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2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session S8 Memory
Time: 13:20 - 14:30 Friday, November 10, 2006
Chairs: Toyohiro Chikyo (National Institute for Materials Science, Japan), Ajit Shanware (Texas Instruments, United States)

S8-1 (Time: 13:20 - 13:50)
Title(Invited Paper) Ferroelectric Gate Insulator - not only for nonvolatile memory device -
AuthorEisuke Tokumitsu (Tokyo Inst. of Tech., Japan)
Pagepp. 133 - 134

S8-2 (Time: 13:50 - 14:10)
TitlePhysical Model of Electron and Hole Traps in Metal-Oxide-Nitride-Oxide-Semiconductor (MONOS) for Embedded Flash Memories
AuthorKenji Shiraishi (Univ. of Tsukuba, Japan), Kazuyoshi Torii (Hitachi, Ltd., Japan)
Pagepp. 135 - 136

S8-3 (Time: 14:10 - 14:30)
TitleNonvolatile Flash Memory Devices Using CeO2 Nanocrystal Trapping Layer for Two-Bits/Cell Applications
AuthorShao-Ming Yang, Chao-Hsin Chien, Jiun-Jia Huang, Yu-Hsien Lin, Tan-Fu Lei (National Chiao Tung Univ., Taiwan)
Pagepp. 137 - 138