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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY

Session S8  Resistive RAM
Time: 13:40 - 14:50 Friday, November 7, 2008
Chairs: Toyohiro Chikyo (NIMS, Japan), Cheol Seong Hwang (Seoul National Univ., Republic of Korea)

S8-1 (Time: 13:40 - 14:10)
Title(Invited Paper) Mechanisms of Resistive Switching and Memory Effects in Transition Metal Oxides
Author*Akihito Sawa (AIST, Japan)
Pagepp. 151 - 152

S8-2 (Time: 14:10 - 14:30)
TitleElectric-Field-Induced Resistance Switching at Metal/Insulator Interface toward Resistance RAM
Author*Isao Ohkubo, Takayuki Harada, Kenta Tsubouchi, Genya Sugano, Hiroshi Kumigashira, Tsuyoshi Ohnishi, Mikk Lippmaa (Univ. of Tokyo, Japan), Yuji Matsumoto (Tokyo Inst. of Tech., Japan), Hideomi Koinuma (National Inst. for Materials Science, Japan), Masaharu Oshima (Univ. of Tokyo, Japan)
Pagepp. 153 - 154

S8-3 (Time: 14:30 - 14:50)
TitleSwitchable Pt/TiOx/Pt Schottky Diodes
Author*Ni Zhong, Hisashi Shima, Hiro Akinaga (AIST/JST, Japan)
Pagepp. 155 - 156