| Title | (Invited Paper) Structure and Properties of Defects in HfO2 and at Interfaces with SiO2 |
| Author | David Munoz Ramo (Univ. College London, Great Britain), Jacob Gavartin (Accelrys Ltd, Great Britain), Peter Sushko, *Alexander Shluger (Univ. College London/Tohoku Univ., Great Britain) |
| Page | pp. 141 - 142 |
| Title | Relationship between the Dipole Moment Induced in Photoemission Process and the Optical Dielectric Constant |
| Author | *Kazuyuki Hirose, Daisuke Kobayashi (JAXA, Japan), Haruhiko Suzuki, Satoshi Igarashi, Hiroshi Nohira (Musashi Inst. of Tech., Japan) |
| Page | pp. 143 - 144 |
| Title | Application of Franz Dispersion Relation in Simulations of Tunneling Transport in MIS and SONOS/TANOS Structures |
| Author | *Mikhail I. Vexler, Angelika Kuligk, Bernd Meinerzhagen (TU Braunschweig, Institut fuer Elektronische Bauelemente und Schaltungstechnik, Germany) |
| Page | pp. 145 - 146 |
| Title | Reaction Mechanisms of H2O Molecules at SiO2/Si Interfaces during Silicon Thermal Oxidation |
| Author | *Toru Akiyama (Mie Univ., Japan), Hiroyuki Kageshima (NTT, Japan), Masashi Uematsu (Keio Univ., Japan), Tomonori Ito (Mie Univ., Japan) |
| Page | pp. 147 - 148 |
| Title | Thermodynamics and Kinetics of Thermal Oxidation of Ge in High Pressure Oxygen |
| Author | *Kosuke Nagashio, Koji Kita, C. H. Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 149 - 150 |