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2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S4  Power Device and Characterization
Time: 15:20 - 17:30 Tuesday, November 3, 2015
Chairs: Heiji Watanabe (Osaka Univ., Japan), Eisuke Tokumitsu (JAIST, Japan)

S4-1 (Time: 15:20 - 15:50)
Title(Invited Paper) Characterization and Control of GaN MOS Interfaces for Power Transistor Application
Author*Tamotsu Hashizume, Zenji Yatabe (Hokkaido Univ., Japan)
Pagepp. 81 - 82

S4-2 (Time: 15:50 - 16:10)
TitleNovel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs
Author*Kunihiro Tsubomi, Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ., Japan)
Pagepp. 83 - 84

S4-3 (Time: 16:10 - 16:30)
TitleEvaluation of Valence Band Maximum and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS
Author*Nobuyuki Fujimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 85 - 86

S4-4 (Time: 16:30 - 16:50)
TitleDensity Profile Simulated for Thermal SiO2 Films on 4H-SiC and the Crystallographic Orientation Dependence
Author*Keisuke Bamoto, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Pagepp. 87 - 88

S4-5 (Time: 16:50 - 17:10)
TitleInitial Stage of SiO2/SiC Interface Formation on C-face 4H-SiC
AuthorTomoya Sasago, Hitoshi Arai, Shunta Yamahori, *Hiroshi Nohira (Tokyo City Univ., Japan)
Pagepp. 89 - 90

S4-6 (Time: 17:10 - 17:30)
TitleNon-uniform Thermal Oxidation of SiC and Electrical Characteristics Properties
Author*Ryu Nagai, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Pagepp. 91 - 92