Title | (Invited Paper) Non-Volatile Data Storage in HfO2-Based Ferroelectric FETs |
Author | *Uwe Schroeder, E. Yurchuk (NaMLab GmbH, Germany), J. Mueller (Fraunhofer IPMS-CNT, Germany), S. Slesazeck, D. Martin (NaMLab GmbH, Germany), T. Schloesser, R. Boschke, R. v. Bentum (GLOBALFOUNDRIES, Germany), T. Mikolajick (TU Dresden, Germany) |
Page | p. 129 |
Title | Bidirectional Unipolar Switching of Al/AlOx/ITO Flexible ReRAM |
Author | *Fang Yuan (Tsinghua Univ., China), Jer-Chyi Wang (Chang Gung Univ., Taiwan), Zhigang Zhang (Tsinghua Univ., China), Yu-Ren Ye (Chang Gung Univ., Taiwan), Liyang Pan, Jun Xu (Tsinghua Univ., China), Chao-Sung Lai (Chang Gung Univ., Taiwan) |
Page | pp. 131 - 132 |
Title | An Atomistic Study on H and N Incorporation Effects for Oxygen Vacancies in SiO2 Layer of MONOS Type Memories by First Principles Calculations |
Author | *Hiroki Shirakawa, Keita Yamaguchi (Univ. of Tsukuba, Japan), Katsumasa Kamiya (Univ. of Tsukuba/Kanagawa Inst. of Tech., Japan), Kenji Shiraishi (Univ. of Tsukuba/Nagoya Univ., Japan) |
Page | pp. 133 - 134 |
Title | Vth Shifts and Their Variability Behaviors of PFETs by ON-State and OFF-State Stress |
Author | *Nurul Ezaila Alias, Anil Kumar, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo, Japan) |
Page | pp. 135 - 136 |