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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY

Session S2  High-k Memory
Time: 15:10 - 16:20 Wednesday, November 5, 2008
Chairs: Kiyoteru Kobayashi (Tokai Univ., Japan), Alexander Shluger (Univ. College London, Great Britain)

S2-1 (Time: 15:10 - 15:40)
Title(Invited Paper) High-k Gate Dielectric and Metal Gate Technology for Sub-40nm DRAM
Author*Sangjin Hyun, Hag-Ju Cho, Sug-Hun Hong, Hye-Lan Lee, Hyung-Seok Hong, Hoon-Joo Na, Hong-Bae Park, Yu-Gyun Shin, Sung-Tae Kim, Joo-Tae Moon, Won-Seong Lee (Samsung Electronics Co., Ltd., Republic of Korea)
Pagepp. 13 - 14

S2-2 (Time: 15:40 - 16:00)
TitleMemory Characteristics of Atomic Layer Deposited High-k HfAlO Nanocrystal Capacitors with IrOx Metal Gate
Author*Atanu Das, Writam Banerjee, Ziaur Rahaman Seikh, Siddheswar Maikap, Liann. Be Chang (Chang Gung Univ., Taiwan)
Pagepp. 15 - 16

S2-3 (Time: 16:00 - 16:20)
TitleHafnium Germanium Oxide as Trapping Layer for Nonvolatile Memory Application
AuthorChao-Sung Lai, Chih-Hsin Chang, *Patrick Chou (Chang Gung Univ., Taiwan)
Pagepp. 17 - 18