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International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY

Session P1  Poster Presentation -1
Time: 17:30 - 18:50 Wednesday, November 5, 2008

P1-1 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)
TitleTime-Resolved Observation of Trapping-Mediated O2 Adsorption on Si(111)-7x7 by Synchrotron Radiation Photoelectron Spectroscopy
Author*Akitaka Yoshigoe, Yuden Teraoka (Japan Atomic Energy Agency, Japan)
Pagepp. 19 - 20

P1-2 (Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics)
TitleLow Energy N2 Plasma Immersion Ion Implantation (PIII) for Multiple-Oxide-Thickness
AuthorKung Ming Fan, Chen Yu Lo, *Chao Sung Lai (Chang Gung Univ., Taiwan), Shang Feng Huang, Wen Fa Tsai, Chi Fong Ai (Institution of Nuclear Energy Research, Taiwan)
Pagepp. 21 - 22

P1-3 (Growth and related process of gate dielectric films)
TitleHfOxNy Formation on 3-Dimentional Structure Utilizing ECR Sputtering
Author*Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech., Japan)
Pagepp. 23 - 24

P1-4 (High-k gate dielectrics)
TitleCharacterization of Chemical Bonding Features in HfGdxOy Film Formed by MOCVD Using DPM Precursors
Author*Daisuke Kanme, Akio ohta, Ryo Yougauchi, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ., Japan)
Pagepp. 25 - 26

P1-5 (High-k gate dielectrics)
TitleLa Concentration Dependence of Chemical State and Interface Reaction in HfxLayOz/SiO2/Si Substrate Stack
Author*Takashi Yamamoto, Hirofumi Seki, Junichi Tsuji, Shingo Ogawa, Naoyuki Sugiyama (Toray Research Center, Inc., Japan), Koji Kita (Univ. of Tokyo, Japan)
Pagepp. 27 - 28

P1-6 (High-k gate dielectrics)
TitleAnnealing-Temperature Dependence of Compositional Depth Profile and Chemical Bonding of HfLaOx /SiO2/Si Layer
Author*Kouji Kitamura (Musashi Inst. of Tech., Japan), Kiichi Tachi, Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Inst. of Tech., Japan), Hiroshi Nohira (Musashi Inst. of Tech., Japan)
Pagepp. 29 - 30

P1-7 (High-k gate dielectrics)
TitleVestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces
Author*Tomohiro Hayashi, Chihiro Tamura (Univ. of Tsukuba, Japan), Motoyuki Sato (Selete, Japan), Ryu Hasunuma, Kikuo Yamabe (Tsukuba Research Center for Interdisciplinary Materials Science, Japan)
Pagepp. 31 - 32

P1-8 (High-k gate dielectrics)
TitleStudy on HfO2/Si and HfSiO/Si Structures Fabricated by Oxidation of Metal Thin Films
Author*Yusuke Oniki, Yoshitaka Iwazaki, Masahiko Hasumi, Tomo Ueno, Koichi Kuroiwa (Tokyo Univ. of Agri. and Tech., Japan)
Pagepp. 33 - 34

P1-9 (High-k gate dielectrics)
TitlePhysical Properties and Electrical Characteristics of High-k NdOxNy Gate Dielectrics
Author*Tung-Ming Pan, Sung-Ju Hou, Li-Chen Yen, Jian-Wei Cheng, Tung-Han Wu (Chang Gung Univ., Taiwan)
Pagepp. 35 - 36

P1-10 (Metal gate electrodes)
TitleApplication of PVD-LaO with Angstrom-Scale Contorollability to Metal/Cap/High-k Gate Stacks
Author*Takaaki Kawahara, Shinsuke Sakashita, Masaharu Mizutani, Masao Inoue, Yutaka Takeshima, Shinichi Yamanari, Naofumi Murata, Masatoshi Anma, Yukio Nishida (Renesas Technology Corp., Japan), Seiji Matsuyama, Riichirou Mitsuhashi, Yoshihiro Satoh, Akihiko Tsudumitani (Matsushita Electric Industrial Co., Ltd., Japan), Jiro Yugami (Renesas Technology Corp., Japan)
Pagepp. 37 - 38

P1-11 (Metal gate electrodes)
TitleDemonstration of Gate Work Function Engineered FinFET CMOS
Author*Yongxun Liu (AIST, Japan), Tetsuro Hayashida (Meiji Univ., Japan), Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Kenichi Ishii, Yuki Ishikawa (AIST, Japan), Atsushi Ogura (Meiji Univ., Japan), Eiichi Suzuki, Meishoku Masahara (AIST, Japan)
Pagepp. 39 - 40

P1-12 (Metal gate electrodes)
TitleA Comparative Study of the Electrical Characteristics of Sputtered TiN Gate Planar MOSFETs and FinFETs
Author*Tetsuro Hayashida (Meiji Univ., Japan), Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Eiichi Suzuki (AIST, Japan), Atsushi Ogura (Meiji Univ., Japan), Meishoku Masahara (AIST, Japan)
Pagepp. 41 - 42

P1-13 (Metal gate electrodes)
TitleNitrogen Content Dependence of Resistivity and Crystalline Structures of Ti-Si-N and Hf-Si-N Gate Electrodes
Author*Kazuaki Miyamoto, Kohei Furumai, Ben E. Urban, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 43 - 44

P1-14 (Metal gate electrodes)
TitleTi1-xAlxNy Metal Gate Electrodes Deposited by AL-PVD and ALD
Author*John Macneil, Yun Zhou, Paulo Lima, Robert Trowell, Keith Buchanan (Aviza Technology, Great Britain)
Pagepp. 45 - 46

P1-15 (Ferroelectric and high-k films for memory applications)
TitleThe Fabrication and Characterization of Pt/TiOx/Pt Capacitors for Resistive Random Access Memory Applications
AuthorJordan Chun-Hsien Hsu, Ingram Yin-ku Chang, Chun-Heng Chen, *Joseph Ya-min Lee (Tsing-Hua Univ., Taiwan)
Pagepp. 47 - 48

P1-16 (Ferroelectric and high-k films for memory applications)
TitleEffect of Top Electrode on the HfOx/TiN RRAM Device
AuthorKow Ming Chang, *Wen Hsien Tzeng (National Chiao Tung Univ., Taiwan), Kow-Chen Liu (Chang Gung Univ., Taiwan), Pang Shiu Chen (MingShin Univ. of Science and Tech., Taiwan), Heng Yuan Lee, Ming Jinn Tsai (Industrial Technology Research Institute, Taiwan), Jin Ping Lin (Nayan Technology Corp., Taiwan)
Pagepp. 49 - 50

P1-17 (Dielectric reliability related to process integration)
TitleCharacterization of Fluorine-Ion Implant Effects on p-Channel LTPS TFTs with SiON Gate Dielectric
Author*Chao-Sung Lai, Tz-An Huang, Hsing-Kan Peng (Chang Gung Univ., Taiwan)
Pagepp. 51 - 52

P1-18 (Characterization and control of gate dielectric/Si interface)
TitleResidual Order in Thermal Oxide of Fully Strained SiGe Alloy on Si
Author*Takayoshi Shimura, Yuki Okamoto, Tomoyuki Inoue, Takuji Hosoi, Heiji Watanabe (Osaka Univ., Japan)
Pagepp. 53 - 54

P1-19 (Characterization and control of gate dielectric/Si interface)
TitleDetection of Silicon Atomic Displacement in HfO2/SiO2/Si(100)
Author*Kaoru Sasakawa (Kobelco Res. Inst. Inc., Japan), Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ., Japan)
Pagepp. 55 - 56

P1-20 (Theoretical approaches to gate dielectrics/Si structure)
TitleKinetic Model for High Pressure Oxidation of Silicon
Author*Takanobu Watanabe, Tomoya Onda, Tomofumi Zushi, Iwao Ohdomari (Waseda Univ., Japan)
Pagepp. 57 - 58

P1-21 (Theoretical approaches to gate dielectrics/Si structure)
TitleTheoretical Study on Nitrogen and Nitrogen Oxide Molecules in Silicon Oxide
Author*Hiroyuki Kageshima (NTT, Japan), Toru Akiyama (Mie Univ., Japan), Masashi Uematsu (Keio Univ., Japan), Tomonori Ito (Mie Univ., Japan)
Pagepp. 59 - 60