| Title | (Invited Paper) High-k/Metal Gate CMOS Technology for 32 nm Generation and Beyond |
| Author | *Mariko Takayanagi (Toshiba America Electronic Components, Inc., United States) |
| Page | pp. 69 - 70 |
| Title | Impacts of Composition in Ternary La-Al-O Films on Vfb for Application to Dual-High-k Gate Dielectric Technology |
| Author | *Masamichi Suzuki, Masato Koyama, Atsuhiro Kinoshita (Toshiba Corp., Japan) |
| Page | pp. 71 - 72 |
| Title | Electrical Characterization of La2O3-Gated MOSFET with Mg Incorporation |
| Author | *Tomotsune Koyanagi, Kiichi Tachi, Kouichi Okamoto, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech., Japan) |
| Page | pp. 73 - 74 |
| Title | XPS Study of TiAlN/HfSiON Gate Stack - Impact of Al Redistribution on Effective Work Function Change - |
| Author | *Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ., Japan), Masaru Kadoshima, Yasuo Nara (Selete, Japan) |
| Page | pp. 75 - 76 |