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2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S5  Interface Control and Reliability for Devices
Time: 9:00 - 10:50 Wednesday, November 4, 2015
Chairs: Masao Inoue (Renesas Electronics, Japan), Kenji Okada (TowerJazz Panasonic Semiconductor, Japan)

S5-1 (Time: 9:00 - 9:30)
Title(Invited Paper) Noise Measurement Application for Nano-Electronic Device Development
Author*Kenji Ohmori (Univ. of Tsukuba, Japan)
Pagepp. 93 - 94

S5-2 (Time: 9:30 - 9:50)
TitleTime Dependent Dielectric Breakdown in Nanowire Transistor
Author*Kensuke Ota, Chika Tanaka, Toshinori Numata, Daisuke Matsushita, Masumi Saitoh (Toshiba, Japan)
Pagepp. 95 - 96

S5-3 (Time: 9:50 - 10:10)
TitleRapid Temperature Oxidation at SiO2/Si(001) Interface Studied by Real-Time X-Ray Photoelectron Spectroscopy: Rapid Cooling Versus Rapid Heating
Author*Jiayi Tang, Shuichi Ogawa (Tohoku Univ., Japan), Akitaka Yoshigoe (Japan Atomic Energy Agency, Japan), Shinji Ishidzuka (National Inst. of Tech., Akita College, Japan), Yuji Takakuwa (Tohoku Univ., Japan)
Pagepp. 97 - 98

S5-4 (Time: 10:10 - 10:30)
TitleExtension of Silicon Emission Model for Silicon Pillar Oxidation
Author*Hiroyuki Kageshima (Shimane Univ., JST-ACCEL, Japan), Kenji Shiraishi (Nagoya Univ., JST-ACCEL, Japan), Tetsuo Endoh (Tohoku Univ., JST-ACCEL, Japan)
Pagepp. 99 - 100

S5-5 (Time: 10:30 - 10:50)
TitleA New Reactive Force Field for Study on the Formation of SiC/SiO2 Interface
Author*Shuichiro Hashimoto, Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 101 - 102