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2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session S7 High-k Gate Dielectrics (2)
Time: 10:50 - 12:00 Friday, November 10, 2006
Chairs: Jiro Yugami (Renesas Technology Corp., Japan), Chioko Kaneta (Fujitsu Laboratories Ltd., Japan)

S7-1 (Time: 10:50 - 11:20)
Title(Invited Paper) Point defects in stacks of high-k metal oxides on semiconductors probed by electron spin resonance: the Ge vs Si case
AuthorAndre Stesmans, V. V. Afanas'ev (Univ. of Leuven, Belgium)
Pagepp. 127 - 128

S7-2 (Time: 11:20 - 11:40)
TitleDielectric Properties of Amorphous LaTaOx Films for Alternative Gate Dielectrics
AuthorYi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 129 - 130

S7-3 (Time: 11:40 - 12:00)
TitleFirst Principles Calculation of Dielectric Function of Amorphous High-k materials in the Giga to Tera Hz Frequency Region
AuthorTomoyuki Hamada (Univ. of Tokyo, Japan), Hiroyoshi Momida, Takahisa Ohno (National Institute for Materials Science, Japan)
Pagepp. 131 - 132