| Title | (Invited Paper) Biased Temperature Stability Testing of Metal Gates and High-k (HfSiON) Gate Dielectrics |
| Author | Ajit Shanware, J. McPherson, M.R. Visokay, J. J. Chambers, M. Ramin, C. Huffman, P. Kohli, L. Colombo (Texas Instruments, United States) |
| Page | pp. 139 - 140 |
| Title | Recovery Mechanism of Stress-induced Leakage Current by Bias Annealing in Thin Gate Oxide |
| Author | Renichi Yamada, Yasuhiro Shimamoto, Kikuo Watanabe (Hitachi, Ltd., Japan) |
| Page | pp. 141 - 142 |
| Title | Experimental Evidence of Nit-related and –unrelated Mechanisms for NBTI with Ultra-thin SiON Gate Dielectric |
| Author | Shigeto Fukatsu, Daisuke Hagishima, Yuichiro Mitani, Kazuya Matsuzawa , Koichiro Inoue (Toshiba Co., Japan) |
| Page | pp. 143 - 144 |
| Title | Generation of Electrode-Side Traps under NBT Stress in Metal/HfSiON PFETs and its Impact on Floating Body Effect of SOI Devices |
| Author | Fumio Ootsuka, Takahisa Eimori, Yasuo Nara, Yuzuru Ohji (Selete, Japan) |
| Page | pp. 145 - 146 |