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2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S2  High-k/Metal Gate
Time: 10:00 - 11:50 Friday, November 8, 2013
Chair: Shimpei Tsujikawa (Sony, Japan)

S2-1 (Time: 10:00 - 10:30)
Title(Invited Paper) Investigation of Impact of Random Telegraph Noise (RTN) in Time Domain by Robust Analysis Based on Hidden Markov Model
Author*Hiroshi Miki (Hitachi, Japan), David J. Frank (IBM, U.S.A.)
Pagepp. 85 - 86

S2-2 (Time: 10:30 - 10:50)
TitleInvestigation of Trap Properties of Hf0.83Zr0.17O2 High-k Gate Stack pMOSFETs by Low-Frequency (1/f) Noise and RTN Analyses
AuthorShih-Chang Tsai (National Cheng Kung Univ., Taiwan), San-Lein Wu (Cheng Shiu Univ., Taiwan), *Po-Chin Huang, Bo-Chin Wang (National Cheng Kung Univ., Taiwan), Kai-Shiang Tsai (Cheng Shiu Univ., Taiwan), Tsung-Hsien Kao (National Cheng Kung Univ., Taiwan), Chih-Wei Yang, Cheng-Guo Chen, Kun-Yuan Lo, Osbert Cheng (United Microelectronics, Taiwan), Yean-Kuen Fang, Shoou-Jinn Chang, Jone-Fang Chen (National Cheng Kung Univ., Taiwan)
Pagepp. 87 - 88

S2-3 (Time: 10:50 - 11:10)
TitleImpact of Charges and Dipoles on Mobility and VTH Variability in Poly-Si/High-k/SiON/Silicon on Thin BOX (SOTB) Transistor
Author*Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (Low-power Electronics Association & Project, Japan), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo, Japan)
Pagepp. 89 - 90

S2-4 (Time: 11:10 - 11:30)
TitleCritical Role of Si Substrate in Interfacial SiO2 Scavenging from HfO2/SiO2/Si Stacks
Author*Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 91 - 92

S2-5 (Time: 11:30 - 11:50)
TitleKinetic Understanding of Structural Phase Transformation in Ar-Sputtered HfO2
Author*Takamasa Iwai, Takeaki Yajima, Tomoki Nishimura, Kousuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 93 - 94