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2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S6  Process
Time: 10:50 - 12:00 Saturday, November 9, 2013
Chair: Toshihide Nabatame (NIMS, Japan)

S6-1 (Time: 10:50 - 11:20)
Title(Invited Paper) Scaling and Reliability for Advanced Gate Stack Dielectrics
Author*Steven Hung (AMAT, U.S.A.)
Pagep. 123

S6-2 (Time: 11:20 - 11:40)
TitleImpact of Metal Gate Process on Electrical Properties of High-k First/Metal Gate Last HfO2 nMOSFETs with TiN Cap Layer
Author*Po Chin Huang, Shih Chang Tsai (National Cheng Kung Univ., Taiwan), San Lein Wu (Cheng Shiu Univ., Taiwan), Steve Y. W. Chen, Tong Jyun Huang, Chien Ming Lai, Osbert Cheng (United Microelectronics, Taiwan), Shoou Jinn Chang, Jone Fang Chen (National Cheng Kung Univ., Taiwan)
Pagepp. 125 - 126

S6-3 (Time: 11:40 - 12:00)
TitleStudy on As+ Ion Implantation into Ge at Different Substrate Temperatures
Author*Takahiro Ono, Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 127 - 128