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2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S8  High-k & High-mobility MOSFETs
Time: 15:20 - 16:50 Saturday, November 9, 2013
Chair: Noriyuki Taoka (Nagoya Univ., Japan)

S8-1 (Time: 15:20 - 15:50)
Title(Invited Paper) In-Situ Studies of High-k/High Mobility Interfaces
Author*Robert Wallace (Univ. of Texas, Dallas, U.S.A.)
Pagepp. 137 - 138

S8-2 (Time: 15:50 - 16:10)
TitleEffective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay
Author*Takuji Hosoi, Yuichiro Suzuki, Hiroaki Nishikawa, Masahiro Matsue, Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 139 - 140

S8-3 (Time: 16:10 - 16:30)
TitleEffect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale MOSFETs
Author*Genki Fujita, Taro Shiokawa (Univ. of Tsukuba, Japan), Yukihiro Takada (Tokyo Univ. of Science, Japan), Satoru Konabe (Univ. of Tsukuba/CREST, JST, Japan), Masakazu Muraguchi (Tohoku Univ./CREST, JST, Japan), Takahiro Yamamoto (Tokyo Univ. of Science, Japan), Tetsuo Endoh (Tohoku Univ./CREST, JST, Japan), Yasuhiro Hatsugai (Univ. of Tsukuba/Tohoku Univ., Japan), Kenji Shiraishi (Univ. of Tsukuba/Nagoya Univ., Japan)
Pagepp. 141 - 142

S8-4 (Time: 16:30 - 16:50)
TitleImpact of HfO2 Buffer Layers on SrHfO3 Perovskite Metal-Oxide-Semiconductor Capacitors on Si Substrates
Author*Shinji Migita, Yukinori Morita, Meishoku Masahara, Hiroyuki Ota (AIST, GNC, Japan)
Pagepp. 143 - 144