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2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S3  Reliability & Ge MOSFETs
Time: 13:30 - 15:20 Friday, November 8, 2013
Chair: Yoshihiro Sugita (Fujitsu, Japan)

S3-1 (Time: 13:30 - 14:00)
Title(Invited Paper) Recent Advances in Understanding Oxide Traps in pMOS Transistors
Author*Tibor Grasser (TU Wien, Austria), Karina Rott, Hans Reisinger (Infineon, Germany), Michael Waltl, Franz Schanovsky, Wolfgang Goes (TU Wien, Austria), Ben Kaczer (IMEC, Belgium)
Pagepp. 95 - 96

S3-2 (Time: 14:00 - 14:20)
TitleState Transition Mechanism of Defect Causing Random-Telegraph-Noise (RTN) Fluctuation in SILC of SiO2 Films
Author*Takeshi Ishida, Naoki Tega, Yuki Mori, Hiroshi Miki, Toshiyuki Mine, Hitoshi Kume, Kazuyoshi Torii, Ren-ichi Yamada (Hitachi, Japan), Kenji Shiraishi (Univ. of Tsukuba/Nagoya Univ., Japan)
Pagepp. 97 - 98

S3-3 (Time: 14:20 - 14:40)
TitleRobustness of Sn Precipitation During Thermal Process of Ge1–xSnx
Author*Kimihiko Kato, Takanori Asano, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 99 - 100

S3-4 (Time: 14:40 - 15:00)
TitlePhosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge
Author*Yuya Minoura, Takuji Hosoi (Osaka Univ., Japan), Jin Matsugaki, Shin-Ichiro Kuroki (Hiroshima Univ., Japan), Takayoshi Shimura, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 101 - 102

S3-5 (Time: 15:00 - 15:20)
TitleRaman Spectroscopy Study of Phosphorus Implanted Germanium
Author*Toshimitsu Nakamura, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 103 - 104