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| Sunday, November 14, 2021 |
| Title | (Keynote Address) Co-design of Non-volatile Memory Devices, Circuits and Systems in AI Era |
| Author | *Ken Takeuchi (Univ. of Tokyo, Japan) |
| Page | pp. 1 - 2 |
| Title | (Invited Paper) Metal-Oxide Synapse Devices and Their Application to Neuromorphic Analog Circuits |
| Author | *Takao Marukame, Koichi Mizushima, Kumiko Nomura, Yoshifumi Nishi (Toshiba, Japan) |
| Page | pp. 3 - 4 |
| Title | The Effects of Different ALD Oxidants on the Synaptic Characteristics of HfO2 Conductive Bridge Random Access Memory |
| Author | *Tae Sung Lee, Haider Abbas, Duho Kim, Yu-Rim Jeon, Boncheol Ku, Changhwan Choi (Hanyang Univ., Republic of Korea) |
| Page | pp. 5 - 6 |
| Title | Temperature-Dependent Resistive Switching Properties of GaOx Memristors up to 600 K |
| Author | *Kento Sato, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai (Osaka Univ., Japan) |
| Page | pp. 7 - 8 |
| Title | (Invited Paper) Ultrathin Dielectric Integration and Reliability on 2D Semiconductors |
| Author | Zhihao Yu (Nanjing Univ./Nanjing Univ. of Posts and Telecommunications, China), Weisheng Li, Hongkai Ning, Taotao Li, *Xinran Wang (Nanjing Univ., China) |
| Page | pp. 9 - 10 |
| Title | Improved Electrical Characteristics in Ge nMOSFET by Supercritical Fluid Treatment With H2O2 Cosolvent |
| Author | *Kai-Chun Yang, Kuei-Shu Chang-Liao, Dun-Bao Ruan (National Tsing Hua Univ., Taiwan) |
| Page | pp. 11 - 12 |
| Title | Oxygen Diffusion Barrier on Interfacial Layer in Ge nMOSFET Formed with Remote NH3 Plasma Treatment |
| Author | *Cheng-Han Li, Dun-Bao Ruan, Kuei-Shu Chang-Liao (National Tsing Hua Univ., Taiwan) |
| Page | pp. 13 - 14 |
| Title | Impact of Substrate Heating on Surface Flattening and Ge Segregation of Al/Ge(111) |
| Author | *Keigo Matsushita, Akio Ohta, Noriyuki Taoka (Nagoya Univ., Japan), Shohei Hayashi (Toray Research Center, Japan), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 15 - 16 |
| Title | (Invited Paper) Charge Pumping under Electron Spin Resonance in Si MOSFETs —Identification of Interface Defects and Detection of Donor Electrons— |
| Author | *Masahiro Hori, Yukinori Ono (Shizuoka Univ., Japan) |
| Page | pp. 17 - 18 |
| Title | Characterization of Deep Traps in Near-Interface Oxide of Widegap MOS Interfaces Revealed by Light Irradiation and Temperature Change |
| Author | *Rimpei Hasegawa, Koji Kita (Univ. of Tokyo, Japan) |
| Page | pp. 19 - 20 |
| Title | 1/f Noise Analysis of MOSFET Devices and Processes by the Power Spectral Density Integrated Method |
| Author | *Yoshiki Murayama, Masato Kijima, Takehiko Yamashita, Yuusuke Takezaki, Masanori Miyata, Ryuuta Isobe (Ricoh Electronic Devices, Japan), Hirobumi Watanabe (Ricoh, Japan) |
| Page | pp. 21 - 22 |
| Title | Microwave Photoconductivity Decay under Gate-Bias Application to Detect Charge Traps in Si-MOS Devices |
| Author | *Katsuya Sato, Satoru Miyamoto, Noritaka Usami (Nagoya Univ., Japan) |
| Page | pp. 23 - 24 |
| Title | Suppression of Decay Time in AlGaN/GaN HEMT Photodetectors Using Substrate Pulse Voltage Application |
| Author | *Atsuki Miyata, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan) |
| Page | pp. 25 - 26 |
| Monday, November 15, 2021 |
| Title | (Keynote Address) Oxide Based Resistive Switching Device for Memory and Computing Applications |
| Author | Chunmeng Dou, Xiaoxin Xu (Chinese Academy of Sciences, China), Xumeng Zhang (Fudan Univ., China), Jianguo Yang, Qing Luo (Chinese Academy of Sciences, China), Qi Liu, *Ming Liu (Chinese Academy of Sciences/Fudan Univ., China) |
| Page | pp. 27 - 28 |
| Title | Nano-Polycrystalline Ag Doped ZnO Layer for Steep-Slope Threshold Switching Selectors |
| Author | *Akshay Sahota, Harrison S. Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung (Univ. of Texas, Dallas, USA), Si Joon Kim (Kangwon National Univ., Republic of Korea), Jang-Sik Lee (Pohang Univ. of Science and Tech. (POSTECH), Republic of Korea), Jinho Ahn (Hanyang Univ., Republic of Korea), Heber Hernandez-Arriaga, Jiyoung Kim (Univ. of Texas, Dallas, USA) |
| Page | pp. 29 - 30 |
| Title | Manipulation of Interfacial Dipole Effect at Perovskite Oxide Heteroepitaxial Interface by Stacking Sequence of Monatomic Layers in LaAlO3 |
| Author | *Atsushi Tamura (Univ. of Tokyo, Japan), Cheol Hyun An, Hanjin Lim (Samsung Electronics, Republic of Korea), Koji Kita (Univ. of Tokyo, Japan) |
| Page | pp. 31 - 32 |
| Title | Effects of carbon atoms on the reliability of the potassium-ion electret used in vibration-powered generators |
| Author | *Yoshiki Ohata, Masaki Araidai (Nagoya Univ., Japan), Yasushi Shibata, Gen Hashiguchi (Shizuoka Univ., Japan), Kenji Shiraishi (Nagoya Univ., Japan) |
| Page | pp. 33 - 34 |
| Title | (Invited Paper) Atomistic Plane Wave Pseudopotential Simulations for MOSFET Devices |
| Author | *Lin-Wang Wang (Lawrence Berkeley National Laboratory, USA), Meng Ye, Yue-Yang Liu, Xiangwei Jiang, Shu-Shen Li (Chinese Academy of Sciences, China) |
| Page | pp. 35 - 36 |
| Title | Achievement of High Channel Mobility of 3C-SiC n-MOSFET with the Gate Stack Formed at Low Temperature |
| Author | *Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan), Shigeomi Hishiki, Hiroki Uratani, Yoshiki Sakaida, Keisuke Kawamura (Air Water, Japan) |
| Page | pp. 37 - 38 |
| Title | Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al2O3 Interface Induced by Titanium layer |
| Author | *Ze Feng (Nankai Univ., China), Hong Dong (Nankai university, China) |
| Page | pp. 39 - 40 |
| Title | (Invited Paper) Anti-Ferroelectric HZO Blocking Layer in Charge Trap Flash Memory Device |
| Author | Sung Won Shin, Eui Joong Shin, *Byung Jin Cho (KAIST, Republic of Korea) |
| Page | pp. 41 - 42 |
| Title | Thermal Stability of Ferroelectric AlScN Films |
| Author | *Ryota Shibukawa, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan) |
| Page | pp. 43 - 44 |
| Title | HAXPES Evaluation of the Chemical Bond State of the Elements in the Polarized AlScN Film |
| Author | *Ryota Tsujiguchi, Yoshiharu Kirihara (Tokyo City Univ., Japan), Kuniyuki kakushima (Tokyo Inst. of Tech., Japan), Akira Yasui (Japan Synchron Radiation Research Institute(JASRI), Japan), Hiroshi Nohira (Tokyo City Univ., Japan) |
| Page | pp. 45 - 46 |
| Title | Enhancement of Ferroelectricity in Sputtered Hafnium-Zirconium Oxide Thin Films by Catalytically Generated Atomic Hydrogen Treatment |
| Author | *Mohit, Yuli Wen, Yuki Hara (JAIST, Japan), Shinji Migita, Hiroyuki Ota, Yukinori Morita (AIST, Japan), Keisuke Ohdaira, Eisuke Tokumitsu (JAIST, Japan) |
| Page | pp. 47 - 48 |
| Title | The Effect of Sputtering Power on the Reliability of MFS Diode with 5 nm Thick Ferroelectric Nondoped HfO2 |
| Author | *Joong-Won Shin, Masakazu Tanuma, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan) |
| Page | pp. 49 - 50 |
| Title | (Invited Paper) HfZrO2-Based Ferroelectric FETs for Emerging Computing Technologies |
| Author | *Kasidit Toprasertpong, Eishin Nako, Zeyu Wang, Chihiro Matsui, Ryosho Nakane, Ken Takeuchi, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan) |
| Page | pp. 51 - 52 |
| Title | Improved Ferroelectric Characteristics and Synaptic Function Using ALD La-doped HfO2 Thin Film and TaN Electrode |
| Author | *Duho Kim, Yu-Rim Jeon, Boncheol Ku, Changhwan Choi (Hanyang Univ., Republic of Korea) |
| Page | pp. 53 - 54 |
| Title | Phase Control of Heterogeneous HfxZr(1-x)O2 Thin Films by Machine Learning |
| Author | *Zeyuan Ni, Hidefumi Matsui (Tokyo Electron Technology Solutions, Japan) |
| Page | pp. 55 - 56 |
| Title | (Invited Paper) Ferroelectric Phase Stabilization Influences HfO2-Based Device Performance |
| Author | *Terence Mittmann (NaMLab gGmbH, Germany), Thomas Mikolajick (TU Dresden, NaMLab gGmbH, Germany), Uwe Schroeder (NaMLab gGmbH, Germany) |
| Page | pp. 57 - 58 |
| Title | Independent Effect of Dopant, Oxygen Vacancy and Surface Energy on Crystal Phase of HfO2 Thin Films towards a General Parameter to Engineer the Ferroelectricity |
| Author | *Tianning Cui (Shanghai Jiao Tong Univ., China), Liping Zhu (Fudan Univ., China), Danyang Chen, Yuyan Fan, Jingquan Liu, Xiuyan Li (Shanghai Jiao Tong Univ., China) |
| Page | pp. 59 - 60 |
| Title | Recovery of Ferroelectric Property after Endurance Test by Positive Reset Voltage Application for CeOx-Capped Ferroelectric HfO2 Films |
| Author | *Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan) |
| Page | pp. 61 - 62 |
| Title | Roles for Si, Oxygen atoms and Oxygen Vacancy in Crystalline Phase Stabilization of HfZr-oxide Layer |
| Author | *Noriyuki Taoka, Ryosuke Hasegawa, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan) |
| Page | pp. 63 - 64 |
| Tuesday, November 16, 2021 |
| Title | (Invited Paper) Effects of Oxidation Reactants of Thermal ALD for Ferroelectric Hf0.5Z0.5O2 |
| Author | Jin-Hyun Kim, Yong Chan Jung, Su Min Hwang, Heber Hernandez-Arriaga, Jaidah Mohan, Dan Le (Univ. of Texas, Dallas, USA), Daniel Alvarez, Jeff Spiegelman (RASIRC Inc, USA), *Jiyoung Kim (Univ. of Texas, Dallas, USA) |
| Page | pp. 65 - 66 |
| Title | Effect of ALD Processes on Physical and Electrical Properties of HfO2 Dielectrics for CMOS Image Sensor Application |
| Author | *Honggyun Kim, Vijay D. Chavan (Sejong Univ., Republic of Korea), Byoungsu Ko (POSTECH, Republic of Korea), Jae-Sung Lee (Uiduk Univ., Republic of Korea), Kyeong-Keun Choi (POSTECH, Republic of Korea), Deok-kee Kim (Sejong Univ., Republic of Korea) |
| Page | pp. 67 - 68 |
| Title | (Invited Paper) Thermal Atomic Layer Etching of Dielectric Films and Development of Removable Etch Stop Layers |
| Author | *Steven M. George, David R. Zywotko (Univ. of Colorado, USA) |
| Page | pp. 69 - 70 |
| Title | (Invited Paper) Highly Selective Thermal-Cyclic ALE for Conformal Etch and Recess of Thin Films |
| Author | *Masaru Izawa (Hitachi High-Tech, Japan), Kazunori Shinoda (Hitachi, Japan), Nobuya Miyoshi (Hitachi High-Tech America, USA), Yoshihide Yamaguchi, Sumiko Fujisaki (Hitachi, Japan) |
| Page | pp. 71 - 72 |
| Title | Oxygen Out-diffusion to the Ambient During SiO2/SiC Oxidation |
| Author | *Nannan You, Xinyu Liu, Yun Bai, Qian Zhang, Shengkai Wang (Chinese Academy of Sciences/Univ. of Chinese Academy of Sciences, China) |
| Page | pp. 73 - 74 |
| Title | Unexpected Fixed Charge Generation by an Additional Annealing after Interface Nitridation Processes at SiO2/4H-SiC (0001) MOS Interfaces |
| Author | *Tae-Hyeon Kil, Koji Kita (Univ. of Tokyo, Japan) |
| Page | pp. 75 - 76 |
| Title | Enhancement of the Field-Effect Mobility of 4H-SiC Buried Channel n-MOSFETs by Using Al2O3 as a Gate Insulator |
| Author | *Takuma Doi (Nagoya Univ./AIST-NU GaN-OIL, Japan), Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ., Japan), Mitsuaki Shimizu (AIST-NU GaN-OIL, Japan), Osamu Nakatsuka (Nagoya Univ., Japan) |
| Page | pp. 77 - 78 |
| Title | Effect of POA Treatment on Microwave Plasma Oxidized SiO2/SiC Gate Stack |
| Author | *Qian Zhang, Nannan You, Peng Liu, Shengkai Wang (Chinese Academy of Sciences/Univ. of Chinese Academy of Sciences, China) |
| Page | pp. 79 - 80 |
| Title | (Invited Paper) Advances in Diamond MOS Interface |
| Author | *Norio Tokuda, Xufang Zhang, Tsubasa Matsumoto, Takao Inokuma (Kanazawa Univ., Japan), Hiromitsu Kato, Toshiharu Makino, Daisuke Takeuchi (AIST, Japan), Christoph E. Nebel (Kanazawa Univ./Diamond and Carbon Applications, Germany), Satoshi Yamasaki (Kanazawa Univ., Japan) |
| Page | pp. 81 - 82 |
| Title | GaN HEMTs with Self-Upward-Polarized AlScN Gate Dielectrics toward E-mode Operation |
| Author | *Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan) |
| Page | pp. 83 - 84 |
| Title | Characterization of SiO2/β-Ga2O3(001) MOS Band Diagram with Photoelectron Spectroscopy for the Correct Evaluation of Interface Fixed Charge Density |
| Author | *Daiki Takeda, Koji Kita (Univ. of Tokyo, Japan) |
| Page | pp. 85 - 86 |
| Title | Ab initio Study for Orientation Dependence of Nitrogen Incorporation at 4H-SiC/SiO2 Interfaces |
| Author | *Toru Akiyama, Tsunashi Shimizu, Tomonori Ito (Mie Univ., Japan), Hiroyuki Kageshima (Shimane Univ., Japan), Kenta Chokawa, Kenji Shiraishi (Nagoya Univ., Japan) |
| Page | pp. 87 - 88 |
| Title | DFT Study on Defect Structures at SiC(000-1)/SiO2 Interface after Wet Oxidation |
| Author | *Mukai Tsunasaki, Mitsuharu Uemoto, Tomoya Ono (Kobe Univ., Japan) |
| Page | pp. 89 - 90 |
| Title | High-Temperature Conductance Analysis for Al2O3/Diamond Interface States |
| Author | *Xufang Zhang, Tsubasa Matsumoto (Kanazawa Univ., Japan), Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani (AIST, Japan), Dai Okamoto (Toyama Prefectural Univ., Japan), Noriyuki Iwamuro (Univ. of Tsukuba, Japan), Satoshi Yamasaki (Kanazawa Univ., Japan), Christoph E. Nebel (Kanazawa Univ./Diamond and Carbon Applications, Germany), Takao Inokuma, Norio Tokuda (Kanazawa Univ., Japan) |
| Page | pp. 91 - 92 |
| Title | Introduction of Surface Field-Plate for Accurate Minority Carrier Lifetime Estimation of 4H-SiC Epitaxial Layer |
| Author | *Mitsuki Nishizawa, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech., Japan), Yoshiaki Daigo (NuFlare Technology, Japan), Ichiro Mizushima, Takashi Yoda (Tokyo Inst. of Tech./NuFlare Technology, Japan), Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan) |
| Page | pp. 93 - 94 |
| Title | Demonstration of Cavity-Free GeSn Thermoelectric Generator |
| Author | *Kazuaki Katayama, Md Mehdee Hasan Mahfuz (Waseda Univ., Japan), Masaya Nakata, Yoshitsune Ito, Kazuaki Fujimoto, Motohiro Tomita, Masashi Kurosawa (Nagoya Univ., Japan), Takeo Matsuki (Waseda Univ./AIST, Japan), Takanobu Watanabe (Waseda Univ., Japan) |
| Page | pp. 95 - 96 |
| Title | Observation of Ferroelectricity in Atomic Layer Deposited AlN Film |
| Author | *Sho Sasaki, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan) |
| Page | pp. 97 - 98 |