(Back to Session Schedule)

2013 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY

Session P  Poster Session
Time: 17:50 - 19:20 Thursday, November 7, 2013
Chair: Mitsuru Takenaka (Univ. of Tokyo, Japan)

P-1
TitleHalogen Plasma Treated Interfacial Layer on Crystal Phase and Electrical Characteristics of HfON Gate Dielectric in MOS Devices
AuthorChen-Chien Li, *Kuei-Shu Chang-Liao, Chung-Hao Fu, Hao-Zhi Hong, Li-Ting Chen, Mong-Chi Li, Wei-Fong Chi, Chun-Chang Lu, Zong-Hao Ye, Tien-Ko Wang (National Tsing Hua Univ., Taiwan)
Pagepp. 11 - 12

P-2
TitleMolecular Dynamics Study on the Formation of Dipole Layer at High-k/SiO2 Interfaces
Author*Ryo Kuriyama, Masahiro Hashiguchi, Ryusuke Takahashi (Waseda Univ., Japan), Atsushi Ogura (Meiji Univ./JST-CREST, Japan), Shinichi Satoh (Univ. of Hyogo/JST-CREST, Japan), Takanobu Watanabe (Waseda Univ., Japan)
Pagepp. 13 - 14

P-3
TitleFirst Principles Study of Electronic Structures of Lanthanide Oxides
Author*Tomoyuki Hamada (Hitachi, Japan), Takahisa Ohno (NIMS, Japan), Sadamichi Maekawa (Japan Atomic Energy Agency, Japan)
Pagepp. 15 - 16

P-4
TitleInterrelationship between Leakage Current and Grain Boundaries of Polycrystalline HfO2 Films Directly-Bonded to Si Substrate
Author*Hisanori Momma, Yusuke Tomura, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan), Shinji Migita (AIST NRI, Japan)
Pagepp. 17 - 18

P-5
TitleSaturation Effect of Vth Shift during the Positive Bias Temperature Instability of HfSiON/SiO2 nMOSFET and Its Impact on Device Lifetime
Author*Cheolgyu Kim, Hyeokjin Kim, Bongkoo Kang (POSTECH, Republic of Korea)
Pagepp. 19 - 20

P-6
TitleInfluence of Carbon Incorporation in W Gate Electrodes for La-silicate Gate Dielectrics
Author*Kamale Tuokedaerhan, Shuhei Hosoda, Yoshinori Nakamura, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Pagepp. 21 - 22

P-7
TitleParameterized Modeling of Metal Gate Electrode and High-κ Dielectrics for NBTI Reliability
Author*Yasmin Abdul Wahab (Univ. of Malaya, Malaysia), Hanim Hussin (Univ. Teknologi MARA, Malaysia), Norhayati Soin (Univ. of Malaya, Malaysia)
Pagepp. 23 - 24

P-8
TitleAn Effective Work-function Tuning Method of nMOSCAP with High-k/Metal Gate by TiN/TaN Double-Layer Stack Thickness
Author*Xueli Ma, Hong Yang, Shangqing Ren, Wenwu Wang, Huaxiang Yin, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye (Chinese Academy of Sciences, China)
Pagepp. 25 - 26

P-9
TitleFirst-Principles Study on Effects of Interfacial Oxide in HfO2/SiO2/Si Interface
Author*Yoshifumi Matsuoka, Takashi Kojima, Tomoya Ono (Osaka Univ., Japan)
Pagepp. 27 - 28

P-10
TitleEffect of Oxidation Temperature on GeO2/Ge Interface Characteristics
Author*Marina Yamaguchi, Yoshitaka Iwazaki, Tomo Ueno (Tokyo Univ. of Agri. and Tech., Japan)
Pagepp. 29 - 30

P-11
TitleElectrical Characteristics and Thermal Stability of HfO2/GaSb MOS Interfaces Formed on Clean GaSb(100)-c(2×6) Surfaces
Author*Noriyuki Miyata (AIST, Japan), Akihiro Ohtake (NIMS, Japan), Masakazu Ichikawa (Univ. of Tokyo, Japan), Tetsuji Yasuda (AIST, Japan)
Pagepp. 31 - 32

P-12
TitleEffect of GeOx Interfacial Layer Formed by Ozone Oxidation Process on Ge MOS Devices
AuthorLe Han, *Shengkai Wang (Chinese Academy of Sciences, China), Xiong Zhang (Southeast Univ., China), Hudong Chang, Wei Zhao, Bing Sun, Honggang Liu (Chinese Academy of Sciences, China), Yiping Cui (Southeast Univ., China)
Pagepp. 33 - 34

P-13
TitleCharge Pumping Current Characteristics in Advanced NAND Flash Device
AuthorChin-Rung Yan, *Jone F. Chen (National Cheng Kung Univ., Taiwan), Ya-Jui Lee, Yu-Jie Liao, Chung-Yi Lin, Chih-Yuan Chen, Yin-Chia Lin, Huei-Haurng Chen (Powerchip Technology, Taiwan)
Pagepp. 35 - 36

P-14
TitleHR-SIMS Analysis of Hydrogen Behavior in SiO2/SiN/SiO2 Films with Thermal Treatment
Author*Yusuke Sakurai, Yorinobu Kunimune, Masao Inoue, Yoshiki Maruyama, Akio Nishida, Takashi Ide (Renesas Electronics, Japan)
Pagepp. 37 - 38

P-15
TitleHigh-Quality Gate Oxide Formed at 150 oC for Flexible Electronics
Author*Yasuhiro Iijima, Kenya Adachi, Ryo Usuda, Kazuo Uchida, Shinji Nozaki (Univ. of Electro-Communications, Japan)
Pagepp. 39 - 40

P-16
TitleComparison of Oxide Hole/Electron Trap Densities of ~1 nm-SiO2 Films Formed on Si(100) and Si(111) Substrates
Author*Keisuke Umeda, Yuji Amano (Tokyo City Univ., Japan), Daisuke Kobayashi (Institute of Space and Astronautical Science, Japan), Hiroshi Nohira (Tokyo City Univ., Japan), Kazuyuki Hirose (Institute of Space and Astronautical Science, Japan)
Pagepp. 41 - 42

P-17
TitleSacrificial Dielectric Layer Process for AlGaN/GaN HFETs
AuthorJae-Gil Lee, Sang-Woo Han, Bong-Ryeol Park, *Ho-Young Cha (Hongik Univ., Republic of Korea)
Pagepp. 43 - 44

P-18
TitleInfluence of Band Discontinuities at Source-Channel Contact in Tunnel FET Performance
Author*Yan Wu, H. Hasegawa, Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Kenji Ohmori (Univ. of Tsukuba, Japan), Takanobu Watanabe (Waseda Univ., Japan), Hitoshi Wakabayashi, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Yukihiro Kataoka, Kenji Natori (Tokyo Inst. of Tech., Japan), Keisaku Yamada (Univ. of Tsukuba, Japan), Hiroshi Iwai (Tokyo Inst. of Tech., Japan)
Pagepp. 45 - 46

P-19
TitleInterface Property of Liquid Source SiO2 Passivation Using PHPS
Author*Hiroshi Nagayoshi, Hiroaki Sakakibara (Tokyo National College of Tech., Japan)
Pagepp. 47 - 48

P-20
TitleImpact of Post-Metallization Annealing on Chemical Bonding Features in Ge-MIS Structure with HfO2/TaGexOy Stack
Author*Kuniaki Hashimoto, Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Pagepp. 49 - 50

P-21
TitleEffect of Lattice Constant on Permittivity of Semi-Conductors
Author*Sayaka Morimoto, Tomoyuki Hamada, Hideo Sekino (Toyohashi Univ. of Tech., Japan)
Pagepp. 51 - 52

P-22
TitleRelationship between Breakdow Electric-Field Strength and Recovery Rate Calculated by Molecular Orbital Calculation
Author*Syuichiro Wakao (Waseda Univ., Japan), Hiroshi Seki (Keio Univ., Japan), Daisuke Kobayashi (Institute of Space and Astronautical Science, Japan), Tomoyuki Yamamoto (Waseda Univ., Japan), Kenji Yasuoka (Keio Univ., Japan), Kazuyuki Hirose (Institute of Space and Astronautical Science, Japan)
Pagepp. 53 - 54

P-23
TitleSi Emission to Atmosphere during Thermal Oxidation of Si Substrates
Author*Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Pagepp. 55 - 56

P-24
TitlePositive Bias Temperature Instability Characteristics and Degradation Mechanisms of NMOSFET with High-k/Metal Gate Last Process
Author*Shangqing Ren, Hong Yang, Bo Tang, Hao Xu, Weichun Luo, Zhaoyun Tang, Yefeng Xu, Jing Xu, Dahai Wang, Junfeng Li, Chao Zhao, Tianchun Ye, Wenwu Wang (Chinese Academy of Sciences, China)
Pagepp. 57 - 58

P-25
TitleAn Approximate Trap Generation Model for High-k/Metal Gate Device under High Voltage Stress
Author*Hao Xu, Hong Yang, Wenwu Wang, Shangqing Ren, Weichu Luo, Jiang Yan, Chao Zhao, Dapeng Chen, Tianchun Ye (Chinese Academy of Sciences, China)
Pagepp. 59 - 60

P-26
TitleEffect of Fluorine Implantation on NBTI Recovery of PMOSFETs
Author*Sun Ho Oh, Hyuk Min Kwon, Seung Yong Sung, Sung Kyu Kwon, Jong Kwan Shin, Seon Man Hwang, Sung Yong Jang, Jun Min Lee (Chungnam National Univ., Republic of Korea), Yi Sun Chung, Da Soon Lee (MagnaChip, Republic of Korea), Ga Won Lee, Hi Deok Lee (Chungnam National Univ., Republic of Korea)
Pagepp. 61 - 62

P-27
TitleNon-Linear Bi-Directional Selector without Rare Materials for Stackable Cross-Bar Bipolar Memory Applications
Author*M. H. Lee, J.-D. Luo (National Taiwan Normal Univ., Taiwan), J.-S. Huang, Y.-L. Chueh (National Tsing Hua Univ., Taiwan), C.-W. Chen (National Cheng Kung Univ., Taiwan), T.-Y. Wu, Y.-S. Chen, H. Y. Lee, F. Chen, M.-J. Tsai (ITRI, Taiwan)
Pagepp. 63 - 64

P-28
TitleImpact of Self-Complementary Resistance Switch Induced by Over-RESET Energy on Memory Reliability of Hafnium Oxide Based RRAM
Author*H. Y. Lee (ITRI, Taiwan), P. S. Chen (Minghsin Univ. of Science and Tech., Taiwan), Y. S. Chen, C. H. Tsai, P. Y. Gu, T. Y. Wu, K. H. Tsai, S. Z. Rahaman, W. S. Chen, F. T. Chen, M. -J Tsai, T. K. Ku (ITRI, Taiwan)
Pagepp. 65 - 66

P-29
TitleMulti-level Resistance Switching Properties in Al/TiOx/Cu Structure
Author*Xing Long Shao, Ran Chen, Li Wei Zhou, Chang Jun Chen, Jian Yun Wang, Chen Ming Ma, Kai Liang Zhang, Jin Shi Zhao (Tianjin Univ. of Tech., China)
Pagepp. 67 - 68

P-30
TitleLow Power Property in Cu/TiOx/SiO2/Al Structure
AuthorXing Long Shao, Ran Chen, Li Wei Zhou, Chang Jun Chen, Jian Yun Wang, Chen Ming Ma, Kai Liang Zhang, *Jin Shi Zhao (Tianjin Univ. of Tech., China)
Pagepp. 69 - 70

P-31
TitleTemperature Dependence of Leakage Current in Thermally Grown Oxidation Films on 4H-SiC under High Electric Field
Author*Mitsuru Sometani (Fuji Electric, Japan), Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama (AIST, Japan), Manabu Takei (Fuji Electric, Japan), Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura (AIST, Japan)
Pagepp. 71 - 72

P-32
TitleComparison of the DSSC Efficiency on Synthetic N3 Dyes
Author*Chonchanok Talodthaisong, Kittiya Wongkhan, Taweesak Sudyoadsuk, Sayant Saengsuwan, Rukkiat Jitchati (Ubon Ratchathani Univ., Thailand)
Pagepp. 73 - 74

P-33
TitleCarrier Extraction Enhancement by High-k Neodymium Doped-TiO2 Thin-Film for Solar-Cell ARC Passivation
Author*Tsu-Ping Shen, Mei-Jhen Liou (Ming Chi Univ. of Tech., Taiwan), Jung-Ruey Tsai, Guo-Cheng Lin (Asia Univ., Taiwan), Meng-Hao Hsu (National Cheng Kung Univ., Taiwan), Pi-Chun Juan (Ming Chi Univ. of Tech., Taiwan)
Pagepp. 75 - 76

P-34
TitleTransparent Conductive TiO2/Nb Stacked Films with Adjustable Refractive Index Design for Solar-Cell Passivation Alternatives
Author*Chun-Lin Chen (Ming Chi Univ. of Tech., Taiwan), Meng-Hao Hsu (National Cheng Kung Univ., Taiwan), Pi-Chun Juan (Ming Chi Univ. of Tech., Taiwan)
Pagepp. 77 - 78

P-35
TitleComputation Method of Electronic Structures with Electric Currents and Local Conductive Property
AuthorMasato Senami, Yuji Ikeda, Yoji Ogiso, *Keitaro Tagawa, Akitomo Tachibana (Kyoto Univ., Japan)
Pagepp. 79 - 80

P-36
TitleEffect of Surface Pretreatment in Deposition of Al2O3 Layer by Thermal ALD for the Passivation of Crystal Si Solar Cell
Author*Meng Li, Hong Sik Shin, Kwang Seok Jeong, Sung Kwen Oh, Horyeong Lee (Chungnam National Univ., Republic of Korea), Kyumin Han, Yongwoo Lee (DMS, Republic of Korea), Song Jae Lee, Ga Won Lee, Hi Deok Lee (Chungnam National Univ., Republic of Korea)
Pagepp. 81 - 82