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2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S4  Power Device & Characterization
Time: 15:40 - 17:30 Friday, November 8, 2013
Chair: Renichi Yamada (Hitachi, Japan)

S4-1 (Time: 15:40 - 16:10)
Title(Invited Paper) Evaluation of Traps in the 4H-SiC/SiO2 Interface
Author*Tetsuo Hatakeyama, Mitsuru Sometani, Kenji Fukuda, Hajime Okumura (AIST, Japan), Tsunenobu Kimoto (Kyoto Univ., Japan)
Pagepp. 105 - 106

S4-2 (Time: 16:10 - 16:30)
TitleUnderstanding of Growth Kinetics and Microscopic Structures of Nanometer-Thick Thermal Oxides on 4H-SiC
AuthorRichard Heihachiro Kikuchi, Hirohisa Hirai (Univ. of Tokyo, Japan), *Koji Kita (Univ. of Tokyo/JST-PRESTO, Japan)
Pagepp. 107 - 108

S4-3 (Time: 16:30 - 16:50)
TitleCarpet-Bombing-Like Concaves on SiC MOS Capacitors Formed by Dielectric Breakdown
Author*Soshi Sato (Tohoku Univ., Japan), Yuki Hiroi, Kikuo Yamabe (Univ. of Tsukuba, Japan), Makoto Kitabatake (R&D Partnership for Future Power Electronics Technology, Japan), Tetsuo Endoh, Masaaki Niwa (Tohoku Univ., Japan)
Pagepp. 109 - 110

S4-4 (Time: 16:50 - 17:10)
TitleDetection of Oxidation-Induced Compressive Stress in Si(100) Substrate Near the SiO2/Si Interface by X-Ray Photoelectron Spectroscopy
Author*Hiroshi Nohira (Tokyo City Univ., Japan), T. Suwa (Tohoku Univ., Japan), K. Nagata (Meiji Univ., Japan), K. Nakajima (Kyoto Univ., Japan), A. Teramoto (Tohoku Univ., Japan), A. Ogura (Meiji Univ., Japan), K. Kimura (Kyoto Univ., Japan), T. Muro, T. Kinoshita (Japan Synchrotron Radiation Research Institute (JASRI), Japan), S. Sugawa, T. Hattori, T. Ohmi (Tohoku Univ., Japan)
Pagepp. 111 - 112

S4-5 (Time: 17:10 - 17:30)
TitleCharacterization of Ultra-Thin Dielectric Using Time Domain Reflectometry
Author*Yonghun Kim (Gwangju Inst. of Science and Tech., Republic of Korea), Seung-heon Baek, Changhoon Jeon (Korea Advanced Institue of Science and Technology (KAIST), Republic of Korea), Young Gon Lee, JinJu Kim, Ukjin Jung (Gwangju Inst. of Science and Tech., Republic of Korea), Seok Hee Lee (Korea Advanced Institue of Science and Technology (KAIST), Republic of Korea), Byoung Hun Lee (Gwangju Inst. of Science and Tech., Republic of Korea)
Pagepp. 113 - 114