2006 International Workshop on Dielectric Thin Films for Future ULSI Devices Technical Program

2006 International Workshop on Dielectric Thin Films for Future ULSI Devices

Session S6 High-k Gate Dielectrics (1)
Time: 9:00 - 10:30 Friday, November 10, 2006
Chairs: Kazuyoshi Torii (Hitachi, Ltd., Japan), Andre Stesmans (Univ. of Leuven, Belgium)

S6-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) Integration of High-K Gate Dielectric into High Mobility Substrate
Author	Byung Jin Cho (National Univ. of Singapore, Singapore), Wei Yip Loh (Institute of Microelectronics, Singapore), Hui Zang, Goutam Kumar Dalapati, Yi Tong, Kyu Jin Choi (National Univ. of Singapore, Singapore)
Page	pp. 119 - 120

S6-2 (Time: 9:30 - 9:50)

Title	Controlled interlayer formation for sub-nm-EOT high-k gate stack
Author	Yukinori Morita (MIRAI-ASRC, Japan), Kunihiko Iwamoto, Arito Ogawa, Masashi Takahashi (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, Japan), Toshihide Nabatame (MIRAI-ASET, Japan), Akira Toriumi (MIRAI-ASRC, Japan)
Page	pp. 121 - 122

S6-3 (Time: 9:50 - 10:10)

Title	Experimental Determination of Tunneling Effective Mass in HfO₂
Author	Kazuyuki Tomida, Koji Kita, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 123 - 124

S6-4 (Time: 10:10 - 10:30)

Title	Effect of Residual OH Impurities in ALD High-k Films on Interfacial SiO₂ Growth
Author	Shinsuke Kimura (Shibaura Inst. of Tech., Japan), Kunihiko Iwamoto, Masaru Kadoshima (MIRAI-ASET, Japan), Yuu Nunoshige (Shibaura Inst. of Tech., Japan), Arito Ogawa, Toshihide Nabatame (MIRAI-ASET, Japan), Hiroyuki Ota (MIRAI-ASRC, AIST, Japan), Akira Toriumi (Univ. of Tokyo, Japan), Tomoji Ohishi (Shibaura Inst. of Tech., Japan)
Page	pp. 125 - 126