| Title | (Invited Paper) Integration of High-k Gate Dielectrics on High Mobility Channel Materials |
| Author | *Sungjoo Lee, J. Q. Lin, H. J. Oh (National Univ. of Singapore, Singapore), G. Q. Lo, D. L. Kwong (Institute of Microelectronics, Singapore), D. Z. Chi (Institute of Materials Research and Engineering, Singapore) |
| Page | pp. 77 - 78 |
| Title | Improved MIS Characteristics of HfO2/GaAs Interfaces with Ultrathin Epitaxial Ge Interface Layers |
| Author | Tetsuji Yasuda, *Noriyuki Miyata (AIST, Japan), Akihiro Ohtake (National Inst. for Materials Science, Japan) |
| Page | pp. 79 - 80 |
| Title | Study of Electron Mobility of Ge n-MOSFETs with High Pressure Oxidized GeO2 |
| Author | *Tomonori Nishimura, Choong Hyun Lee, Koji Kita, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan) |
| Page | pp. 81 - 82 |
| Title | A Study on Electronic Structure of Silicon Nanowires with Diverse Diameters and Orientations for High Performance FET |
| Author | *Yeonghun Lee (Tokyo Inst. of Tech., Japan), Takahiro Nagata (Univ. of Tsukuba, Japan), Kuniyuki Kakushima (Tokyo Inst. of Tech., Japan), Kenji Shiraishi (Univ. of Tsukuba, Japan), Hiroshi Iwai (Tokyo Inst. of Tech., Japan) |
| Page | pp. 83 - 84 |
| Title | Evaluation of Transconductance Enhancement of <110> and <100> -Channel Strained Si Nanowire Field-Effect Transistors |
| Author | *Aya Seike, Ikushin Tsuchida (Waseda Univ., Japan), Daisuke Kosemura, Atsushi Ogura (Meiji Univ., Japan), Takanobu Watanabe, Iwao Ohdomari (Waseda Univ., Japan) |
| Page | pp. 85 - 86 |