñÅÄ ¿ò, À¶¿å Å´»Ê, Àаæ ͵Ƿ, Ä¥ ʸ³¾ (»ºÁí¸¦), ±óÆ£ Áï, Æ£Âå Çîµ­ (ÅìµþÍý²ÊÂç), Á°ÅÄ Ã¤Ïº (»ºÁí¸¦)
TitleDemonstration of InGaAs PhotoFETs with In2O3-based SWIR Transparent Conductive Oxide Gate
Author*Kazuaki Oishi (Tokyo Univ. of Science), Takashi Koida, Tetsuji Shimizu, Hiroyuki Ishii, Wen-Hsin Chang (AIST), Akira Endoh, Hiroki Fujishiro (Tokyo Univ. of Science), Tatsuro Maeda (AIST)
Pagepp. 11 - 16

2-3 (»þ´Ö: 12:00 - 12:20)
Âê̾¸÷µÛ¼ýÁؤòÍ­¤¹¤ëÀбѴðÈľåGeSnºÙÀþ¤Î¥ì¡¼¥¶¡¼ÍÏÍ»·ë¾½²½
Ãø¼Ô*ÅÄÊ¥ ľ¿Í, »³¸ý ο²í, ¶áÆ£ ²íÅÍ (ºåÂç), Ô¢µÈ ˾·î (¥¢¥ë¥Ð¥Ã¥¯Ì¤Íèµ»½Ñ¶¨Æ¯¸¦µæ½ê), ºÙ°æ Âî¼£ (´ØÀ¾³Ø±¡Âç), ¾®ÎÓ Âó¿¿, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç)
TitleLaser-induced Liquid-phase Crystallization of GeSn Wires on Quartz Substrate Covered with Light-absorbing Layer
Author*Naoto Tabuchi, Ryoga Yamaguchi, Masato Kondoh (Osaka Univ.), Mizuki Kuniyoshi (ULVAC-Osaka Univ. Joint Research Laboratory for Future Technology), Takuji Hosoi (Kwansei Gakuin Univ.), Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Pagepp. 17 - 22


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¥»¥Ã¥·¥ç¥ó 3  ´ë²è¥»¥Ã¥·¥ç¥ó
Æü»þ: 2022ǯ1·î28Æü(¶â) 15:00 - 17:00
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: ÃæÄÍ Íý (̾Âç), ´äß· ÏÂÌÀ (Åìµþ¥¨¥ì¥¯¥È¥í¥ó), Ï¡¾Â δ (ÃÞÇÈÂç), °²¸¶ ÍÎ»Ê (KOKUSAI ELECTRIC)

3-1
Âê̾(¥Ñ¥Í¥ë¥Ç¥£¥¹¥«¥Ã¥·¥ç¥ó) ȾƳÂÎ¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹»º¶È¡¦¹©³Ø¤Î¸½ºß¤È¾­ÍèŸ˾
Ãø¼Ô¹Ö±é¡¦¥Ñ¥Í¥é¡¼: ÄÔ¼ ³Ø (±Á¸¶À½ºî½ê), Ω´ä ·òÆó (¥¿¥ï¡¼¥Ñ¡¼¥È¥Ê¡¼¥º¥»¥ß¥³¥ó¥À¥¯¥¿¡¼), ÀÄÅÖ ¤Ê¤Û¤ß (¥Þ¥¤¥¯¥í¥ó¥á¥â¥ê¥¸¥ã¥Ñ¥ó), ¹¾¸ý Çî¿Ã (¥ß¥é¥¤¥º¥Æ¥¯¥Î¥í¥¸¡¼¥º)
Title(Panel Discussion) Present and Future Prospects of Semiconductor Electronics Industry and Engineering
AuthorSpeech & Panelist: Manabu Tsujimura (EBARA), Kenji Tateiwa (Tower Partners Semiconductor), Nahomi Aoto (Micron Memory Japan, K.K.), Hiroomi Eguchi (MIRISE Technologies)


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¥»¥Ã¥·¥ç¥ó 4  ¥¨¥Þ¡¼¥¸¥ó¥°ºàÎÁ¡¦¥Ç¥Ð¥¤¥¹
Æü»þ: 2022ǯ1·î28Æü(¶â) 17:10 - 19:10
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: 𱩠Àµ¾¼ (ÅìÂç), µÜùõ À¿°ì (̾Âç)

4-1 (»þ´Ö: 17:10 - 17:40)
Title(Invited Speech) Epitaxial Ge Virtual Substrates and Ge-on-Nothing on Si: Comparison of Material Properties
AuthorRoger Loo, Clément Porret, Valérie Depauw, Han Han, Emma Vecchio, Mathias Berciano, Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout (Imec)
Pagepp. 23 - 28

4-2 (»þ´Ö: 17:40 - 18:10)
Âê̾(¾·ÂÔ¹Ö±é) ¹âÌ©Åٰۼﵡǽ½¸ÀѤΤ¿¤á¤ÎÀèü3DÀÑÁص»½Ñ
Ãø¼Ô*ÀîÌî Ï¢Ìé (ÅìÂç)
Title(Invited Speech) Advanced 3D Stacking Technology for High Density Heterogeneous Integration
Author*Masaya Kawano (Univ. of Tokyo)
Pagepp. 29 - 33

4-3 (»þ´Ö: 18:10 - 18:40)
Âê̾(¾·ÂÔ¹Ö±é) »À²½ÊªºàÎÁ¤Ë¤è¤ë»°¼¡¸µ½¸ÀÑ¥á¥â¥ê¥Ç¥Ð¥¤¥¹¤Î¿·Å¸³«
Ãø¼Ô*¾®ÎÓ Àµ¼£, Jixuan Wu, Fei Mo, ¹¹²° ÂóºÈ, Ê¿ËÜ ½ÓϺ (ÅìÂç), ±ÛÃÒ ¸µÎ´ (¿À¸ÍÀ½¹Ý½ê), ¸åÆ£ ͵»Ë (¥³¥Ù¥ë¥³²Ê¸¦)
Title(Invited Speech) 3D Integrated Memory Devices Enabled by Oxide Semiconductor
Author*Masaharu Kobayashi, Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo), Mototaka Ochi (Kobe Steel), Hiroshi Goto (Kobelco Research Institute)
Pagepp. 35 - 39

4-4 (»þ´Ö: 18:40 - 19:10)
Âê̾(¾·ÂÔ¹Ö±é) £²¼¡¸µÁؾõʪ¼Á¤Î¿·µ¡Ç½¥Ç¥Ð¥¤¥¹¤Ø¤ÎŸ³«
Ãø¼Ô*Ĺ¼® ¹¸Êå (ÅìÂç)
Title(Invited Speech) Toward Novel Functional Devices Based on 2D Layered Materials
Author*Kosuke Nagashio (Univ. of Tokyo)
Pagepp. 41 - 44



2022ǯ1·î29Æü(ÅÚ)

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¥»¥Ã¥·¥ç¥ó 5  ´ðÄ´¹Ö±é¡¿¶¯Í¶ÅÅÂÎI
Æü»þ: 2022ǯ1·î29Æü(ÅÚ) 9:05 - 10:25
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: º´Æ» ÂÙ¤ (¶åÂç), ÅÏîµ ¹§¿® (ÁáÂç)

5-1 (»þ´Ö: 9:05 - 9:55)
Âê̾(´ðÄ´¹Ö±é) Àèü¥í¥¸¥Ã¥¯CMOS¤Î¤¿¤á¤Î¥Á¥ã¥Í¥ëºàÎÁ¡¦¥Ç¥Ð¥¤¥¹µ»½Ñ
Ãø¼Ô*¹âÌÚ ¿®°ì, ¶ùÅÄ ·½, ÄÄ ²È驄, ´Ú ÀãÍÈ, ÎÓ úîÉÒ, úÄ ¸÷¸µ, ¥È¡¼¥×¥é¥µ¡¼¥È¥Ý¥ó ¥«¥·¥Ç¥£¥Ã¥È, ÃÝÃæ ½¼ (ÅìÂç)
Title(Keynote Speech) Channel Material and Device Technology for Advanced Logic CMOS
Author*Shinichi Takagi, Kei Sumita, Chia Tsong Chen, Xueyang Han, Cheol-Min Lim, Kwangwon Jo, Kasidit Toprasertpong, Mitsuru Takenaka (Univ. of Tokyo)
Pagepp. 45 - 50

5-2 (»þ´Ö: 9:55 - 10:25)
Âê̾(¾·ÂÔ¹Ö±é) HfO2¶¯Í¶ÅÅÁê¤Î°ÂÄê²½¡§Âè°ì¸¶Íý·×»»¤Ë´ð¤Å¤¯¹Í»¡
Ãø¼Ô*Ã滳 δ»Ë (ÀéÍÕÂç)
Title(Invited Speech) Stabilization of Ferroelectric Orthorhombic HfO2: First-Principles Calculation View
Author*Takashi Nakayama (Chiba Univ.)
Pagepp. 51 - 54


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¥»¥Ã¥·¥ç¥ó 6  ¶¯Í¶ÅÅÂÎII¡¦È¾Æ³ÂÎ
Æü»þ: 2022ǯ1·î29Æü(ÅÚ) 10:45 - 12:05
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: ÌðÅè ìâÉË (¶åÂç), °æ¾å ¿¿Íº (¥ë¥Í¥µ¥¹¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹)

6-1 (»þ´Ö: 10:45 - 11:05)
Âê̾¶¯Í¶ÅÅÀ­¤Î¸þ¾å¤Ø¸þ¤±¤¿TiN/HfxZr1-xO2³¦Ì̤ÎTiOxNyÁؤνÅÍ×À­
Ãø¼Ô*½÷²° ¿ò (»ºÁí¸¦/NIMS/ÆüËܳؽѿ¶¶½²ñÆÃÊ̸¦µæ°÷PD), À¸ÅÄÌÜ ½Ó½¨, ĹÅÄ µ®¹°, ¾åÅÄ ÌÐŵ (NIMS), Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim (¥Æ¥­¥µ¥¹Âç³Ø¥À¥é¥¹¹»), Chang-Yong Nam, Esther H. R. Tsai (¥Ö¥ë¥Ã¥¯¥Ø¥Ö¥ó¹ñΩ¸¦µæ½ê), ÂÀÅÄ ÍµÇ·, ¿¹ÅÄ ¹Ô§ (»ºÁí¸¦)
TitleImportance of TiOxNy Layer at TiN/HfxZr1-xO2 Interface for Superior Ferroelectricity
Author*Takashi Onaya (AIST/NIMS/JSPS Research Fellow PD), Toshihide Nabatame, Takahiro Nagata, Shigenori Ueda (NIMS), Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim (Univ. of Texas, Dallas), Chang-Yong Nam, Esther H. R. Tsai (Brookhaven National Laboratory), Hiroyuki Ota, Yukinori Morita (AIST)
Pagepp. 55 - 58

6-2 (»þ´Ö: 11:05 - 11:25)
Âê̾HfO2/TiO2/SiO2¹½Â¤¤ÎÅÅ°µ°õ²Ã¤Ë¤è¤ëTi¤Î²½³Ø·ë¹ç¾õÂÖÊѲ½¤Î´Ñ¬
Ãø¼Ô*¶Í¸¶ ˧¼£, ÄÔ¸ý ÎÉÂÀ, °ËÆ£ ½Ó°ì (ÅìµþÅÔ»ÔÂç), ÊÝ°æ ¹¸ (¹âµ±ÅÙ¸÷²Ê³Ø¸¦µæ¥»¥ó¥¿¡¼), µÜÅÄ Åµ¹¬ (»ºÁí¸¦), ÌîÊ¿ Çî»Ê (ÅìµþÅÔ»ÔÂç)
TitleObservation of Chemical Bonding State Change of Ti in HfO2/TiO2/SiO2 Structure by Applying Voltage
Author*Yoshiharu Kirihara, Ryota Tsujiguchi, Syunichi Ito (Tokyo City Univ.), Akira Yasui (JASRI), Noriyuki Miyata (AIST), Hiroshi Nohira (Tokyo City Univ.)
Pagepp. 59 - 61

6-3 (»þ´Ö: 11:25 - 11:45)
Âê̾AlN MOVPE¤Ë¤ª¤±¤ë¥È¥ê¥á¥Á¥ë¥¢¥ë¥ß¥Ë¥¦¥àʬ²òÈ¿±þ¤ÎÍýÏÀŪ¹Í»¡
Ãø¼Ô*ÀÖÀÐ ÂçÃÏ, ÀöÊ¿ ¾»¹¸, ÇòÀÐ ¸­Æó (̾Âç)
TitleTheoretical Study on Trimethylaluminum Decomposition in AlN MOVPE
Author*Daichi Akaishi, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.)
Pagepp. 63 - 67

6-4 (»þ´Ö: 11:45 - 12:05)
TitleIdentifying an Anomalous Phonon Mode in SiGe Alloy using Molecular Dynamics Simulation
Author*Sylvia Yuk Yee Chung, Motohiro Tomita, Junya Takizawa (Waseda Univ.), Ryo Yokogawa (Meiji Renewable Energy Laboratory), Atsushi Ogura (Meiji Renewable Energy Laboratory/Meiji Univ.), Haidong Wang (Tsinghua Univ.), Takanobu Watanabe (Waseda Univ.)
Pagepp. 69 - 74


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¥»¥Ã¥·¥ç¥ó 7  ´ðÄ´¹Ö±é¡¿¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¦Ê¬ÀÏI
Æü»þ: 2022ǯ1·î29Æü(ÅÚ) 13:05 - 15:15
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: Ë­ÅÄ ÃÒ»Ë (ÅìËÌÂç), Ãεþ ˭͵ (NIMS), µàÌÚ ¹îÇî (Ë­ÅÄÃ渦), ÉðÅÄ ¤µ¤¯¤é (NAIST)

7-1 (»þ´Ö: 13:05 - 13:55)
Âê̾(´ðÄ´¹Ö±é) ¿ÍÎà¤ÎʸÌÀ¤ËɬÍ×ÉԲķç¤ÊȾƳÂÎ ¡Ý2050ǯ¤ÎÀ¤³¦È¾Æ³ÂλԾìͽ¬¡Ý
Ãø¼Ô*ÅòÇ·¾å δ (ÈùºÙ²Ã¹©¸¦µæ½ê)
Title(Keynote Speech) Semiconductors Indispensable for Human Civilization -2050 Global Semiconductor Market Forecast-
Author*Takashi Yunogami (Fine Processing Institute)

7-2 (»þ´Ö: 13:55 - 14:15)
Âê̾NOÃâ²½½èÍý¤ò»Ü¤·¤¿4H-SiC(11-20) MOS¥Ç¥Ð¥¤¥¹¤ÎÀä±ïÀ­¤ª¤è¤ÓïçÃÍ°ÂÄêÀ­¤Îɾ²Á
Ãø¼Ô*Ãæ¾Â µ®À¡, ´äÊÒ Íª, ¾®ÎÓ Âó¿¿ (ºåÂç), À÷ë Ëþ, ²¬ËÜ ¸÷±û (»ºÁí¸¦), µÈ±Û ¾Ïδ (¸¶¸¦), ºÙ°æ Âî¼£, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç)
TitleEvaluation of Leakage Current and Threshold Voltage Shift in NO Nitrided 4H-SiC(11-20) MOS Devices
Author*Takato Nakanuma, Yu Iwakata, Takuma Kobayashi (Osaka Univ.), Mitsuru Sometani, Mitsuo Okamoto (AIST), Akitaka Yoshigoe (Japan Atomic Energy Agency), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Pagepp. 75 - 80

7-3 (»þ´Ö: 14:15 - 14:35)
Âê̾CVDÀ®Ä¹´Ä¶­²¼¤Ë¤ª¤±¤ëSiCÈù¼ÐÌ̤ؤοåÁÇÈïʤ¤ÎÍýÏÀ¸¦µæ
Ãø¼Ô*ÌÚ¼ ͧºÈ, ĹÀî ·òÂÀ, ²¡»³ ½ß, ÇòÀÐ ¸­Æó (̾Âç)
TitleTheoretical Study of Hydrogen Adsorption on SiC Vicinal Surface under CVD Growth Condition
Author*Tomoya Kimura, Kenta Chokawa, Atsushi Oshiyama, Kenji Shiraishi (Nagoya Univ.)
Pagepp. 81 - 86

7-4 (»þ´Ö: 14:35 - 14:55)
Âê̾GaNÊ£¹ç¶õ¹¦¤ÎÅŻҹ½Â¤¤ÎÂè°ì¸¶Íý·×»»¤Ë¤è¤ë¸¦µæ
Ãø¼Ô*ݯ°æ μ²ð, ĹÀî ·òÂÀ, ²¡»³ ½ß, ÇòÀÐ ¸­Æó (̾Âç)
TitleFirst Principles Studies on Electronic Structures of GaN divacancies
Author*Ryosuke Sakurai, Kenta Chokawa, Atsushi Oshiyama, Kenji Shiraishi (Nagoya Univ.)
Pagepp. 87 - 90

7-5 (»þ´Ö: 14:55 - 15:15)
Âê̾4D-XPS·×¬¥Ó¥Ã¥°¥Ç¡¼¥¿¤Î½çµÕ²òÀÏ¥·¥ß¥å¥ì¡¼¥·¥ç¥ó¸¡¾Ú
Ãø¼Ô*Ë­ÅÄ ÃÒ»Ë (ÅìËÌÂç), µÈ¼ ¿¿»Ë (¥¹¥×¥ê¥ó¥°¥¨¥¤¥È¥µ¡¼¥Ó¥¹), ½»ÅÄ ¹°Í´, »°º¬À¸ ¿¸ (¥Þ¥Ä¥À), Ä®ÅÄ ²íÉð (¥·¥¨¥ó¥¿¥ª¥ß¥¯¥í¥ó), µÈ±Û ¾Ïδ (¸¶¸¦), µÈÀî ¾´ (ÅìËÌÂç), ÎëÌÚ Å¯, ²£»³ ÏÂ»Ê (ʼ¸Ë¸©Î©Âç)
TitleSimulation Verification of Forward/Reverse Analysis in Big Data of 4D-XPS Measurements
Author*Satoshi Toyoda (Tohoku Univ.), Masashi Yoshimura (SPring-8 Service), Hirosuke Sumida, Susumu Mineoi (Mazda), Masatake Machida (Scienta Omicron), Akitaka Yoshigoe (Japan Atomic Energy Agency), Akira Yoshikawa (Tohoku Univ.), Satoru Suzuki, Kazushi Yokoyama (Univ. of Hyogo)
Pagepp. 91 - 96


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¥»¥Ã¥·¥ç¥ó 8  ¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¦Ê¬ÀÏII
Æü»þ: 2022ǯ1·î29Æü(ÅÚ) 15:35 - 17:05
Éô²°: ¥ª¥ó¥é¥¤¥ó²ñ¾ì
ºÂĹ: ºÙ°æ Âî¼£ (´ØÀ¾³Ø±¡Âç), ÅIJ¬ µªÇ· (̾Âç)

8-1 (»þ´Ö: 15:35 - 16:05)
Âê̾(¾·ÂÔ¹Ö±é) SiCɽÌ̤λÀ²½¤ÈÃâ²½¤Ë¤è¤ëMOS³¦ÌÌ·ÁÀ®¤Î²Ê³Ø
Ãø¼Ô*´î¿ ¹ÀÇ· (ÅìÂç)
Title(Invited Speech) Material Sciences in SiC MOS Interface Formation through Surface Oxidation and Surface Nitridation Reactions
Author*Koji Kita (Univ. of Tokyo)
Pagepp. 97 - 102

8-2 (»þ´Ö: 16:05 - 16:35)
Âê̾(¾·ÂÔ¹Ö±é) SiC¤ò¥×¥é¥Ã¥È¥Õ¥©¡¼¥à¤È¤·¤¿Äã´Ä¶­Éé²ÙBeyond 5G¥Ç¥Ð¥¤¥¹¤Î³«È¯¤ÈʪÍý
Ãø¼Ô*¿áα Çî°ì (ÅìËÌÂç)
Title(Invited Speech) Development and Exploring Physics of Low Environmental Load Beyond 5G Devices Using SiC as a Platform
Author*Hirokazu Fukidome (Tohoku Univ.)
Pagepp. 103 - 108

8-3 (»þ´Ö: 16:35 - 17:05)
Âê̾(¾·ÂÔ¹Ö±é) AlSiO¥²¡¼¥È»À²½Ëì¤òÍѤ¤¤¿GaN¥Ñ¥ï¡¼MOSFET ¤Î¿ÊŸ¤È²ÝÂê
Ãø¼Ô*À®ÅÄ Å¯À¸, °ËÆ£ ·ò¼£, µÆÅÄ Âç¸ç (Ë­ÅÄÃ渦), ÉÚÅÄ °ìµÁ, ËÙÅÄ ¾»¹¨, ²ÃÃÏ Å° (̾Âç)
Title(Invited Speech) Progress on and Challenges of GaN Power MOSFETs using AlSiO gate oxides
Author*Tetsuo Narita, Kenji Ito, Daigo Kikuta (Toyota Central R&D Labs.), Kazuyoshi Tomita, Masahiro Horita, Tetsu Kachi (Nagoya Univ.)
Pagepp. 109 - 111


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2022ǯ1·î28Æü(¶â)

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Æü»þ: 2022ǯ1·î28Æü(¶â) 13:00 - 14:50
Éô²°: ¥ª¥ó¥é¥¤¥ó¥Ý¥¹¥¿¡¼²ñ¾ì
ºÂĹ: ½©»³ µü (»°½ÅÂç), ¾¾Â¼ μ (NIMS), ÂçÅÄ ¹¸À¸ (̾Âç), 궶 Í¥ºö (Åì¥ì¥ê¥µ¡¼¥Á¥»¥ó¥¿¡¼)

P-1
Âê̾¹ân·¿Ge¤Î¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹Ãæ¤Ë¤ª¤±¤ëSb¤ÎºÆʬÉÛ
Ãø¼Ô*¥µ¥×¥È¥í ¥é¥Ï¥Þ¥È ¥Ï¥Ç¥£ (NIMS/ÃÞÇÈÂç), ¾¾Â¼ μ (NIMS), ¿¼ÅÄ Ä¾¼ù (NIMS/ÃÞÇÈÂç)
TitleRedistribution of Sb during Epitaxial Growth of Highly n-doped Ge
Author*Rahmat Hadi Saputro (NIMS/Univ. of Tsukuba), Ryo Matsumura (NIMS), Naoki Fukata (NIMS/Univ. of Tsukuba)
Pagepp. 113 - 116

P-2
Âê̾Si(100)¾å̵¶ËÀ­AlNÀ®Ä¹»þ¤ÎN2¥¹¥Ñ¥Ã¥¿¥ê¥ó¥°¥¬¥¹¶¡µëÎ̤ξò·ï¸¡Æ¤
Ãø¼Ô*¿¹ÅÄ ²íÌé (ÌÀÂç), Àж¶ ·¼¼¡, ¹â¶¶ ·ò°ìϺ (¥³¥á¥Ã¥È), ¾åÅÄ ÌÐŵ, ÄÄ ·¯, Ãεþ ˭͵ (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç), ĹÅÄ µ®¹° (NIMS)
TitleStudy on Conditions of N2 Sputtering Gas Ratio for Nonpolar AlN Growth on Si (100)
Author*Masaya Morita (Meiji Univ.), keiji Ishibashi, Kenichiro Takahashi (Comet), Shigenori Ueda, Jun Chen, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.), Takahiro Nagata (NIMS)
Pagepp. 117 - 120

P-3
Âê̾Âè°ì¸¶Íý·×»»¤Ë¤è¤ëÏĤó¤ÀSiO2Ãæ¤Î·ç´Ù¤ÎÂÓÅŸú²Ì¤Î¸¦µæ
Ãø¼Ô*À¾Â¼ ¹ë¹­, ±ÆÅç ÇîÇ· (Å纬Âç)
TitleFirst-principles Study of Charging Effect for Defects in Strained SiO2
Author*Takehiro Nishimura, Hiroyuki Kageshima (Shimane Univ.)
Pagepp. 121 - 124

P-4
Âê̾¥È¥ó¥Í¥ëFETÍÑÆ󸵻À²½ÊªÈ¾Æ³ÂÎ¥Á¥ã¥Í¥ëºàÎÁ¤ÎÁÈÀ®¤ÈÇ®½èÍý¤¬ÊªÀ­¤ËÍ¿¤¨¤ë±Æ¶Á
Ãø¼Ô*ÂçÌç Í´µ® (ÌÀÂç), Ãεþ ˭͵ (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç), ĹÅÄ µ®¹° (NIMS)
TitleEffects of Composition and Post Annealing on Physical Properties of Binally Oxide Semiconductor Based Channel Materials for Tunnel FETs
Author*Yuki Daimon (Meiji Univ.), Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.), Takahiro Nagata (NIMS)
Pagepp. 125 - 128

P-5
Âê̾HfO2ÇöËì¤Î°ÂÄêÀ­¤ÈͶÅÅÆÃÀ­¡§Âè°ì¸¶Íý·×»»¤Ë¤è¤ë¸¡Æ¤
Ãø¼Ô*ËÒ Ë§ÏÂ, ¿·°æ Àé·Å, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleFirst-Principles Study on Stability and Dielectric Properties of HfO2 Thin Films
Author*Yoshikazu Makis, Kazuaki Arai, Takashi Nakayama (Chiba Univ.)
Pagepp. 129 - 134

P-6
Âê̾Ä㼡¸µÇöËìȾƳÂΤÎpnÀܹç¤Ë¤ª¤±¤ë¥È¥ó¥Í¥ëÅÅή¤Î¿¶¤ëÉñ¤¤¡§¤½¤ÎÍýÏÀŪ¸¡Æ¤
Ãø¼Ô*ìä ¾Í·® (ÀéÍÕÂç), ÈÓÄÍ ¾­ÂÀ (»ºÁí¸¦), Ã滳 δ»Ë (ÀéÍÕÂç)
TitleTunneling Currents through pn Junctions of Low-dimensional Thin-film Semiconductors: Theoretical Study
Author*Sanghun Cho (Chiba Univ.), Shota Iizuka (AIST), Takashi Nakayama (Chiba Univ.)
Pagepp. 135 - 140

P-7
Âê̾ȾƳÂΤÎpnÀܹç¤Ë¤ª¤±¤ëÅÀ·ç´ÙŽ¥ÉÔ½ãʪ¤ò²ð¤·¤¿¥È¥ó¥Í¥ëÅÅή¤ÎÍýÏÀŪ¸¡Æ¤
Ãø¼Ô*²ÃÆ£ ¼îÎÉ°Î, ìä ¾Í·®, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleTheoretical Study on Tunneling Current through Semiconductor pn Junctions with Defects and Impurities
Author*Jyurai Kato, Sanghun Cho, Takashi Nakayama (Chiba Univ.)
Pagepp. 141 - 146

P-8
Âê̾»ÀÁǶõ¹¦¤ÎÂÓÅŤ¬Í¶µ¯¤¹¤ë¶â°»À²½Êª¤Î¹½Â¤ÊѲ½¡§Âè°ì¸¶Íý·×»»¤Ë¤è¤ë¸¡Æ¤
Ãø¼Ô*¿·°æ Àé·Å, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleOxygen-Vacancy Charging Induced Structural Change of Metal Oxides: First-Principles Study
Author*Kazuaki Arai, Takashi Nakayama (Chiba Univ.)
Pagepp. 147 - 151

P-9
Âê̾ñ½ã¶â°/Ge³¦Ì̤Υե§¥ë¥ß¥ì¥Ù¥ë¡¦¥Ç¥Ô¥Ë¥ó¥°¡§Âè°ì¸¶Íý·×»»¤Ë¤è¤ë¸¡Æ¤
Ãø¼Ô*À¾ËÜ ±Í, ¿¢ÅÄ ²ÆÍÕ, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleFermi-level Depinning at Simple-Metal/Ge Interfaces: First-principles Study
Author*Akira Nishimoto, Kayou Ueda, Takashi Nakayama (Chiba Univ.)
Pagepp. 153 - 158

P-10
Âê̾TiN/ZrO2/Al2O3¥¹¥¿¥Ã¥¯¹½Â¤¤Ë¤è¤ëZrO2Ëì¤Î¹âͶÅÅΨ²½¤Ø¸þ¤±¤¿¥Á¥ã¥ì¥ó¥¸
Ãø¼Ô*ß·ÅÄ Êþ¼Â, À¸ÅÄÌÜ ½Ó½¨ (NIMS), ½÷²° ¿ò (»ºÁí¸¦/ÆüËܳؽѿ¶¶½²ñÆÃÊ̸¦µæ°÷PD), °æ¾å ËüΤ, Âç°æ ¶Çɧ, ÃÓÅÄ Ä¾¼ù, ÄÍ±Û °ì¿Î (NIMS)
TitleChallenge of High Dielectric Constant of ZrO2 Film Using TiN/ZrO2/Al2O3 Stack Structure
Author*Tomomi Sawada, Toshihide Nabatame (NIMS), Takashi Onaya (AIST/JSPS Research Fellow PD), Mari Inoue, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi (NIMS)
Pagepp. 159 - 162

P-11
Âê̾4H-SiC/SiO2³¦Ì̤ǤÎÃâÁÇ»À²½Êª¤ª¤è¤Ó¥¢¥ó¥â¥Ë¥¢¤ÎÈ¿±þµ¡¹½¤ÎÍýÏÀŪ¸¡Æ¤
Ãø¼Ô*½©»³ µü, À¶¿å µª»Ö, °ËÆ£ ÃÒÆÁ (»°½ÅÂç), ±ÆÅç ÇîÇ· (Å纬Âç), ÇòÀÐ ¸­Æó (̾Âç)
TitleReaction of Nitrogen Oxide and NH3 Molecules at 4H-SiC/SiO2 Interface: An Ab Initio Study
Author*Toru Akiyama, Tsunashi Shimizu, Tmonori Ito (Mie Univ.), Hiroyuki Kageshima (Shimane Univ.), Kenji Shiraishi (Nagoya Univ.)
Pagepp. 163 - 168

P-12
Âê̾¥Ý¡¼¥ê¥ó¥°½èÍýÁ°¸å¤Ë¤ª¤±¤ë¶¯Í¶ÅÅÀ­Hf0.5Zr0.5O2ÇöËì¤ÎÉԲĵÕŪ¤ÊÅÁƳÆÃÀ­ÊѲ½
Ãø¼Ô*¿¹ÅÄ ¹Ô§, ÂÀÅÄ ÍµÇ·, ±¦ÅÄ ¿¿»Ê (»ºÁí¸¦)
TitleIrreversible Change of Carrier Transport Property of Ferroelectric Hf0.5Zr0.5O2 Thin Films by the First Poling Treatment
Author*Yukinori Morita, Hiroyuki Ota, Shinji Migita (AIST)
Pagepp. 169 - 172

P-13
Âê̾AlGaN¥­¥ã¥Ã¥×Áؤˤè¤ëMg¥É¡¼¥×p-GaN¤Î³èÀ­²½ÍÞÀ©¤È¿åÁÇæΥ²áÄø¤ÎÀ©¸æ¤Ë¤è¤ëÆÃÀ­²þÁ±
Ãø¼Ô*¹Âü ½¨Áï, ÏÂÅÄ ÍªÊ¿, Ìîùõ ´´¿Í, ºÙ°æ Âî¼£ (ºåÂç), À®ÅÄ Å¯À¸ (Ë­ÅÄÃ渦), ²ÃÃÏ Å° (̾Âç), »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ºåÂç)
TitleInhibition of Mg Activation in P-Type GaN Caused by Thin AlGaN Capping Layer and Impact of Designing Hydrogen Desorption Pathway
Author*Hidetoshi Mizobata, Yuhei Wada, Mikito Nozaki, Takuji Hosoi (Osaka Univ.), Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Pagepp. 173 - 176

P-14
Âê̾HFÍϱÕÃæ¤Ç¤Î¥¨¥Ã¥Á¥ó¥°»þ¤ÎC-V¬Äê¤Ë¤è¤ëSiO2ËìÃæÅŲÙʬÉÛɾ²Á
Ãø¼Ô*½ïÊý ¾­»Ö, Ï¡¾Â δ (ÃÞÇÈÂç)
TitleEvaluation of Charge Distribution in SiO2 Film by C-V Measurement During Etching in HF Solution
Author*Masashi Ogata, Ryu Hasunuma (Univ. of Tsukuba)
Pagepp. 177 - 181

P-15
Âê̾HCl¤Ë¤è¤ëɽÌÌÀö¾ô¤¬Al2O3/GaN³¦ÌÌÆÃÀ­¤ª¤è¤ÓÅŵ¤ÅªÆÃÀ­¤ËÍ¿¤¨¤ë±Æ¶Á
Ãø¼Ô*Ĺ°æ ÂçÀ¿, ÅIJ¬ µªÇ·, ÂçÅÄ ¹¸À¸, ËÒ¸¶ ¹îŵ, µÜùõ À¿°ì (̾Âç)
TitleEffects of HCl Cleaning on Al2O3/GaN Interface and Electrical Properties
Author*Taisei Nagai (Nagoya Univ.), Noriyuki Taoka (DII Collaborative Graduate Program for Accelerating Innovation in Future Electronics), Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
Pagepp. 183 - 186

P-16
Âê̾¶ËÇöGeSiSn/GeSn/GeSiSnÆó½Å¾ãÊɹ½Â¤¤Î·ÁÀ®¤ª¤è¤Ó¤½¤ÎÅŵ¤ÅªÆÃÀ­
Ãø¼Ô*¼Æ»³ Ìе×, Galih Ramadana Suwito, ÃæÄÍ Íý (̾Âç)
TitleFormation of Ultra-Thin GeSiSn/GeSn/GeSiSn Double-Barrier Structures and Their Electrical Properties
Author*Shigehisa Shibayama, Galih Ramadana Suwito, Osamu Nakatsuka (Nagoya Univ.)
Pagepp. 187 - 190

P-17
Âê̾´ðÈIJÃÇ®¤Ë¤è¤ëAl/Ge(111) ¤Î·ë¾½À­¡¦Ê¿Ã³À­¤ÎÀ©¸æ¤ÈÇ®½èÍý¤Ë¤è¤ëGeɽÌÌÊÐÀÏ
Ãø¼Ô*¾¾²¼ ·½¸ã, ÂçÅÄ ¹¸À¸ (̾Âç), ÎÓ ¾­Ê¿ (Åì¥ì¥ê¥µ¡¼¥Á¥»¥ó¥¿¡¼), ÅIJ¬ µªÇ·, ËÒ¸¶ ¹îŵ, µÜùõ À¿°ì (̾Âç)
TitleControls of Crystallinity and Surface Flatness of Al/Ge(111) by Substrate Heating and Ge Surface Segregation by Annealing
Author*Keigo Matsushita, Akio Ohta (Nagoya Univ.), Shohei Hayashi (Toray Research Center), Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
Pagepp. 191 - 196

P-18
Âê̾CVDÂÏÀÑSiO2ÇöËì¤ÎÅŵ¤ÆÃÀ­¤ÈÁê´Ø¤¹¤ëXPS¥¹¥Ú¥¯¥È¥ë¤ÎÆÃħÎ̤Ȥ½¤ÎʪÍýŪµ¯¸»
Ãø¼Ô*ÉðÅÄ ¤µ¤¯¤é (NAIST), Emilia Hashamova (Karlsruhe Inst. of Tech.), ĹëÀî ºÚ, ¾å¾Â ËÓŵ, µÜÈø Ãι¬, ¾®Ìî ľμ, ±º²¬ ¹Ô¼£, Á¥ÄÅ ¸ø¿Í (NAIST)
TitleA Feature in XPS Spectra of CVD-SiO2 Films Having Correlation with Their Electronic Properties and Its Physical Origin
Author*Sakura Takeda N. (NAIST), Emilia Hashamova (Karlsruhe Inst. of Tech.), Sai Hasegawa, Mutsunori Uenuma, Tomoyuki Miyao, Naoaki Ono, Yukiharu Uraoka, Kimito Funatsu (NAIST)
Pagepp. 197 - 201

P-19
Âê̾Ba¤òƳÆþ¤·¤¿SiC¾åÇ®»À²½Ëì¤ÎÌÌÆâÉԶѼÁÀ­
Ãø¼Ô*´Øº¬ ¾­¸ã (ÃÞÇÈÂç), ²¬ËÜ ¸÷±û, À÷ë Ëþ, Ê¿°æ ͪµ× (»ºÁí¸¦), Ï¡¾Â δ (ÃÞÇÈÂç)
TitleNanoscale Inhomogeneity of Ba-introduced Thermally Grown SiO2 on SiC
Author*Shogo Sekine (Univ. of Tsukuba), Mitsuo Okamoto, Mitsuru Sometani, Hirohisa Hirai (AIST), Ryu Hasunuma (Univ. of Tsukuba)
Pagepp. 203 - 208



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