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2015 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S3  Process and Evaluation for New Channel Materials
Time: 13:00 - 15:00 Tuesday, November 3, 2015
Chairs: Toshihide Nabatame (NIMS, Japan), Jiro Yugami (Hitachi Kokusai Electric, Japan)

S3-1 (Time: 13:00 - 13:30)
Title(Invited Paper) ALD of Dielectrics for Advanced Channel Materials - Initial Interface Formation -
AuthorAntonio T. Lucero, YoungChul Byun (U. Texas, Dallas, U.S.A.), Jaegil Lee, Lanxia Cheng, *Jiyoung Kim (, U.S.A.)
Pagepp. 71 - 72

S3-2 (Time: 13:30 - 13:50)
TitleInfluence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack
Author*Masayuki Kanematsu, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 73 - 74

S3-3 (Time: 13:50 - 14:10)
TitleThe Impact of Energy Barrier Height on Border Traps in III-V Gate Stacks
Author*Shinichi Yoshida, Satoshi Taniguchi, Hideki Minari (Sony, Japan), Dennis Lin, Tsvetan Ivanov (imec, Belgium), Heiji Watanabe (Osaka Univ., Japan), Masashi Nakazawa (Sony, Japan), Nadine Collaert, Aaron Thean (imec, Belgium)
Pagepp. 75 - 76

S3-4 (Time: 14:10 - 14:40)
Title(Invited Paper) Ab Initio Investigations for Interface Electronic Structures of SiC-MOS
Author*Tomoya Ono, Christopher Kirkham (Univ. of Tsukuba, Japan)
Pagepp. 77 - 78

S3-5 (Time: 14:40 - 15:00)
TitleEvaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy
Author*Yuki Nagae (Nagoya Univ., Japan), Shigehisa Shibayama (Nagoya Univ., Grad. Sch. of Eng., Japan), Masashi Kurosawa, Masaaki Araidai, Mitsuo Sakashita, Osamu Nakatsuka, Kenji Shiraishi, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 79 - 80