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2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session S1  Ge and III-V MOSFETs
Time: 14:50 - 16:20 Thursday, November 7, 2013
Chair: Shinichi Takagi (Univ. of Tokyo, Japan)

S1-1 (Time: 14:50 - 15:20)
Title(Invited Paper) ALD High-k on III-V: Interfaces and Devices
Author*Peide D. Ye (Purdue Univ., U.S.A.)
Pagepp. 3 - 4

S1-2 (Time: 15:20 - 15:40)
TitleNetwork Modification Comparison of GeO2 on Ge by Intermixing with Trivalent Oxides (Sc2O3, Y2O3 and La2O3)
Author*Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Wen Feng Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST, Japan)
Pagepp. 5 - 6

S1-3 (Time: 15:40 - 16:00)
TitleQuantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density
Author*Shigehisa Shibayama, Kimihiko Kato, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 7 - 8

S1-4 (Time: 16:00 - 16:20)
TitleInterface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD
Author*Teppei Yoshida, Kimihiko Kato (Nagoya Univ., Japan), Shigehisa Shibayama (Nagoya Univ., Research Fellow of Japan Society for the Promotion Science, Japan), Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 9 - 10