2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program

Remark: The presenter of each paper is marked with "*".

Technical Program: One Page (Not Separated) version

Author Index: HERE

Session Schedule

Thursday, November 7, 2013


Opening Address 13:20 - 13:30
K1 Keynote 1 13:30 - 14:30
Coffee Break 14:30 - 14:50
S1 Ge and III-V MOSFETs 14:50 - 16:20
Coffee Break 16:20 - 16:40
G Poster Shotgun 16:40 - 17:40
Break 17:40 - 17:50
P Poster Session 17:50 - 19:20

Friday, November 8, 2013


K2 Keynote 2 9:00 - 9:40
Coffee Break 9:40 - 10:00
S2 High-k/Metal Gate 10:00 - 11:50
Lunch 11:50 - 13:30
S3 Reliability & Ge MOSFETs 13:30 - 15:20
Coffee Break 15:20 - 15:40
S4 Power Device & Characterization 15:40 - 17:30
Break 17:30 - 17:45
Banquet 17:45 - 19:45

Saturday, November 9, 2013


S5 Graphene & Carbon Materials 9:00 - 10:30
Coffee Break 10:30 - 10:50
S6 Process 10:50 - 12:00
Lunch 12:00 - 13:30
S7 Memory & Variability 13:30 - 15:00
Coffee Break 15:00 - 15:20
S8 High-k & High-mobility MOSFETs 15:20 - 16:50
Closing Remarks 16:50 - 17:10

List of Papers

Remark: The presenter of each paper is marked with "*".

Thursday, November 7, 2013

Session K1 Keynote 1
Time: 13:30 - 14:30 Thursday, November 7, 2013
Chair: Masaaki Niwa (Tohoku Univ., Japan)

K1-1 (Time: 13:30 - 14:30)

Title	(Keynote Address) Materials Challenge for 10nm Technology and Beyond
Author	*Kathy Barla (Imec, Belgium)
Page	pp. 1 - 2

Session S1 Ge and III-V MOSFETs
Time: 14:50 - 16:20 Thursday, November 7, 2013
Chair: Shinichi Takagi (Univ. of Tokyo, Japan)

S1-1 (Time: 14:50 - 15:20)

Title	(Invited Paper) ALD High-k on III-V: Interfaces and Devices
Author	*Peide D. Ye (Purdue Univ., U.S.A.)
Page	pp. 3 - 4

S1-2 (Time: 15:20 - 15:40)

Title	Network Modification Comparison of GeO₂ on Ge by Intermixing with Trivalent Oxides (Sc₂O₃, Y₂O₃ and La₂O₃)
Author	*Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Wen Feng Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan)
Page	pp. 5 - 6

S1-3 (Time: 15:40 - 16:00)

Title	Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density
Author	*Shigehisa Shibayama, Kimihiko Kato, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 7 - 8

S1-4 (Time: 16:00 - 16:20)

Title	Interface Properties of Al₂O₃/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD
Author	*Teppei Yoshida, Kimihiko Kato (Nagoya Univ., Japan), Shigehisa Shibayama (Nagoya Univ., Research Fellow of Japan Society for the Promotion Science, Japan), Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 9 - 10

Session G Poster Shotgun
Time: 16:40 - 17:40 Thursday, November 7, 2013
Chair: Hiroyuki Kageshima (NTT, Japan)

Session P Poster Session
Time: 17:50 - 19:20 Thursday, November 7, 2013
Chair: Mitsuru Takenaka (Univ. of Tokyo, Japan)

P-1

Title	Halogen Plasma Treated Interfacial Layer on Crystal Phase and Electrical Characteristics of HfON Gate Dielectric in MOS Devices
Author	Chen-Chien Li, *Kuei-Shu Chang-Liao, Chung-Hao Fu, Hao-Zhi Hong, Li-Ting Chen, Mong-Chi Li, Wei-Fong Chi, Chun-Chang Lu, Zong-Hao Ye, Tien-Ko Wang (National Tsing Hua Univ., Taiwan)
Page	pp. 11 - 12

P-2

Title	Molecular Dynamics Study on the Formation of Dipole Layer at High-k/SiO₂ Interfaces
Author	*Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi (Waseda Univ., Japan), Atsushi Ogura (Meiji Univ./JST-CREST, Japan), Shinichi Satoh (Univ. of Hyogo/JST-CREST, Japan), Takanobu Watanabe (Waseda Univ., Japan)
Page	pp. 13 - 14

P-3

Title	First Principles Study of Electronic Structures of Lanthanide Oxides
Author	*Tomoyuki Hamada (Hitachi, Japan), Takahisa Ohno (NIMS, Japan), Sadamichi Maekawa (Japan Atomic Energy Agency, Japan)
Page	pp. 15 - 16

P-4

Title	Interrelationship between Leakage Current and Grain Boundaries of Polycrystalline HfO₂ Films Directly-Bonded to Si Substrate
Author	*Hisanori Momma, Yusuke Tomura, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan), Shinji Migita (AIST NRI, Japan)
Page	pp. 17 - 18

P-5

Title	Saturation Effect of V_th Shift during the Positive Bias Temperature Instability of HfSiON/SiO₂ nMOSFET and Its Impact on Device Lifetime
Author	*Cheolgyu Kim, Hyeokjin Kim, Bongkoo Kang (POSTECH, Republic of Korea)
Page	pp. 19 - 20

P-6

Title	Influence of Carbon Incorporation in W Gate Electrodes for La-silicate Gate Dielectrics
Author	*Kamale Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 21 - 22

P-7

Title	Parameterized Modeling of Metal Gate Electrode and High-κ Dielectrics for NBTI Reliability
Author	*Yasmin Abdul Wahab (Univ. of Malaya, Malaysia), Hanim Hussin (Univ. Teknologi MARA, Malaysia), Norhayati Soin (Univ. of Malaya, Malaysia)
Page	pp. 23 - 24

P-8

Title	An Effective Work-function Tuning Method of nMOSCAP with High-k/Metal Gate by TiN/TaN Double-Layer Stack Thickness
Author	*Xueli Ma, Hong Yang, Shangqing Ren, Wenwu Wang, Huaxiang Yin, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye (Chinese Academy of Sciences, China)
Page	pp. 25 - 26

P-9

Title	First-Principles Study on Effects of Interfacial Oxide in HfO₂/SiO₂/Si Interface
Author	*Yoshifumi Matsuoka, Takashi Kojima, Tomoya Ono (Osaka Univ., Japan)
Page	pp. 27 - 28

P-10

Title	Effect of Oxidation Temperature on GeO₂/Ge Interface Characteristics
Author	*Marina Yamaguchi, Yoshitaka Iwazaki, Tomo Ueno (Tokyo Univ. of Agri. and Tech., Japan)
Page	pp. 29 - 30

P-11

Title	Electrical Characteristics and Thermal Stability of HfO₂/GaSb MOS Interfaces Formed on Clean GaSb(100)-c(2×6) Surfaces
Author	*Noriyuki Miyata (AIST, Japan), Akihiro Ohtake (NIMS, Japan), Masakazu Ichikawa (Univ. of Tokyo, Japan), Tetsuji Yasuda (AIST, Japan)
Page	pp. 31 - 32

P-12

Title	Effect of GeO_x Interfacial Layer Formed by Ozone Oxidation Process on Ge MOS Devices
Author	Le Han, *Shengkai Wang (Chinese Academy of Sciences, China), Xiong Zhang (Southeast Univ., China), Hudong Chang, Wei Zhao, Bing Sun, Honggang Liu (Chinese Academy of Sciences, China), Yiping Cui (Southeast Univ., China)
Page	pp. 33 - 34

P-13

Title	Charge Pumping Current Characteristics in Advanced NAND Flash Device
Author	Chin-Rung Yan, *Jone F. Chen (National Cheng Kung Univ., Taiwan), Ya-Jui Lee, Yu-Jie Liao, Chung-Yi Lin, Chih-Yuan Chen, Yin-Chia Lin, Huei-Haurng Chen (Powerchip Technology, Taiwan)
Page	pp. 35 - 36

P-14

Title	HR-SIMS Analysis of Hydrogen Behavior in SiO₂/SiN/SiO₂ Films with Thermal Treatment
Author	*Yusuke Sakurai, Yorinobu Kunimune, Masao Inoue, Yoshiki Maruyama, Akio Nishida, Takashi Ide (Renesas Electronics, Japan)
Page	pp. 37 - 38

P-15

Title	High-Quality Gate Oxide Formed at 150 ^oC for Flexible Electronics
Author	*Yasuhiro Iijima, Kenya Adachi, Ryo Usuda, Kazuo Uchida, Shinji Nozaki (Univ. of Electro-Communications, Japan)
Page	pp. 39 - 40

P-16

Title	Comparison of Oxide Hole/Electron Trap Densities of ~1 nm-SiO₂ Films Formed on Si(100) and Si(111) Substrates
Author	*Keisuke Umeda, Yuji Amano (Tokyo City Univ., Japan), Daisuke Kobayashi (Institute of Space and Astronautical Science, Japan), Hiroshi Nohira (Tokyo City Univ., Japan), Kazuyuki Hirose (Institute of Space and Astronautical Science, Japan)
Page	pp. 41 - 42

P-17

Title	Sacrificial Dielectric Layer Process for AlGaN/GaN HFETs
Author	Jae-Gil Lee, Sang-Woo Han, Bong-Ryeol Park, *Ho-Young Cha (Hongik Univ., Republic of Korea)
Page	pp. 43 - 44

P-18

Title	Influence of Band Discontinuities at Source-Channel Contact in Tunnel FET Performance
Author	*Yan Wu, H. Hasegawa, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Kenji Ohmori (Univ. of Tsukuba, Japan), Takanobu Watanabe (Waseda Univ., Japan), Hitoshi Wakabayashi, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Yukihiro Kataoka, Kenji Natori (Tokyo Inst. of Tech., Japan), Keisaku Yamada (Univ. of Tsukuba, Japan), Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Page	pp. 45 - 46

P-19

Title	Interface Property of Liquid Source SiO₂ Passivation Using PHPS
Author	*Hiroshi Nagayoshi, Hiroaki Sakakibara (Tokyo National College of Tech., Japan)
Page	pp. 47 - 48

P-20

Title	Impact of Post-Metallization Annealing on Chemical Bonding Features in Ge-MIS Structure with HfO₂/TaGe_xO_y Stack
Author	*Kuniaki Hashimoto, Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 49 - 50

P-21

Title	Effect of Lattice Constant on Permittivity of Semi-Conductors
Author	*Sayaka Morimoto, Tomoyuki Hamada, Hideo Sekino (Toyohashi Univ. of Tech., Japan)
Page	pp. 51 - 52

P-22

Title	Relationship between Breakdow Electric-Field Strength and Recovery Rate Calculated by Molecular Orbital Calculation
Author	*Syuichiro Wakao (Waseda Univ., Japan), Hiroshi Seki (Keio Univ., Japan), Daisuke Kobayashi (Institute of Space and Astronautical Science, Japan), Tomoyuki Yamamoto (Waseda Univ., Japan), Kenji Yasuoka (Keio Univ., Japan), Kazuyuki Hirose (Institute of Space and Astronautical Science, Japan)
Page	pp. 53 - 54

P-23

Title	Si Emission to Atmosphere during Thermal Oxidation of Si Substrates
Author	*Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Page	pp. 55 - 56

P-24

Title	Positive Bias Temperature Instability Characteristics and Degradation Mechanisms of NMOSFET with High-k/Metal Gate Last Process
Author	*Shangqing Ren, Hong Yang, Bo Tang, Hao Xu, Weichun Luo, Zhaoyun Tang, Yefeng Xu, Jing Xu, Dahai Wang, Junfeng Li, Chao Zhao, Tianchun Ye, Wenwu Wang (Chinese Academy of Sciences, China)
Page	pp. 57 - 58

P-25

Title	An Approximate Trap Generation Model for High-k/Metal Gate Device under High Voltage Stress
Author	*Hao Xu, Hong Yang, Wenwu Wang, Shangqing Ren, Weichu Luo, Jiang Yan, Chao Zhao, Dapeng Chen, Tianchun Ye (Chinese Academy of Sciences, China)
Page	pp. 59 - 60

P-26

Title	Effect of Fluorine Implantation on NBTI Recovery of PMOSFETs
Author	*Sun Ho Oh, Hyuk Min Kwon, Seung Yong Sung, Sung Kyu Kwon, Jong Kwan Shin, Seon Man Hwang, Sung Yong Jang, Jun Min Lee (Chungnam National Univ., Republic of Korea), Yi Sun Chung, Da Soon Lee (MagnaChip, Republic of Korea), Ga Won Lee, Hi Deok Lee (Chungnam National Univ., Republic of Korea)
Page	pp. 61 - 62

P-27

Title	Non-Linear Bi-Directional Selector without Rare Materials for Stackable Cross-Bar Bipolar Memory Applications
Author	*M. H. Lee, J.-D. Luo (National Taiwan Normal Univ., Taiwan), J.-S. Huang, Y.-L. Chueh (National Tsing Hua Univ., Taiwan), C.-W. Chen (National Cheng Kung Univ., Taiwan), T.-Y. Wu, Y.-S. Chen, H. Y. Lee, F. Chen, M.-J. Tsai (ITRI, Taiwan)
Page	pp. 63 - 64

P-28

Title	Impact of Self-Complementary Resistance Switch Induced by Over-RESET Energy on Memory Reliability of Hafnium Oxide Based RRAM
Author	*H. Y. Lee (ITRI, Taiwan), P. S. Chen (Minghsin Univ. of Science and Tech., Taiwan), Y. S. Chen, C. H. Tsai, P. Y. Gu, T. Y. Wu, K. H. Tsai, S. Z. Rahaman, W. S. Chen, F. T. Chen, M. -J Tsai, T. K. Ku (ITRI, Taiwan)
Page	pp. 65 - 66

P-29

Title	Multi-level Resistance Switching Properties in Al/TiO_x/Cu Structure
Author	*Xing Long Shao, Ran Chen, Li Wei Zhou, Chang Jun Chen, Jian Yun Wang, Chen Ming Ma, Kai Liang Zhang, Jin Shi Zhao (Tianjin Univ. of Tech., China)
Page	pp. 67 - 68

P-30

Title	Low Power Property in Cu/TiO_x/SiO₂/Al Structure
Author	Xing Long Shao, Ran Chen, Li Wei Zhou, Chang Jun Chen, Jian Yun Wang, Chen Ming Ma, Kai Liang Zhang, *Jin Shi Zhao (Tianjin Univ. of Tech., China)
Page	pp. 69 - 70

P-31

Title	Temperature Dependence of Leakage Current in Thermally Grown Oxidation Films on 4H-SiC under High Electric Field
Author	*Mitsuru Sometani (Fuji Electric, Japan), Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama (AIST, Japan), Manabu Takei (Fuji Electric, Japan), Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura (AIST, Japan)
Page	pp. 71 - 72

P-32

Title	Comparison of the DSSC Efficiency on Synthetic N3 Dyes
Author	*Chonchanok Talodthaisong, Kittiya Wongkhan, Taweesak Sudyoadsuk, Sayant Saengsuwan, Rukkiat Jitchati (Ubon Ratchathani Univ., Thailand)
Page	pp. 73 - 74

P-33

Title	Carrier Extraction Enhancement by High-k Neodymium Doped-TiO2 Thin-Film for Solar-Cell ARC Passivation
Author	*Tsu-Ping Shen, Mei-Jhen Liou (Ming Chi Univ. of Tech., Taiwan), Jung-Ruey Tsai, Guo-Cheng Lin (Asia Univ., Taiwan), Meng-Hao Hsu (National Cheng Kung Univ., Taiwan), Pi-Chun Juan (Ming Chi Univ. of Tech., Taiwan)
Page	pp. 75 - 76

P-34

Title	Transparent Conductive TiO2/Nb Stacked Films with Adjustable Refractive Index Design for Solar-Cell Passivation Alternatives
Author	*Chun-Lin Chen (Ming Chi Univ. of Tech., Taiwan), Meng-Hao Hsu (National Cheng Kung Univ., Taiwan), Pi-Chun Juan (Ming Chi Univ. of Tech., Taiwan)
Page	pp. 77 - 78

P-35

Title	Computation Method of Electronic Structures with Electric Currents and Local Conductive Property
Author	Masato Senami, Yuji Ikeda, Yoji Ogiso, *Keitaro Tagawa, Akitomo Tachibana (Kyoto Univ., Japan)
Page	pp. 79 - 80

P-36

Title	Effect of Surface Pretreatment in Deposition of Al₂O₃ Layer by Thermal ALD for the Passivation of Crystal Si Solar Cell
Author	*Meng Li, Hong Sik Shin, Kwang Seok Jeong, Sung Kwen Oh, Horyeong Lee (Chungnam National Univ., Republic of Korea), Kyumin Han, Yongwoo Lee (DMS, Republic of Korea), Song Jae Lee, Ga Won Lee, Hi Deok Lee (Chungnam National Univ., Republic of Korea)
Page	pp. 81 - 82

Friday, November 8, 2013

Session K2 Keynote 2
Time: 9:00 - 9:40 Friday, November 8, 2013
Chair: Chioko Kaneta (Fujitsu, Japan)

K2-1 (Time: 9:00 - 9:40)

Title	(Keynote Address) Development of Core Technologies for Green Nanoelectronics
Author	*Naoki Yokoyama (AIST, Japan)
Page	pp. 83 - 84

Session S2 High-k/Metal Gate
Time: 10:00 - 11:50 Friday, November 8, 2013
Chair: Shimpei Tsujikawa (Sony, Japan)

S2-1 (Time: 10:00 - 10:30)

Title	(Invited Paper) Investigation of Impact of Random Telegraph Noise (RTN) in Time Domain by Robust Analysis Based on Hidden Markov Model
Author	*Hiroshi Miki (Hitachi, Japan), David J. Frank (IBM, U.S.A.)
Page	pp. 85 - 86

S2-2 (Time: 10:30 - 10:50)

Title	Investigation of Trap Properties of Hf_0.83Zr_0.17O₂ High-k Gate Stack pMOSFETs by Low-Frequency (1/f) Noise and RTN Analyses
Author	Shih-Chang Tsai (National Cheng Kung Univ., Taiwan), San-Lein Wu (Cheng Shiu Univ., Taiwan), *Po-Chin Huang, Bo-Chin Wang (National Cheng Kung Univ., Taiwan), Kai-Shiang Tsai (Cheng Shiu Univ., Taiwan), Tsung-Hsien Kao (National Cheng Kung Univ., Taiwan), Chih-Wei Yang, Cheng-Guo Chen, Kun-Yuan Lo, Osbert Cheng (United Microelectronics, Taiwan), Yean-Kuen Fang, Shoou-Jinn Chang, Jone-Fang Chen (National Cheng Kung Univ., Taiwan)
Page	pp. 87 - 88

S2-3 (Time: 10:50 - 11:10)

Title	Impact of Charges and Dipoles on Mobility and V_TH Variability in Poly-Si/High-k/SiON/Silicon on Thin BOX (SOTB) Transistor
Author	*Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (Low-power Electronics Association & Project, Japan), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo, Japan)
Page	pp. 89 - 90

S2-4 (Time: 11:10 - 11:30)

Title	Critical Role of Si Substrate in Interfacial SiO₂ Scavenging from HfO₂/SiO₂/Si Stacks
Author	*Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 91 - 92

S2-5 (Time: 11:30 - 11:50)

Title	Kinetic Understanding of Structural Phase Transformation in Ar-Sputtered HfO₂
Author	*Takamasa Iwai, Takeaki Yajima, Tomoki Nishimura, Kousuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 93 - 94

Session S3 Reliability & Ge MOSFETs
Time: 13:30 - 15:20 Friday, November 8, 2013
Chair: Yoshihiro Sugita (Fujitsu, Japan)

S3-1 (Time: 13:30 - 14:00)

Title	(Invited Paper) Recent Advances in Understanding Oxide Traps in pMOS Transistors
Author	*Tibor Grasser (TU Wien, Austria), Karina Rott, Hans Reisinger (Infineon, Germany), Michael Waltl, Franz Schanovsky, Wolfgang Goes (TU Wien, Austria), Ben Kaczer (IMEC, Belgium)
Page	pp. 95 - 96

S3-2 (Time: 14:00 - 14:20)

Title	State Transition Mechanism of Defect Causing Random-Telegraph-Noise (RTN) Fluctuation in SILC of SiO₂ Films
Author	*Takeshi Ishida, Naoki Tega, Yuki Mori, Hiroshi Miki, Toshiyuki Mine, Hitoshi Kume, Kazuyoshi Torii, Ren-ichi Yamada (Hitachi, Japan), Kenji Shiraishi (Univ. of Tsukuba/Nagoya Univ., Japan)
Page	pp. 97 - 98

S3-3 (Time: 14:20 - 14:40)

Title	Robustness of Sn Precipitation During Thermal Process of Ge_1–xSn_x
Author	*Kimihiko Kato, Takanori Asano, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 99 - 100

S3-4 (Time: 14:40 - 15:00)

Title	Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge
Author	*Yuya Minoura, Takuji Hosoi (Osaka Univ., Japan), Jin Matsugaki, Shin-Ichiro Kuroki (Hiroshima Univ., Japan), Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 101 - 102

S3-5 (Time: 15:00 - 15:20)

Title	Raman Spectroscopy Study of Phosphorus Implanted Germanium
Author	*Toshimitsu Nakamura, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 103 - 104

Session S4 Power Device & Characterization
Time: 15:40 - 17:30 Friday, November 8, 2013
Chair: Renichi Yamada (Hitachi, Japan)

S4-1 (Time: 15:40 - 16:10)

Title	(Invited Paper) Evaluation of Traps in the 4H-SiC/SiO₂ Interface
Author	*Tetsuo Hatakeyama, Mitsuru Sometani, Kenji Fukuda, Hajime Okumura (AIST, Japan), Tsunenobu Kimoto (Kyoto Univ., Japan)
Page	pp. 105 - 106

S4-2 (Time: 16:10 - 16:30)

Title	Understanding of Growth Kinetics and Microscopic Structures of Nanometer-Thick Thermal Oxides on 4H-SiC
Author	Richard Heihachiro Kikuchi, Hirohisa Hirai (Univ. of Tokyo, Japan), *Koji Kita (Univ. of Tokyo/JST-PRESTO, Japan)
Page	pp. 107 - 108

S4-3 (Time: 16:30 - 16:50)

Title	Carpet-Bombing-Like Concaves on SiC MOS Capacitors Formed by Dielectric Breakdown
Author	*Soshi Sato (Tohoku Univ., Japan), Yuki Hiroi, Kikuo Yamabe (Univ. of Tsukuba, Japan), Makoto Kitabatake (R&D Partnership for Future Power Electronics Technology, Japan), Tetsuo Endoh, Masaaki Niwa (Tohoku Univ., Japan)
Page	pp. 109 - 110

S4-4 (Time: 16:50 - 17:10)

Title	Detection of Oxidation-Induced Compressive Stress in Si(100) Substrate Near the SiO₂/Si Interface by X-Ray Photoelectron Spectroscopy
Author	*Hiroshi Nohira (Tokyo City Univ., Japan), T. Suwa (Tohoku Univ., Japan), K. Nagata (Meiji Univ., Japan), K. Nakajima (Kyoto Univ., Japan), A. Teramoto (Tohoku Univ., Japan), A. Ogura (Meiji Univ., Japan), K. Kimura (Kyoto Univ., Japan), T. Muro, T. Kinoshita (Japan Synchrotron Radiation Research Institute (JASRI), Japan), S. Sugawa, T. Hattori, T. Ohmi (Tohoku Univ., Japan)
Page	pp. 111 - 112

S4-5 (Time: 17:10 - 17:30)

Title	Characterization of Ultra-Thin Dielectric Using Time Domain Reflectometry
Author	*Yonghun Kim (Gwangju Inst. of Science and Tech., Republic of Korea), Seung-heon Baek, Changhoon Jeon (Korea Advanced Institue of Science and Technology (KAIST), Republic of Korea), Young Gon Lee, JinJu Kim, Ukjin Jung (Gwangju Inst. of Science and Tech., Republic of Korea), Seok Hee Lee (Korea Advanced Institue of Science and Technology (KAIST), Republic of Korea), Byoung Hun Lee (Gwangju Inst. of Science and Tech., Republic of Korea)
Page	pp. 113 - 114

Saturday, November 9, 2013

Session S5 Graphene & Carbon Materials
Time: 9:00 - 10:30 Saturday, November 9, 2013
Chair: Eisuke Tokumitsu (JAIST, Japan)

S5-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) Semiconducting Property in Atomically Thin Films for Future Nano-Electronics
Author	*Kazuhito Tsukagoshi (NIMS, Japan)
Page	pp. 115 - 116

S5-2 (Time: 9:30 - 9:50)

Title	Interfacial Defects at Top Gate Graphene FETs Investigated Using a Novel Discharging Current Measurement Method
Author	*Ukjin Jung, Jaeeun Lee, Young Gon Lee, Jin Ju Kim, Younghun Kim, Byoung Hun Lee (Gwangju Inst. of Science and Tech., Republic of Korea)
Page	pp. 117 - 118

S5-3 (Time: 9:50 - 10:10)

Title	Highly Sensitive Al₂O₃ Passivated CVD Graphene Photodetectors for UV to IR Region
Author	*Chang Goo Kang, Sun-Hee Choe, Sang Kyung Lee, Ukjin Jung, Woojin Park, Young Gon Lee, Tae Jin Yoo, Byoung Hun Lee (Gwangju Inst. of Science and Tech., Republic of Korea)
Page	pp. 119 - 120

S5-4 (Time: 10:10 - 10:30)

Title	Tuning of the Dielectric Constant of Diamond-Like Carbon Films Synthesized by Photoemission-Assisted Plasma-Enhanced CVD
Author	*Hiroyuki Hayashi, Susumu Takabayashi, Meng Yang, Radek Jesko, Shuichi Ogawa, Taiichi Otsuji, Yuji Takakuwa (Tohoku Univ., Japan)
Page	pp. 121 - 122

Session S6 Process
Time: 10:50 - 12:00 Saturday, November 9, 2013
Chair: Toshihide Nabatame (NIMS, Japan)

S6-1 (Time: 10:50 - 11:20)

Title	(Invited Paper) Scaling and Reliability for Advanced Gate Stack Dielectrics
Author	*Steven Hung (AMAT, U.S.A.)
Page	p. 123

S6-2 (Time: 11:20 - 11:40)

Title	Impact of Metal Gate Process on Electrical Properties of High-k First/Metal Gate Last HfO₂ nMOSFETs with TiN Cap Layer
Author	*Po Chin Huang, Shih Chang Tsai (National Cheng Kung Univ., Taiwan), San Lein Wu (Cheng Shiu Univ., Taiwan), Steve Y. W. Chen, Tong Jyun Huang, Chien Ming Lai, Osbert Cheng (United Microelectronics, Taiwan), Shoou Jinn Chang, Jone Fang Chen (National Cheng Kung Univ., Taiwan)
Page	pp. 125 - 126

S6-3 (Time: 11:40 - 12:00)

Title	Study on As⁺ Ion Implantation into Ge at Different Substrate Temperatures
Author	*Takahiro Ono, Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 127 - 128

Session S7 Memory & Variability
Time: 13:30 - 15:00 Saturday, November 9, 2013
Chair: Masao Inoue (Renesas Electronics, Japan)

S7-1 (Time: 13:30 - 14:00)

Title	(Invited Paper) Non-Volatile Data Storage in HfO₂-Based Ferroelectric FETs
Author	*Uwe Schroeder, E. Yurchuk (NaMLab GmbH, Germany), J. Mueller (Fraunhofer IPMS-CNT, Germany), S. Slesazeck, D. Martin (NaMLab GmbH, Germany), T. Schloesser, R. Boschke, R. v. Bentum (GLOBALFOUNDRIES, Germany), T. Mikolajick (TU Dresden, Germany)
Page	p. 129

S7-2 (Time: 14:00 - 14:20)

Title	Bidirectional Unipolar Switching of Al/AlO_x/ITO Flexible ReRAM
Author	*Fang Yuan (Tsinghua Univ., China), Jer-Chyi Wang (Chang Gung Univ., Taiwan), Zhigang Zhang (Tsinghua Univ., China), Yu-Ren Ye (Chang Gung Univ., Taiwan), Liyang Pan, Jun Xu (Tsinghua Univ., China), Chao-Sung Lai (Chang Gung Univ., Taiwan)
Page	pp. 131 - 132

S7-3 (Time: 14:20 - 14:40)

Title	An Atomistic Study on H and N Incorporation Effects for Oxygen Vacancies in SiO₂ Layer of MONOS Type Memories by First Principles Calculations
Author	*Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba, Japan), Katsumasa Kamiya (Univ. of Tsukuba/Kanagawa Inst. of Tech., Japan), Kenji Shiraishi (Univ. of Tsukuba/Nagoya Univ., Japan)
Page	pp. 133 - 134

S7-4 (Time: 14:40 - 15:00)

Title	Vth Shifts and Their Variability Behaviors of PFETs by ON-State and OFF-State Stress
Author	*Nurul Ezaila Alias, Anil Kumar, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo, Japan)
Page	pp. 135 - 136

Session S8 High-k & High-mobility MOSFETs
Time: 15:20 - 16:50 Saturday, November 9, 2013
Chair: Noriyuki Taoka (Nagoya Univ., Japan)

S8-1 (Time: 15:20 - 15:50)

Title	(Invited Paper) In-Situ Studies of High-k/High Mobility Interfaces
Author	*Robert Wallace (Univ. of Texas, Dallas, U.S.A.)
Page	pp. 137 - 138

S8-2 (Time: 15:50 - 16:10)

Title	Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay
Author	*Takuji Hosoi, Yuichiro Suzuki, Hiroaki Nishikawa, Masahiro Matsue, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Page	pp. 139 - 140

S8-3 (Time: 16:10 - 16:30)

Title	Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale MOSFETs
Author	*Genki Fujita, Taro Shiokawa (Univ. of Tsukuba, Japan), Yukihiro Takada (Tokyo Univ. of Science, Japan), Satoru Konabe (Univ. of Tsukuba/CREST, JST, Japan), Masakazu Muraguchi (Tohoku Univ./CREST, JST, Japan), Takahiro Yamamoto (Tokyo Univ. of Science, Japan), Tetsuo Endoh (Tohoku Univ./CREST, JST, Japan), Yasuhiro Hatsugai (Univ. of Tsukuba/Tohoku Univ., Japan), Kenji Shiraishi (Univ. of Tsukuba/Nagoya Univ., Japan)
Page	pp. 141 - 142

S8-4 (Time: 16:30 - 16:50)

Title	Impact of HfO₂ Buffer Layers on SrHfO₃ Perovskite Metal-Oxide-Semiconductor Capacitors on Si Substrates
Author	*Shinji Migita, Yukinori Morita, Meishoku Masahara, Hiroyuki Ota (AIST, GNC, Japan)
Page	pp. 143 - 144

2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY Technical Program

Session Schedule

List of Papers

2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
Technical Program