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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY

Session P2  Poster Presentation -2
Time: 16:50 - 18:50 Thursday, November 6, 2008

P2-1 (Growth and related process of gate dielectric films)
TitleAdvantage of Using ∼100% Ozone for CVD SiO2 Grown under 200°C Using HMDS and UV Light Excited Ozone
Author*Naoto Kameda, Tetsuya Nishiguchi (Meidensha Corp./AIST, Japan), Yoshiki Morikawa, Mitsuru Kekura (Meidensha Corp., Japan), Hidehiko Nonaka, Shingo Ichimura (AIST, Japan)
Pagepp. 87 - 88

P2-2 (Growth and related process of gate dielectric films)
TitleDensification of CVD-SiO2 Films by Post UV-Light-Excited Ozone Annealing
Author*Naoto Kameda (Meidensha Corp./AIST, Japan), Shigeru Saito (Meidensha Corp., Japan), Tetsuya Nishiguchi (Meidensha Corp./AIST, Japan), Toshinori Miura, Mitsuru Kekura (Meidensha Corp., Japan), Hidehiko Nonaka, Shingo Ichimura (AIST, Japan)
Pagepp. 89 - 90

P2-3 (Growth and related process of gate dielectric films)
TitleMagnetron Sputtering with a Third Electrode for Suppressing Plasma Damage during Metal Oxide Film Deposition
AuthorLu Hong, Akira Asano (Nagaoka Univ. of Tech., Japan), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech., Japan), Yuichiro Kuroki, *Kanji Yasui, Masasuke Takata, Tadashi Akahane (Nagaoka Univ. of Tech., Japan)
Pagepp. 91 - 92

P2-4 (Growth and related process of gate dielectric films)
TitleMicro Roughness of Silicon Dioxide Thermally Grown on Atomically Flat Silicon (111) Terrace
Author*Keichiro Ohsawa, Yusuke Hayashi (Univ. of Tsukuba, Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba/TIMS, Japan)
Pagepp. 93 - 94

P2-5 (High-k gate dielectrics)
TitleInfluence of Hole Trapping on Threshold Voltage Shift in HfSiOx Films
Author*Chihiro Tamura, Tomohiro Hayashi (Univ. of Tsukuba, Japan), Kenji Ohmori (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Tsukuba Research Center for Interdisciplinary Materials Science, Japan)
Pagepp. 95 - 96

P2-6 (High-k gate dielectrics)
TitleElectrical Properties and Structure of Laser Spike Annealed Hafnium Oxide High-k Dielectric
Author*Dong Hak Kim, Joon Won Park (Kyung Hee Univ., Republic of Korea), You Min Chang (R&D Center FST, Republic of Korea), Daeyoung Lim (Kyung Hee Univ., Republic of Korea), Haeyang Chung (Kyung Hee Univ./R&D Center FST, Republic of Korea)
Pagepp. 97 - 98

P2-7 (High-k gate dielectrics)
TitleSystematic study on the Effect of Laser Anneal on the Charge Trapping Behavior of Hafnium Oxide
Author*Joon Won Park, Dong Hak Kim (Kyung Hee Univ., Republic of Korea), You Min Chang (FST, Republic of Korea), Daeyoung Lim (Kyung Hee Univ., Republic of Korea), Haeyang Chung (Kyung Hee Univ., FST, Republic of Korea)
Pagepp. 99 - 100

P2-8 (High-k gate dielectrics)
TitleFabrication of Al2O3 Thin Film by RF Magnetron Sputtering method and Evaluation of Electrical Properties
Author*Yutaka Nishioka, Natsuki Fukuda, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu (ULVAC, Inc., Japan)
Pagepp. 101 - 102

P2-9 (High-k gate dielectrics)
TitleSol-Gel Deposited CeO2 Thin Film as Gate Dielectric for CMOS Technology
AuthorAnil B. Patil, *Ashok M. Mahajan (North Maharashtra Univ., Jalgaon, India)
Pagepp. 103 - 104

P2-10 (High-k gate dielectrics)
TitleEffects of ALD-Al2O3 Interface Layers on Interfacial Properties of Ge MOS Capacitors
Author*Ryosuke Kato, Shinya Kyogoku, Mitsuo Sakashita, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 105 - 106

P2-11 (Mobility enhancement technology)
TitleFabrication of GeO2 by Thermal Oxidation and Its Structure Analysis
Author*Nurbaizura Mohamed, Yoshitaka Iwazaki, Masahiko Hasumi, Tomo Ueno, Koichi Kuroiwa (Tokyo Univ. of Agri. and Tech., Japan), Yukio Fukuda (Tokyo Univ. of Science Suwa, Japan)
Pagepp. 107 - 108

P2-12 (Mobility enhancement technology)
TitleOrientation Dependence of Ge Surface Oxidation
Author*Shingo Ogawa, Junichi Tsuji, Takashi Yamamoto, Yuichi Muraji (Toray Research Center, Inc., Japan), Yuichi Haruyama, Kazuhiro Kanda, Shinji Matsui (Univ. of Hyogo, Japan)
Pagepp. 109 - 110

P2-13 (Mobility enhancement technology)
TitleStudy of Impact Ionization Efficiency in High-Performance Graded-SiGe pMOSFETs
AuthorTing-Kuo Kang, *Chia-Ming Kuo, Bo-Chin Wang, Yu-Huan Sa, Chung-Yi Wu, San-Lein Wu (Cheng Shiu Univ., Taiwan)
Pagepp. 111 - 112

P2-14 (Mobility enhancement technology)
TitleHot Carrier Reliability of Strained-Si n-MOSFET
Author*Milan Kumar Bera (Seoul National Univ., Republic of Korea), C. Mahata, S. S. Mahato, T. K. Maiti, P. Chakraborty, C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Pagepp. 113 - 114

P2-15 (Ferroelectric and high-k films for memory applications)
TitleSOMOS Memory Device Using High-k Y2O3 Charge Trapping Layer for Nonvolatile Memory Application
Author*Tung-Ming Pan, Wen-Wei Yeh, Zhi-Hong Li, Jun-Kai Peng, Meng-Han Tsai, Chia-Wei Hu, Jie-Tin Lo (Chang Gung Univ., Taiwan)
Pagepp. 115 - 116

P2-16 (Ferroelectric and high-k films for memory applications)
TitleHigh-k HfGdO Charge Trapping Layer in SONOS-type Nonvolatile Memory by In Situ RF Dual-Sputtering Method
Author*Pai-Chi Chou, Chao-Sung Lai, Woei-Cherng Wu, Li-Chi Liu (Chang Gung Univ., Taiwan), Yu-Ching Fang, Li Hsu, Hui-Chun Wang (Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division, Taiwan)
Pagepp. 117 - 118

P2-17 (Ferroelectric and high-k films for memory applications)
TitleHigh Performance TaAlOx-based MIM Capacitors for RF and Mixed Signal Applications
Author*Chandreswar Mahata (Indian Inst. of Tech., Kharagpur, India), M. K. Bera (Seoul National Univ., Republic of Korea), M. K. Hota, T. Das, P. S. Das, S. Mallik, B. Majhi, I. Chatterjee, P. K. Bose, C.K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Pagepp. 119 - 120

P2-18 (Ferroelectric and high-k films for memory applications)
TitleCharge Storage Characteristics of High-k TaYOx-based Trapping Layer for High Density Non-Volatile Flash Memory Application
Author*Partha Sarathi Das, C. Mahata (Indian Inst. of Tech., Kharagpur, India), M.K. Bera (Seoul National Univ., Republic of Korea), S. Mallik, T. Das, B. Majhi, I. Chatterjee, M. K. Hota, A. Chakraborty, P. K. Bose, C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Pagepp. 121 - 122

P2-19 (Gate dielectric wearout and reliability)
TitleThe Rate of Degradation of Thin SiO2 Films under Application of High Electric Stress
Author*Zhao Lu (Univ. of Tsukuba, Japan), Masaaki ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Device Technology Co., Ltd., Japan), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba, Japan)
Pagepp. 123 - 124

P2-20 (Gate dielectric wearout and reliability)
TitleReliability of TiO2 High-k Gate Dielectrics on n-GaAs with Ge Interfacial Passivation Layer
Author*Tanmoy Das, C. Mahata (Indian Inst. of Tech., Kharagpur, India), M.K. Bera (Seoul National Univ., Republic of Korea), P.S. Das, A. Chakraborty, I. Chatterjee, B. Majhi, S. Mallik, M. K. Hota, C. K. Maiti (Indian Inst. of Tech., Kharagpur, India)
Pagepp. 125 - 126

P2-21 (Electrical characterization of gate dielectrics)
TitleImprovement of Dielectric Properties on TEOS-SiO2 Caused by Stress Relaxation with Thermal Annealing
Author*Mitsuru Sometani, Ryu Hasunuma (Univ. of Tsukuba, Japan), Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Device Technology Co., Ltd., Japan), Kikuo Yamabe (Univ. of Tsukuba, Japan)
Pagepp. 127 - 128

P2-22 (Electrical characterization of gate dielectrics)
TitleElectrical Characterization and Dielectric Property of MIS Capacitors Using a High-k CeZrO2 Ternary Oxide as the Gate Dielectric
Author*Pi-chun Juan, Shin-chun Ju (Mingchi Univ. of Tech., Taiwan), Main-gwo Chen (National Tsing-Hua Univ., Taiwan), Cheng-Li Lin (Feng Chia Univ., Taiwan), Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan), Jong-hong Lu (Mingchi Univ. of Tech., Taiwan)
Pagepp. 129 - 130

P2-23 (Ferroelectric and high-k films for memory applications)
TitleMolecular Dynamics Simulations of Nano-Size Effects in Ferroelectric Memories
Author*Masaya Iwamoto, Takeshi Nishimatsu, Yoshiyuki Kawazoe (Tohoku Univ., Japan), Umesh V. Waghmare (JNCASR, India), David Vanderbilt (Rutgers Univ., United States)
Pagepp. 131 - 132

P2-24 (Theoretical approaches to gate dielectrics/Si structure)
TitleTheoretical Study of Local Dielectric Properties of La and Hf Oxide
Author*Akinori Fukushima, Masato Senami, Akitomo Tachibana (Kyoto Univ., Japan)
Pagepp. 133 - 134