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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY

Session S6  Reliability
Time: 9:00 - 10:10 Friday, November 7, 2008
Chairs: Shimpei Tsujikawa (Sony, Japan), Mariko Takayanagi (Toshiba America Electronic Components, United States)

S6-1 (Time: 9:00 - 9:30)
Title(Invited Paper) TDDB Reliability of High-k Stacked Gate Dielectrics
Author*Kenji Okada (MIRAI-ASET, Japan), Tsuyoshi Horikawa (MIRAI-ASRC, AIST, Japan), Hideki Satake, Masashi Takahashi (MIRAI-ASET, Japan), Seiji Inumiya, Yasushi Akasaka, Fumio Ootsuka, Yasuo Nara (Selete, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (MIRAI-ASRC, AIST/Univ. of Tokyo, Japan)
Pagepp. 135 - 136

S6-2 (Time: 9:30 - 9:50)
TitleSystematic Study on Bias Temperature Instability of Various Hf-Based Oxides ; HfO2, (Hf,Al)Oy and (Hf,Zr)Oz
Author*Hyung-Suk Jung, Tae Joo Park, Jeong Hwan Kim, Sang Young Lee, Kwang Duck Na (Seoul National Univ., Republic of Korea), Jung-Min Park, Weon-Hong Kim, Min-Woo Song, Nae-In Lee (Samsung Electronics Co., Ltd., Republic of Korea), Cheol Seong Hwang (Seoul National Univ., Republic of Korea)
Pagepp. 137 - 138

S6-3 (Time: 9:50 - 10:10)
TitleImpact of Mg Incorporation into the HfSiON Gate Dielectrics on the Performance, PBTI and TDDB
Author*Motoyuki Sato, Toshihide Nabatame, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete, Japan)
Pagepp. 139 - 140