| Title | (Invited Paper) Structural Evolution and Electrical Properties of Al-Doped ALD HfO2 Thin Films and PEALD TaCxNy Metal Gate |
| Author | Tae Joo Park, Jeong Hwan Kim, Jae Hyuck Jang, Kwang Duk Na, Sang Young Lee, Hyung Suk Jung, Miyoung Kim, *Cheol Seong Hwang (Seoul National Univ., Republic of Korea), Gee-Man Kim, Kang Jun Choi, Jae Ho Choi, Jae Hak Jeong (Quros, Republic of Korea) |
| Page | pp. 157 - 158 |
| Title | The Fabrication and Characterization of Metal-Oxide-Silicon Capacitors and Field-Effect Transistors Using LaAlO3 Gate Dielectric |
| Author | Ingram Yin-ku Chang, Sheng-wen You, Main-gwo Chen, *Joseph Ya-min Lee (Tsing-Hua Univ., Taiwan) |
| Page | pp. 159 - 160 |
| Title | Novel Work Function Control Technique for Single Metal/Single High-k Gate Stacks |
| Author | *T. Hayashi, S. Sakashita, M. Mizutani, S. Yamanari, T. Kawahara, M. Inoue, J. Yugami, K. Shiga, N. Murata, Y. Yamamoto, S. Endo, K. Sato, Y. Nishida, A. Shimizu, F. Otsuka, T. Yamashita, H. Oda, Y. Inoue (Renesas Technology Corp., Japan) |
| Page | pp. 161 - 162 |
| Title | Dual Metal Gate Integration for CMOS FinFETs Using Selective Formation of Ta/Mo Interdiffused Gates |
| Author | *Takashi Matsukawa, Kazuhiko Endo, Yuki Ishikawa, Hiromi Yamauchi, Yongxun Liu, Junichi Tsukada, Kenichi Ishii, Shin-ichi O'uchi, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara (Nanoelectronics Research Inst., AIST, Japan) |
| Page | pp. 163 - 164 |